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公开(公告)号:US20120145326A1
公开(公告)日:2012-06-14
申请号:US13401572
申请日:2012-02-21
CPC分类号: H01L21/67069 , H01J37/32082 , H01J37/32495 , H01J37/32623 , Y10T428/13
摘要: A plasma processing chamber has a lower liner with an integrated flow equalizer. In an etching process, the processing gases may be unevenly drawn from the processing chamber which may cause an uneven etching of the substrate. The integrated flow equalizer is configured to equalize the flow of the processing gases evacuated from the chamber via the lower liner.
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2.
公开(公告)号:US20120325406A1
公开(公告)日:2012-12-27
申请号:US13607425
申请日:2012-09-07
CPC分类号: H01L21/67069 , H01J37/32082 , H01J37/32495 , H01J37/32623 , Y10T428/13
摘要: A plasma processing chamber has a lower liner with an integrated flow equalizer. In an etching process, the processing gases may be unevenly drawn from the processing chamber which may cause an uneven etching of the substrate. The integrated flow equalizer is configured to equalize the flow of the processing gases evacuated from the chamber via the lower liner.
摘要翻译: 等离子体处理室具有具有集成流量均衡器的下衬套。 在蚀刻工艺中,处理气体可能不均匀地从处理室抽出,这可能导致基板的不均匀蚀刻。 集成流量均衡器被配置为使从腔室经由下衬套排出的处理气体的流量相等。
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