-
1.发明授权公开(公告)号：US07436629B2
公开(公告)日：2008-10-14
申请号：US11877578
申请日：2007-10-23
申请人： James Mac Freitag , Hardayal Singh Gill , Yimin Hsu , Yinshi Liu
发明人： James Mac Freitag , Hardayal Singh Gill , Yimin Hsu , Yinshi Liu
IPC分类号： G11B5/127
CPC分类号： G11B5/1278 , G11B5/147 , G11B5/3116 , G11B5/3146
摘要： A magnetic structure for use in a perpendicular magnetic write head that prevents magnetic domain formation and reduces magnetic remanence in the structure. The magnetic structure includes magnetic layers sandwiched between thin non-magnetic layers. Each of the magnetic layers includes a relatively thicker layer of CoFe sandwiched between relatively thinner layers of NiFe.
摘要翻译： 用于垂直磁写头的磁结构，其防止磁畴形成并减小结构中的磁残余。 磁性结构包括夹在薄的非磁性层之间的磁性层。 每个磁性层包括夹在相对较薄的NiFe层之间的相对较厚的CoFe层。
-
公开(公告)号：US07280314B2
公开(公告)日：2007-10-09
申请号：US10883345
申请日：2004-06-30
申请人： Hardayal Singh Gill , James Mac Freitag , Yimin Hsu , Yinshi Liu
发明人： Hardayal Singh Gill , James Mac Freitag , Yimin Hsu , Yinshi Liu
IPC分类号： G11B5/127
CPC分类号： G11B5/3906 , G11B5/1278 , G11B5/3116
摘要： A magnetic write head for perpendicular magnetic recording having a laminated write pole with improved low saturation field.
摘要翻译： 一种用于垂直磁记录的磁写头，具有具有改善的低饱和场的层叠写极。
-
3.发明授权Anti-parallel tab sensor fabrication using chemical-mechanical polishing process 失效使用化学机械抛光工艺制造反平行片传感器公开(公告)号：US07057863B2
公开(公告)日：2006-06-06
申请号：US10982220
申请日：2004-11-05
IPC分类号： G11B5/39
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/012 , G11B5/313 , G11B5/3163 , G11B5/3903 , G11B5/3906 , G11B5/398 , G11B2005/3996 , Y10T29/49048
摘要： A method for fabricating a sensor having anti-parallel tab regions. The method includes forming a free layer, and forming a first layer of a carbon composition above the active area of the free layer. A layer of resist is formed above the first layer of carbon composition. A bias layer is formed above the tab areas of the free layer, the bias layer being operative to substantially pin magnetic moments of the tab areas of the free layer. Leads are formed above the bias layer. A second layer of carbon composition is formed above the tab areas of the free layer. Any material above a plane extending parallel to portions of the second layer of carbon composition above the tab areas are removed using chemical-mechanical polishing. Any remaining carbon composition is removed.
摘要翻译： 一种用于制造具有反平行突片区域的传感器的方法。 该方法包括形成自由层，并且在自由层的有效区域上方形成碳组合物的第一层。 在第一层碳组合物之上形成一层抗蚀剂。 偏置层形成在自由层的突片区域上方，偏置层可操作以基本上固定自由层的突片区域的磁矩。 引线形成在偏置层上方。 第二层碳组合物形成在自由层的突片区域上方。 使用化学机械抛光除去平行于第二层碳组合物的部分的平面延伸的平面上的任何材料。 任何剩余的碳组成被除去。
-
4.发明授权Current perpendicular to plane GMR and TMR sensors with improved magnetic properties using Ru/Si seed layers 有权电流垂直于平面GMR和TMR传感器具有改进的磁性能使用Ru / Si种子层公开(公告)号：US08068315B2
公开(公告)日：2011-11-29
申请号：US11862119
申请日：2007-09-26
IPC分类号： G11B5/39
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3906 , G11B2005/3996
摘要： A magnetoresisive sensor having a thin seed layer that provides an exceptionally smooth interface between layers of the sensor stack. The exceptionally smooth interface provided by the seed layer reduces interlayer exchange coupling allowing the non-magnetic spacer layer (or barrier layer) to be very thin. The seed layer includes a thin layer of Ru and a thin layer of Si which intermix to form a homogeneous, amorphous thin seed layer of Ru-silicide.
