公开(公告)号：US06797639B2

公开(公告)日：2004-09-28

申请号：US10254969

申请日：2002-09-24

申请人： James D Carducci ,  Hamid Noorbakhsh ,  Evans Y Lee ,  Bryan Y Pu ,  Hongching Shan ,  Claes Bjorkman ,  Siamak Salimian ,  Paul E Luscher ,  Michael D Welch

发明人： James D Carducci ,  Hamid Noorbakhsh ,  Evans Y Lee ,  Bryan Y Pu ,  Hongching Shan ,  Claes Bjorkman ,  Siamak Salimian ,  Paul E Luscher ,  Michael D Welch

IPC分类号： H01L2100

CPC分类号： H01L21/6875 ,  H01J37/32522 ,  H01L21/31116 ,  H01L21/67069 ,  H01L21/6833 ,  H01L21/68757 ,  H01L21/68785 ,  H01L21/68792 ,  H01L21/76802 ,  H01L21/76807 ,  H01L21/76897 ,  H01L2924/3011

摘要： A capacitively coupled reactor for plasma etch processing of substrates at subatmospheric pressures includes a chamber body defining a processing volume, a lid provided upon the chamber body, the lid being a first electrode, a substrate support provided in the processing volume and comprising a second electrode, a radio frequency source coupled at least to one of the first and second electrodes, a process gas inlet configured to deliver process gas into the processing volume, and an evacuation pump system having pumping capacity of at least 1600 liters/minute. The greater pumping capacity controls residency time of the process gases so as to regulate the degree of dissociation into more reactive species.

公开(公告)号：US06716302B2

公开(公告)日：2004-04-06

申请号：US10253496

申请日：2002-09-24

申请人： James D Carducci ,  Hamid Noorbakhsh ,  Evans Y Lee ,  Bryan Y Pu ,  Hongching Shan ,  Claes Bjorkman ,  Siamak Salimian ,  Paul E Luscher ,  Michael D Welch

发明人： James D Carducci ,  Hamid Noorbakhsh ,  Evans Y Lee ,  Bryan Y Pu ,  Hongching Shan ,  Claes Bjorkman ,  Siamak Salimian ,  Paul E Luscher ,  Michael D Welch

IPC分类号： H05H100

CPC分类号： H01L21/6875 ,  H01J37/32522 ,  H01L21/31116 ,  H01L21/67069 ,  H01L21/6833 ,  H01L21/68757 ,  H01L21/68785 ,  H01L21/68792 ,  H01L21/76802 ,  H01L21/76807 ,  H01L21/76897 ,  H01L2924/3011

摘要： A capacitively coupled reactor for plasma etch processing of substrates at subatmospheric pressures includes a chamber body defining a processing volume, a lid provided upon the chamber body, the lid being a first electrode, a substrate support provided in the processing volume and comprising a second electrode, a radio frequency source coupled at least to one of the first and second electrodes, a process gas inlet configured to deliver process gas into the processing volume, and an evacuation pump system having pumping capacity of at least 1600 liters/minute. The greater pumping capacity controls residency time of the process gases so as to regulate the degree of dissociation into more reactive species.

摘要翻译： 一种用于在低于大气压的衬底的等离子体蚀刻处理的电容耦合反应器包括限定处理容积的室主体，设置在室主体上的盖，盖是第一电极，设置在处理容积中的衬底支撑件，并且包括第二电极 耦合到所述第一和第二电极中的至少一个电极的射频源，配置成将处理气体输送到所述处理容积中的处理气体入口，以及具有至少1600升/分钟的抽运能力的抽空泵系统。 较大的泵送能力控制工艺气体的停留时间，以便调节分解成更具反应活性的物质的程度。

公开(公告)号：US06221782B1

公开(公告)日：2001-04-24

申请号：US09287701

申请日：1999-04-06

申请人： Hongching Shan ,  Evans Y. Lee ,  Michael D. Welch ,  Robert W. Wu ,  Bryan Y. Pu ,  Paul E. Luscher ,  James D. Carducci ,  Richard Blume

发明人： Hongching Shan ,  Evans Y. Lee ,  Michael D. Welch ,  Robert W. Wu ,  Bryan Y. Pu ,  Paul E. Luscher ,  James D. Carducci ,  Richard Blume

