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公开(公告)号:US08703568B2
公开(公告)日:2014-04-22
申请号:US13359125
申请日:2012-01-26
IPC分类号: H01L21/336
CPC分类号: H01L29/66659 , H01L21/26506 , H01L21/26586 , H01L21/823807 , H01L21/823814 , H01L21/823878 , H01L21/823892 , H01L29/1045 , H01L29/105 , H01L29/1083 , H01L29/36 , H01L29/78612 , H01L29/78654
摘要: The present invention is a method for forming super steep doping profiles in MOS transistor structures. The method comprises forming a carbon containing layer (110) beneath the gate dielectric (50) and source and drain regions (80) of a MOS transistor. The carbon containing layer (110) will prevent the diffusion of dopants into the region (40) directly beneath the gate dielectric layer (50).
摘要翻译: 本发明是一种用于在MOS晶体管结构中形成超陡掺杂分布的方法。 该方法包括在栅极电介质(50)下面形成含碳层(110),并在MOS晶体管的源极和漏极区域(80)形成。 含碳层(110)将防止掺杂剂扩散到栅极电介质层(50)正下方的区域(40)中。
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公开(公告)号:US07064399B2
公开(公告)日:2006-06-20
申请号:US09948856
申请日:2001-09-07
IPC分类号: H01L31/119
CPC分类号: H01L29/66659 , H01L21/26506 , H01L21/26586 , H01L21/823807 , H01L21/823814 , H01L21/823878 , H01L21/823892 , H01L29/1045 , H01L29/105 , H01L29/1083 , H01L29/36 , H01L29/78612 , H01L29/78654
摘要: The present invention is a method for forming super steep doping profiles in MOS transistor structures. The method comprises forming a carbon containing layer (110) beneath the gate dielectric (50) and source and drain regions (80) of a MOS transistor. The carbon containing layer (110) will prevent the diffusion of dopants into the region (40) directly beneath the gate dielectric layer (50).
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公开(公告)号:US20120164802A1
公开(公告)日:2012-06-28
申请号:US13359125
申请日:2012-01-26
IPC分类号: H01L21/336 , H01L21/265
CPC分类号: H01L29/66659 , H01L21/26506 , H01L21/26586 , H01L21/823807 , H01L21/823814 , H01L21/823878 , H01L21/823892 , H01L29/1045 , H01L29/105 , H01L29/1083 , H01L29/36 , H01L29/78612 , H01L29/78654
摘要: The present invention is a method for forming super steep doping profiles in MOS transistor structures. The method comprises forming a carbon containing layer (110) beneath the gate dielectric (50) and source and drain regions (80) of a MOS transistor. The carbon containing layer (110) will prevent the diffusion of dopants into the region (40) directly beneath the gate dielectric layer (50).
摘要翻译: 本发明是一种用于在MOS晶体管结构中形成超陡掺杂分布的方法。 该方法包括在栅极电介质(50)下面形成含碳层(110),并在MOS晶体管的源极和漏极区域(80)形成。 含碳层(110)将防止掺杂剂扩散到栅极电介质层(50)正下方的区域(40)中。
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公开(公告)号:US07199430B2
公开(公告)日:2007-04-03
申请号:US11362908
申请日:2006-02-28
IPC分类号: H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119
CPC分类号: H01L29/66659 , H01L21/26506 , H01L21/26586 , H01L21/823807 , H01L21/823814 , H01L21/823878 , H01L21/823892 , H01L29/1045 , H01L29/105 , H01L29/1083 , H01L29/36 , H01L29/78612 , H01L29/78654
摘要: The present invention is a method for forming super steep doping profiles in MOS transistor structures. The method comprises forming a carbon containing layer (110) beneath the gate dielectric (50) and source and drain regions (80) of a MOS transistor. The carbon containing layer (110) will prevent the diffusion of dopants into the region (40) directly beneath the gate dielectric layer (50).
摘要翻译: 本发明是一种用于在MOS晶体管结构中形成超陡掺杂分布的方法。 该方法包括在栅极电介质(50)下面形成含碳层(110),并在MOS晶体管的源极和漏极区域(80)形成。 含碳层(110)将防止掺杂剂扩散到栅极电介质层(50)正下方的区域(40)中。
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公开(公告)号:US20110111553A1
公开(公告)日:2011-05-12
申请号:US13006224
申请日:2011-01-13
IPC分类号: H01L51/40
CPC分类号: H01L29/66659 , H01L21/26506 , H01L21/26586 , H01L21/823807 , H01L21/823814 , H01L21/823878 , H01L21/823892 , H01L29/1045 , H01L29/105 , H01L29/1083 , H01L29/36 , H01L29/78612 , H01L29/78654
摘要: The present invention is a method for forming super steep doping profiles in MOS transistor structures. The method comprises forming a carbon containing layer (110) beneath the gate dielectric (50) and source and drain regions (80) of a MOS transistor. The carbon containing layer (110) will prevent the diffusion of dopants into the region (40) directly beneath the gate dielectric layer (50).
