公开(公告)号：US07704876B2

公开(公告)日：2010-04-27

申请号：US11847657

申请日：2007-08-30

申请人： Jeffrey Gambino ,  Edward Cooney, III ,  Anthony Stamper ,  William Thomas Motsiff ,  Michael Lane ,  Andrew Simon

发明人： Jeffrey Gambino ,  Edward Cooney, III ,  Anthony Stamper ,  William Thomas Motsiff ,  Michael Lane ,  Andrew Simon

IPC分类号： H01L21/4763

CPC分类号： H01L21/76811 ,  H01L21/76807 ,  H01L21/76808 ,  H01L21/76813 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76865 ,  H01L21/76877 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： Methods are disclosed for forming dual damascene back-end-of-line (BEOL) interconnect structures using materials for the vias or studs which are different from those used for the line conductors, or using materials for the via liner which are different from those used for the trench liner, or having a via liner thickness different from that of the trench liner. Preferably, a thick refractory metal is used in the vias for improved mechanical strength while using only a thin refractory metal in the trenches to provide low resistance.

摘要翻译： 公开了用于形成双镶嵌后端（BEOL）互连结构的方法，其使用与用于线路导体的那些不同的通孔或螺柱的材料，或者使用不同于所使用的通孔衬垫的材料 用于沟槽衬垫，或者具有不同于沟槽衬套的通孔衬垫厚度。 优选地，在通孔中使用厚的难熔金属以改善机械强度，同时仅在沟槽中使用薄的难熔金属来提供低电阻。

公开(公告)号：US07300867B2

公开(公告)日：2007-11-27

申请号：US11174985

申请日：2005-07-05

申请人： Jeffrey Gambino ,  Edward Cooney, III ,  Anthony Stamper ,  William Thomas Motsiff ,  Michael Lane ,  Andrew Simon

发明人： Jeffrey Gambino ,  Edward Cooney, III ,  Anthony Stamper ,  William Thomas Motsiff ,  Michael Lane ,  Andrew Simon

IPC分类号： H01L21/4763

CPC分类号： H01L21/76811 ,  H01L21/76807 ,  H01L21/76808 ,  H01L21/76813 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76865 ,  H01L21/76877 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： Methods are disclosed for forming dual damascene back-end-of-line (BEOL) interconnect structures using materials for the vias or studs which are different from those used for the line conductors, or using materials for the via liner which are different from those used for the trench liner, or having a via liner thickness different from that of the trench liner. Preferably, a thick refractory metal is used in the vias for improved mechanical strength while using only a thin refractory metal in the trenches to provide low resistance.

摘要翻译： 公开了用于形成双镶嵌后端（BEOL）互连结构的方法，其使用与用于线路导体的那些不同的通孔或螺柱的材料，或者使用不同于所使用的通孔衬垫的材料 用于沟槽衬垫，或者具有不同于沟槽衬套的通孔衬垫厚度。 优选地，在通孔中使用厚的难熔金属以改善机械强度，同时仅在沟槽中使用薄的难熔金属来提供低电阻。

公开(公告)号：US06958540B2

公开(公告)日：2005-10-25

申请号：US10604026

申请日：2003-06-23

申请人： Jeffrey Gambino ,  Edward Cooney, III ,  Anthony Stamper ,  William Thomas Motsiff ,  Michael Lane ,  Andrew Simon

发明人： Jeffrey Gambino ,  Edward Cooney, III ,  Anthony Stamper ,  William Thomas Motsiff ,  Michael Lane ,  Andrew Simon

IPC分类号： H01L21/768 ,  H01L23/42 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L21/76811 ,  H01L21/76807 ,  H01L21/76808 ,  H01L21/76813 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76865 ,  H01L21/76877 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： Interconnect structures are disclosed for forming dual damascene back-end-of-line (BEOL) structure using materials for the vias or studs which are different from those used for the line conductors, or using materials for the via liner which are different from those used for the trench liner, or having a via liner thickness different from that of the trench liner. Preferably, a thick refractory metal is used in the vias for improved mechanical strength while using only a thin refractory metal in the trenches to provide low resistance.

