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22 条记录 (耗时 0.026 秒)

    Multi-menisci processing apparatus
    2.
    发明授权
    Multi-menisci processing apparatus 失效
    多功能加工设备

    公开(公告)号：US07464719B2

    公开(公告)日：2008-12-16

    申请号：US11437891

    申请日：2006-05-18

    申请人： James P. Garcia ,  Mike Ravkin ,  Carl Woods ,  Fred C. Redeker ,  John de Larios

    发明人： James P. Garcia ,  Mike Ravkin ,  Carl Woods ,  Fred C. Redeker ,  John de Larios

    IPC分类号： B08B3/00 ,  B08B7/04

    CPC分类号： C25D5/22 ,  B08B3/04 ,  C25D17/001 ,  H01L21/67028 ,  H01L21/67034 ,  H01L21/67051 ,  H01L21/68707 ,  Y10S134/902

    摘要： A substrate preparation apparatus is provided. The apparatus includes a housing configured to be installed in a substrate fabrication facility. The housing includes a manifold for use in preparing a wafer surface. The manifold is configured to include a first process window in a first portion of the manifold. A first fluid meniscus is capable of being defined within the first process windowl. Further included is a second process window in a second portion of the manifold. A second fluid meniscus is capable of being defined within the second process window. An arm is integrated with the housing, and the arm is coupled to the manifold, such that the arm is capable of positioning the manifold in proximity with the substrate during operation. The apparatus therefore provides for the formation of multi-menisci over the surface of a substrate using a single manifold.

    摘要翻译： 提供了基板制备装置。 该装置包括构造成安装在基板制造设备中的壳体。 壳体包括用于制备晶片表面的歧管。 歧管被配置为在歧管的第一部分中包括第一过程窗口。 第一流体弯液面能够在第一过程窗口内被定义。 还包括在歧管的第二部分中的第二处理窗口。 能够在第二过程窗口内限定第二流体弯月面。 臂与壳体一体化，并且臂联接到歧管，使得臂在操作期间能够将歧管定位在基板附近。 因此，该装置提供了使用单个歧管在基板的表面上形成多重半月板。

    System and method for modulating flow through multiple ports in a proximity head
    4.
    发明授权
    System and method for modulating flow through multiple ports in a proximity head 有权
    用于调节流过邻近头部的多个端口的系统和方法

    公开(公告)号：US07143527B2

    公开(公告)日：2006-12-05

    申请号：US11273853

    申请日：2005-11-14

    申请人： James P. Garcia ,  Fred C. Redeker ,  John de Larios

    发明人： James P. Garcia ,  Fred C. Redeker ,  John de Larios

    IPC分类号： F26B21/10

    CPC分类号： H01L21/67051 ,  H01L21/67034 ,  Y10S134/902

    摘要： A method of forming a dynamic liquid meniscus includes forming a meniscus at a first size, the meniscus being formed between a proximity head and a first surface and changing the meniscus to a second size by modulating a flow through at least one of a set of ports on the proximity head. A system for modulating flow through the ports in a proximity head is also described.

    摘要翻译： 形成动态液体弯液面的方法包括：以第一尺寸形成弯液面，所述弯液面形成在邻近头部和第一表面之间，并且通过调制通过一组端口中的至少一个的流动将所述弯月面改变为第二尺寸 在接近头上。 还描述了用于调制在邻近头部中的端口的流动的系统。

    Meniscus, vacuum, IPA vapor, drying manifold
    8.
    发明授权
    Meniscus, vacuum, IPA vapor, drying manifold 失效
    半月板，真空，IPA蒸气，干燥歧管

    公开(公告)号：US07383844B2

    公开(公告)日：2008-06-10

    申请号：US11542700

    申请日：2006-10-03

    申请人： Carl Woods ,  James P. Garcia ,  John de Larios

    发明人： Carl Woods ,  James P. Garcia ,  John de Larios

    IPC分类号： B08B3/00

    CPC分类号： H01L21/67051 ,  C25D5/22 ,  C25D17/001 ,  H01L21/02041 ,  H01L21/02052 ,  H01L21/67028 ,  H01L21/67034 ,  H01L21/67046 ,  Y10S134/902

    摘要： A head is provided which includes a first surface of the head capable of being in close proximity to the wafer surface, and includes a first conduit region on the head where the first conduit region is defined for delivery of a first fluid to wafer of the surface and the first conduit region is defined in a center portion of the head. The head further includes a second conduit region on the head which surrounds the first conduit region, and includes a third conduit region on the head which is defined for delivery of a second fluid to the wafer surface. The third conduit region semi-encloses the first conduit region and the second conduit region. The second conduit region enables a removal of the first fluid and the second fluid. The delivery of the first fluid and the second fluid combined with the removal by the third conduit region of the head defines a controllable meniscus.

