公开(公告)号：US5635037A

公开(公告)日：1997-06-03

申请号：US101456

申请日：1993-08-02

申请人： Jau-Jier Chu ,  Chung-Yu Ting ,  Oliver J. Horng ,  Jye-Yen Cheng ,  Charles C. Lin ,  Mei-Rurng Tseng

发明人： Jau-Jier Chu ,  Chung-Yu Ting ,  Oliver J. Horng ,  Jye-Yen Cheng ,  Charles C. Lin ,  Mei-Rurng Tseng

IPC分类号： G11B5/84 ,  C23C14/00

CPC分类号： G11B5/8404 ,  G11B5/8408

摘要： A magnetic recording medium controllably textured by performing sputter etching or reactive ion etching either on the surface of a smooth substrate, which can be nickel-phosphorous/aluminum-magnesium (Al--Mg) substrate, or on the surface of a protective layer, such as a carbon overcoat. Both types of etching processes described above are carried out in a sputtering apparatus and have an etching mask of discrete hemi-spherical structures formed by the agglomeration of a low melting point metal or alloy such as indium or Pb--Sn, which has been deposited on a non-wetting surface such as the oxidized surface of NiP layer or the protective carbon overcoat prior to etching. The morphology of the textured surface can be controlled by adjusting the average thickness of the deposited masking materials, the gas composition, as well as the base pressure during etching. An optimum texture created by either sputter etching or reactive ion etching on a magnetic recording medium provides better wear resistance and a lower flying height of a magnetic head as compared to conventional mechanical texturing techniques. In addition, the manufacturing processes of the magnetic recording medium thus defined including the deposition of underlayer, magnetic layer and protective overcoat and the creation of surface texture can be successively performed within a single vacuum system without breaking vacuum; the present invention thus possesses the advantages of process automation, improving quality, and lowering manufacturing cost.

摘要翻译： 通过在可以是镍 - 磷/铝 - 镁（Al-Mg）衬底的光滑衬底的表面上或在保护层的表面上执行溅射蚀刻或反应离子蚀刻来控制地纹理的磁记录介质，例如 作为碳外套。 上述两种类型的蚀刻工艺在溅射装置中进行，并具有通过低熔点金属或诸如铟或Pb-Sn的合金（例如铟或Pb-Sn）的聚集而形成的离散半球形结构的蚀刻掩模，其已沉积在 非浸润表面，例如NiP层的氧化表面或蚀刻前的保护性碳外涂层。 纹理表面的形态可以通过调节沉积的掩模材料的平均厚度，气体组成以及蚀刻期间的基底压力来控制。 与常规机械纹理技术相比，通过溅射蚀刻或反应离子蚀刻在磁记录介质上产生的最佳纹理提供了更好的耐磨性和较低的磁头飞行高度。 此外，可以在单个真空系统内连续地进行包括底层沉积，磁性层和保护外涂层的磁记录介质的制造过程，而不破坏真空; 因此本发明具有过程自动化，提高质量和降低制造成本的优点。

公开(公告)号：US5091221A

公开(公告)日：1992-02-25

申请号：US571138

申请日：1990-08-22

申请人： Jau-Jier Chu ,  Ming-Chih Lai ,  Mei-Rurng Tseng ,  Huei-Hsing Yeh

发明人： Jau-Jier Chu ,  Ming-Chih Lai ,  Mei-Rurng Tseng ,  Huei-Hsing Yeh

IPC分类号： C04B35/45 ,  C04B35/636 ,  C23C14/34 ,  H01L39/24

CPC分类号： C23C14/3414 ,  C04B35/45 ,  C04B35/6365 ,  H01L39/2435 ,  Y10S505/731 ,  Y10S505/741

摘要： A method for preparing a superconductor sputtering target is disclosed in which sputtering targets for coating superconductor films can be prepared essentially by mixing oxides (carbonates or fluorides) of metals such as Y, Ba, Cu (Bi, Pb), Sr, Ca,Cu) with the atomic ratio of individual elements be controlled in a specific range, an oxide superconductor paste being prepared by blending an organic binder and an organic solvent according to a specific solid percentage, and a metal such as aluminum being used as the substrate; by scraping with a squeegee and adjusting the distance between a stencil and the substrate such that the superconductor paste seeps through a mesh to be printed on the substrate and then dried; after scraping, screen-printing and drying having been repeated several times, the substrate being placed into an oven and heated to a temperature of 400.degree.-450.degree. C., at a rate of less than 5.degree. C./min, for 30 minutes and then cooled down to room temperature at the same rate of less than 5.degree. C./min.