摘要翻译： 公开了用于形成双镶嵌后端（BEOL）结构的互连结构，其使用与用于线路导体的那些不同的通孔或螺柱的材料，或者使用不同于所使用的通孔衬垫的材料 用于沟槽衬垫，或者具有不同于沟槽衬套的通孔衬垫厚度。 优选地，在通孔中使用厚的难熔金属以改善机械强度，同时仅在沟槽中使用薄的难熔金属来提供低电阻。

公开(公告)号：US20050167838A1

公开(公告)日：2005-08-04

申请号：US10707996

申请日：2004-01-30

申请人： Daniel Edelstein ,  Matthew Colburn ,  Edward Cooney ,  Timothy Dalton ,  John Fitzsimmons ,  Jeffrey Gambino ,  Elbert Huang ,  Michael Lane ,  Vincent McGahay ,  Lee Nicholson ,  Satyanarayana Nitta ,  Sampath Purushothaman ,  Sujatha Sankaran ,  Thomas Shaw ,  Andrew Simon ,  Anthony Stamper

发明人： Daniel Edelstein ,  Matthew Colburn ,  Edward Cooney ,  Timothy Dalton ,  John Fitzsimmons ,  Jeffrey Gambino ,  Elbert Huang ,  Michael Lane ,  Vincent McGahay ,  Lee Nicholson ,  Satyanarayana Nitta ,  Sampath Purushothaman ,  Sujatha Sankaran ,  Thomas Shaw ,  Andrew Simon ,  Anthony Stamper

IPC分类号： H01L21/033 ,  H01L21/302 ,  H01L21/311 ,  H01L21/4763 ,  H01L21/768 ,  H01L23/48 ,  H01L23/522 ,  H01L23/532 ,  H01L29/40

CPC分类号： B82Y30/00 ,  H01L21/0332 ,  H01L21/31111 ,  H01L21/31144 ,  H01L21/7682 ,  H01L21/76829 ,  H01L23/5222 ,  H01L23/53295 ,  H01L2924/0002 ,  Y10S438/947 ,  H01L2924/00

摘要： A method for manufacturing a structure includes providing a structure having an insulator layer with at least one interconnect and forming a sub lithographic template mask on the insulator layer. A selective etching step is used for etching the insulator layer through the sub lithographic template mask to form sub lithographic features near the at least one interconnect. A supra lithographic blocking mask may also be utilized. In another aspect, the method includes forming pinch off sections of sub lithographic size formed in a capping layer on the insulator layer. A semiconductor structure includes an insulator layer having at least one interconnect feature and at least one column formed in the insulator layer. A plurality of sub lithographic features formed on a top portion of the insulator layer and communicating with the at least one column is also provided. The plurality of sub lithographic features have a cross section or diameter less than any of the at least one column. A gap may be prohibited from forming on or near scribe lanes and vias

摘要翻译： 一种制造结构的方法包括提供具有至少一个互连的绝缘层的结构，并在绝缘体层上形成次光刻模板掩模。 选择性蚀刻步骤用于通过子光刻模板掩模蚀刻绝缘体层，以在至少一个互连附近形成亚光刻特征。 还可以使用超光刻阻挡掩模。 另一方面，该方法包括形成在绝缘体层上的覆盖层中形成的亚光刻尺寸的夹断部分。 半导体结构包括具有至少一个互连特征的绝缘体层和形成在绝缘体层中的至少一个列。 还提供了形成在绝缘体层的顶部并与至少一个柱连通的多个次级光刻特征。 所述多个亚光刻特征具有小于或小于所述至少一列中的任何一个的横截面或直径。 可能禁止在划线车道和通道上或附近形成间隙

公开(公告)号：US20080026566A1

公开(公告)日：2008-01-31

申请号：US11847657

申请日：2007-08-30

申请人： Jeffrey Gambino ,  Edward Cooney ,  Anthony Stamper ,  William Motsiff ,  Michael Lane ,  Andrew Simon

发明人： Jeffrey Gambino ,  Edward Cooney ,  Anthony Stamper ,  William Motsiff ,  Michael Lane ,  Andrew Simon

IPC分类号： H01L21/4763

CPC分类号： H01L21/76811 ,  H01L21/76807 ,  H01L21/76808 ,  H01L21/76813 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76865 ,  H01L21/76877 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： Methods are disclosed for forming dual damascene back-end-of-line (BEOL) interconnect structures using materials for the vias or studs which are different from those used for the line conductors, or using materials for the via liner which are different from those used for the trench liner, or having a via liner thickness different from that of the trench liner. Preferably, a thick refractory metal is used in the vias for improved mechanical strength while using only a thin refractory metal in the trenches to provide low resistance.

