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139 条记录 (耗时 0.041 秒)

    Magnetic sensor with extended free layer and overlaid leads
    1.
    发明授权
    Magnetic sensor with extended free layer and overlaid leads 有权
    具有扩展自由层和重叠导线的磁性传感器

    公开(公告)号：US07652855B2

    公开(公告)日：2010-01-26

    申请号：US11595186

    申请日：2006-11-09

    申请人： James Mac Freitag ,  David Eugene Heim ,  Kuok San Ho ,  Wipul Pemsiri Jayasekara ,  Kim Y. Lee ,  Tsann Lin ,  Jyh-Shuey Lo ,  Mustafa Michael Pinarbasi ,  Ching Hwa Tsang

    发明人： James Mac Freitag ,  David Eugene Heim ,  Kuok San Ho ,  Wipul Pemsiri Jayasekara ,  Kim Y. Lee ,  Tsann Lin ,  Jyh-Shuey Lo ,  Mustafa Michael Pinarbasi ,  Ching Hwa Tsang

    IPC分类号： G11B5/39

    CPC分类号： G11B5/3932 ,  B82Y10/00 ,  B82Y25/00 ,  G11B2005/3996

    摘要： A lead overlay design of a magnetic sensor is described with sensor and free layer dimensions such that the free layer is stabilized by the large demagnetization field due to the shape anisotropy. In one embodiment the giant magnetoresistive (GMR) effect under the leads is destroyed by removing the antiferromagnetic (AFM) and pinned layers above the free layer. The overlaid lead pads are deposited on the exposed spacer layer at the sides of the mask that defines the active region. In other embodiment a layer of electrically insulating material is deposited over the sensor to encapsulate it and thereby insulate it from contact with the hardbias structures. Various embodiments with self-aligned leads are also described. In a variation of the encapsulation embodiment, the insulating material is also deposited under the lead pads so the electrical current is channeled through the active region of the sensor and sidewall deposited lead pads.

    摘要翻译： 用传感器和自由层尺寸描述磁传感器的引线覆盖设计，使得由于形状各向异性，自由层由大的退磁场稳定。 在一个实施例中，引线下的巨磁阻（GMR）效应通过去除自由层上方的反铁磁（AFM）和固定层而被破坏。 覆盖的引线焊盘沉积在限定有源区的掩模侧面上的暴露间隔层上。 在另一个实施例中，电绝缘材料层沉积在传感器上以将其封装并由此使其与硬质合金结构的接触绝缘。 还描述了具有自对准引线的各种实施例。 在封装实施例的变型中，绝缘材料也沉积在引线焊盘下方，使得电流通过传感器的有源区域和侧壁沉积的引线焊盘。

    Magnetic recording head with overlaid leads
    2.
    发明申请
    Magnetic recording head with overlaid leads 有权
    带重叠导线的磁记录头

    公开(公告)号：US20080112090A1

    公开(公告)日：2008-05-15

    申请号：US11595186

    申请日：2006-11-09

    申请人： James Mac Freitag ,  David Eugene Heim ,  Kuok San Ho ,  Wipul Pemsiri Jayasekara ,  Kim Y. Lee ,  Tsann Lin ,  Jyh-Shuey Lo ,  Mustafa Michael Pinarbasi ,  Ching Hwa Tsang

    发明人： James Mac Freitag ,  David Eugene Heim ,  Kuok San Ho ,  Wipul Pemsiri Jayasekara ,  Kim Y. Lee ,  Tsann Lin ,  Jyh-Shuey Lo ,  Mustafa Michael Pinarbasi ,  Ching Hwa Tsang

    IPC分类号： G11B5/33

    CPC分类号： G11B5/3932 ,  B82Y10/00 ,  B82Y25/00 ,  G11B2005/3996

    摘要： A lead overlay design of a magnetic sensor is described with sensor and free layer dimensions such that the free layer is stabilized by the large demagnetization field due to the shape anisotropy. In one embodiment the giant magnetoresistive (GMR) effect under the leads is destroyed by removing the antiferromagnetic (AFM) and pinned layers above the free layer. The overlaid lead pads are deposited on the exposed spacer layer at the sides of the mask that defines the active region. In other embodiment a layer of electrically insulating material is deposited over the sensor to encapsulate it and thereby insulate it from contact with the hardbias structures. Various embodiments with self-aligned leads are also described. In a variation of the encapsulation embodiment, the insulating material is also deposited under the lead pads so the electrical current is channeled through the active region of the sensor and sidewall deposited lead pads.

