-
公开(公告)号：US4286033A
公开(公告)日：1981-08-25
申请号：US127177
申请日：1980-03-05
CPC分类号： G03G5/102 , G03G5/0433
摘要： This invention is generally directed to inorganic overcoated photo-responsive devices comprised of a substrate, a layer of hole injecting material capable of injecting holes into a layer on its surface, this layer being comprised of trigonal selenium, a hole transport layer in operative contact with the hole injecting layer, this layer being comprised of a halogen doped selenium arsenic alloy, wherein the percentage by weight of selenium present is from about 99.5 percent to about 99.9 percent, the percentage by weight of arsenic present is from about 0.1 percent to about 0.5 percent, and the halogen is present in an amount of from about 10 parts per million, to about 200 parts per million; a charge generating layer overcoated on the hole transport layer, comprised of an inorganic photoconductive material; a hole trapping layer overcoated on the generator layer, the trapping layer being comprised of a halogen doped selenium arsenic alloy, containing from about 95 percent selenium, to 99.9 percent selenium, from about 0.1 percent to about 5 percent of arsenic and 10 parts per million to 200 parts per million of a halogen material, and a layer of insulating organic resin overlaying the charge generating layer. This device is useful in an electrophotographic imaging system using in a preferred embodiment a double charging sequence, that is, negative charging, followed by positive charging.
摘要翻译： 本发明一般涉及由基材，能够将孔注入其表面的层中的空穴注入材料层构成的无机涂布的光响应装置，该层由三角硒组成，空穴传输层与 空穴注入层，该层由卤素掺杂硒砷合金组成，其中存在的硒的重量百分比为约99.5％至约99.9％，存在的砷的重量百分数为约0.1％至约0.5 百分比，卤素的存在量为约百万分之十，约百万分之一; 在空穴传输层上涂覆的电荷产生层，由无机光电导材料构成; 覆盖在发生器层上的空穴捕获层，捕获层由含有约95％硒的卤素掺杂的硒砷合金，至99.9％的硒，约0.1％至约5％的砷和10份的百万分之一 至200ppm的卤素材料，以及覆盖电荷产生层的绝缘有机树脂层。 该装置在电子照相成像系统中有用，在优选实施方案中使用双重充电顺序，即负电荷，随后进行正电荷。
-
2.发明授权
公开(公告)号：US4330609A
公开(公告)日：1982-05-18
申请号：US262094
申请日：1981-05-11
CPC分类号： G03G5/102 , G03G5/0433
摘要： This invention is generally directed to inorganic overcoated photo-responsive devices comprised of a substrate, a layer of hole injecting material capable of injecting holes into a layer on its surface, this layer being comprised of trigonal selenium, a hole transport layer in operative contact with the hole injecting layer, this layer being comprised of a halogen doped selenium arsenic alloy, wherein the percentage by weight of selenium present is from about 99.5 percent to about 99.9 percent, the percentage by weight of arsenic present is from about 0.1 percent to about 0.5 percent, and the halogen is present in an amount of from about 10 parts per million, to about 200 parts per million; a charge generating layer overcoated on the hole transport layer, comprised of an inorganic photoconductive material; a hole trapping layer overcoated on the generator layer, the trapping layer being comprised of a halogen doped selenium arsenic alloy, containing from about 95 percent selenium, to 99.9 percent selenium, from about 0.1 percent to about 5 percent of arsenic and 10 parts per million to 200 parts per million of a halogen material, and a layer of insulating organic resin overlaying the charge generating layer. This device is useful in an electrophotographic imaging system using in a preferred embodiment a double charging sequence, that is, negative charging, followed by positive charging.
摘要翻译： 本发明一般涉及由基材，能够将孔注入其表面的层中的空穴注入材料层构成的无机涂布的光响应装置，该层由三角硒组成，空穴传输层与 空穴注入层，该层由卤素掺杂硒砷合金组成，其中存在的硒的重量百分比为约99.5％至约99.9％，存在的砷的重量百分数为约0.1％至约0.5 百分比，卤素的存在量为约百万分之十，约百万分之一; 在空穴传输层上涂覆的电荷产生层，由无机光电导材料构成; 覆盖在发生器层上的空穴捕获层，捕获层由含有约95％硒的卤素掺杂硒砷合金，至99.9％的硒，约0.1％至约5％的砷和10份的百万分之一 至200ppm的卤素材料，以及覆盖电荷产生层的绝缘有机树脂层。 该装置在电子照相成像系统中有用，在优选实施方案中使用双重充电顺序，即负电荷，随后进行正电荷。
-
搜索结果
2 条记录 (耗时 0.026 秒)