公开(公告)号：US06876442B2

公开(公告)日：2005-04-05

申请号：US10078071

申请日：2002-02-13

申请人： Jean R. Vatus ,  David K. Carlson ,  Arkadii V. Samoilov ,  Lance A. Scudder ,  Paul B. Comita ,  Annie A. Karpati

发明人： Jean R. Vatus ,  David K. Carlson ,  Arkadii V. Samoilov ,  Lance A. Scudder ,  Paul B. Comita ,  Annie A. Karpati

IPC分类号： C23C16/52 ,  H01L21/205 ,  H01L21/66 ,  G01J5/48 ,  G01R31/26

CPC分类号： H01L22/20

摘要： A method is provided wherein a temperature reading error of a pyrometer is avoided. An upper pyrometer is used to detect infrared radiation from a test layer formed on a test substrate under standard processing conditions. The infrared radiation from the test layer has a period having a length which is indicative of growth rate of the layer. The period is generally inversely proportional to the growth rate. The growth rate is directly related to the temperature.

摘要翻译： 提供了避免高温计的温度读数误差的方法。 在标准处理条件下，使用上高温计来检测在测试基板上形成的测试层的红外辐射。 来自测试层的红外辐射具有指示层的生长速率的长度的周期。 这个时期通常与增长率成反比。 生长速度与温度直接相关。

公开(公告)号：US20130032084A1

公开(公告)日：2013-02-07

申请号：US13483002

申请日：2012-05-29

申请人： Visweswaren Sivaramakrishnan ,  Tirunelveli S. Ravi ,  Quoc Vinh Truong ,  Jean R. Vatus ,  Visweswaren Sivaramakrishnan

发明人： Visweswaren Sivaramakrishnan ,  Tirunelveli S. Ravi ,  Andrzej Kaszuba ,  Quoc Vinh Truong ,  Jean R. Vatus

IPC分类号： C30B25/14 ,  C30B25/12

CPC分类号： C30B25/14 ,  C30B25/105 ,  C30B25/12 ,  C30B25/165 ,  C30B25/20 ,  C30B29/06 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02513 ,  H01L21/02532 ,  H01L21/0262 ,  H01L31/1804

摘要： A system for depositing thin single crystal silicon wafers by epitaxial deposition in a silicon precursor depletion mode with cross-flow deposition may include: a substrate carrier with low total heat capacity, high emissivity and small volume; a lamp module with rapid heat-up, efficient heat production, and spatial control over heating; and a manifold designed for cross-flow processing. Furthermore, the substrate carrier may include heat reflectors to control heat loss from the edges of the carrier and/or heat chokes to thermally isolate the carrier from the manifolds, allowing independent temperature control of the manifolds. The carrier and substrates may be configured for deposition on both sides of the substrates—the substrates having release layers on both sides and the carriers being configured to have equal process gas flow over both surfaces of the substrate. High volume may be addressed by a deposition system comprising multiple mini-batch reactors.

摘要翻译： 通过在具有交叉流沉积的硅前体耗尽模式中通过外延沉积沉积薄单晶硅晶片的系统可以包括：具有低总热容量，高发射率和小体积的基板载体; 具有快速升温，高效热量生产和加热空间控制的灯模块; 以及设计用于交叉流处理的歧管。 此外，衬底载体可以包括热反射器，以控制从载体和/或热扼流器的边缘的热损失，以将载体与歧管热隔离，允许对歧管进行独立的温度控制。 载体和基底可以被配置用于在基底的两侧上沉积 - 在两侧上具有释放层的基底和载体构造成在基底的两个表面上具有相等的工艺气流。 高体积可以由包括多个微型间歇反应器的沉积系统来解决。

公开(公告)号：US08512472B2

公开(公告)日：2013-08-20

申请号：US12270590

申请日：2008-11-13

申请人： Jean R. Vatus ,  Kailash Kiran Patalay

发明人： Jean R. Vatus ,  Kailash Kiran Patalay

IPC分类号： C23C16/00

CPC分类号： C23C16/4585 ,  C23C16/45504

摘要： Methods and apparatus for controlling temperature and flow characteristics of process gases in a process chamber have been provided herein. In some embodiments, an apparatus for controlling temperature and flow characteristics of a process gas in a process chamber may include a gas pre-heat ring configured to be disposed about a substrate and having a labyrinthine conduit disposed therein, wherein the labyrinthine conduit has an inlet and outlet to facilitate the flow of the process gas therethrough.

