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公开(公告)号：US07652855B2
公开(公告)日：2010-01-26
申请号：US11595186
申请日：2006-11-09
申请人： James Mac Freitag , David Eugene Heim , Kuok San Ho , Wipul Pemsiri Jayasekara , Kim Y. Lee , Tsann Lin , Jyh-Shuey Lo , Mustafa Michael Pinarbasi , Ching Hwa Tsang
发明人： James Mac Freitag , David Eugene Heim , Kuok San Ho , Wipul Pemsiri Jayasekara , Kim Y. Lee , Tsann Lin , Jyh-Shuey Lo , Mustafa Michael Pinarbasi , Ching Hwa Tsang
IPC分类号： G11B5/39
CPC分类号： G11B5/3932 , B82Y10/00 , B82Y25/00 , G11B2005/3996
摘要： A lead overlay design of a magnetic sensor is described with sensor and free layer dimensions such that the free layer is stabilized by the large demagnetization field due to the shape anisotropy. In one embodiment the giant magnetoresistive (GMR) effect under the leads is destroyed by removing the antiferromagnetic (AFM) and pinned layers above the free layer. The overlaid lead pads are deposited on the exposed spacer layer at the sides of the mask that defines the active region. In other embodiment a layer of electrically insulating material is deposited over the sensor to encapsulate it and thereby insulate it from contact with the hardbias structures. Various embodiments with self-aligned leads are also described. In a variation of the encapsulation embodiment, the insulating material is also deposited under the lead pads so the electrical current is channeled through the active region of the sensor and sidewall deposited lead pads.
摘要翻译： 用传感器和自由层尺寸描述磁传感器的引线覆盖设计，使得由于形状各向异性，自由层由大的退磁场稳定。 在一个实施例中，引线下的巨磁阻（GMR）效应通过去除自由层上方的反铁磁（AFM）和固定层而被破坏。 覆盖的引线焊盘沉积在限定有源区的掩模侧面上的暴露间隔层上。 在另一个实施例中，电绝缘材料层沉积在传感器上以将其封装并由此使其与硬质合金结构的接触绝缘。 还描述了具有自对准引线的各种实施例。 在封装实施例的变型中，绝缘材料也沉积在引线焊盘下方，使得电流通过传感器的有源区域和侧壁沉积的引线焊盘。
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公开(公告)号：US07497008B2
公开(公告)日：2009-03-03
申请号：US11211877
申请日：2005-08-24
申请人： Tsung Yuan Chen , Frederick Hayes Dill , James Mac Freitag , Kuok San Ho , Wipul Pemsiri Jayasekara , Kim Y. Lee , Mustafa Michael Pinarbasi , Ching Hwa Tsang , Patrick Rush Webb
发明人： Tsung Yuan Chen , Frederick Hayes Dill , James Mac Freitag , Kuok San Ho , Wipul Pemsiri Jayasekara , Kim Y. Lee , Mustafa Michael Pinarbasi , Ching Hwa Tsang , Patrick Rush Webb
CPC分类号： G11B5/3932 , G11B5/3929 , G11B5/398 , Y10T29/49032 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： An embodiment of the invention is a magnetic head with overlaid lead pads that contact the top surface of the sensor between the hardbias structures and do not contact the hardbias structures which are electrically insulated from direct contact with the sensor. The lead pad contact area on the top of the sensor is defined by sidewall deposition of a conductive material to form leads pads on a photoresist prior to formation of the remainder of the leads. The conductive material for the lead pads is deposited at a shallow angle to maximize the sidewall deposition on the photoresist, then ion-milled at a high angle to remove the conductive material from the field while leaving the sidewall material. An insulation layer is deposited on the lead material at a high angle, then milled at a shallow angle to remove insulation from the sidewall.