    摘要翻译： 用传感器和自由层尺寸描述磁传感器的引线覆盖设计，使得由于形状各向异性，自由层由大的退磁场稳定。 在一个实施例中，引线下的巨磁阻（GMR）效应通过去除自由层上方的反铁磁（AFM）和固定层而被破坏。 覆盖的引线焊盘沉积在限定有源区的掩模侧面上的暴露间隔层上。 在另一个实施例中，电绝缘材料层沉积在传感器上以将其封装并由此使其与硬质合金结构的接触绝缘。 还描述了具有自对准引线的各种实施例。 在封装实施例的变型中，绝缘材料也沉积在引线焊盘下方，使得电流通过传感器的有源区域和侧壁沉积的引线焊盘。

    Magnetic sensor having a physically hard insulation layer over a magnetic bias structure
    4.
    发明授权
    Magnetic sensor having a physically hard insulation layer over a magnetic bias structure 失效
    磁传感器在磁偏置结构上具有物理硬绝缘层

    公开(公告)号：US08213132B2

    公开(公告)日：2012-07-03

    申请号：US11938677

    申请日：2007-11-12

    申请人： David Eugene Heim ,  Kim Y. Lee ,  Tsann Lin ,  Jih-Shiuan Luo

    发明人： David Eugene Heim ,  Kim Y. Lee ,  Tsann Lin ,  Jih-Shiuan Luo

    IPC分类号： G11B5/39

    CPC分类号： B82Y10/00 ,  G11B5/3163 ,  Y10T29/49048 ,  Y10T403/58

    摘要： A narrow track-width magnetoresistive sensor by defining a trench formed between first and second hard bias layers and depositing the sensor into the trench. The sensor can include a sensor stack sandwiched between first and second electrically conductive lead layers. First and second electrically insulating side walls are formed at either side of the sensor stack. First and second hard bias layers extend from the sides of the sensor stack, being separated from the sensor stack by the first and second electrically insulating side walls. First and second physically hard insulation layers are provided over each of the hard bias layers.

    摘要翻译： 通过限定形成在第一和第二硬偏置层之间的沟槽并将传感器沉积到沟槽中的窄轨道宽度磁阻传感器。 传感器可以包括夹在第一和第二导电引线层之间的传感器堆叠。 第一和第二电绝缘侧壁形成在传感器堆叠的任一侧。 第一和第二硬偏压层从传感器堆叠的侧面延伸，通过第一和第二电绝缘侧壁与传感器堆叠分离。 第一和第二物理硬绝缘层设置在每个硬偏压层上。

    Method of forming an embedded read element
    6.
    发明授权
    Method of forming an embedded read element 失效
    形成嵌入式读取元素的方法

    公开(公告)号：US07062838B2

    公开(公告)日：2006-06-20

    申请号：US10666679

    申请日：2003-09-19

    申请人： Meng Ding ,  Kuok San Ho ,  Tsann Lin ,  Huey-Ming Tzeng

    发明人： Meng Ding ,  Kuok San Ho ,  Tsann Lin ,  Huey-Ming Tzeng

    IPC分类号： G11B5/187 ,  H01F7/06

    CPC分类号： B24B37/013 ,  B24B49/10 ,  G11B5/39 ,  Y10T29/49041 ,  Y10T29/49046 ,  Y10T29/49048

    摘要： A method of forming an embedded read element is used in the fabrication process of a magnetic head assembly including write and read heads. In this method, three photolithographic patterning steps are applied for defining the designed height of the embedded read element, defining its designed width, and connecting it with conducting layers, respectively. An in-line lapping guide is also formed with a spacing in front of the embedded read element. In this method, two mechanical lapping steps are applied, one monitored by measuring the resistance of a parallel circuit of the embedded read element and the in-line lapping guide, and the other monitored by measuring the GMR response of the embedded read element.