摘要翻译： 本文提供了用于控制处理室中工艺气体的温度和流动特性的方法和装置。 在一些实施例中，用于控制处理室中的处理气体的温度和流动特性的装置可以包括气体预热环，其构造成围绕基板设置并且具有布置在其中的迷宫式导管，其中迷宫式管道具有入口 和出口以便于工艺气体流过其中。

公开(公告)号：US08441640B2

公开(公告)日：2013-05-14

申请号：US12238987

申请日：2008-09-26

申请人： Kailash Kiran Patalay ,  Richard O. Collins ,  Jean R. Vatus ,  Zhepeng Cong

发明人： Kailash Kiran Patalay ,  Richard O. Collins ,  Jean R. Vatus ,  Zhepeng Cong

IPC分类号： G01B11/00 ,  C23F1/00

CPC分类号： H01L21/68 ,  C30B25/12 ,  H01L21/67259 ,  H01L21/68785 ,  H01L21/68792

摘要： A substrate processing system includes an optical measurement assembly coupled to an exterior of a processing chamber that has a portion that is transparent. The processing chamber includes a reference object and a pedestal for supporting a work piece. The optical measurement assembly measures a lateral location, a height and a tilt of the pedestal by transmitting light into the processing chamber through the transparent portion of the processing chamber and detecting a reflected light from both the reference object and the portion of the pedestal after the reflected light leaves the chamber through the transparent portion of the processing chamber. A method of adjusting a pedestal includes analyzing the reflected light and leveling the pedestal, translating the pedestal, calibrating the pedestal height to a preheat ring level, and checking the level and location of the pedestal in response to the analyzed reflected light.

摘要翻译： 衬底处理系统包括耦合到具有透明部分的处理室的外部的光学测量组件。 处理室包括用于支撑工件的参考物体和基座。 光学测量组件通过将光通过处理室的透明部分传输到处理室中来测量基座的横向位置，高度和倾斜度，并且检测来自基准物体和底座部分之后的反射光 反射光通过处理室的透明部分离开室。 调整基座的方法包括：分析反射光并调平基座，平移基座，将基座高度校准到预热环电平，以及响应分析的反射光检查基座的电平和位置。

公开(公告)号：US07964038B2

公开(公告)日：2011-06-21

申请号：US12244604

申请日：2008-10-02

申请人： Kailash Kiran Patalay ,  Jean R. Vatus ,  Dean Berlin

发明人： Kailash Kiran Patalay ,  Jean R. Vatus ,  Dean Berlin

IPC分类号： C23C16/00

CPC分类号： H01L21/68785 ,  H01L21/67115 ,  H01L21/68742 ,  Y10T428/31504

摘要： Methods and apparatus for providing an improved azimuthal thermal uniformity of a substrate are provided herein. In some embodiments, a substrate support for use in a semiconductor process chamber includes a susceptor plate; and a supporting member to support a backside of the susceptor plate proximate an outer edge thereof, wherein the supporting member substantially covers the backside of the susceptor plate. In some embodiments, the substrate support is disposed in a process chamber having at least some lamps disposed below the supporting member and utilized for heating the back side of the susceptor plate.

摘要翻译： 本文提供了提供改善的基板的方位角热均匀性的方法和装置。 在一些实施例中，用于半导体处理室的衬底支撑件包括基座板; 以及支撑构件，其支撑靠近其外边缘的基座板的背面，其中支撑构件基本上覆盖基座板的背面。 在一些实施例中，衬底支撑件设置在具有至少一些设置在支撑构件下方并用于加热感受板的背面的灯的处理室中。

公开(公告)号：US09255346B2

公开(公告)日：2016-02-09

申请号：US13483002

申请日：2012-05-29

申请人： Visweswaren Sivaramakrishnan ,  Tirunelveli S. Ravi ,  Andrzej Kaszuba ,  Bozena Kaszuba ,  Quoc Vinh Truong ,  Jean R. Vatus

发明人： Visweswaren Sivaramakrishnan ,  Tirunelveli S. Ravi ,  Andrzej Kaszuba ,  Quoc Vinh Truong ,  Jean R. Vatus