IPC分类号： H01L213065

CPC分类号： H01J37/32834 ,  H01J37/32477 ,  H01J37/32623 ,  H01J37/32706

摘要： A method of adjusting the cathode DC bias in a plasma chamber for fabricating semiconductor devices. A dielectric shield is positioned between the plasma and a selected portion of the electrically grounded components of the chamber, such as the electrically grounded chamber wall. The cathode DC bias is adjusted by controlling one or more of the following parameters: (1) the surface area of the chamber wall or other grounded components which is blocked by the dielectric shield; (2) the thickness of the dielectric; (3) the gap between the shield and the chamber wall; and (4) the dielectric constant of the dielectric material. In an apparatus aspect, the invention is a plasma chamber for fabricating semiconductor devices having an exhaust baffle with a number of sinuous passages. Each passage is sufficiently long and sinuous that no portion of the plasma within the chamber can extend beyond the outlet of the passage. By blocking the plasma from reaching the exhaust pump, the exhaust baffle reduces the deposition of unwanted particles on exhaust pump components. The exhaust baffle also reduces the cathode DC bias by reducing the effective surface area of the electrically grounded chamber wall which couples RF power to the plasma.

公开(公告)号：US06513452B2

公开(公告)日：2003-02-04

申请号：US09841804

申请日：2001-04-24

申请人： Hongching Shan ,  Evans Y. Lee ,  Michael D. Welch ,  Robert W. Wu ,  Bryan Y. Pu ,  Paul E. Luscher ,  James D. Carducci ,  Richard Blume

发明人： Hongching Shan ,  Evans Y. Lee ,  Michael D. Welch ,  Robert W. Wu ,  Bryan Y. Pu ,  Paul E. Luscher ,  James D. Carducci ,  Richard Blume

IPC分类号： C23C1600

CPC分类号： H01J37/32834 ,  H01J37/32477 ,  H01J37/32623 ,  H01J37/32706

摘要： A method of adjusting the cathode DC bias in a plasma chamber for fabricating semiconductor devices. A dielectric shield is positioned between the plasma and a selected portion of the electrically grounded components of the chamber, such as the electrically grounded chamber wall. The cathode DC bias is adjusted by controlling one or more of the following parameters: (1) the surface area of the chamber wall or other grounded components which is blocked by the dielectric shield; (2) the thickness of the dielectric; (3) the gap between the shield and the chamber wall; and (4) the dielectric constant of the dielectric material. In an apparatus aspect, the invention is a plasma chamber for fabricating semiconductor devices having an exhaust baffle with a number of sinuous passages. Each passage is sufficiently long and sinuous that no portion of the plasma within the chamber can extend beyond the outlet of the passage. By blocking the plasma from reaching the exhaust pump, the exhaust baffle reduces the deposition of unwanted particles on exhaust pump components. The exhaust baffle also reduces the cathode DC bias by reducing the effective surface area of the electrically grounded chamber wall which couples RF power to the plasma.

摘要翻译： 一种调整用于制造半导体器件的等离子体室中的阴极直流偏压的方法。 电介质屏蔽件位于等离子体和室的电接地部件的选定部分之间，例如电接地室壁。 通过控制一个或多个以下参数来调节阴极直流偏压：（1）腔室壁的表面积或由介电屏蔽件阻挡的其它接地部件; （2）电介质的厚度; （3）屏蔽和室壁之间的间隙; 和（4）介电材料的介电常数。 在装置方面，本发明是用于制造半导体器件的等离子体室，其具有带有多个弯曲通道的排气挡板。 每个通道足够长和弯曲，使得室内的等离子体的任何部分不能延伸超过通道的出口。 通过阻止等离子体到达排气泵，排气挡板减少排气泵部件上不想要的颗粒的沉积。 排气挡板还通过减少将RF功率耦合到等离子体的电接地室壁的有效表面积来减小阴极DC偏压。

公开(公告)号：US06432259B1

公开(公告)日：2002-08-13

申请号：US09461682

申请日：1999-12-14

申请人： Hamid Noorbakhsh ,  Michael Welch ,  Siamak Salimian ,  Paul Luscher ,  Hongching Shan ,  Kaushik Vaidya ,  Jim Carducci ,  Evans Lee