摘要翻译： 公开了一种制备超导体溅射靶的方法，其中用于涂覆超导体膜的溅射靶可以通过将Y，Ba，Cu（Bi，Pb），Sr，Ca，Cu等金属的氧化物（碳酸盐或氟化物） ）将单体元素的原子比控制在特定范围内，通过将有机粘合剂和有机溶剂按照特定的固体成分配合而制备的氧化物超导体糊料，以及铝等金属作为基材; 通过用刮刀刮擦并调节模板和基底之间的距离，使得超导体糊剂通过待印刷的网孔渗透到基底上然后干燥; 在刮擦，丝网印刷和干燥之后，重复几次，将基材放入烘箱中，以低于5℃/分钟的速率加热到400-450℃的温度，30 分钟，然后以低于5℃/分钟的相同速率冷却至室温。

公开(公告)号：US5004723A

公开(公告)日：1991-04-02

申请号：US305004

申请日：1989-01-31

申请人： Ru-Shi Liu ,  Yao-Tsung Huang ,  Jau-Jier Chu ,  Jiuh-Ming Liang

发明人： Ru-Shi Liu ,  Yao-Tsung Huang ,  Jau-Jier Chu ,  Jiuh-Ming Liang

IPC分类号： C30B19/00 ,  H01L39/24

CPC分类号： H01L39/2419 ,  C30B19/00 ,  C30B29/22 ,  C30B29/225 ,  Y10S505/729

摘要： Preparation of superconducting epitaxial film using the method of liquid phase epitaxial growth comprising the steps of:(1) melting the oxides of bismuth, calcium, strontium, and copper or the oxides of thallium, calcium, barium, and copper at temperature in the range of 900.degree. C. to 950.degree. C. to form a melt;(2) contacting the melt in (1) with magnesium oxide or mono crystalline materials;(3) lowering the temperature of the melt at a rate of 0.3.degree.-2.degree. C./min until the temperature is within the range of 820.degree. C. to 890.degree. C.;(4) separating the melt and the magnesium oxide substrate or mono crystalline material to obtain a superconducting epitaxial film; and(5) quenching said film in (4) until the temperature thereof is at room temperature, whereby a superconducting epitaxial film having a thickness of 40 to 150 .mu.m is obtained.

摘要翻译： 使用液相外延生长方法制备超导外延膜包括以下步骤：（1）在温度范围内熔化铋，钙，锶和铜的氧化物或铊，钙，钡和铜的氧化物 900℃至950℃，以形成熔体; （2）使（1）中的熔体与氧化镁或单晶材料接触; （3）以0.3〜-2℃/分钟的速度降低熔体的温度，直到温度在820℃-890℃的范围内。 （4）分离熔体和氧化镁衬底或单晶材料以获得超导外延膜; 和（5）在（4）中淬灭所述膜直到其温度在室温下，由此获得厚度为40至150μm的超导外延膜。

公开(公告)号：US20070119702A1

公开(公告)日：2007-05-31

申请号：US11289289

申请日：2005-11-30

申请人： Jau-Jier Chu ,  Hsu-Fu Hung ,  I-Wen Lee ,  Chien-Min Weng ,  Tzu-Wen Chu

发明人： Jau-Jier Chu ,  Hsu-Fu Hung ,  I-Wen Lee ,  Chien-Min Weng ,  Tzu-Wen Chu

IPC分类号： C23C14/00

CPC分类号： C23C14/562

摘要： A method for sputtering a multilayer film on a sheet workpiece at a low temperature of the present invention has the following steps: employing plasma to clean a surface of a sheet workpiece, sputtering at least one metal oxide or semiconductor oxide on the sheet workpiece, and sputtering at least one ITO transparent electric layer on the sheet workpiece. The film sputtering process of the sheet workpiece employs continuously connecting work stations, thereby controlling delay time between the work stations of the sheet workpiece within a given range. The sheet workpiece is made from a macromolecular material.

摘要翻译： 在本发明的低温下在薄板工件上溅射多层膜的方法具有以下步骤：使用等离子体清洁片材工件的表面，在片材工件上溅射至少一种金属氧化物或半导体氧化物，以及 在片材工件上溅射至少一个ITO透明电层。 片材工件的薄膜溅射工艺使用连续的连续工作站，从而控制在给定范围内的片材工件的工作站之间的延迟时间。 片材工件由大分子材料制成。

公开(公告)号：US06441964B1

公开(公告)日：2002-08-27

申请号：US09756724

申请日：2001-01-10

申请人： Jau-Jier Chu ,  Chao-Sung Li ,  Cheng Chen Shih ,  Shao Chi Chang

发明人： Jau-Jier Chu ,  Chao-Sung Li ,  Cheng Chen Shih ,  Shao Chi Chang

IPC分类号： G02B111

CPC分类号： C03C17/3618 ,  C03C17/36 ,  C03C17/3657 ,  C03C2217/734 ,  C03C2217/94 ,  C03C2217/948 ,  G02B1/116 ,  H01J29/896 ,  H01J2229/8913 ,  Y10T428/24975

