Self-dicing chips using through silicon vias
    8.
    发明授权
    Self-dicing chips using through silicon vias 失效
    通过硅通孔的自切割芯片

    公开(公告)号:US08168474B1

    公开(公告)日:2012-05-01

    申请号:US12987402

    申请日:2011-01-10

    IPC分类号: H01L21/00

    CPC分类号: H01L21/78 H01L21/76898

    摘要: Systems and methods simultaneously form first openings and second openings in a substrate. The first openings are formed smaller than the second openings. The method also simultaneously forms a first material in the first openings and the second openings. The first material fills the first openings, and the first material lines the second openings. The method forms a second material different than the first material in the second openings. The second material fills the second openings. The method forms a plurality of integrated circuit structures over the first material and the second material within the second openings. The method applies mechanical stress to the substrate to cause the substrate to split along the first openings.

    摘要翻译: 系统和方法同时在衬底中形成第一开口和第二开口。 第一开口形成为小于第二开口。 该方法还同时在第一开口和第二开口中形成第一材料。 第一材料填充第一开口,第一材料将第二开口排列。 该方法形成与第二开口中的第一材料不同的第二材料。 第二材料填充第二开口。 该方法在第二开口内的第一材料和第二材料上形成多个集成电路结构。 该方法对基板施加机械应力以使基板沿着第一开口分开。