    摘要翻译： 在包括写入和读取头的磁头组件的制造过程中使用形成嵌入式读取元件的方法。 在该方法中，应用三个光刻图案步骤来定义嵌入式读取元件的设计高度，限定其设计宽度，并将其与导电层连接。 在嵌入式读取元件的前面还形成有间距的在线研磨引导件。 在这种方法中，应用了两个机械研磨步骤，一个通过测量嵌入式读取元件的并联电路的电阻和在线研磨导轨进行监测，另一个通过测量嵌入式读取元件的GMR响应进行监测。

    In-line contiguous resistive lapping guide for magnetic sensors
    7.
    发明申请
    In-line contiguous resistive lapping guide for magnetic sensors 失效
    用于磁传感器的在线连续电阻研磨导轨

    公开(公告)号：US20060068685A1

    公开(公告)日：2006-03-30

    申请号：US10954868

    申请日：2004-09-30

    申请人： Marie-Claire Cyrille ,  Kuok San Ho ,  Tsann Lin ,  Scott MacDonald ,  Huey-Ming Tzeng

    发明人： Marie-Claire Cyrille ,  Kuok San Ho ,  Tsann Lin ,  Scott MacDonald ,  Huey-Ming Tzeng

    IPC分类号： B24B49/00

    CPC分类号： B24B37/00 ,  B24B37/013 ,  B24B41/06 ,  B24B49/10 ,  Y10T29/49036 ,  Y10T29/49048

    摘要： An in-line lapping guide uses a contiguous resistor in a cavity to separate a lithographically-defined sensor from the in-line lapping guide. As lapping proceeds through the cavity toward the sensor, the resistance across the sensor leads increases to a specific target, thereby indicating proximity to the sensor itself. The contiguous resistor is fabricated electrically in parallel to the sensor and the in-line lapping guide. The total resistance across the sensor leads show resistance change even when lapping through the cavity portion. One method to produce the contiguous resistor is to partial mill the cavity between the sensor and the in-line lapping guide so that a film of metal is left. Total resistance across leads is the parallel resistance of the sensor, the contiguous resistor, and the in-line lapping guide.

    摘要翻译： 在线研磨引导件使用空腔中的连续电阻器将光刻定影传感器与在线研磨导轨分离。 当研磨通过腔朝向传感器进行时，传感器引线上的电阻增加到特定目标，从而指示传感器本身的接近度。 连续的电阻器与传感器和在线研磨导轨平行地制造。 传感器引线上的总电阻即使在通过空腔部分研磨时也会显示电阻变化。 产生连续电阻器的一种方法是将传感器和在线研磨引导件之间的空腔部分研磨以留下金属膜。 引线之间的总电阻是传感器，相邻电阻器和在线研磨导轨的并联电阻。

    Method of providing a low-stress sensor configuration for a lithography-defined read sensor
    8.
    发明授权
    Method of providing a low-stress sensor configuration for a lithography-defined read sensor 失效
    为光刻定义的读取传感器提供低应力传感器配置的方法

    公开(公告)号：US07469465B2

    公开(公告)日：2008-12-30

    申请号：US10881581

    申请日：2004-06-30

    申请人： Meng Ding ,  Kuok San Ho ,  Tsann Lin ,  Huey-Ming Tzeng

    发明人： Meng Ding ,  Kuok San Ho ,  Tsann Lin ,  Huey-Ming Tzeng

    IPC分类号： G11B5/187

    CPC分类号： G11B5/3166 ,  G11B5/3169 ,  G11B5/3173 ,  G11B5/3903 ,  Y10T29/49041 ,  Y10T29/49046 ,  Y10T29/49052

    摘要： One illustrative method of fabricating a read sensor of a magnetic head includes the steps of forming a plurality of read sensor layers on a wafer; etching the read sensor layers to form a read sensor structure with a trench in front of the read sensor structure; forming a highly porous material within the trench; and slicing the wafer and lapping the sliced wafer through the highly porous material until an air bearing surface (ABS) of the magnetic head is reached. Advantageously, the highly porous material in front of the read sensor structure reduces mechanical stress on the read sensor during the lapping process. This reduces the likelihood that the amplitude of the read sensor will be degraded or set in a “flipped” or reversed orientation, as well as reduces the likelihood that electrostatic discharge (ESD) damage to the read sensor will occur.