摘要： An anti-reflection with high conductivity and transmission controlled multi-layer coating for Flat CRT products is provided which includes five layers coating by vacuum sputtering and one layer coating by conventional wet process. The first layer is formed by an oxide material. The second layer is arranged on an underlying first layer and is formed by a metal. The third layer is arranged on an underlying second layer and is coated by vacuum sputtering. The third layer provides high conductivity thin film with resistance as low as 102 &OHgr;/square. The fourth layer is arranged on an underlying third layer and is formed by an oxide material. The fifth layer is formed by an oxide material. The fourth layer and fifth layer are coated by vacuum sputtering. The sixth layer is deposited on the top surface and is formed by a wet silica coating process.

摘要翻译： 提供了用于扁平CRT产品的具有高导电性和透射控制的多层涂层的抗反射，其包括通过真空溅射涂覆的五层和通过常规湿法的一层涂层。 第一层由氧化物材料形成。 第二层被布置在下面的第一层上并由金属形成。 第三层被布置在下面的第二层上，并通过真空溅射涂覆。 第三层提供高导电性薄膜，电阻低至102欧米加/平方。 第四层被布置在下面的第三层上并由氧化物形成。 第五层由氧化物材料形成。 通过真空溅射涂覆第四层和第五层。 第六层沉积在顶部表面上，并通过湿二氧化硅涂覆工艺形成。

公开(公告)号：US5916684A

公开(公告)日：1999-06-29

申请号：US995914

申请日：1997-12-22

申请人： Jau-Jier Chu ,  I-Wen Lee

发明人： Jau-Jier Chu ,  I-Wen Lee

IPC分类号： G02B1/11 ,  B32B17/00

CPC分类号： G02B1/116 ,  Y10T428/31678 ,  Y10T428/31692

摘要： An anti-reflection screen filter is provided that includes four consecutively applied layers to a substrate. A first layer, furthest from the substrate, is arranged on an underlying second layer and comprises an oxide material having a refractive index within the approximating range of 1.46 to 1.50 at a wavelength of 520 nm. The second layer is arranged on an underlying third layer and is formed by a metal having a refractive index within the approximating range of 1.5 to 4.0 at a wavelength of 520 nm. The third layer is arranged on an underlying fourth layer and is formed by a metal having a refractive index within the approximating range of 0.2 to 1.4 at a wavelength of 520 nm. The fourth layer is disposed on the front surface of a substrate and is formed by a metal having a refractive index within the approximating range of 1.5 to 4.0 at a wavelength of 520 nm.

摘要翻译： 提供了一种防反射屏蔽滤光器，其包括四个连续施加到基板的层。 距离衬底最远的第一层被布置在下面的第二层上，并且包括在520nm的波长处的折射率在1.46至1.50的近似范围内的氧化物材料。 第二层布置在下面的第三层上，并且由在520nm的波长处的折射率在1.5至4.0的近似范围内的金属形成。 第三层布置在下面的第四层上，并且由在520nm的波长处的折射率在0.2至1.4的近似范围内的金属形成。 第四层设置在基板的前表面上，并且由在520nm的波长处的折射率在1.5至4.0的近似范围内的金属形成。

公开(公告)号：US20070193876A1

公开(公告)日：2007-08-23

申请号：US11358090

申请日：2006-02-22

申请人： Jau-Jier Chu ,  Hsu-Fu Hung ,  I-Wen Lee ,  Chien-Min Weng ,  Chao-Lan Lee

发明人： Jau-Jier Chu ,  Hsu-Fu Hung ,  I-Wen Lee ,  Chien-Min Weng ,  Chao-Lan Lee

IPC分类号： C23C14/32 ,  B32B9/04

CPC分类号： C23C14/022 ,  C23C14/086 ,  C23C14/10 ,  G02B1/115 ,  Y10T428/31504

摘要： A manufacturing method for sputtering an anti-refection layer onto a board at low temperature has the merits of easily being implemented and easily mass-produced. The manufacturing method is used for sputtering multiple anti-refection layers onto a board. The method can be used for mass-producing anti-reflection panels as the raw material for the photo industry. The method is superior to the manufacturing method for producing nebulization anti-reflection panels. This invention utilizes the anti-reflection characteristics of the board structure that is sputtered and stacked alternatively with high index refraction layers and low index refraction layers. A continuous manufacturing process is adopted. The present invention uses plasma to clean the surface of the boards and adopts a traditional sputtering machine. Therefore, it is convenient for installing and mass-producing high quality material.

