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    Silicon-containing layer deposition with silicon compounds
    3.
    发明授权
    Silicon-containing layer deposition with silicon compounds 有权
    含硅层沉积与硅化合物

    公开(公告)号：US07540920B2

    公开(公告)日：2009-06-02

    申请号：US10688797

    申请日：2003-10-17

    申请人： Kaushal K. Singh ,  Paul B. Comita ,  Lance A. Scudder ,  David K. Carlson

    发明人： Kaushal K. Singh ,  Paul B. Comita ,  Lance A. Scudder ,  David K. Carlson

    IPC分类号： C30B21/02

    CPC分类号： C07F7/0896 ,  C01B33/04 ,  C01B33/107 ,  C07F7/12 ,  C23C16/24 ,  C23C16/30

    摘要： Embodiments of the invention generally provide a composition of silicon compounds and methods for using the silicon compounds to deposit a silicon-containing film. The processes employ introducing the silicon compound to a substrate surface and depositing a portion of the silicon compound, the silicon motif, as the silicon-containing film. The ligands are another portion of the silicon compound and are liberated as an in-situ etchant. The in-situ etchants supports the growth of selective silicon epitaxy. Silicon compounds include SiRX6, Si2RX6, Si2RX8, wherein X is independently hydrogen or halogen and R is carbon, silicon or germanium. Silicon compound also include compounds comprising three silicon atoms, fourth atom of carbon, silicon or germanium and atoms of hydrogen or halogen with at least one halogen, as well as, comprising four silicon atoms, fifth atom of carbon, silicon or germanium and atoms of hydrogen or halogen with at least one halogen.

    摘要翻译： 本发明的实施方案通常提供硅化合物的组合物和使用硅化合物沉积含硅膜的方法。 该方法采用将硅化合物引入衬底表面，并将一部分硅化合物硅基体作为含硅膜沉积。 配体是硅化合物的另一部分，并且被释放为原位蚀刻剂。 原位蚀刻剂支持选择性硅外延的生长。 硅化合物包括SiRX6，Si2RX6，Si2RX8，其中X独立地是氢或卤素，R是碳，硅或锗。 硅化合物还包括包含三个硅原子，第四碳原子，硅或锗的氢原子或卤原子与至少一个卤素的化合物，以及包含四个硅原子，第五个碳原子，硅或锗的化合物和 氢或卤素与至少一个卤素。

    Silicon-containing layer deposition with silicon compounds
    4.
    发明授权
    Silicon-containing layer deposition with silicon compounds 有权
    含硅层沉积与硅化合物

    公开(公告)号：US07645339B2

    公开(公告)日：2010-01-12

    申请号：US11549033

    申请日：2006-10-12

    申请人： Kaushal K. Singh ,  Paul B. Comita ,  Lance A. Scudder ,  David K. Carlson

    发明人： Kaushal K. Singh ,  Paul B. Comita ,  Lance A. Scudder ,  David K. Carlson

    IPC分类号： C30B21/04

    CPC分类号： C07F7/0896 ,  C01B33/04 ,  C01B33/107 ,  C07F7/12 ,  C23C16/24 ,  C23C16/30

    摘要： Embodiments of the invention relate to methods for depositing silicon-containing materials on a substrate. In one example, a method for selectively and epitaxially depositing a silicon-containing material is provided which includes positioning and heating a substrate containing a crystalline surface and a non-crystalline surface within a process chamber, exposing the substrate to a process gas containing neopentasilane, and depositing an epitaxial layer on the crystalline surface. In another example, a method for blanket depositing a silicon-containing material is provide which includes positioning and heating a substrate containing a crystalline surface and feature surfaces within a process chamber and exposing the substrate to a process gas containing neopentasilane and a carbon source to deposit a silicon carbide blanket layer across the crystalline surface and the feature surfaces. Generally, the silicon carbide blanket layer contains a silicon carbide epitaxial layer selectively deposited on the crystalline surface.