    摘要翻译： 一种制造磁头的读取传感器的说明性方法包括以下步骤：在晶片上形成多个读取传感器层; 蚀刻读取的传感器层以形成读取的传感器结构，其中在传感器结构的前面具有沟槽; 在沟槽内形成高度多孔的材料; 并切片晶片并通过高度多孔材料研磨切片的晶片，直到达到磁头的空气轴承表面（ABS）。 有利地，在读取传感器结构前面的高度多孔材料在研磨过程中减小了读取传感器上的机械应力。 这降低了读取传感器的幅度将被降级或设置为“翻转”或反向取向的可能性，并且降低了对读取传感器的静电放电（ESD）损坏将发生的可能性。

    In-line contiguous resistive lapping guide for magnetic sensors
    9.
    发明授权
    In-line contiguous resistive lapping guide for magnetic sensors 失效
    用于磁传感器的在线连续电阻研磨导轨

    公开(公告)号：US07244169B2

    公开(公告)日：2007-07-17

    申请号：US10954868

    申请日：2004-09-30

    申请人： Marie-Claire Cyrille ,  Kuok San Ho ,  Tsann Lin ,  Scott Arthur MacDonald ,  Huey-Ming Tzeng

    发明人： Marie-Claire Cyrille ,  Kuok San Ho ,  Tsann Lin ,  Scott Arthur MacDonald ,  Huey-Ming Tzeng

    IPC分类号： B24B49/00 ,  B24B51/00 ,  G11B5/42

    CPC分类号： B24B37/00 ,  B24B37/013 ,  B24B41/06 ,  B24B49/10 ,  Y10T29/49036 ,  Y10T29/49048

    摘要： An in-line lapping guide uses a contiguous resistor in a cavity to separate a lithographically-defined sensor from the in-line lapping guide. As lapping proceeds through the cavity toward the sensor, the resistance across the sensor leads increases to a specific target, thereby indicating proximity to the sensor itself. The contiguous resistor is fabricated electrically in parallel to the sensor and the in-line lapping guide. The total resistance across the sensor leads show resistance change even when lapping through the cavity portion. One method to produce the contiguous resistor is to partial mill the cavity between the sensor and the in-line lapping guide so that a film of metal is left. Total resistance across leads is the parallel resistance of the sensor, the contiguous resistor, and the in-line lapping guide.

    摘要翻译： 在线研磨引导件使用空腔中的连续电阻器将光刻定影传感器与在线研磨导轨分离。 当研磨通过腔朝向传感器进行时，传感器引线上的电阻增加到特定目标，从而指示传感器本身的接近度。 连续的电阻器与传感器和在线研磨导轨平行地制造。 传感器引线上的总电阻即使在通过空腔部分研磨时也会显示电阻变化。 产生连续电阻器的一种方法是将传感器和在线研磨引导件之间的空腔部分研磨，使得留下金属膜。 引线之间的总电阻是传感器，相邻电阻器和在线研磨导轨的并联电阻。

    Low resistance tunnel magnetoresistance (TMR) structure
    10.
    发明授权
    Low resistance tunnel magnetoresistance (TMR) structure 有权
    低电阻隧道磁阻（TMR）结构

    公开(公告)号：US08325450B2

    公开(公告)日：2012-12-04

    申请号：US12332010

    申请日：2008-12-10

    申请人： Ying Hong ,  Kochan Ju ,  Tsann Lin ,  Ching Hwa Tsang

    发明人： Ying Hong ,  Kochan Ju ,  Tsann Lin ,  Ching Hwa Tsang

    IPC分类号： G01B5/66

    CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/098 ,  G11B5/3906 ,  Y10T428/1114

    摘要： A magnetic structure in one embodiment includes a tunnel barrier layer; a free layer; and a buffer layer between the tunnel barrier layer and the free layer, wherein a cross sectional area of the tunnel barrier layer in a direction parallel to a plane of deposition thereof is greater than a cross sectional area of the free layer in a direction parallel to a plane of deposition thereof, wherein a cross sectional area of the buffer layer in a direction parallel to a plane of deposition thereof is greater than a cross sectional area of the free layer in the direction parallel to the plane of deposition thereof. Additional systems and methods are also presented.

    摘要翻译： 一个实施例中的磁性结构包括隧道势垒层; 自由层 以及所述隧道势垒层和所述自由层之间的缓冲层，其中所述隧道势垒层在与其沉积平面平行的方向上的横截面面积大于所述自由层在平行于所述隧道势垒层的方向上的横截面积 其沉积平面，其中在平行于其沉积平面的方向上的缓冲层的横截面面积大于在平行于其沉积平面的方向上的自由层的横截面面积。 还介绍了其他系统和方法。