摘要翻译： 在低温下将抗反射层溅射到基板上的制造方法具有易于实现和容易批量生产的优点。 该制造方法用于将多个抗反射层溅射到板上。 该方法可用于批量生产抗反射板作为照相工业的原料。 该方法优于制造雾化防反射板的制造方法。 本发明利用板结构的防反射特性，其具有高折射率折射层和低折射折射层的溅射和堆叠。 采用连续制造工艺。 本发明使用等离子体清洁电路板的表面并采用传统的溅射机。 因此，安装和批量生产高品质材料是方便的。

公开(公告)号：US20070184183A1

公开(公告)日：2007-08-09

申请号：US11348271

申请日：2006-02-07

申请人： Jau-Jier Chu ,  Jyh-An Chen ,  Jung-Chi Chen

发明人： Jau-Jier Chu ,  Jyh-An Chen ,  Jung-Chi Chen

IPC分类号： C03C17/00 ,  B05D1/18

CPC分类号： B05D1/18 ,  B05D5/08 ,  G02B1/18 ,  G02B27/0006

摘要： A dipping process for a long-term anti-smudge coating is disclosed. The dipping process includes the steps of: fixing a plurality of polarizers onto a dipping frame; moving a solution tank of a dipping apparatus upwardly to the dipping frame for passively dipping the polarizers in the solution tank with long-term anti-smudge solutions; moving the solution tank down for passively separating the polarizers from the solution tank; coating the long-term anti-smudge solutions comprising medicinal solutes and solvents on the polarizers to form a solution films; and processing the solution films by fixing the polarizers onto a fixing board under a constant temperature and constant humidity.

摘要翻译： 公开了一种用于长期防污涂料的浸渍方法。 浸渍方法包括以下步骤：将多个偏振器固定到浸渍框架上; 将浸渍设备的溶液罐向上移动到浸渍框架，以用长期防污溶液将偏光器被动地浸入溶液罐中; 向下移动溶液罐，将偏光板与溶液罐进行被动分离; 将包含药物溶质和溶剂的长期防污溶液涂布在偏光板上以形成溶液膜; 并且通过在恒定温度和恒定的湿度下将偏振器固定到定影板上来处理溶液膜。

公开(公告)号：US07867634B2

公开(公告)日：2011-01-11

申请号：US12000193

申请日：2007-12-10

申请人： Jau-Jier Chu ,  I-Wen Lee ,  Shih-Liang Chou ,  Po-Yao Lai ,  Chien-Min Weng

发明人： Jau-Jier Chu ,  I-Wen Lee ,  Shih-Liang Chou ,  Po-Yao Lai ,  Chien-Min Weng

IPC分类号： B32B9/00

CPC分类号： G06F3/0418 ,  C03C17/3417 ,  C03C2217/732 ,  C03C2217/948 ,  C03C2218/365 ,  G02B1/115 ,  Y10T428/24975 ,  Y10T428/265 ,  Y10T428/31507 ,  Y10T428/31935

摘要： A ITO layer structure, which is composed of the ITO as the outermost layer and the first anti-reflected layer on the specific side of the transparent substrate, furthermore, the second anti-reflected layer is formed on the opposite side of substrate, can improve the total transmittance.

摘要翻译： 由作为最外层的ITO和透明基板的特定侧的第一抗反射层构成的ITO层结构体，另外，在基板的相对侧形成第二抗反射层，能够提高 总透光率。

公开(公告)号：US20100215931A1

公开(公告)日：2010-08-26

申请号：US12000193

申请日：2007-12-10

申请人： Jau-Jier Chu ,  I-Wen Lee ,  Shih-Liang Chou ,  Po-Yao Lai ,  Chien-Min Weng

发明人： Jau-Jier Chu ,  I-Wen Lee ,  Shih-Liang Chou ,  Po-Yao Lai ,  Chien-Min Weng

IPC分类号： G06F3/041 ,  B32B9/00 ,  B05D1/18 ,  B32B17/06 ,  B32B27/06 ,  B32B7/02

CPC分类号： G06F3/0418 ,  C03C17/3417 ,  C03C2217/732 ,  C03C2217/948 ,  C03C2218/365 ,  G02B1/115 ,  Y10T428/24975 ,  Y10T428/265 ,  Y10T428/31507 ,  Y10T428/31935

摘要： A ITO layer structure, which is composed of the ITO as the outermost layer and the first anti-reflected layer on the specific side of the transparent substrate, furthermore, the second anti-reflected layer is formed on the opposite side of substrate, can improve the total transmittance.

摘要翻译： 由作为最外层的ITO和透明基板的特定侧的第一抗反射层构成的ITO层结构体，另外，在基板的相对侧形成第二抗反射层，能够提高 总透光率。