IPC分类号： C30B21/02 ,  C30B29/06 ,  C30B25/16 ,  H01L21/02

CPC分类号： C30B25/14 ,  C30B25/105 ,  C30B25/12 ,  C30B25/165 ,  C30B25/20 ,  C30B29/06 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02513 ,  H01L21/02532 ,  H01L21/0262 ,  H01L31/1804

摘要： A system for depositing thin single crystal silicon wafers by epitaxial deposition in a silicon precursor depletion mode with cross-flow deposition may include: a substrate carrier with low total heat capacity, high emissivity and small volume; a lamp module with rapid heat-up, efficient heat production, and spatial control over heating; and a manifold designed for cross-flow processing. Furthermore, the substrate carrier may include heat reflectors to control heat loss from the edges of the carrier and/or heat chokes to thermally isolate the carrier from the manifolds, allowing independent temperature control of the manifolds. The carrier and substrates may be configured for deposition on both sides of the substrates—the substrates having release layers on both sides and the carriers being configured to have equal process gas flow over both surfaces of the substrate. High volume may be addressed by a deposition system comprising multiple mini-batch reactors.

摘要翻译： 通过在具有交叉流沉积的硅前体耗尽模式中通过外延沉积沉积薄单晶硅晶片的系统可以包括：具有低总热容量，高发射率和小体积的基板载体; 具有快速升温，高效热量生产和加热空间控制的灯模块; 以及设计用于交叉流处理的歧管。 此外，衬底载体可以包括热反射器，以控制从载体和/或热扼流器的边缘的热损失，以将载体与歧管热隔离，允许对歧管进行独立的温度控制。 载体和基底可以被配置用于在基底的两侧上沉积 - 在两侧上具有释放层的基底和载体构造成在基底的两个表面上具有相等的工艺气流。 高体积可以由包括多个微型间歇反应器的沉积系统来解决。

公开(公告)号：US20100086784A1

公开(公告)日：2010-04-08

申请号：US12244604

申请日：2008-10-02

申请人： KAILASH KIRAN PATALAY ,  Jean R. Vatus ,  Dean Berlin

发明人： KAILASH KIRAN PATALAY ,  Jean R. Vatus ,  Dean Berlin

IPC分类号： B05C13/00 ,  B32B9/04

CPC分类号： H01L21/68785 ,  H01L21/67115 ,  H01L21/68742 ,  Y10T428/31504

摘要： Methods and apparatus for providing an improved azimuthal thermal uniformity of a substrate are provided herein. In some embodiments, a substrate support for use in a semiconductor process chamber includes a susceptor plate; and a supporting member to support a backside of the susceptor plate proximate an outer edge thereof, wherein the supporting member substantially covers the backside of the susceptor plate. In some embodiments, the substrate support is disposed in a process chamber having at least some lamps disposed below the supporting member and utilized for heating the back side of the susceptor plate.

摘要翻译： 本文提供了提供改善的基板的方位角热均匀性的方法和装置。 在一些实施例中，用于半导体处理室的衬底支撑件包括基座板; 以及支撑构件，其支撑靠近其外边缘的基座板的背面，其中支撑构件基本上覆盖基座板的背面。 在一些实施例中，衬底支撑件设置在具有至少一些设置在支撑构件下方并用于加热感受板的背面的灯的处理室中。

公开(公告)号：US20080245767A1

公开(公告)日：2008-10-09

申请号：US11480134

申请日：2006-06-30

申请人： Yihwan Kim ,  Jean R. Vatus ,  Lori D. Washington ,  Arkadii Samoilov ,  Ali Zojaji

发明人： Yihwan Kim ,  Jean R. Vatus ,  Lori D. Washington ,  Arkadii Samoilov ,  Ali Zojaji

IPC分类号： H01L21/306

CPC分类号： C23C16/0236 ,  C30B25/02 ,  C30B29/52

摘要： A method for processing a substrate including a pre-cleaning etch and reduced pressure process is disclosed. The pre-cleaning process involves introducing a substrate into a processing chamber; flowing an etching gas into the processing chamber; processing at least a portion of the substrate with the etching gas to remove a contaminated or damaged layer from a substrate surface; stopping flow of the etching gas; evacuating the processing chamber to achieve a reduced pressure in the chamber; and processing the substrate surface at the reduced pressure. Epitaxial deposition is then used to form an epitaxial layer on the substrate surface.