摘要翻译： 本发明的一个实施例是具有覆盖的引线焊盘的磁头，该焊盘在硬质合金结构之间接触传感器的顶表面，并且不接触与传感器直接接触的电绝缘的硬质合金结构。 传感器顶部的引线焊盘接触区域由导电材料的侧壁沉积限定，以在形成其余引线之前在光致抗蚀剂上形成引线焊盘。 用于引线焊盘的导电材料以浅角度沉积，以使光致抗蚀剂上的侧壁沉积最大化，然后以高角度离子研磨，以从外界移除导电材料同时留下侧壁材料。 绝缘层以高角度沉积在引线材料上，然后以浅角度铣削以除去与侧壁的绝缘。
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公开(公告)号：US07420787B2
公开(公告)日：2008-09-02
申请号：US11204973
申请日：2005-08-15
IPC分类号： G11B5/39
CPC分类号： G01R33/093 , B82Y10/00 , B82Y25/00 , G11B5/3906 , G11B2005/3996
摘要： A magnetoresistive sensor having a pinned layer that extends beyond the stripe height defined by the free layer of the sensor. The extended pinned layer has a strong shape induced anisotropy that maintains pinning of the pinned layer moment. The extended portion of the pinned layer has sides beyond the stripe height that are perfectly aligned with the sides of the sensor within the stripe height. This perfect alignment is made possible by a manufacturing method that uses a mask structure for more than one manufacturing phase, eliminating the need for multiple mask alignments.
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公开(公告)号：US07369371B2
公开(公告)日：2008-05-06
申请号：US11204452
申请日：2005-08-15
IPC分类号： G11B5/33
CPC分类号： G11B5/3906 , B82Y25/00 , G01R33/093 , G11B5/398
摘要： A magnetoresistive sensor having a pinned layer that extends beyond the stripe height defined by the free layer of the sensor. The extended pinned layer has a strong shape induced anisotropy that maintains pinning of the pinned layer moment. The extended portion of the pinned layer has sides beyond the stripe height that are perfectly aligned with the sides of the sensor within the stripe height. This perfect alignment is made possible by a manufacturing method that uses a mask structure for more than one manufacturing phase, eliminating the need for multiple mask alignments.
摘要翻译： 磁阻传感器具有延伸超过由传感器的自由层限定的条纹高度的钉扎层。 延伸的钉扎层具有强烈的形状诱导的各向异性，保持钉扎层力矩的钉扎。 被钉扎层的延伸部分具有超过条带高度的侧面，其在条纹高度内完全与传感器的侧面对准。 通过使用掩模结构用于多于一个制造阶段的制造方法，可以实现这种完美的对准，从而消除了对多个掩模对准的需要。
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5.发明授权Magnetoresistive sensor having an enhanced lead overlay design and shape enhanced pinning 失效具有增强的引线覆盖设计和形状的磁阻传感器增强了钉扎公开(公告)号：US07663846B2
公开(公告)日：2010-02-16
申请号：US11297151
申请日：2005-12-07
IPC分类号： G11B5/33
CPC分类号： B82Y25/00 , G01R33/093 , G11B5/3163 , G11B5/3906 , G11B5/398
摘要： A magnetoresistive sensor having a lead overlay defined trackwidth and a pinned layer that extends beyond the stripe height defined by the free layer of the sensor. The extended pinned layer has a strong shape induced anisotropy that maintains pinning of the pinned layer moment. The extended portion of the pinned layer has sides beyond the stripe height that are perfectly aligned with the sides of the sensor within the stripe height. This perfect alignment is made possible by a manufacturing method that uses a mask structure for more than one manufacturing phase, eliminating the need for multiple mask alignments. The lead overlay design allows narrow, accurate trackwidth definition.
摘要翻译： 磁阻传感器具有引线覆盖层限定的轨道宽度和延伸超过由传感器的自由层限定的条带高度的钉扎层。 延伸的钉扎层具有强烈的形状诱导的各向异性，保持钉扎层力矩的钉扎。 被钉扎层的延伸部分具有超过条带高度的侧面，其在条纹高度内完全与传感器的侧面对准。 通过使用掩模结构用于多于一个制造阶段的制造方法，可以实现这种完美的对准，从而消除了对多个掩模对准的需要。 引线覆盖设计允许窄的，准确的轨道宽度定义。
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6.发明申请Lead overlay based CPP magnetoresistive sensor with exchange biased free layer 有权具有交换偏置自由层的基于覆盖层的CPP磁阻传感器公开(公告)号：US20080037183A1
公开(公告)日：2008-02-14
申请号：US11502955
申请日：2006-08-10
CPC分类号： H01L43/10 , B82Y25/00 , G01R33/093 , G11B5/3906 , G11B5/398
摘要： A current perpendicular to plane (CPP) magnetoresistive sensor having a current path defined by first and second overlying insulation layers between which an electrically conductive lead makes content with a surface of the sensor stack. The current path being narrower than the width of the sensor stack allows the outer edges of the sensor stack to be moved outside of the active area of the sensor. This results in a sensor that is unaffected by damage at outer edges of the sensor layers. The sensor stack includes a free layer that is biased by direct exchange coupling with a layer of antiferromagnetic material (AFM layer). The strength of the exchange field can be controlled by adding Cr to the AFM material to ensure that the exchange field is sufficiently weak to avoid pinning the free layer.