    摘要翻译： 提供了一种头部，其包括能够靠近晶片表面的头部的第一表面，并且包括头部上的第一导管区域，其中限定第一导管区域以将第一流体输送到表面的晶片 并且第一管道区域被限定在头部的中心部分中。 头部还包括头部上的第二管道区域，其围绕第一管道区域，并且包括头部上的第三管道区域，其被限定用于将第二流体输送到晶片表面。 第三管道区域半封闭第一管道区域和第二管道区域。 第二管道区域能够移除第一流体和第二流体。 第一流体和第二流体的输送与头部的第三导管区域的移除相结合，限定了可控弯液面。

    Meniscus, vacuum, IPA vapor, drying manifold
    9.
    发明授权
    Meniscus, vacuum, IPA vapor, drying manifold 有权

    公开(公告)号：US07198055B2

    公开(公告)日：2007-04-03

    申请号：US10330843

    申请日：2002-12-24

    申请人： Carl Woods ,  James P. Garcia ,  John de Larios

    发明人： Carl Woods ,  James P. Garcia ,  John de Larios

    IPC分类号： B08B3/04

    CPC分类号： H01L21/67051 ,  C25D5/22 ,  C25D17/001 ,  H01L21/02041 ,  H01L21/02052 ,  H01L21/67028 ,  H01L21/67034 ,  H01L21/67046 ,  Y10S134/902

    摘要： A head is provided which includes a first surface of the head capable of being in close proximity to the wafer surface, and includes a first conduit region on the head where the first conduit region is defined for delivery of a first fluid to wafer of the surface and the first conduit region is defined in a center portion of the head. The head further includes a second conduit region on the head which surrounds the first conduit region, and includes a third conduit region on the head which is defined for delivery of a second fluid to the wafer surface. The third conduit region semi-encloses the first conduit region and the second conduit region. The second conduit region enables a removal of the first fluid and the second fluid. The delivery of the first fluid and the second fluid combined with the removal by the third conduit region of the head defines a controllable meniscus.

    Meniscus proximity system for cleaning semiconductor substrate surfaces
    10.
    发明授权
    Meniscus proximity system for cleaning semiconductor substrate surfaces 有权
    用于清洁半导体衬底表面的半月板接近系统

    公开(公告)号：US07350316B2

    公开(公告)日：2008-04-01

    申请号：US11619599

    申请日：2007-01-03

    申请人： Carl Woods ,  James P. Garcia ,  John de Larios

    发明人： Carl Woods ,  James P. Garcia ,  John de Larios

    IPC分类号： B08B3/00 ,  F26B5/12

    CPC分类号： H01L21/67051 ,  C25D5/22 ,  C25D17/001 ,  H01L21/02041 ,  H01L21/02052 ,  H01L21/67028 ,  H01L21/67034 ,  H01L21/67046 ,  Y10S134/902

    摘要： A system and apparatus for cleaning a substrate is provided. The system includes a first head configured as a bar shape that extends approximately a diameter of the substrate. The first head is configured for placement on a first side of the substrate. A second head is also provided, and is configured as a bar shape that extends approximately the diameter of the wafer, and the second head is configured for placement on a second side of the substrate, such that the second side is opposite the first side. In this example, each of the first head and the second head have conduits formed therein along the diameter of the substrate for delivering and removing fluids so that a meniscus is capable of being contained between each of the first head and a substrate surface of the first side of the substrate and the second head and a substrate surface of the second side of the substrate.

    摘要翻译： 提供了一种清洁基板的系统和装置。 该系统包括构造为棒状的第一头部，其大致延伸到基底的直径。 第一头被配置为放置在基底的第一侧上。 还提供了第二头，并且被配置为大致延伸晶片的直径的棒状，并且第二头构造成用于放置在衬底的第二侧上，使得第二侧与第一侧相对。 在该示例中，第一头部和第二头部中的每一个具有沿着基底的直径形成在其中的导管，用于输送和移除流体，使得弯液面能够容纳在第一头部和第一头部的基底表面之间 基板和第二头部的一侧以及基板的第二侧的基板表面。