发明人： Hamid Noorbakhsh ,  Michael Welch ,  Siamak Salimian ,  Paul Luscher ,  Hongching Shan ,  Kaushik Vaidya ,  Jim Carducci ,  Evans Lee

IPC分类号： H05H100

CPC分类号： H01J37/32522 ,  H01J37/321 ,  H01J37/3244

摘要： A plasma reactor embodying the invention includes a wafer support and a chamber enclosure member having an interior surface generally facing the wafer support. At least one miniature gas distribution plate for introducing a process gas into the reactor is supported on the chamber enclosure member and has an outlet surface which is a fraction of the area of the interior surface of said wafer support. A coolant system maintains the chamber enclosure member at a low temperature, and the miniature gas distribution plate is at least partially thermally insulated from the chamber enclosure member so that it is maintained at a higher temperature by plasma heating.

摘要翻译： 体现本发明的等离子体反应器包括晶片支撑件和室外壳构件，其具有大致面向晶片支撑件的内表面。 用于将工艺气体引入反应器的至少一个微型气体分配板被支撑在腔室外壳构件上，并且具有出口表面，该出口表面是所述晶片支撑件的内表面区域的一部分。 冷却剂系统将室外壳构件保持在低温，并且微型气体分配板与腔室外壳构件至少部分热绝缘，使得其通过等离子体加热保持在较高温度。

公开(公告)号：US6076482A

公开(公告)日：2000-06-20

申请号：US937347

申请日：1997-09-20

申请人： Ji Ding ,  James Carducci ,  Hongching Shan ,  Siamak Salimian ,  Evans Lee ,  Paul E. Luscher ,  Mike Welch

发明人： Ji Ding ,  James Carducci ,  Hongching Shan ,  Siamak Salimian ,  Evans Lee ,  Paul E. Luscher ,  Mike Welch

IPC分类号： H01J37/32 ,  C23C16/00 ,  C23F1/02 ,  H01L21/302

CPC分类号： H01J37/32458 ,  H01J37/321

摘要： The invention contours the chamber surface overlying semiconductor wafer being processed (i.e., the chamber ceiling) in such a way as to promote or optimize the diffusion of plasma ions from their regions of origin to other regions which would otherwise have a relative paucity of plasma ions. This is accomplished by providing a greater chamber volume over those areas of the wafer otherwise experiencing a shortage of plasma ions and a smaller chamber volume over those areas of the wafer experiencing a plentitude of plasma ions (e.g, due to localized plasma generation occurring over the latter areas). Thus, the ceiling is contoured to promote a plasma ion diffusion which best compensates for localized or non-uniform patterns in plasma ion generation typical of an inductively coupled source (e.g., an overhead inductive antenna). Specifically, the invention provides a lesser ceiling height (relative to the wafer surface) over regions in which plasma ions are generated or tend to congregate and a greater ceiling height in other regions. More specifically, in the case of an overlying inductive antenna where plasma ion density tends to fall off toward the wafer periphery, the ceiling contour is such that the ceiling height increases radially, i.e., toward the wafer periphery. This promotes or increases plasma ion diffusion toward the wafer periphery as a function of the rate at which the ceiling height increases radially.

摘要翻译： 本发明轮廓地覆盖正在被处理的半导体晶片（即，室顶）上的腔表面，以促进或优化等离子体离子从其原始区域扩散到否则将具有相对低的等离子体离子的其它区域 。 这通过在晶片的那些区域上提供更大的室体积，否则经历等离子体离子的短缺，并且在经历等离子体离子的大量的晶片的那些区域（例如，由于在 后面的区域）。 因此，天花板的轮廓是促进等离子体离子扩散，其最好地补偿电感耦合源（例如，架空感应天线）典型的等离子体离子产生中的局部或非均匀图案。 具体地说，本发明提供了在其中产生等离子体离子或倾向聚集的区域和在其它区域中具有更大的天花板高度的较小的天花板高度（相对于晶片表面）。 更具体地说，在等离子体离子密度倾向于朝向晶片周边倾斜的上覆感应天线的情况下，天花板高度使天花板高度径向增加，即朝向晶片周边。 这促进或增加等离子体离子向晶片周边的扩散，这是天花板高度径向增加的速率的函数。