摘要翻译： 公开了用于形成双镶嵌后端（BEOL）互连结构的方法，其使用与用于线路导体的那些不同的通孔或螺柱的材料，或者使用不同于所使用的通孔衬垫的材料 用于沟槽衬垫，或者具有不同于沟槽衬套的通孔衬垫厚度。 优选地，在通孔中使用厚的难熔金属以改善机械强度，同时仅在沟槽中使用薄的难熔金属来提供低电阻。

公开(公告)号：US20050245068A1

公开(公告)日：2005-11-03

申请号：US11174985

申请日：2005-07-05

申请人： Jeffrey Gambino ,  Edward Cooney ,  Anthony Stamper ,  William Motsiff ,  Michael Lane ,  Andrew Simon

发明人： Jeffrey Gambino ,  Edward Cooney ,  Anthony Stamper ,  William Motsiff ,  Michael Lane ,  Andrew Simon

IPC分类号： H01L21/768 ,  H01L21/4763

CPC分类号： H01L21/76811 ,  H01L21/76807 ,  H01L21/76808 ,  H01L21/76813 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76865 ,  H01L21/76877 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： Methods are disclosed for forming dual damascene back-end-of-line (BEOL) interconnect structures using materials for the vias or studs which are different from those used for the line conductors, or using materials for the via liner which are different from those used for the trench liner, or having a via liner thickness different from that of the trench liner. Preferably, a thick refractory metal is used in the vias for improved mechanical strength while using only a thin refractory metal in the trenches to provide low resistance.

摘要翻译： 公开了用于形成双镶嵌后端（BEOL）互连结构的方法，其使用与用于线路导体的那些不同的通孔或螺柱的材料，或者使用不同于所使用的通孔衬垫的材料 用于沟槽衬垫，或者具有不同于沟槽衬套的通孔衬垫厚度。 优选地，在通孔中使用厚的难熔金属以改善机械强度，同时仅在沟槽中使用薄的难熔金属来提供低电阻。

公开(公告)号：US20050208781A1

公开(公告)日：2005-09-22

申请号：US10708735

申请日：2004-03-22

申请人： John Fitzsimmons ,  Michael Lane ,  Vincent McGahay ,  Thomas Shaw ,  Anthony Stamper

发明人： John Fitzsimmons ,  Michael Lane ,  Vincent McGahay ,  Thomas Shaw ,  Anthony Stamper

IPC分类号： B05D1/02 ,  H01L21/78 ,  H01L23/00

CPC分类号： H01L23/562 ,  H01L21/78 ,  H01L2924/0002 ,  H01L2924/00

摘要： Methods of forming and the integrated circuit device structure formed having vertical interfaces adjacent an existing crack stop around a perimeter of a chip, whereby the vertical interface controls cracks generated during side processing of the device such as dicing, and in service from penetrating the crack stop. The vertical interface is comprised of a material that prevents cracks from damaging the crack stop by deflecting cracks away from penetrating the crack stop, or by absorbing the generated crack energies. Alternatively, the vertical interface may be a material that allows advancing cracks to lose enough energy such that they become incapable of penetrating the crack stop. The present vertical interfaces can be implemented in a number of ways such as, vertical spacers of release material, vertical trenches of release material or vertical channels of the release material.

摘要翻译： 形成方法和集成电路器件结构形成，具有与现有裂纹相邻的垂直接口围绕芯片的周边，由此垂直接口控制器件的侧面处理期间产生的裂纹，例如切割，并且在穿透裂纹停止 。 垂直界面由防止裂纹破坏裂纹的材料组成，通过使裂纹偏离穿透裂缝，或通过吸收所产生的裂纹能量来防止裂纹破裂。 或者，垂直界面可以是允许前进裂纹失去足够的能量使得它们不能穿透裂缝停止的材料。 现有的垂直接口可以以多种方式实现，例如释放材料的垂直间隔物，释放材料的垂直沟槽或释放材料的垂直通道。

公开(公告)号：US20080066468A1

公开(公告)日：2008-03-20

申请号：US11898679

申请日：2007-09-14

申请人： Les Faulder ,  Mario Abreu ,  Ram Srinivasan ,  Michael Lane

发明人： Les Faulder ,  Mario Abreu ,  Ram Srinivasan ,  Michael Lane

IPC分类号： F02C1/00

CPC分类号： F23R3/002 ,  F23R3/10 ,  F23R3/283 ,  F23R2900/03044

摘要： A splash plate dome assembly for a combustion liner of a turbine engine is disclosed. The splash plate may include an outer periphery having a plurality of corners and an inner periphery defining an aperture and an annular flange. The splash plate may include a plurality of first flow guides extending from the outer periphery to the inner periphery. The splash plate may further include a plurality of second flow guides extending from the outer periphery to a location intermediate the inner periphery and the outer periphery. The splash plate, annular flange, first flow guides, and second flow guides may be integrally formed by casting. The splash plate may be mounted to a combustion dome having a plurality of distributed through holes for forming impingement jets on an upstream face of the splash plate.

