-
公开(公告)号：US6128214A
公开(公告)日：2000-10-03
申请号：US280189
申请日：1999-03-29
CPC分类号： G11C13/025 , B82Y10/00 , G11C11/14 , G11C13/0009 , G11C2213/77 , G11C2213/81 , H01L27/28 , H01L51/0595 , Y10S977/943
摘要： A molecular wire crossbar memory (MWCM) system is provided. The MWCM comprises a two-dimensional array of a plurality of nanometer-scale devices, each device comprising a junction formed by a pair of crossed wires where one wire crosses another and at least one connector species connecting the pair of crossed wires in the junction. The connector species comprises a bi-stable molecular switch. The junction forms either a resistor or a diode or an asymmetric non-linear resistor. The junction has a state that is capable of being altered by application of a first voltage and sensed by application of a second, non-destructive voltage.
摘要翻译： 提供分子线交叉存储器（MWCM）系统。 MWCM包括多个纳米级装置的二维阵列，每个装置包括由一对交叉导线形成的连接点，其中一根线交叉另一条线和连接该交叉线中的该对交叉线的至少一个连接器种类。 连接器种类包括双稳态分子开关。 该结形成电阻器或二极管或非对称非线性电阻器。 连接点具有能够通过施加第一电压并被施加第二非破坏性电压而被改变的状态。
-
公开(公告)号：US06846682B2
公开(公告)日：2005-01-25
申请号：US09907314
申请日：2001-07-17
IPC分类号： B81B7/04 , B82B1/00 , G01R31/28 , G11C13/02 , H01L21/00 , H01L23/532 , H01L27/10 , H01L29/861 , H01L51/00 , H01L51/05 , H01L51/30 , H01L51/40
CPC分类号： H01L27/10 , B82B1/00 , B82Y10/00 , B82Y30/00 , G11C13/0009 , G11C13/0014 , G11C13/02 , G11C2213/72 , G11C2213/77 , G11C2213/81 , H01L51/0595 , Y10S977/704 , Y10S977/705 , Y10S977/936
摘要： A route to the fabrication of electronic devices is provided, in which the devices consist of two crossed wires sandwiching an electrically addressable molecular species. The approach is extremely simple and inexpensive to implement, and scales from wire dimensions of several micrometers down to nanometer-scale dimensions. The device of the present invention can be used to produce crossbar switch arrays, logic devices, memory devices, and communication and signal routing devices. The present invention enables construction of molecular electronic devices on a length scale than can range from micrometers to nanometers via a straightforward and inexpensive chemical assembly procedure. The device is either partially or completely chemically assembled, and the key to the scaling is that the location of the devices on the substrate are defined once the devices have been assembled, not prior to assembly.
-
公开(公告)号：US06903366B2
公开(公告)日：2005-06-07
申请号：US10699172
申请日：2003-10-31
IPC分类号： B81B7/04 , B82B1/00 , G01R31/28 , G11C13/02 , H01L21/00 , H01L23/532 , H01L27/10 , H01L29/861 , H01L51/00 , H01L51/05 , H01L51/30 , H01L51/40 , H01L29/06
CPC分类号： H01L27/10 , B82B1/00 , B82Y10/00 , B82Y30/00 , G11C13/0009 , G11C13/0014 , G11C13/02 , G11C2213/72 , G11C2213/77 , G11C2213/81 , H01L51/0595 , Y10S977/704 , Y10S977/705 , Y10S977/936
摘要： A route to the fabrication of electronic devices is provided, in which the devices consist of two crossed wires sandwiching an electrically addressable molecular species. The approach is extremely simple and inexpensive to implement, and scales from wire dimensions of several micrometers down to nanometer-scale dimensions. The device of the present invention can be used to produce crossbar switch arrays, logic devices, memory devices, and communication and signal routing devices. The present invention enables construction of molecular electronic devices on a length scale than can range from micrometers to nanometers via a straightforward and inexpensive chemical assembly procedure. The device is either partially or completely chemically assembled, and the key to the scaling is that the location of the devices on the substrate are defined once the devices have been assembled, not prior to assembly.