摘要翻译： 具有薄种子层的磁感应传感器，其在传感器堆叠的层之间提供非常平滑的界面。 由种子层提供的非常平滑的界面减少层间交换耦合，使得非磁性间隔层（或阻挡层）非常薄。 种子层包括Ru的薄层和Si的薄层，其混合以形成Ru-硅化物的均匀的非晶态薄晶种层。
-
5.发明授权公开(公告)号：US07082017B2
公开(公告)日：2006-07-25
申请号：US10833213
申请日：2004-04-26
IPC分类号： G11B5/39
CPC分类号： B82Y10/00 , G11B5/3903 , G11B5/3932 , G11B5/3967
摘要： A spin valve sensor includes a spacer layer which is located between a free layer and an antiparallel (AP) pinned layer structure wherein the AP pinned layer structure includes an antiparallel coupling layer which is located between and interfaces first and second AP pinned layers with the second AP pinned layer interfacing the spacer layer. Each of the first and second AP pinned layers is composed of cobalt iron (CoFe) wherein the iron (Fe) content in the cobalt iron (CoFe) of one of the first and second AP pinned layers is greater than the iron (Fe) content in the cobalt iron (CoFe) in the other one of the first and second AP pinned layers.
-
6.发明授权Self-pinned spin valve sensor having its first AP pinned layer thicker than its second AP pinned layer to reduce the likelihood of amplitude flip 失效自固定自旋阀传感器，其第一个AP固定层比第二个AP钉扎层厚，以降低幅度翻转的可能性公开(公告)号：US07466524B2
公开(公告)日：2008-12-16
申请号：US11301877
申请日：2005-12-13
IPC分类号： G11B5/127
CPC分类号： G11B5/33 , G11B5/3932 , G11B2005/3996
摘要： In one illustrative example, a spin valve (SV) sensor of the self-pinned type includes a free layer; an antiparallel (AP) self-pinned layer structure; and a non-magnetic electrically conductive spacer layer in between the free layer and the AP self-pinned layer structure. The AP self-pinned layer structure includes a first AP pinned layer having a first thickness; a second AP pinned layer having a second thickness; and an antiparallel coupling (APC) layer formed between the first and the second AP pinned layers. The first thickness is slightly greater than the second thickness. Configured as such, the AP pinned layer structure provides for a net magnetic moment that is in the same direction as a magnetic field produced by the sense current flow, which reduces the likelihood of amplitude flip in the SV sensor.
摘要翻译： 在一个说明性示例中，自固定型的自旋阀（SV）传感器包括自由层; 反平行（AP）自固定层结构; 以及在自由层和AP自固位层结构之间的非磁性导电间隔层。 AP自固定层结构包括具有第一厚度的第一AP钉扎层; 具有第二厚度的第二AP钉扎层; 以及形成在第一和第二AP钉扎层之间的反平行耦合（APC）层。 第一厚度略大于第二厚度。 如此配置，AP钉扎层结构提供了与由感测电流产生的磁场方向相同的净磁矩，这降低了SV传感器中振幅翻转的可能性。
-
7.发明授权Method and apparatus for enhanced dual spin valve giant magnetoresistance effects having second spin valve self-pinned composite layer 有权具有第二自旋阀自固定复合层的增强双自旋阀巨磁阻效应的方法和装置公开(公告)号：US07038889B2
公开(公告)日：2006-05-02
申请号：US10260971
申请日：2002-09-30
IPC分类号： G11B5/39
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/00 , G11B5/313 , G11B5/3903 , G11B5/3954
摘要： A dual spin valve giant magnetoresistance (GMR) sensor having two spin valves with the second spin valve being self-biased is disclosed herein. According to the present invention a dual spin valve system is disclosed wherein the first of the two spin valves in the dual spin valve element is pinned through exchange coupling, i.e., a first anti-ferromagnetic pinning layer and a first ferromagnetic pinned layer structure are exchange coupled for pinning the first magnetic moment of the first ferromagnetic pinned layer structure in a first direction. The second of the two spin valves in the dual spin valve system is self-pinned. The self-pinned spin valve does not use any anti-ferromagnetic layers to pin the magnetization of the pinned layers.
摘要翻译： 本文公开了具有两个自旋阀的双自旋阀巨磁电阻（GMR）传感器，其中第二自旋阀是自偏压的。 根据本发明，公开了一种双自旋阀系统，其中双自旋阀元件中的两个自旋阀中的第一个通过交换耦合被钉扎，即，第一反铁磁钉扎层和第一铁磁钉扎层结构是交换 耦合以将第一铁磁性钉扎层结构的第一磁矩固定在第一方向上。 双自旋阀系统中的两个自旋阀中的第二个是自固定的。 自锁自旋阀不使用任何反铁磁层来固定被钉扎层的磁化。
-
8.发明授权Self-pinned spin valve sensor having its first AP pinned layer thicker than its second AP pinned layer to reduce the likelihood of amplitude flip 失效自固定自旋阀传感器，其第一个AP固定层比第二个AP钉扎层厚，以降低幅度翻转的可能性公开(公告)号：US07019949B2
公开(公告)日：2006-03-28
申请号：US10732200
申请日：2003-12-10
IPC分类号： G11B5/127
CPC分类号： G11B5/33 , G11B5/3932 , G11B2005/3996
摘要： In one illustrative example, a spin valve (SV) sensor of the self-pinned type includes a free layer; an antiparallel (AP) self-pinned layer structure; and a non-magnetic electrically conductive spacer layer in between the free layer and the AP self-pinned layer structure. The AP self-pinned layer structure includes a first AP pinned layer having a first thickness; a second AP pinned layer having a second thickness; and an antiparallel coupling (APC) layer formed between the first and the second AP pinned layers. The first thickness is slightly greater than the second thickness. Configured as such, the AP pinned layer structure provides for a net magnetic moment that is in the same direction as a magnetic field produced by the sense current flow, which reduces the likelihood of amplitude flip in the SV sensor.