公开(公告)号：US06568346B2

公开(公告)日：2003-05-27

申请号：US09929902

申请日：2001-08-14

申请人： Bryan Y. Pu ,  Hongching Shan ,  Claes Bjorkman ,  Kenny Doan ,  Mike Welch ,  Richard Raymond Mett

发明人： Bryan Y. Pu ,  Hongching Shan ,  Claes Bjorkman ,  Kenny Doan ,  Mike Welch ,  Richard Raymond Mett

IPC分类号： C23C16507

CPC分类号： H01J37/321

摘要： Apparatus and method for inductively coupling electrical power to a plasma in a semiconductor process chamber. In a first aspect, an array of wedge-shaped induction coils are distributed around a circle. The sides of adjacent coils are parallel, thereby enhancing the radial uniformity of the magnetic field produced by the array. In a second aspect, electrostatic coupling between the induction coils and the plasma is minimized by connecting each induction coil to the power supply so that the turn of wire of the coil which is nearest to the plasma is near electrical ground potential. In one embodiment, the hot end of one coil is connected to the unbalanced output of an RF power supply, and the hot end of the other coil is connected to electrical ground through a capacitor which resonates with the latter coil at the frequency of the RF power supply.

摘要翻译： 用于在半导体处理室中将电力感应耦合到等离子体的装置和方法。 在第一方面，楔形感应线圈阵列分布在一个圆周围。 相邻线圈的侧面是平行的，从而增强阵列产生的磁场的径向均匀性。 在第二方面，通过将每个感应线圈连接到电源使得感应线圈和等离子体之间的静电耦合最小化，使得最接近等离子体的线圈的线的转弯接近电接地电位。 在一个实施例中，一个线圈的热端连接到RF电源的不平衡输出端，另一个线圈的热端通过电容器连接到电接地，电容器以RF的频率与后一个线圈谐振 电源。

公开(公告)号：US06273022B1

公开(公告)日：2001-08-14

申请号：US09039216

申请日：1998-03-14

申请人： Bryan Y. Pu ,  Hongching Shan ,  Claes Bjorkman ,  Kenny Doan ,  Mike Welch ,  Richard Raymond Mett

发明人： Bryan Y. Pu ,  Hongching Shan ,  Claes Bjorkman ,  Kenny Doan ,  Mike Welch ,  Richard Raymond Mett

IPC分类号： C23C16507

CPC分类号： H01J37/321

摘要： Apparatus and method for inductively coupling electrical power to a plasma in a semiconductor process chamber. In a first aspect, an array of induction coils is distributed over a geometric surface having a circular transverse section. Each coil has a transverse section which is wedge-shaped so that the adjacent sides of any two adjacent coils in the array are approximately parallel to a radius of the circular transverse section of the geometric surface. The sides of adjacent coils being parallel enhances the radial uniformity of the magnetic field produced by the coil array. In a second aspect, electrostatic coupling between the induction coils and the plasma is minimized by connecting each induction coil to the power supply so that the turn of wire of the coil which is nearest to the plasma is near electrical ground potential. In one embodiment, the near end of each coil connects directly to electrical ground. In second and third embodiments, two coils are connected in series at the near end of each coil. In the second embodiment, the opposite (“RF hot”) end of each coil is connected to a respective balanced output of an RF power supply. In the third embodiment, the hot end of one coil is connected to the unbalanced output of an RF power supply, and the hot end of the other coil is connected to electrical ground through a capacitor which resonates with the latter coil at the frequency of the RF power supply.

摘要翻译： 用于在半导体处理室中将电力感应耦合到等离子体的装置和方法。 在第一方面，感应线圈阵列分布在具有圆形横截面的几何表面上。 每个线圈具有楔形的横截面，使得阵列中任何两个相邻线圈的相邻侧面几乎平行于几何表面的圆形横截面的半径。 相邻线圈的平行侧面增强了由线圈阵列产生的磁场的径向均匀性。 在第二方面，通过将每个感应线圈连接到电源使得感应线圈和等离子体之间的静电耦合最小化，使得最接近等离子体的线圈的线的转弯接近电接地电位。 在一个实施例中，每个线圈的近端直接连接到电气接地。 在第二和第三实施例中，两个线圈在每个线圈的近端串联连接。 在第二实施例中，每个线圈的相对（“RF热”）端连接到RF电源的相应的平衡输出端。 在第三实施例中，一个线圈的热端连接到RF电源的不平衡输出，另一个线圈的热端通过电容器连接到电接地，该电容器以与第二线圈的频率谐振的电容器 射频电源。