摘要翻译： 提供了制造电子器件的途径，其中器件由夹着电可寻址分子种类的两条交叉导线组成。 该方法实现起来非常简单和便宜，并且从几微米的线尺寸缩小到纳米级尺寸。 本发明的装置可用于产生交叉开关阵列，逻辑器件，存储器件以及通信和信号路由器件。 本发明能够通过直接且廉价的化学组装程序在长度尺度上构建分子电子器件，其尺寸范围可以从微米到纳米。 该装置部分或完全化学地组装，并且缩放的关键在于，一旦装置组装而不是装配之前，基板上的装置的位置被定义。
-
公开(公告)号：US06459095B1
公开(公告)日：2002-10-01
申请号：US09282048
申请日：1999-03-29
IPC分类号： H01L2906
CPC分类号： H01L27/10 , B82B1/00 , B82Y10/00 , B82Y30/00 , G11C13/0009 , G11C13/0014 , G11C13/02 , G11C2213/72 , G11C2213/77 , G11C2213/81 , H01L51/0595 , Y10S977/704 , Y10S977/705 , Y10S977/936
摘要： A route to the fabrication of electronic devices is provided, in which the devices consist of two crossed wires sandwiching an electrically addressable molecular species. The approach is extremely simple and inexpensive to implement, and scales from wire dimensions of several micrometers down to nanometer-scale dimensions. The device of the present invention can be used to produce crossbar switch arrays, logic devices, memory devices, and communication and signal routing devices. The present invention enables construction of molecular electronic devices on a length scale than can range from micrometers to nanometers via a straightforward and inexpensive chemical assembly procedure. The device is either partially or completely chemically assembled, and the key to the scaling is that the location of the devices on the substrate are defined once the devices have been assembled, not prior to assembly.
摘要翻译： 提供了制造电子器件的途径，其中器件由夹着电可寻址分子种类的两条交叉导线组成。 该方法实现起来非常简单和便宜，并且从几微米的线尺寸缩小到纳米级尺寸。 本发明的装置可用于产生交叉开关阵列，逻辑器件，存储器件以及通信和信号路由器件。 本发明能够通过直接且廉价的化学组装程序在比例范围从微米到纳米的范围内构建分子电子器件。 该装置部分或完全化学地组装，并且缩放的关键在于，一旦装置组装而不是装配之前，基板上的装置的位置被定义。
-
5.发明授权Molecular-wire crossbar interconnect (MWCI) for signal routing and communications 失效用于信号路由和通信的分子线交叉互连（MWCI）公开(公告)号：US06314019B1
公开(公告)日：2001-11-06
申请号：US09280225
申请日：1999-03-29
IPC分类号： G11C1100
CPC分类号： G11C13/025 , B82Y10/00 , G11C13/0009 , G11C2213/34 , G11C2213/77 , G11C2213/81 , Y10S977/708 , Y10S977/762 , Y10S977/765 , Y10S977/936
摘要： A molecular-wire crossbar interconnect for signal routing and communications between a first level and a second level in a molecular-wire crossbar is provided. The molecular wire crossbar comprises a two-dimensional array of a plurality of nanometer-scale switches. Each switch is reconfigurable and self-assembling and comprises a pair of crossed wires which form a junction where one wire crosses another and at least one connector species connecting the pair of crossed wires in the junction. The connector species comprises a bi-stable molecule. Each level comprises at least one group of switches and each group of switches comprises at least one switch, with each group in the first level connected to all other groups in the second level in an all-to-all configuration to provide a scalable, defect-tolerant, fat-tree networking scheme. The primary advantage is ease of fabrication, because an active switch is formed any time two wires cross. This saves tremendously on circuit area (a factor of a few times ten), since no other wires or ancillary devices are needed to operate the switch or store the required configuration. This reduction of the area of a configuration bit and its switch to just the area of two crossing wires is a major advantage in constructing a defect-tolerant interconnect network.
