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    FLOW CONTROL FEATURES OF CVD CHAMBERS
    4.
    发明申请
    FLOW CONTROL FEATURES OF CVD CHAMBERS 有权
    CVD气泡流量控制特征

    公开(公告)号：US20110011338A1

    公开(公告)日：2011-01-20

    申请号：US12836726

    申请日：2010-07-15

    申请人： Kien N. Chuc ,  Qiwei Liang ,  Hanh D. Nguyen ,  Xinglong Chen ,  Matthew Miller ,  Soonam Park ,  Toan Q. Tran ,  Adib Khan ,  Jang-Gyoo Yang ,  Dmitry Lubomirsky ,  Shankar Venkataraman

    发明人： Kien N. Chuc ,  Qiwei Liang ,  Hanh D. Nguyen ,  Xinglong Chen ,  Matthew Miller ,  Soonam Park ,  Toan Q. Tran ,  Adib Khan ,  Jang-Gyoo Yang ,  Dmitry Lubomirsky ,  Shankar Venkataraman

    IPC分类号： C23C16/00

    CPC分类号： C23C16/45565 ,  C23C16/452 ,  C23C16/45574 ,  H01J37/3244 ,  H01J37/32449 ,  Y10T137/85938

    摘要： Apparatus and methods for gas distribution assemblies are provided. In one aspect, a gas distribution assembly is provided comprising an annular body comprising an annular ring having an inner annular wall, an outer wall, an upper surface, and a bottom surface, an upper recess formed into the upper surface, and a seat formed into the inner annular wall, an upper plate positioned in the upper recess, comprising a disk-shaped body having a plurality of first apertures formed therethrough, and a bottom plate positioned on the seat, comprising a disk-shaped body having a plurality of second apertures formed therethrough which align with the first apertures, and a plurality of third apertures formed between the second apertures and through the bottom plate, the bottom plate sealingly coupled to the upper plate to fluidly isolate the plurality of first and second apertures from the plurality of third apertures.

    摘要翻译： 提供了用于气体分配组件的装置和方法。 一方面，提供了一种气体分配组件，包括环形体，该环形体包括具有内环形壁，外壁，上表面和底表面的环形环，形成在上表面中的上凹部，以及形成 位于所述内部环形壁中的位于所述上部凹部中的上板，包括具有穿过其形成的多个第一孔的盘状体和位于所述座上的底板，所述底板包括具有多个第二孔的盘状体 通过其形成的孔与第一孔对准，以及形成在第二孔之间并穿过底板的多个第三孔，底板密封地联接到上板，以将多个第一和第二孔与多个 第三孔。

    FLOWABLE DIELECTRIC EQUIPMENT AND PROCESSES
    8.
    发明申请
    FLOWABLE DIELECTRIC EQUIPMENT AND PROCESSES 审中-公开
    流动电介质设备和工艺

    公开(公告)号：US20090277587A1

    公开(公告)日：2009-11-12

    申请号：US12210940

    申请日：2008-09-15

    申请人： Dmitry Lubomirsky ,  Qiwei Liang ,  Jang Gyoo Yang

    发明人： Dmitry Lubomirsky ,  Qiwei Liang ,  Jang Gyoo Yang

    IPC分类号： H01L21/3065 ,  H01L21/306

    CPC分类号： C23C16/45565 ,  C23C16/4405 ,  C23C16/452 ,  C23C16/45574 ,  C23C16/507 ,  H01J37/32082 ,  H01J37/32357 ,  H01J37/3244

    摘要： Substrate processing systems are described that may include a processing chamber having an interior capable of holding an internal chamber pressure different from an external chamber pressure. The systems may also include a remote plasma system operable to generate a plasma outside the interior of the processing chamber. In addition, the systems may include a first process gas channel operable to transport a first process gas from the remote plasma system to the interior of the processing chamber, and a second process gas channel operable to transport a second process gas that is not treated by the remote plasma system. The second process gas channel has a distal end that opens into the interior of the processing chamber, and that is at least partially surrounded by the first process gas channel.

    摘要翻译： 描述了可以包括具有能够保持不同于外部室压力的内部室压力的内部的处理室的基板处理系统。 该系统还可以包括可操作以在处理室内部产生等离子体的远程等离子体系统。 此外，系统可以包括可操作以将第一处理气体从远程等离子体系统输送到处理室的内部的第一处理气体通道，以及可操作以输送未被处理室处理的第二处理气体的第二处理气体通道 远程等离子体系统。 第二工艺气体通道具有通向处理室内部的远端，并且至少部分地被第一工艺气体通道包围。

    Flowable dielectric equipment and processes
    9.
    发明授权
    Flowable dielectric equipment and processes 有权
    可流动介质设备和工艺

    公开(公告)号：US08357435B2

    公开(公告)日：2013-01-22

    申请号：US12210982

    申请日：2008-09-15

    申请人： Dmitry Lubomirsky ,  Qiwei Liang ,  Jang Gyoo Yang

    发明人： Dmitry Lubomirsky ,  Qiwei Liang ,  Jang Gyoo Yang

    IPC分类号： H05H1/24 ,  C23C16/00

    CPC分类号： B08B7/00 ,  C23C16/4405 ,  C23C16/452 ,  C23C16/45514 ,  C23C16/509 ,  H01J37/32449

    摘要： Methods of depositing and curing a dielectric material on a substrate are described. The methods may include the steps of providing a processing chamber partitioned into a first plasma region and a second plasma region, and delivering the substrate to the processing chamber, where the substrate occupies a portion of the second plasma region. The methods may further include forming a first plasma in the first plasma region, where the first plasma does not directly contact with the substrate, and depositing the dielectric material on the substrate to form a dielectric layer. One or more reactants excited by the first plasma are used in the deposition of the dielectric material. The methods may additional include curing the dielectric layer by forming a second plasma in the second plasma region, where one or more carbon-containing species is removed from the dielectric layer.

    摘要翻译： 描述了在衬底上沉积和固化电介质材料的方法。 该方法可以包括以下步骤：提供分隔成第一等离子体区域和第二等离子体区域的处理室，以及将衬底输送到处理室，其中衬底占据第二等离子体区域的一部分。 所述方法可以进一步包括在第一等离子体区域中形成第一等离子体，其中第一等离子体不直接与衬底接触，并将电介质材料沉积在衬底上以形成电介质层。 在电介质材料的沉积中使用由第一等离子体激发的一种或多种反应物。 所述方法可以包括通过在第二等离子体区域中形成第二等离子体来固化介电层，其中从电介质层去除一个或多个含碳物质。