公开(公告)号：US06825618B2

公开(公告)日：2004-11-30

申请号：US10442424

申请日：2003-05-20

申请人： Bryan Y. Pu ,  Hongching Shan ,  Claes Bjorkman ,  Kenny Doan ,  Mike Welch ,  Richard Raymond Mett

发明人： Bryan Y. Pu ,  Hongching Shan ,  Claes Bjorkman ,  Kenny Doan ,  Mike Welch ,  Richard Raymond Mett

IPC分类号： H01J724

CPC分类号： H01J37/321

摘要： Apparatus and method for inductively coupling electrical power to a plasma in a semiconductor process chamber. In a first aspect, an array of wedge-shaped induction coils are distributed around a circle. The sides of adjacent coils are parallel, thereby enhancing the radial uniformity of the magnetic field produced by the array. In a second aspect, electrostatic coupling between the induction coils and the plasma is minimized by connecting each induction coil to the power supply so that the turn of wire of the coil which is nearest to the plasma is near electrical ground potential. In one embodiment, the hot end of one coil is connected to the unbalanced output of an RF power supply, and the hot end of the other coil is connected to electrical ground through a capacitor which resonates with the latter coil at the frequency of the RF power supply.

摘要翻译： 用于在半导体处理室中将电力感应耦合到等离子体的装置和方法。 在第一方面，楔形感应线圈阵列分布在一个圆周围。 相邻线圈的侧面是平行的，从而增强阵列产生的磁场的径向均匀性。 在第二方面，通过将每个感应线圈连接到电源使得感应线圈和等离子体之间的静电耦合最小化，使得最接近等离子体的线圈的线的转弯接近电接地电位。 在一个实施例中，一个线圈的热端连接到RF电源的不平衡输出端，另一个线圈的热端通过电容器连接到电接地，电容器以RF的频率与后一个线圈谐振 电源。

公开(公告)号：US06403491B1

公开(公告)日：2002-06-11

申请号：US09704867

申请日：2000-11-01

申请人： Jingbao Liu ,  Judy Wang ,  Takehiko Komatsu ,  Bryan Y Pu ,  Kenny L Doan ,  Claes Bjorkman ,  Melody Chang ,  Yunsang Kim ,  Hongching Shan ,  Ruiping Wang

发明人： Jingbao Liu ,  Judy Wang ,  Takehiko Komatsu ,  Bryan Y Pu ,  Kenny L Doan ,  Claes Bjorkman ,  Melody Chang ,  Yunsang Kim ,  Hongching Shan ,  Ruiping Wang

IPC分类号： H01L213065

CPC分类号： H01L21/6875 ,  H01J37/32522 ,  H01L21/31116 ,  H01L21/67069 ,  H01L21/6833 ,  H01L21/68757 ,  H01L21/68785 ,  H01L21/68792 ,  H01L21/76802 ,  H01L21/76807 ,  H01L21/76897 ,  H01L2924/3011

摘要： A method for etching a dielectric in a thermally controlled plasma etch chamber with an expanded processing window. The method is adapted to incorporate benefits of a the thermal control and high evacuation capability of the chamber. Etchent gases include hydrocarbons, oxygen and inert gas. Explanation is provided for enablling the use of hexafluoro-1,3-butadiene in a capacitively coupled etch plasma. The method is very useful for creating via, self aligned contacts, dual damascene, and other dielectric etch.

摘要翻译： 一种用于在具有扩展的处理窗口的热控等离子体蚀刻室中蚀刻电介质的方法。 该方法适于结合腔室的热控制和高排气能力的优点。 Etchent气体包括碳氢化合物，氧气和惰性气体。 提供了解释在电容耦合蚀刻等离子体中使用六氟-1,3-丁二烯的方法。 该方法对于创建通孔，自对准触点，双镶嵌和其他电介质蚀刻非常有用。