摘要翻译： 提供了用于分子线交叉开关中的信号路由和第一级和第二级之间的通信的分子线交叉开关互连。 分子线交叉杆包括多个纳米级开关的二维阵列。 每个开关是可重构和自组装的，并且包括一对交叉线，其形成一条线与另一条线交叉的连接处，以及至少一个在连接处连接一对交叉线的连接器种类。 连接器种类包括双稳态分子。 每个级别包括至少一组交换机，并且每组交换机包括至少一个交换机，其中第一级别中的每个组以全对齐配置连接到第二级别中的所有其他组，以提供可扩展的缺陷 不容忍，胖树联网方案。 主要优点是易于制造，因为在任何时候两根线交叉时形成有源开关。 由于不需要其他电线或辅助设备来操作交换机或存储所需的配置，因此可大大节省电路面积（十倍）。 配置位区域的这种减少及其切换到两条交叉电线的区域是构建容错互连网络的主要优点。
-
公开(公告)号：US09323217B2
公开(公告)日：2016-04-26
申请号：US13142484
申请日：2008-12-29
申请人： Shih-Yuan Wang , Alexandre M. Bratkovski , R. Stanley Williams , Jingjing Li , Wei Wu , Philip J. Kuekes
发明人： Shih-Yuan Wang , Alexandre M. Bratkovski , R. Stanley Williams , Jingjing Li , Wei Wu , Philip J. Kuekes
CPC分类号： G03H1/02 , G02B1/007 , G03H1/2249 , G03H1/2294 , G03H2001/0224 , G03H2210/30 , G03H2225/22 , G03H2225/32 , G03H2225/33
摘要： A negative index material (or metamaterial) crossbar includes a first layer of approximately parallel nanowires and a second layer of approximately parallel nanowires that overlay the nanowires in the first layer. The nanowires in the first layer are approximately perpendicular in orientation to the nanowires in the second layer. Each nanowire of the first layer and each nanowire of the second layer has substantially regularly spaced fingers. The crossbar further includes resonant elements at nanowire intersections between the respective layers. Each resonant element includes two fingers of a nanowire in the first layer and two fingers of a nanowire in the second layer.
摘要翻译： 负指数材料（或超材料）横杆包括大致平行的纳米线的第一层和覆盖第一层中的纳米线的大致平行的纳米线的第二层。 第一层中的纳米线在第二层中与纳米线的取向近似垂直。 第一层的每个纳米线和第二层的每个纳米线具有基本上规则间隔的指状物。 横杆还包括在各层之间的纳米线交叉处的共振元件。 每个谐振元件包括第一层中的纳米线的两个指状物和第二层中的纳米线的两个指状物。
-
公开(公告)号：US08447146B2
公开(公告)日：2013-05-21
申请号：US12008605
申请日：2008-01-11
申请人： Raymond G. Beausoleil , Philip J. Kuekes , William J. Munro , Timothy P. Spiller , R. Stanley Williams , Sean D. Barrett
发明人： Raymond G. Beausoleil , Philip J. Kuekes , William J. Munro , Timothy P. Spiller , R. Stanley Williams , Sean D. Barrett
IPC分类号： G02B6/12
CPC分类号： G02F1/01 , B82Y20/00 , G02B6/12007 , G02B6/1225 , G02B6/43 , G02F2202/32 , G02F2203/585 , H04B10/801
摘要： A photonic interconnect method avoids high capacitance electric interconnects by using optical signals to communicate data between devices. The method can provide massively parallel information output by mapping logical addresses to frequency bands, so that modulation of a selected frequency band can encode information for a specific location corresponding to the logical address. Wavelength-specific directional couplers, modulators, and detectors, which can be fabricated at defects in a photonic bandgap crystal, can be employed for the photonic interconnect method. The interconnect method can be used for both classical and quantum information processing.
摘要翻译： 光子互连方法通过使用光信号在设备之间传送数据来避免高电容电互连。 该方法可以通过将逻辑地址映射到频带来提供大量并行信息输出，使得所选频带的调制可以对与逻辑地址相对应的特定位置的信息进行编码。 可以在光子互连方法中使用可在光子带隙晶体的缺陷处制造的波长特异性定向耦合器，调制器和检测器。 互连方法可用于经典和量子信息处理。
-
公开(公告)号：US08121807B2
公开(公告)日：2012-02-21
申请号：US12288021
申请日：2008-10-15
IPC分类号： G01R27/28
CPC分类号： G01R31/317
摘要： Embodiments of the present invention are directed to cost-effective defect amelioration in manufactured electronic devices that include nanoscale components. Certain embodiments of the present invention are directed to amelioration of defects in electronic devices that contain nanoscale demultiplexers. In certain embodiments of the present invention, the nanoscale-demultiplexer-containing devices include reconfigurable encoders. In one embodiment of the present invention, the table of codes within a reconfigurable encoder is permuted, and a device is configured in accordance with the permuted codes, in order to produce a permuted table of codes that, when input to an appropriately configured nanoscale demultiplexer, produces correct outputs despite defects in the nanoscale demultiplexer.
摘要翻译： 本发明的实施例涉及在包括纳米级组件的制造的电子设备中的经济有效的缺陷改善。 本发明的某些实施例涉及改善包含纳米级解复用器的电子设备中的缺陷。 在本发明的某些实施例中，含纳米级解复用器的装置包括可重构编码器。 在本发明的一个实施例中，可重构编码器内的代码表被置换，并且根据置换代码配置器件，以便产生置换的代码表，当输入到适当配置的纳米级解复用器 ，尽管纳米级解复用器中存在缺陷，但仍能产生正确的输出。
-
公开(公告)号：US08112700B2
公开(公告)日：2012-02-07
申请号：US12011175
申请日：2008-01-23
IPC分类号： G11C29/00
CPC分类号： G11C13/0023 , B82Y10/00 , G06F11/1016 , G11C8/10 , G11C11/54 , G11C13/0002 , G11C2213/77 , G11C2213/81
摘要： One embodiment of the present invention provides a demultiplexer implemented as a nanowire crossbar or a hybrid nanowire/microscale-signal-line crossbar with resistor-like nanowire junctions. The demultiplexer of one embodiment provides demultiplexing of signals input on k microscale address lines to 2k or fewer nanowires, employing supplemental, internal address lines to map 2k nanowire addresses to a larger, internal, n-bit address space, where n>k. A second demultiplexer embodiment of the present invention provides demultiplexing of signals input on n microscale address lines to 2k nanowires, with n>k, using 2k, well-distributed, n-bit external addresses to access the 2k nanowires. Additional embodiments of the present invention include a method for evaluating different mappings of nanowire addresses to internal address-spaces of different sizes, or to evaluate mappings of nanowires to external address-spaces of different sizes, metrics for evaluating address mapping and demultiplexer designs, and demultiplexer design methods.
摘要翻译： 本发明的一个实施例提供了一种解复用器，其实现为纳米线交叉开关或具有电阻器状纳米线结的混合纳米线/微型信号线交叉开关。 一个实施例的解复用器提供在k个微米地址线上输入的信号到2k个或更少的纳米线的解复用，采用补充的内部地址线将2k个纳米线地址映射到更大的内部n位地址空间，其中n> k。 本发明的第二解复用器实施例使用2k，均匀分布的n位外部地址来访问2k纳米线，在n个微米级地址线上输入的信号到2k纳米线解复用n> k。 本发明的另外的实施例包括用于评估纳米线地址与不同大小的内部地址空间的不同映射的方法，或者评估纳米线与不同大小的外部地址空间的映射，用于评估地址映射和解复用器设计的度量，以及 解复用器设计方法。
-
公开(公告)号：US20110273755A1
公开(公告)日：2011-11-10
申请号：US13142484
申请日：2008-12-29
申请人： Shih-Yuan Wang , Alexandre M. Bratkovski , R. Stanley Williams , Jingjing Li , Wei Wu , Philip J. Kuekes
发明人： Shih-Yuan Wang , Alexandre M. Bratkovski , R. Stanley Williams , Jingjing Li , Wei Wu , Philip J. Kuekes
CPC分类号： G03H1/02 , G02B1/007 , G03H1/2249 , G03H1/2294 , G03H2001/0224 , G03H2210/30 , G03H2225/22 , G03H2225/32 , G03H2225/33
摘要： Various embodiments of the present invention relate to systems that can be used as holograms and can be electronically controlled and dynamically reconfigured to generate three-dimensional motion picture images. In one embodiment, a dynamically reconfigurable hologram (1200) comprises a phase-control layer (1202) including a two-dimensional array of phase-modulation pixels (1212). The hologram also comprises an intensity-control layer (1204) including a two-dimensional array of intensity-control pixels (1214). One or more three-dimensional motion pictures can be produced by electronically addressing the individual phase-modulation pixels and intensity-control pixels in order to phase and control the intensity of light emanating from pixels of the hologram.
摘要翻译： 本发明的各种实施例涉及可以用作全息图并且可以被电子控制和动态重新配置以产生三维运动图像图像的系统。 在一个实施例中，动态可重构全息图（1200）包括包括相位调制像素的二维阵列（1212）的相位控制层（1202）。 全息图还包括包括强度控制像素（1214）的二维阵列的强度控制层（1204）。 可以通过电子地寻址各个相位调制像素和强度控制像素来产生一个或多个三维运动图像，以便相位和控制从全息图像素发出的光的强度。
-
-
-
-
-
-
-
-
-
搜索结果
320 条记录 (耗时 0.03 秒)