摘要翻译： 一种垂直于平面（CPP）磁阻传感器的电流，其具有由第一和第二上覆绝缘层限定的电流路径，导电引线与传感器堆叠的表面成为内容。 当前路径比传感器堆叠的宽度窄，允许传感器堆叠的外边缘移动到传感器的有效区域之外。 这导致传感器不受传感器层外边缘损坏的影响。 传感器堆叠包括通过与反铁磁材料层（AFM层）的直接交换耦合而偏置的自由层。 可以通过向AFM材料添加Cr来控制交换场的强度，以确保交换场足够弱以避免固定自由层。
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7.发明授权Magnetoresistive sensor having biasing AFM layer in contact with free layer and a track width defined by a lead contact area 有权具有偏置AFM层与自由层接触的磁阻传感器和由引线接触区域限定的轨道宽度公开(公告)号：US07697246B2
公开(公告)日：2010-04-13
申请号：US11502955
申请日：2006-08-10
IPC分类号： G11B5/39
CPC分类号： H01L43/10 , B82Y25/00 , G01R33/093 , G11B5/3906 , G11B5/398
摘要： A current perpendicular to plane (CPP) magnetoresistive sensor having a current path defined by first and second overlying insulation layers between which an electrically conductive lead makes content with a surface of the sensor stack. The current path being narrower than the width of the sensor stack allows the outer edges of the sensor stack to be moved outside of the active area of the sensor. This results in a sensor that is unaffected by damage at outer edges of the sensor layers. The sensor stack includes a free layer that is biased by direct exchange coupling with a layer of antiferromagnetic material (AFM layer). The strength of the exchange field can be controlled by adding Cr to the AFM material to ensure that the exchange field is sufficiently weak to avoid pinning the free layer.
摘要翻译： 一种垂直于平面（CPP）磁阻传感器的电流，其具有由第一和第二上覆绝缘层限定的电流路径，导电引线与传感器堆叠的表面成为内容。 当前路径比传感器堆叠的宽度窄，允许传感器堆叠的外边缘移动到传感器的有效区域之外。 这导致传感器不受传感器层外边缘损坏的影响。 传感器堆叠包括通过与反铁磁材料层（AFM层）的直接交换耦合而偏置的自由层。 可以通过向AFM材料添加Cr来控制交换场的强度，以确保交换场足够弱以避免固定自由层。
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8.发明授权Magnetoresistive sensor having shape enhanced pinning, a flux guide structure and damage free virtual edges 有权具有形状增强钉扎，磁通导向结构和无损虚拟边缘的磁阻传感器公开(公告)号：US07580230B2
公开(公告)日：2009-08-25
申请号：US11588013
申请日：2006-10-24
CPC分类号： G11B5/3932 , B82Y10/00 , B82Y25/00 , G11B5/3163 , G11B2005/3996
摘要： A magnetoresistive sensor having a shape enhanced pinning and a flux guide structure. First and second hard bias layers and lead layers extend from the sides of a sensor stack. The hard bias layers and leads have a stripe height that is smaller than the stripe height of a free layer, resulting in a free layer that extends beyond the back edge of the lead and hard bias layer. This portion of the free layer that extends beyond the back edge of the leads and hard bias layers provides a back flux guide. Similarly, the sensor may have a free layer that extends beyond the front edge of the lead and hard bias layers to provide a front flux guide. The pinned layer extends significantly beyond the back edge of the free layer, providing the pinned layer with a strong shape enhanced magnetic anisotropy.