摘要翻译： 在一个说明性示例中，自固定型的自旋阀（SV）传感器包括自由层; 反平行（AP）自固定层结构; 以及在自由层和AP自固位层结构之间的非磁性导电间隔层。 AP自固定层结构包括具有第一厚度的第一AP钉扎层; 具有第二厚度的第二AP钉扎层; 以及形成在第一和第二AP钉扎层之间的反平行耦合（APC）层。 第一厚度略大于第二厚度。 如此配置，AP钉扎层结构提供了与由感测电流产生的磁场方向相同的净磁矩，这降低了SV传感器中振幅翻转的可能性。
-
9.发明授权Anti-parallel tab sensor fabrication using chemical-mechanical polishing process 失效使用化学机械抛光工艺制造反平行片传感器公开(公告)号：US06954344B2
公开(公告)日：2005-10-11
申请号：US10439464
申请日：2003-05-16
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/012 , G11B5/313 , G11B5/3163 , G11B5/3903 , G11B5/3906 , G11B5/398 , G11B2005/3996 , Y10T29/49048
摘要： A method for fabricating a sensor having anti-parallel tab regions. The method includes forming a free layer, and forming a first layer of a carbon composition above the active area of the free layer. A layer of resist is formed above the first layer of carbon composition. A bias layer is formed above the tab areas of the free layer, the bias layer being operative to substantially pin magnetic moments of the tab areas of the free layer. Leads are formed above the bias layer. A second layer of carbon composition is formed above the tab areas of the free layer. Any material above a plane extending parallel to portions of the second layer of carbon composition above the tab areas are removed using chemical-mechanical polishing. Any remaining carbon composition is removed.
摘要翻译： 一种用于制造具有反平行突片区域的传感器的方法。 该方法包括形成自由层，并且在自由层的有效区域上方形成碳组合物的第一层。 在第一层碳组合物之上形成一层抗蚀剂。 偏置层形成在自由层的突片区域上方，偏置层可操作以基本上固定自由层的突片区域的磁矩。 引线形成在偏置层上方。 第二层碳组合物形成在自由层的突片区域上方。 使用化学机械抛光除去平行于第二层碳组合物的部分的平面延伸的平面上的任何材料。 任何剩余的碳组成被除去。
-
公开(公告)号：US06785102B2
公开(公告)日：2004-08-31
申请号：US10125941
申请日：2002-04-18
IPC分类号： G11B539
CPC分类号： B82Y10/00 , G11B5/012 , G11B5/3903 , G11B5/3967
摘要： A spin valve sensor includes a free layer structure which is located between first and second spacer layers and the first and second spacer layers are located between first and second AP pinned layer structures. Each of the AP pinned layer structures has first and second AP pinned layers with the first AP pinned layer of the first AP pinned layer structure interfacing the first spacer layer and the first AP pinned layer of the second AP pinned layer structure interfacing the second spacer layer. The magnetic thickness of each of the first AP pinned layers is either greater or less than the magnetic thickness of either of the second AP pinned layers of the first and second AP pinned layer structures so that a magnetic field oriented perpendicular to an air bearing surface (ABS) of the sensor sets the magnetic moments of the first and second AP pinned layer structures in-phase so that changes in resistances of the sensor upon rotation of a magnetic moment of the free layer structure is additive.
摘要翻译： 自旋阀传感器包括位于第一和第二间隔层之间的自由层结构，并且第一和第二间隔层位于第一和第二AP钉扎层结构之间。 AP被钉扎层结构中的每一个具有第一和第二AP钉扎层，其中第一AP钉扎层结构的第一AP钉扎层与第一间隔层和第二AP钉扎层结构的第一AP钉扎层相接， 。 第一AP钉扎层中的每一个的磁性厚度大于或小于第一和第二AP钉扎层结构的第二AP钉扎层中的任一个的磁性厚度，使得垂直于空气支承表面（ ABS）将第一和第二AP钉扎层结构的磁矩同相设置，使得自由层结构的磁矩旋转时传感器的电阻的变化是相加的。
-
-
-
-
-
-
-
-
-
搜索结果
296 条记录 (耗时 0.027 秒)