摘要:
A semiconductor memory device includes a bitline sensing amp detecting and amplifying data of a pair of bitlines from a memory cell, a column selecting unit transmitting the data of the pair of bitlines to a pair of local datalines in response to a column selecting signal, a dataline precharging unit precharging the pair of local datalines to a precharging voltage level in response to a precharging signal, and a dataline sensing amp detecting and amplifying data transmitted to the pair of local datalines. The dataline sensing amp includes a charge sync unit discharging the pair of local datalines at the precharging voltage level in response to a first dataline sensing enabling signal and data of the pair of local datalines, and a data sensing unit transmitting data of the pair of local datalines to a pair of global datalines in response to a second dataline sensing enabling signal.
摘要:
A semiconductor memory device includes a bitline sensing amp detecting and amplifying data of a pair of bitlines from a memory cell, a column selecting unit transmitting the data of the pair of bitlines to a pair of local datalines in response to a column selecting signal, a dataline precharging unit precharging the pair of local datalines to a precharging voltage level in response to a precharging signal, and a dataline sensing amp detecting and amplifying data transmitted to the pair of local datalines. The dataline sensing amp includes a charge sync unit discharging the pair of local datalines at the precharging voltage level in response to a first dataline sensing enabling signal and data of the pair of local datalines, and a data sensing unit transmitting data of the pair of local datalines to a pair of global datalines in response to a second dataline sensing enabling signal.
摘要:
A synchronous semiconductor memory device includes a data input buffer and a data strobe input buffer. The data strobe input buffer includes an input buffer circuit and a detection circuit. The input buffer circuit is configured to be enabled based on an active signal, and to compare a data strobe signal with a first reference voltage to generate an internal data strobe signal. The detection circuit is configured to be enabled based on the active signal, and to compare the data strobe signal with a second reference voltage to generate a detection signal for enabling the data input buffer.
摘要:
A synchronous semiconductor memory device includes a data input buffer and a data strobe input buffer. The data strobe input buffer includes an input buffer circuit and a detection circuit. The input buffer circuit is configured to be enabled based on an active signal, and to compare a data strobe signal with a first reference voltage to generate an internal data strobe signal. The detection circuit is configured to be enabled based on the active signal, and to compare the data strobe signal with a second reference voltage to generate a detection signal for enabling the data input buffer.
摘要:
A semiconductor memory device for reducing ripple noise of a back-bias voltage, and a method of driving the semiconductor memory device include a word line driving circuit and a delay logic circuit. The word line driving circuit enables a sub-word line connected to a selected memory cell to a first voltage, and disables the sub-word line of a non-selected memory cell to a second voltage and a third voltage, in response to a sub-word line enable signal, a first word line driving signal, and a second word line driving signal. The delay logic circuit controls the semiconductor memory device so that an amount of charge of the sub-word line that is introduced to the third voltage is greater than an amount of charge of the sub-word line that is introduced to the second voltage by changing a transition point of time of the sub-word line enable signal with respect to a transition point of time of the first word line driving signal, during the disabling of the sub-word line.
摘要:
A semiconductor memory device having reduced sensing noise and sensing current by reducing the number of cells activated by a word line is provided. The semiconductor memory device includes a memory cell array, which is segmented into a plurality of memory cell groups in a column direction, and a plurality of sub-word line drivers for selectively activating the sub-word line of a corresponding memory cell group in response to a group selection signal. The semiconductor memory device prevents sensing operation from occurring in a memory cell group which is not selected, while sensing operation is performed in a memory cell group which is selected by the group selection signal.
摘要:
An input buffer that can operate with Low Voltage Transistor-Transistor Logic (LVTTL) and with Stub Series Terminated transceiver Logic (SSTL) includes a differential amplifier that differentially amplifies a reference voltage and an external input signal. A switching system is coupled to the differential amplifier, to supply an external power supply voltage to the differential amplifier under SSTL operating conditions and to supply an internal power supply voltage to the differential amplifier under LVTTL operating conditions. An internal power supply voltage generator is responsive to the external power supply voltage, to generate the internal power supply voltage therefrom. The internal power supply voltage generator supplies the internal power supply voltage to the switching system. The switching system preferably includes a first switch that supplies the external power supply voltage to the differential amplifier in response to an SSTL control signal. A second switch supplies the internal power supply voltage to the differential amplifier in response to an LVTTL control signal.
摘要:
A semiconductor memory device for reducing ripple noise of a back-bias voltage, and a method of driving the semiconductor memory device include a word line driving circuit and a delay logic circuit. The word line driving circuit enables a sub-word line connected to a selected memory cell to a first voltage, and disables the sub-word line of a non-selected memory cell to a second voltage and a third voltage, in response to a sub-word line enable signal, a first word line driving signal, and a second word line driving signal. The delay logic circuit controls the semiconductor memory device so that an amount of charge of the sub-word line that is introduced to the third voltage is greater than an amount of charge of the sub-word line that is introduced to the second voltage by changing a transition point of time of the sub-word line enable signal with respect to a transition point of time of the first word line driving signal, during the disabling of the sub-word line.