摘要翻译: 本发明是一种用于在MOS晶体管结构中形成超陡掺杂分布的方法。 该方法包括在栅极电介质(50)下面形成含碳层(110),并在MOS晶体管的源极和漏极区域(80)形成。 含碳层(110)将防止掺杂剂扩散到栅极电介质层(50)正下方的区域(40)中。
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公开(公告)号:US07883977B2
公开(公告)日:2011-02-08
申请号:US12356371
申请日:2009-01-20
IPC分类号: H01L21/336
CPC分类号: H01L29/66659 , H01L21/26506 , H01L21/26586 , H01L21/823807 , H01L21/823814 , H01L21/823878 , H01L21/823892 , H01L29/1045 , H01L29/105 , H01L29/1083 , H01L29/36 , H01L29/78612 , H01L29/78654
摘要: The present invention is a method for forming super steep doping profiles in MOS transistor structures. The method comprises forming a carbon containing layer (110) beneath the gate dielectric (50) and source and drain regions (80) of a MOS transistor. The carbon containing layer (110) will prevent the diffusion of dopants into the region (40) directly beneath the gate dielectric layer (50).
摘要翻译: 本发明是一种用于在MOS晶体管结构中形成超陡掺杂分布的方法。 该方法包括在栅极电介质(50)下面形成含碳层(110),并在MOS晶体管的源极和漏极区域(80)形成。 含碳层(110)将防止掺杂剂扩散到栅极电介质层(50)正下方的区域(40)中。
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公开(公告)号:US20080132012A1
公开(公告)日:2008-06-05
申请号:US11928652
申请日:2007-10-30
IPC分类号: H01L21/8238
CPC分类号: H01L29/66659 , H01L21/26506 , H01L21/26586 , H01L21/823807 , H01L21/823814 , H01L21/823878 , H01L21/823892 , H01L29/1045 , H01L29/105 , H01L29/1083 , H01L29/36 , H01L29/78612 , H01L29/78654
摘要: The present invention is a method for forming super steep doping profiles in MOS transistor structures. The method comprises forming a carbon containing layer (110) beneath the gate dielectric (50) and source and drain regions (80) of a MOS transistor. The carbon containing layer (110) will prevent the diffusion of dopants into the region (40) directly beneath the gate dielectric layer (50).
摘要翻译: 本发明是一种用于在MOS晶体管结构中形成超陡掺杂分布的方法。 该方法包括在栅极电介质(50)下面形成含碳层(110),并在MOS晶体管的源极和漏极区域(80)形成。 含碳层(110)将防止掺杂剂扩散到栅极电介质层(50)正下方的区域(40)中。
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公开(公告)号:US08129246B2
公开(公告)日:2012-03-06
申请号:US13006224
申请日:2011-01-13
IPC分类号: H01L21/336
CPC分类号: H01L29/66659 , H01L21/26506 , H01L21/26586 , H01L21/823807 , H01L21/823814 , H01L21/823878 , H01L21/823892 , H01L29/1045 , H01L29/105 , H01L29/1083 , H01L29/36 , H01L29/78612 , H01L29/78654
摘要: The present invention is a method for forming super steep doping profiles in MOS transistor structures. The method comprises forming a carbon containing layer (110) beneath the gate dielectric (50) and source and drain regions (80) of a MOS transistor. The carbon containing layer (110) will prevent the diffusion of dopants into the region (40) directly beneath the gate dielectric layer (50).
摘要翻译: 本发明是一种用于在MOS晶体管结构中形成超陡掺杂分布的方法。 该方法包括在栅极电介质(50)下面形成含碳层(110),并在MOS晶体管的源极和漏极区域(80)形成。 含碳层(110)将防止掺杂剂扩散到栅极电介质层(50)正下方的区域(40)中。
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公开(公告)号:US07655523B2
公开(公告)日:2010-02-02
申请号:US11928652
申请日:2007-10-30
IPC分类号: H01L21/336
CPC分类号: H01L29/66659 , H01L21/26506 , H01L21/26586 , H01L21/823807 , H01L21/823814 , H01L21/823878 , H01L21/823892 , H01L29/1045 , H01L29/105 , H01L29/1083 , H01L29/36 , H01L29/78612 , H01L29/78654
摘要: The present invention is a method for forming super steep doping profiles in MOS transistor structures. The method comprises forming a carbon containing layer (110) beneath the gate dielectric (50) and source and drain regions (80) of a MOS transistor. The carbon containing layer (110) will prevent the diffusion of dopants into the region (40) directly beneath the gate dielectric layer (50).
摘要翻译: 本发明是一种用于在MOS晶体管结构中形成超陡掺杂分布的方法。 该方法包括在栅极电介质(50)下面形成含碳层(110),并在MOS晶体管的源极和漏极区域(80)形成。 含碳层(110)将防止掺杂剂扩散到栅极电介质层(50)正下方的区域(40)中。
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公开(公告)号:US20090130805A1
公开(公告)日:2009-05-21
申请号:US12356371
申请日:2009-01-20
IPC分类号: H01L21/336 , H01L21/265
CPC分类号: H01L29/66659 , H01L21/26506 , H01L21/26586 , H01L21/823807 , H01L21/823814 , H01L21/823878 , H01L21/823892 , H01L29/1045 , H01L29/105 , H01L29/1083 , H01L29/36 , H01L29/78612 , H01L29/78654
摘要: The present invention is a method for forming super steep doping profiles in MOS transistor structures. The method comprises forming a carbon containing layer (110) beneath the gate dielectric (50) and source and drain regions (80) of a MOS transistor. The carbon containing layer (110) will prevent the diffusion of dopants into the region (40) directly beneath the gate dielectric layer (50).
摘要翻译: 本发明是一种用于在MOS晶体管结构中形成超陡掺杂分布的方法。 该方法包括在栅极电介质(50)下面形成含碳层(110),并在MOS晶体管的源极和漏极区域(80)形成。 含碳层(110)将防止掺杂剂扩散到栅极电介质层(50)正下方的区域(40)中。
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