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    Etching chamber having flow equalizer and lower liner
    1.
    发明授权
    Etching chamber having flow equalizer and lower liner 有权
    蚀刻室具有流量均衡器和下层衬套

    公开(公告)号：US08313578B2

    公开(公告)日：2012-11-20

    申请号：US12624155

    申请日：2009-11-23

    申请人： James D. Carducci ,  Kin Pong Lo ,  Kallol Bera ,  Michael C. Kutney ,  Matthew L. Miller

    发明人： James D. Carducci ,  Kin Pong Lo ,  Kallol Bera ,  Michael C. Kutney ,  Matthew L. Miller

    IPC分类号： C23C16/52 ,  C23C16/455

    CPC分类号： H01J37/32623 ,  H01J37/32467

    摘要： A plasma processing chamber having a lowered flow equalizer and a lower chamber liner. In an etching process, the processing gases may be unevenly drawn from the processing chamber which may cause an uneven etching of the substrate. By equalizing the flow of the processing gases evacuated from the chamber, a more uniform etching may occur. By electrically coupling the flow equalizer to the chamber liners, the RF return path from the flow equalizer may run along the chamber liners and hence, reduce the amount of plasma drawn below the substrate during processing.

    摘要翻译： 具有降低的流量均衡器和下腔室衬套的等离子体处理室。 在蚀刻工艺中，处理气体可能不均匀地从处理室抽出，这可能导致基板的不均匀蚀刻。 通过均衡从室抽出的处理气体的流动，可能发生更均匀的蚀刻。 通过将流量均衡器电耦合到室衬套，来自流量均衡器的RF返回路径可以沿着室衬套运行，并且因此减少在处理期间在衬底下方拉制的等离子体的量。

    ETCHING CHAMBER HAVING FLOW EQUALIZER AND LOWER LINER
    2.
    发明申请
    ETCHING CHAMBER HAVING FLOW EQUALIZER AND LOWER LINER 有权
    具有流量均衡器和下层的蚀刻室

    公开(公告)号：US20100065213A1

    公开(公告)日：2010-03-18

    申请号：US12624155

    申请日：2009-11-23

    申请人： James D. Carducci ,  Kin Pong Lo ,  Kallol Bera ,  Michael C. Kutney ,  Matthew L. Miller

    发明人： James D. Carducci ,  Kin Pong Lo ,  Kallol Bera ,  Michael C. Kutney ,  Matthew L. Miller

    IPC分类号： H01L21/306

    CPC分类号： H01J37/32623 ,  H01J37/32467

    摘要： A plasma processing chamber having a lowered flow equalizer and a lower chamber liner. In an etching process, the processing gases may be unevenly drawn from the processing chamber which may cause an uneven etching of the substrate. By equalizing the flow of the processing gases evacuated from the chamber, a more uniform etching may occur. By electrically coupling the flow equalizer to the chamber liners, the RF return path from the flow equalizer may run along the chamber liners and hence, reduce the amount of plasma drawn below the substrate during processing.

    摘要翻译： 具有降低的流量均衡器和下腔室衬套的等离子体处理室。 在蚀刻工艺中，处理气体可能不均匀地从处理室抽出，这可能导致基板的不均匀蚀刻。 通过均衡从室抽出的处理气体的流动，可能发生更均匀的蚀刻。 通过将流量均衡器电耦合到室衬套，来自流量均衡器的RF返回路径可以沿着室衬套运行，并且因此减少在处理期间在衬底下方拉制的等离子体的量。

    Heated showerhead assembly
    9.
    发明授权
    Heated showerhead assembly 有权
    加热花洒组件

    公开(公告)号：US08876024B2

    公开(公告)日：2014-11-04

    申请号：US11972072

    申请日：2008-01-10

    申请人： James D. Carducci ,  Olga Regelman ,  Kallol Bera ,  Douglas A. Buchberger ,  Paul Brillhart

    发明人： James D. Carducci ,  Olga Regelman ,  Kallol Bera ,  Douglas A. Buchberger ,  Paul Brillhart

    IPC分类号： B05B1/14 ,  C23C16/455 ,  H01J37/32 ,  C23C16/44

    CPC分类号： H01J37/3244 ,  B32B43/00 ,  C23C16/4412 ,  C23C16/45565 ,  C23C16/4557 ,  C23C16/45591 ,  H01J37/32449 ,  H01J37/32724 ,  H01J2237/3343 ,  Y10T29/49815

    摘要： The present invention generally comprises a heated showerhead assembly that may be used to supply processing gases into a processing chamber. The processing chamber may be an etching chamber. When processing gas is evacuated from the processing chamber, the uniform processing of the substrate may be difficult. As the processing gas is pulled away from the substrate and towards the vacuum pump, the plasma, in the case of etching, may not be uniform across the substrate. Uneven plasma may lead to uneven etching. To prevent uneven etching, the showerhead assembly may be separated into two zones each having independently controllable gas introduction and temperature control. The first zone corresponds to the perimeter of the substrate while the second zone corresponds to the center of the substrate. By independently controlling the temperature and the gas flow through the showerhead zones, etching uniformity of the substrate may be increased.

    摘要翻译： 本发明通常包括可用于将处理气体供应到处理室中的加热喷头组件。 处理室可以是蚀刻室。 当处理气体从处理室排出时，衬底的均匀处理可能是困难的。 当处理气体从衬底被拉离并且朝向真空泵时，在蚀刻的情况下，等离子体在衬底上可能不均匀。 不均匀的等离子体可能导致不均匀的蚀刻。 为了防止不均匀的蚀刻，喷头组件可以分成两个区域，每个区域具有独立可控的气体引入和温度控制。 第一区域对应于衬底的周边，而第二区域对应于衬底的中心。 通过独立地控制温度和通过喷头区域的气体流动，可以增加基板的蚀刻均匀性。