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公开(公告)号：US5206117A
公开(公告)日：1993-04-27
申请号：US850623
申请日：1992-03-13
IPC分类号： G03F7/004 , G03F7/038 , G03F7/039 , G03F7/38 , H01L21/027
CPC分类号： G03F7/0387 , G03F7/0045 , Y10S430/107 , Y10S430/109 , Y10S430/12
摘要： The present invention relates to photosensitive negative and positive tone compositions for imagewise deposition of polyimide on a substrate.
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2.发明授权Process for imaging of photoresist including treatment of the photoresist with an organometallic compound 失效用于光刻胶成像的方法，包括用有机金属化合物处理光致抗蚀剂
公开(公告)号：US5250395A
公开(公告)日：1993-10-05
申请号：US735420
申请日：1991-07-25
申请人： Robert D. Allen , Scott A. MacDonald , Dennis R. McKean , Hubert Schlosser , Robert J. Twieg , Gregory M. Wallraff , Carlton G. Willson
发明人： Robert D. Allen , Scott A. MacDonald , Dennis R. McKean , Hubert Schlosser , Robert J. Twieg , Gregory M. Wallraff , Carlton G. Willson
摘要： The present invention relates to a process for negative tone imaging of photoresist to improve resolution of lithographic patterns.
摘要翻译： 本发明涉及光刻胶的负色调成像方法，以提高光刻图案的分辨率。
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公开(公告)号：US07875408B2
公开(公告)日：2011-01-25
申请号：US11698182
申请日：2007-01-25
申请人： John A. Hoffnagle , David R. Medeiros , Robert D. Miller , Libor Vycklicky , Gregory M. Wallraff
发明人： John A. Hoffnagle , David R. Medeiros , Robert D. Miller , Libor Vycklicky , Gregory M. Wallraff
CPC分类号： G03F7/091 , G03F7/0382 , G03F7/0392 , Y10S430/106 , Y10S430/146
摘要： Compositions comprising photobleachable organic materials can be bleached by 193 nm light, and brought back to their original state by stimuli after exposure. (reversible photobleaching). We use these compositions in art-known contrast enhancement layers and as a part of a photoresist, especially in optical lithography processes for semiconductor fabrication. They may comprise polymers such as organo-silicon polymers, polymers comprising polymers of aromatic hydroxyl compounds such as phenol and naphthol such as phenol formaldehyde polymers and naphthol formaldehyde polymers styrene polymers and phenolic acrylate polymers or cyclic materials comprising: where the radicals “R” and “Y” represent organo, or substituted organo moieties, Structures I, II, and III represent basic organic skeletons and can be unsubstituted or substituted in any available position with any one or combinations of multiple substituents.
摘要翻译： 包含可光漂白有机材料的组合物可以用193nm的光漂白，并且在曝光后通过刺激使其恢复到其初始状态。 （可逆光漂白）。 我们将这些组合物用于本领域已知的对比增强层和作为光致抗蚀剂的一部分，特别是在用于半导体制造的光刻工艺中。 它们可以包括聚合物，例如有机硅聚合物，包含芳族羟基化合物如苯酚和萘酚的聚合物的聚合物，例如苯酚甲醛聚合物和萘酚甲醛聚合物苯乙烯聚合物和酚醛丙烯酸酯聚合物或环状材料，其包括：其中基团“R”和 “Y”表示有机或取代的有机部分，结构I，II和III表示碱性有机骨架，并且可以在任何可用位置被未取代或被任何一个或多个取代基的组合取代。
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公开(公告)号：US5045431A
公开(公告)日：1991-09-03
申请号：US656103
申请日：1991-02-13
IPC分类号： G03F7/039
CPC分类号： G03F7/039 , Y10S430/111
摘要： A new polymer family is shown for use in high speed photoresists. A dry film photoresist includes a polymer binder prepared from t-butyl methacrylate/methylmethacrylate/acrylic acid/ethyl acrylate and a suitable initiator.
摘要翻译： 新的聚合物系列被用于高速光刻胶。 干膜光致抗蚀剂包括由甲基丙烯酸叔丁酯/甲基丙烯酸甲酯/丙烯酸/丙烯酸乙酯和合适的引发剂制备的聚合物粘合剂。
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公开(公告)号：US5071730A
公开(公告)日：1991-12-10
申请号：US656105
申请日：1991-02-13
IPC分类号： G03F7/039
CPC分类号： G03F7/039 , Y10S430/111
摘要： A new polymer family is shown for use in high sensitivity, high resolution photoresists. A liquid apply resist includes a polymer binder of t-butyl methacrylate/methylmethacrylate/methacrylic acid and an initiator which generates acid upon exposure to radiation.
摘要翻译： 新的聚合物系列显示用于高灵敏度，高分辨率的光致抗蚀剂。 液体涂覆抗蚀剂包括甲基丙烯酸叔丁酯/甲基丙烯酸甲酯/甲基丙烯酸的聚合物粘合剂和在暴露于辐射时产生酸的引发剂。
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公开(公告)号：US5055439A
公开(公告)日：1991-10-08
申请号：US458048
申请日：1989-12-27
申请人： Robert D. Allen , William D. Hinsberg, III. , Logan L. Simpson , Robert J. Twieg , Gregory M. Wallraff , Carlton G. Willson
发明人： Robert D. Allen , William D. Hinsberg, III. , Logan L. Simpson , Robert J. Twieg , Gregory M. Wallraff , Carlton G. Willson
IPC分类号： C08F8/00 , C08G59/00 , C08G59/18 , C08G59/68 , G03C1/675 , G03F7/004 , G03F7/031 , G03F7/039 , H01L21/027
CPC分类号： G03F7/031
摘要： A composition including an initiator which generates acid upon exposure to radiation in the presence of a sensitizer. The composition may be mixed with an acid sensitive polymer or prepolymer to make a visible light or laser imageable photoresist. The sensitizer has phenylethynyl and methoxy substituents which, when properly positioned, allow it to utilize all of the visible argon ion laser lines.
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公开(公告)号：US08614047B2
公开(公告)日：2013-12-24
申请号：US13219599
申请日：2011-08-26
CPC分类号： C07C55/08 , C07C55/12 , C07C55/14 , C07C55/32 , C07C59/21 , C07C59/245 , C07C59/295 , C07C59/315 , C07C59/347 , C07C229/24 , C07D241/04 , G03F7/0045 , G03F7/0046 , G03F7/0397
摘要： Provided are novel symmetrical and asymmetrical bifunctional photodecomposable bases (PDBs) with dicarboxylate anion groups that show increased imaging performance. Also provided are photoresist compositions prepared with the bifunctional dicarboxylated PDBs and lithography methods that use the photoresist compositions of the present invention.
摘要翻译： 提供了具有显示增加的成像性能的具有二羧酸阴离子基团的新颖的对称和不对称双功能可光分解碱（PDB）。 还提供了使用双功能二羧酸化PDB制备的光致抗蚀剂组合物和使用本发明的光致抗蚀剂组合物的光刻方法。
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公开(公告)号：US07951524B2
公开(公告)日：2011-05-31
申请号：US12023108
申请日：2008-01-31
申请人： Robert Allen , Phillip Brock , Shiro Kusumoto , Yukio Nishimura , Daniel P. Sanders , Mark Steven Slezak , