-
公开(公告)号：US08518162B2
公开(公告)日：2013-08-27
申请号：US11990255
申请日：2006-07-27
IPC分类号： B01D53/00
CPC分类号： H01J37/32844 , H01J37/32192 , H01J37/32229 , Y02C20/30
摘要： A method is described for treating gas exhaust from a polysilicon etch process, which uses a plasma abatement device to treat the gas. The device comprises a stainless steel gas chamber having a gas inlet for receiving the gas and a gas outlet. As the gas may contain a halocompound and water vapor, the chamber is heated to a temperature that inhibits adsorption of water on the surface within the chamber, thereby inhibiting corrosion of the gas chamber. The gas is then conveyed to the gas chamber for treatment, and the temperature of the chamber is maintained above said temperature during treatment of the gas.
摘要翻译： 描述了一种用于处理来自多晶硅蚀刻工艺的排气的方法，其使用等离子体消除装置来处理气体。 该装置包括具有用于接收气体的气体入口和气体出口的不锈钢气室。 由于气体可能含有卤化合物和水蒸气，所以将该室加热到抑制室内表面上的水吸附的温度，从而抑制气室的腐蚀。 然后将气体输送到气室用于处理，并且在处理气体期间将室的温度保持在所述温度以上。
-
公开(公告)号：US20110197759A1
公开(公告)日：2011-08-18
申请号：US11990255
申请日：2006-07-27
IPC分类号： B03C3/34
CPC分类号： H01J37/32844 , H01J37/32192 , H01J37/32229 , Y02C20/30
摘要： A method is described for treating gas exhaust from a polysilicon etch process, which uses a plasma abatement device to treat the gas. The device comprises a stainless steel gas chamber having a gas inlet for receiving the gas and a gas outlet. As the gas may contain a halocompound and water vapour, the chamber is heated to a temperature that inhibits adsorption of water on the surface within the chamber, thereby inhibiting corrosion of the gas chamber. The gas is then conveyed to the gas chamber for treatment, and the temperature of the chamber is maintained above said temperature during treatment of the gas.
摘要翻译： 描述了一种用于处理来自多晶硅蚀刻工艺的排气的方法，其使用等离子体消除装置来处理气体。 该装置包括具有用于接收气体的气体入口和气体出口的不锈钢气室。 由于气体可能含有卤化合物和水蒸气，所以将该室加热到抑制室内表面上的水吸附的温度，从而抑制气室的腐蚀。 然后将气体输送到气室进行处理，并且在处理气体期间将室的温度保持在所述温度以上。
-
公开(公告)号：US07833503B2
公开(公告)日：2010-11-16
申请号：US10509398
申请日：2003-03-27
IPC分类号： B01D53/14
摘要： A method for scrubbing a halogen-containing gas, comprises contacting the halogen-containing gas with water at a temperature of at least 30° C., the gas optionally subsequently being subjected to a further treatment step comprising contacting it with water at a temperature of less than 30° C. and/or a gas dilution step. An apparatus for carrying out the method comprises a hot wash chamber (6) and optionally a cold wash chamber (7) and/or a gas dilution device (13).
摘要翻译： 一种用于洗涤含卤素气体的方法，包括在至少30℃的温度下使含卤素的气体与水接触，所述气体任选地随后进行进一步的处理步骤，包括使其与水接触，温度为 小于30℃和/或气体稀释步骤。 用于执行该方法的装置包括热洗室（6）和任选的冷洗室（7）和/或气体稀释装置（13）。
-
公开(公告)号：US08455261B2
公开(公告)日：2013-06-04
申请号：US12937358
申请日：2009-03-24
IPC分类号： G01N33/00
CPC分类号： G01N33/0052 , Y10T436/19 , Y10T436/21 , Y10T436/214 , Y10T436/24 , Y10T436/25875
摘要： A method of measuring the concentration of a halogen in a gas stream using measurement means unsuitable for the direct measurement of halogens in a gas stream includes the step of passing a gaseous conversion compound to the halogen containing gas stream to convert the halogen to a detectable gaseous compound.
摘要翻译： 使用不适于直接测量气流中的卤素的测量装置测量气流中卤素浓度的方法包括将气态转化化合物通入含卤素气流的步骤，以将卤素转化为可检测气体 复合。
-
公开(公告)号：US20110171743A1
公开(公告)日：2011-07-14
申请号：US12937358
申请日：2009-03-24
IPC分类号： G01N33/00
CPC分类号： G01N33/0052 , Y10T436/19 , Y10T436/21 , Y10T436/214 , Y10T436/24 , Y10T436/25875
摘要： A method of measuring the concentration of a halogen in a gas stream using measurement means unsuitable for the direct measurement of halogens in a gas stream, comprising the step of passing a gaseous conversion compound to the halogen containing gas stream to convert the halogen to a detectable gaseous compound.
摘要翻译： 使用不适于直接测量气流中的卤素的测量装置测量气流中卤素浓度的方法，其包括将气态转化化合物通入含卤素气流以将卤素转化成可检测的步骤 气态化合物。
-
公开(公告)号：US06358485B1
公开(公告)日：2002-03-19
申请号：US09596128
申请日：2000-06-16
申请人： Derek Martin Baker
发明人： Derek Martin Baker
IPC分类号： C07C1124
CPC分类号： B01D53/8668
摘要： A process for the abatement of trimethylvinylsilane (TMVS) by contacting a gas stream containing TMVS with copper(II) oxide (CuO) and/or manganese oxide (MnO2) in the presence of sufficient oxygen to prevent reduction of the oxides and at a temperature of at least room temperature, but preferably, at an elevated temperature greater than 100° C.
摘要翻译： 通过在足够的氧气存在下使包含TMVS的气流与氧化铜（II）（CuO）和/或氧化锰（MnO 2）接触来减少三甲基乙烯基硅烷（TMVS）的方法，以防止氧化物的还原和温度 至少室温，但优选在高于100℃的高温下。
-
-
-
-
-
搜索结果
6 条记录 (耗时 0.02 秒)