摘要翻译： 公开了一种用于涡轮发动机的燃烧衬套的飞溅板圆顶组件。 溅溅板可以包括具有多个拐角的外周边和限定孔的内周边和环形凸缘。 溅溅板可以包括从外周延伸到内周的多个第一流动引导件。 溅溅板还可以包括多个第二流动引导件，该第二流动引导件从外周边延伸到内周边和外周边之间的位置。 溅溅板，环形凸缘，第一流动引导件和第二流动引导件可以通过铸造一体地形成。 飞溅板可以安装到具有多个分布通孔的燃烧穹顶上，用于在飞溅板的上游面上形成冲击射流。

公开(公告)号：US20060264036A1

公开(公告)日：2006-11-23

申请号：US11491816

申请日：2006-07-24

申请人： Shyng-Tsong Chen ,  Stefanie Chiras ,  Matthew Colburn ,  Tomothy Dalton ,  Jeffrey Hedrick ,  Elbert Huang ,  Kaushik Kumar ,  Michael Lane ,  Kelly Malone ,  Chandrasekhar Narayan ,  Satyanarayana Nitta ,  Sampath Purushothaman ,  Robert Rosenberg ,  Christy Tyberg ,  Roy Yu

发明人： Shyng-Tsong Chen ,  Stefanie Chiras ,  Matthew Colburn ,  Tomothy Dalton ,  Jeffrey Hedrick ,  Elbert Huang ,  Kaushik Kumar ,  Michael Lane ,  Kelly Malone ,  Chandrasekhar Narayan ,  Satyanarayana Nitta ,  Sampath Purushothaman ,  Robert Rosenberg ,  Christy Tyberg ,  Roy Yu

IPC分类号： H01L21/4763

CPC分类号： H01L21/7682 ,  H01L21/76829 ,  H01L23/5222 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： In a multilevel microelectronic integrated circuit, air comprises permanent line level dielectric and ultra low-K materials are via level dielectric. The air is supplied to line level subsequent to removal of sacrificial material by clean thermal decomposition and assisted diffusion of byproducts through porosities in the IC structure. Optionally, air is also included within porosities in the via level dielectric. By incorporating air to the extent produced in the invention, intralevel and interlevel dielectric values are minimized.

摘要翻译： 在多电平微电子集成电路中，空气包括永久线路电介质，超低K材料通过电介质。 在通过清洁热分解除去牺牲材料并通过IC结构中的孔隙率辅助副产物扩散后，将空气供应到线路电平。 任选地，空气也包括在通孔级电介质中的孔隙中。 通过将空气结合到本发明产生的程度，使层内和层间介电值最小化。

公开(公告)号：US20060165891A1

公开(公告)日：2006-07-27

申请号：US11132108

申请日：2005-05-18

申请人： Daniel Edelstein ,  Stephen Gates ,  Alfred Grill ,  Michael Lane ,  Qinghuang Lin ,  Robert Miller ,  Deborah Neumayer ,  Son Nguyen

发明人： Daniel Edelstein ,  Stephen Gates ,  Alfred Grill ,  Michael Lane ,  Qinghuang Lin ,  Robert Miller ,  Deborah Neumayer ,  Son Nguyen

IPC分类号： C23C16/00 ,  B05D3/00

CPC分类号： H01L31/103 ,  Y10T428/31663

摘要： A low-k dielectric material with increased cohesive strength for use in electronic structures including interconnect and sensing structures is provided that includes atoms of Si, C, O, and H in which a fraction of the C atoms are bonded as Si—CH3 functional groups, and another fraction of the C atoms are bonded as Si—R—Si, wherein R is phenyl, —[CH2]n— where n is greater than or equal to 1, HC═CH, C≡CH2, C≡C or a [S]n linkage, where n is a defined above.

摘要翻译： 提供了一种用于包括互连和感测结构的电子结构中具有增强的内聚强度的低k介电材料，其包括Si，C，O和H的原子，其中C原子的一部分键合为Si-CH _{3个官能团，另外一部分C原子键合为Si-R-Si，其中R是苯基， - [CH 2 N] - 其中n大于或等于1，HC-CH，C≡CH2，C≡C或[S] n N连接，其中n是定义的 以上。}