    摘要翻译： 本发明的实施例涉及在衬底上沉积含硅材料的方法。 在一个实例中，提供了一种用于选择性和外延沉积含硅材料的方法，其包括在处理室内定位和加热含有结晶表面和非结晶表面的基底，将基底暴露于含有新戊硅烷的工艺气体中， 以及在所述晶体表面上沉积外延层。 在另一个实例中，提供了一种用于覆盖沉积含硅材料的方法，其包括定位和加热含有结晶表面的基底和处理室内的特征表面，并将基底暴露于含有新戊硅烷和碳源的工艺气体沉积 跨过结晶表面和特征表面的碳化硅毯层。 通常，碳化硅覆盖层包含选择性地沉积在晶体表面上的碳化硅外延层。

    Silicon-containing layer deposition with silicon compounds
    5.
    发明授权
    Silicon-containing layer deposition with silicon compounds 有权
    含硅层沉积与硅化合物

    公开(公告)号：US07758697B2

    公开(公告)日：2010-07-20

    申请号：US11969139

    申请日：2008-01-03

    申请人： Paul B. Comita ,  Lance A. Scudder ,  David K. Carlson

    发明人： Paul B. Comita ,  Lance A. Scudder ,  David K. Carlson

    IPC分类号： C30B21/02

    CPC分类号： C07F7/0896 ,  C01B33/04 ,  C01B33/107 ,  C07F7/12 ,  C23C16/24 ,  C23C16/30

    摘要： Methods for depositing a silicon-containing film are described. The methods may include delivering a silicon compound to a surface or a substrate, and reacting the silicon compound to grow the silicon-containing film. The silicon compound may be one or more compounds having a formula selected from the group Si4X8, Si4X10, Si5X10, and Si5X12, where X is independently a hydrogen or halogen.

    摘要翻译： 描述了沉积含硅膜的方法。 所述方法可以包括将硅化合物递送到表面或基底，并使硅化合物反应生长含硅膜。 硅化合物可以是一种或多种具有选自Si 4 X 8，Si 4 X 10，Si 5 X 10和Si 5 X 12的式的化合物，其中X独立地是氢或卤素。

    Vented lower liner for heating exhaust gas from a single substrate reactor
    6.
    发明授权
    Vented lower liner for heating exhaust gas from a single substrate reactor 有权
    用于从单个基板反应器加热废气的通风下衬板

    公开(公告)号：US06254686B1

    公开(公告)日：2001-07-03

    申请号：US09650098

    申请日：2000-08-25

    申请人： Paul B. Comita ,  David K. Carlson ,  Norma B. Riley ,  Doria W. Fan ,  Rekha Ranganathan

    发明人： Paul B. Comita ,  David K. Carlson ,  Norma B. Riley ,  Doria W. Fan ,  Rekha Ranganathan

    IPC分类号： C23C1600

    CPC分类号： C23C16/4408 ,  C23C16/4412 ,  C23C16/481 ,  C30B25/14 ,  C30B31/16

    摘要： The present invention is a single wafer reactor having a vented lower liner for heating exhaust gas. The apparatus of the present invention includes a reaction chamber. A wafer support member which divides the chamber into an upper and lower portion is positioned within the chamber. A gas outlet for exhausting gas from the chamber has a vent to exhaust gas from the lower portion of the chamber and an exhaust passage opening to exhaust gas from the upper portion of the chamber. Heated inert purge gas is fed from the lower chamber portion through the vent at a rate so as to prevent the deposition gas from condensing in the exhaust passage.

    摘要翻译： 本发明是具有用于加热废气的排气下衬板的单晶片反应器。 本发明的装置包括反应室。 将腔室分成上部和下部的晶片支撑构件定位在腔室内。 用于从腔室排出气体的气体出口具有从腔室的下部排出的排气和从腔室的上部排出废气的排气通道。 加热的惰性吹扫气体以一定的速度从下室部分通过排气口供给，以防止沉积气体在排气通道中冷凝。

    Point-of-use exhaust by-product reactor
    9.
    发明授权
    Point-of-use exhaust by-product reactor 失效
    使用废气副产物反应器

    公开(公告)号：US06368567B2

    公开(公告)日：2002-04-09

    申请号：US09167269

    申请日：1998-10-07

    申请人： Paul B. Comita ,  Rekha Ranganathan ,  David K. Carlson ,  Dale R. DuBois ,  Hali J. L. Forstner

    发明人： Paul B. Comita ,  Rekha Ranganathan ,  David K. Carlson ,  Dale R. DuBois ,  Hali J. L. Forstner

    IPC分类号： C01B700

    CPC分类号： C23C16/4412

    摘要： A method and an apparatus is provided for removing wafer processing by-products from gas fluid exhaust systems utilizing an energy source placed within an exhaust channel either alone or in combination with a cleaning gas. The placement of the energy source in an exhaust channel enables emitted energy to react with wafer processing by-products to convert the by-product residues to more removable forms. Additionally provided is a cleaning gas source internal to the exhaust channel to further react with and convert exiting by-product residues to gaseous fluids.

