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公开(公告)号：US08315080B2
公开(公告)日：2012-11-20
申请号：US12597168
申请日：2008-04-23
申请人： Jea Gun Park , Gon Sub Lee , Su Hwan Lee , Dal Ho Kim , Sung Ho Seo , Woo Sik Nam , Hyun Min Seung , Jong Dae Lee , Dong Won Shin
发明人： Jea Gun Park , Gon Sub Lee , Su Hwan Lee , Dal Ho Kim , Sung Ho Seo , Woo Sik Nam , Hyun Min Seung , Jong Dae Lee , Dong Won Shin
IPC分类号： G11C13/04
CPC分类号： H05B33/22 , B82Y20/00 , B82Y30/00 , G09G3/2011 , G09G3/3216 , G09G2310/061 , H01L27/26 , H01L27/3244 , H01L51/0591 , H01L51/52 , H01L2251/5338 , H01L2251/5369
摘要： Provided are a luminescent device and a method of manufacturing the same. The luminescent device includes a charge trapping layer having bistable conductance and negative differential resistance (NDR) characteristics, and an organic luminescent layer electrically connected to the charge trapping layer. The charge trapping layer comprise a nanocrystal layer intervened in an organic layer, and the nanocrystal layer comprises a plurality of nanocrystals.
摘要翻译： 提供一种发光装置及其制造方法。 发光装置包括具有双稳电导和负差分电阻（NDR）特性的电荷捕获层，以及电连接到电荷捕获层的有机发光层。 电荷捕获层包括介于有机层中的纳米晶层，并且纳米晶层包含多个纳米晶体。
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公开(公告)号：US20100208507A1
公开(公告)日：2010-08-19
申请号：US12597168
申请日：2008-04-23
申请人： Jea Gun Park , Gon Sub Lee , Su Hwan Lee , Dal Ho Kim , Sung Ho Seo , Woo Sik Nam , Hyun Min Seung , Jong Dae Lee , Dong Won Shin
发明人： Jea Gun Park , Gon Sub Lee , Su Hwan Lee , Dal Ho Kim , Sung Ho Seo , Woo Sik Nam , Hyun Min Seung , Jong Dae Lee , Dong Won Shin
CPC分类号： H05B33/22 , B82Y20/00 , B82Y30/00 , G09G3/2011 , G09G3/3216 , G09G2310/061 , H01L27/26 , H01L27/3244 , H01L51/0591 , H01L51/52 , H01L2251/5338 , H01L2251/5369
摘要： Provided are a luminescent device and a method of manufacturing the same. The luminescent device includes a charge trapping layer having bistable conductance and negative differential resistance (NDR) characteristics, and an organic luminescent layer electrically connected to the charge trapping layer.
摘要翻译： 提供一种发光装置及其制造方法。 发光装置包括具有双稳电导和负差分电阻（NDR）特性的电荷捕获层，以及电连接到电荷捕获层的有机发光层。
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公开(公告)号：US09755169B2
公开(公告)日：2017-09-05
申请号：US14417554
申请日：2012-07-27
申请人： Jea Gun Park , Sung Ho Seo , Woo Sik Nam , Jong Sun Lee
发明人： Jea Gun Park , Sung Ho Seo , Woo Sik Nam , Jong Sun Lee
CPC分类号： H01L51/0591 , B82Y10/00 , G11C11/5664 , G11C13/0014 , G11C2213/15 , H01L27/101
摘要： Provided is a nonvolatile memory device. The nonvolatile memory device includes: first and second electrodes spaced from each other; at least one nano crystal layer disposed between the first and second electrodes; and first and second material layers respectively disposed between the first and second electrodes and the nano crystal layer and having a bistable conductive property, wherein the first and second material layers are formed asymmetrical to each other.
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公开(公告)号：US20150214497A1
公开(公告)日：2015-07-30
申请号：US14417554
申请日：2012-07-27
申请人： Jea Gun Park , Sung Ho Seo , Woo Sik Nam , Jong Sun Lee
发明人： Jea Gun Park , Sung Ho Seo , Woo Sik Nam , Jong Sun Lee
CPC分类号： H01L51/0591 , B82Y10/00 , G11C11/5664 , G11C13/0014 , G11C2213/15 , H01L27/101
摘要： Provided is a nonvolatile memory device. The nonvolatile memory device includes: first and second electrodes spaced from each other; at least one nano crystal layer disposed between the first and second electrodes; and first and second material layers respectively disposed between the first and second electrodes and the nano crystal layer and having a bistable conductive property, wherein the first and second material layers are formed asymmetrical to each other.
摘要翻译： 提供了一种非易失性存储器件。 非易失性存储器件包括：彼此间隔开的第一和第二电极; 设置在第一和第二电极之间的至少一个纳米晶体层; 以及分别设置在第一和第二电极与纳米晶体层之间并具有双稳态导电性能的第一和第二材料层，其中第一和第二材料层彼此不对称地形成。
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