摘要翻译： 公开了一种用于处理包括预清洗蚀刻和减压工艺的衬底的方法。 预清洗过程包括将衬底引入处理室; 使蚀刻气体流入处理室; 用蚀刻气体处理至少一部分基板以从基板表面去除污染或损坏的层; 停止蚀刻气体的流动; 排空处理室以在室中实现减压; 并在减压下处理衬底表面。 然后使用外延沉积在衬底表面上形成外延层。

公开(公告)号：US09058988B2

公开(公告)日：2015-06-16

申请号：US12717266

申请日：2010-03-04

申请人： Jean R. Vatus ,  Jinsong Tang ,  Yihwan Kim ,  Satheesh Kuppurao ,  Errol Sanchez

发明人： Jean R. Vatus ,  Jinsong Tang ,  Yihwan Kim ,  Satheesh Kuppurao ,  Errol Sanchez

IPC分类号： H01L21/00 ,  H01L21/02 ,  C23C16/02 ,  C23C16/24

CPC分类号： H01L21/02538 ,  C23C16/0245 ,  C23C16/24 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02661

摘要： Methods of depositing layers having reduced interfacial contamination are disclosed herein. The inventive methods may advantageously reduce contamination at the interface between deposited layers, for example, between a deposited layer and an underlying substrate or film. In some embodiments, a method of depositing a layer may include annealing a silicon-containing layer having a first layer disposed thereon in a reducing atmosphere; removing the first layer using an etching process to expose the silicon-containing layer after annealing; and depositing a second layer on the exposed silicon-containing layer.

摘要翻译： 本文公开了沉积具有减小的界面污染的层的方法。 本发明的方法可以有利地减少沉积层之间的界面处的污染，例如沉积层和下面的基底或膜之间的污染。 在一些实施例中，沉积层的方法可以包括在还原气氛中退火其上设置有第一层的含硅层; 使用蚀刻工艺除去第一层，以在退火后露出含硅层; 以及在暴露的含硅层上沉积第二层。

公开(公告)号：US08398777B2

公开(公告)日：2013-03-19

申请号：US12238921

申请日：2008-09-26

申请人： Richard O. Collins ,  Kailash Kiran Patalay ,  Jean R. Vatus ,  Zhepeng Cong

发明人： Richard O. Collins ,  Kailash Kiran Patalay ,  Jean R. Vatus ,  Zhepeng Cong

IPC分类号： C23C16/00 ,  C23C16/50 ,  C23F1/00 ,  H01L21/306

CPC分类号： H01L21/68 ,  C30B25/12 ,  H01L21/67259 ,  H01L21/68785 ,  H01L21/68792

摘要： A pedestal positioning assembly system for use in a substrate processing system includes a pedestal rigidly attached to a pedestal shaft, a reference rigidly attached to the substrate processing system, a lateral adjustment assembly to adjust a lateral location of the pedestal relative to the reference, and a vertical adjustment assembly to adjust a tilt of the pedestal relative to the reference. The lateral adjustment assembly and the vertical adjustment assembly are external to a processing chamber and are coupled to the pedestal disposed within the processing chamber through the pedestal shaft. The reference can be a ring and the lateral adjustment assembly substantially centers the pedestal within the ring. A method of adjusting a pedestal includes leveling the pedestal, translating the pedestal, calibrating the pedestal height to a preheat ring level, and checking the level and location of the pedestal while rotating the pedestal.

摘要翻译： 用于基板处理系统的基座定位组件系统包括刚性地连接到基座轴的基座，刚性地附接到基板处理系统的基准，横向调整组件，用于调节基座相对于基准的横向位置，以及 垂直调节组件，用于调节基座相对于基准的倾斜。 横向调节组件和垂直调节组件位于处理室的外部，并且通过基座轴联接到设置在处理室内的基座。 参考可以是环，并且横向调节组件使基座在环内基本上居中。 一种调节基座的方法包括调平基座，平移基座，将基座高度校准到预热环水平面，以及在旋转基座时检查基座的水平和位置。