    摘要翻译： 提供了一种方法和装置，用于单独或与清洁气体组合地利用放置在排气通道内的能量源从气体流体排放系统中除去晶片加工副产物。 能量源在排气通道中的放置使得能够发射的能量与晶片加工副产物反应，以将副产物残余物转化为更可移除的形式。 另外提供了排气通道内部的清洁气体源，以进一步与离子副产物残留物反应并转化成气体流体。

    Permanently mounted reference sample for a substrate measurement tool
    10.
    发明授权
    Permanently mounted reference sample for a substrate measurement tool 失效
    永久安装的基准测量工具的参考样品

    公开(公告)号：US5924058A

    公开(公告)日：1999-07-13

    申请号：US800863

    申请日：1997-02-14

    申请人： Ann P. Waldhauer ,  David K. Carlson ,  Paul B. Comita

    发明人： Ann P. Waldhauer ,  David K. Carlson ,  Paul B. Comita

    IPC分类号： G01B11/06 ,  G01N21/27 ,  H01L21/66 ,  H01L21/68 ,  H01L23/544 ,  G01R31/265

    CPC分类号： H01L22/34 ,  H01L21/6835 ,  H01L22/20 ,  H01L22/12 ,  H01L2924/30105

    摘要： A method and apparatus for measuring a reference sample in order to collect a reference characteristic, without moving the reference sample, is disclosed. In one embodiment, the method of the present invention comprises the following steps. An operator places a cassette of unprocessed wafers into a processing chamber of a processing tool that also includes a holding chamber. While the wafers are being processed, the holding chamber, which is coupled to a measurement tool, measures the reference sample that is mounted on a stage in the holding chamber. The resulting reference characteristic value (e.g., spectrum to determine film thickness) is then stored in the measurement tool's computer system. After a film is grown/formed on the wafers, the processed wafers are moved one by one into the holding chamber to be measured. A first wafer is placed on the stage in the holding chamber and a characteristic value for the first processed wafer is obtained using the measurement tool. The computer system of the measurement tool uses an algorithm to compare the reference characteristic value to the first wafer characteristic value to obtain a first differential value. The first differential value is then used to help determine the characteristic (e.g., film thickness) of the film formed on the first processed wafer. In another embodiment, a similar process is followed to measure another characteristic of a wafer, such as resistivity. These examples are illustrative and not limiting. Thus, the present invention can be used whenever a reference sample is to be measured to help determine a selected characteristic of a substrate or wafer.

    摘要翻译： 公开了一种用于测量参考样本以便收集参考特征而不移动参考样本的方法和装置。 在一个实施例中，本发明的方法包括以下步骤。 操作者将未处理的晶片盒放置在还包括保持室的处理工具的处理室中。 当正在处理晶片时，耦合到测量工具的保持室测量安装在保持室中的台上的参考样品。 然后将所得到的参考特征值（例如，用于确定膜厚度的光谱）存储在测量工具的计算机系统中。 在薄片生长/形成在晶片上之后，将经处理的晶片一个接一个地移动到要测量的保持室中。 将第一晶片放置在保持室中的台上，并使用测量工具获得第一处理晶片的特征值。 测量工具的计算机系统使用算法​​将参考特征值与第一晶片特征值进行比较，以获得第一差分值。 然后使用第一微分值来确定形成在第一处理晶片上的膜的特性（例如，膜厚度）。 在另一个实施例中，遵循类似的过程来测量晶片的另一特性，例如电阻率。 这些实施例是说明性的而不是限制性的。 因此，每当要测量参考样品以帮助确定衬底或晶片的选定特性时，可以使用本发明。