摘要翻译： 具有形状增强的钉扎和磁通引导结构的磁阻传感器。 第一和第二硬偏压层和引线层从传感器堆叠的侧面延伸。 硬偏压层和引线具有小于自由层的条带高度的条纹高度，导致延伸超过引线和硬偏置层的后边缘的自由层。 自由层的延伸超过引线和硬偏置层的后边缘的部分提供了反向通量引导件。 类似地，传感器可以具有延伸超过引线和硬偏置层的前边缘的自由层，以提供前通量引导件。 被钉扎层明显地延伸超过自由层的后边缘，为钉扎层提供强的形状增强的磁各向异性。
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9.发明申请Magnetoresistive sensor having shape enhanced pinning, a flux guide structure and damage free virtual edges 有权具有形状增强钉扎，磁通导向结构和无损虚拟边缘的磁阻传感器公开(公告)号：US20080094761A1
公开(公告)日：2008-04-24
申请号：US11588013
申请日：2006-10-24
CPC分类号： G11B5/3932 , B82Y10/00 , B82Y25/00 , G11B5/3163 , G11B2005/3996
摘要： A magnetoresistive sensor having a shape enhanced pinning and a flux guide structure. The sensor includes a sensor stack with a pinned layer, spacer layer and pinned layer. First and second hard bias layers and lead layers extend from the sides of the sensor stack. The hard bias layers and leads have a stripe height that is smaller than the stripe height of the free layer, resulting in a free layer that extends beyond the back edge of the lead and hard bias layer. This portion of the free layer that extends beyond the back edge of the leads and hard bias layers provides a back flux guide. Similarly, the sensor may have a free layer that extends beyond the front edge of the lead and hard bias layers to provide a front flux guide. The pinned layer extends significantly beyond the back edge of the free layer, providing the pinned layer with a strong shape enhanced magnetic anisotropy. The sensor may have a lead over layer structure, with the sensor layers extending significantly beyond the inner ends of the leads, thereby moving the outer edges of the sensor layers outside of the track width of the sensor. This eliminates the effect of magnetic damage at the outer edges of the free layer.
摘要翻译： 具有形状增强的钉扎和磁通引导结构的磁阻传感器。 传感器包括具有被钉扎层，间隔层和钉扎层的传感器堆叠。 第一和第二硬偏压层和引线层从传感器堆叠的侧面延伸。 硬偏置层和引线具有小于自由层的条纹高度的条纹高度，导致延伸超过引线和硬偏置层的后边缘的自由层。 自由层的延伸超过引线和硬偏置层的后边缘的部分提供了反向通量引导件。 类似地，传感器可以具有延伸超过引线和硬偏置层的前边缘的自由层，以提供前通量引导件。 被钉扎层明显地延伸超过自由层的后边缘，为钉扎层提供强的形状增强的磁各向异性。 传感器可以具有超导层结构，其中传感器层明显地超过引线的内端，从而将传感器层的外边缘移动到传感器的轨道宽度之外。 这消除了在自由层的外边缘处的磁损伤的影响。
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10.发明授权Current perpendicular to plane magnetoresistive sensor having a shape enhanced pinned layer and an in stack bias structure 失效电流垂直于具有形状增强的钉扎层和堆叠偏置结构的平面磁阻传感器公开(公告)号：US07522391B2
公开(公告)日：2009-04-21
申请号：US11304219
申请日：2005-12-14
IPC分类号： G11B5/39
CPC分类号： G11B5/398 , B82Y25/00 , G01R33/093 , G11B5/3932 , H01L43/08
摘要： A magnetoresistive sensor having an in stack bias structure and a pinned layer having shape enhanced anisotropy. The sensor may be a partial mill design wherein the track width of the sensor is defined by the width of the free layer and the pinned layers extend beyond the trackwidth of the sensor. The sensor has an active area defined by the stripe height of the free layer. The pinned layer extends beyond the stripe height defined by the free layer, thus providing the pinned layer with the shape enhanced anisotropy. The pinned layer structure can be pinned by exchange coupling with a layer of antiferromagnetic material (AFM) layer, with pinning robustness being improved by the shape enhanced anisotropy, or can be a self pinned structure which is pinned by a combination of magnetostriction, AP coupling and shape enhanced anisostropy.
摘要翻译： 具有堆叠偏压结构的磁阻传感器和具有形状增强的各向异性的钉扎层。 传感器可以是部分磨机设计，其中传感器的轨道宽度由自由层的宽度限定，并且被钉扎层延伸超过传感器的轨道宽度。 传感器具有由自由层的条纹高度限定的有效区域。 钉扎层延伸超过由自由层限定的条纹高度，从而为钉扎层提供形状增强的各向异性。 钉扎层结构可以通过与反铁磁性材料（AFM）层的交换耦合来固定，其钉扎鲁棒性通过形状增强的各向异性而改善，或者可以是通过磁致伸缩，AP耦合的组合固定的自固定结构 和形状增强的不确定度。
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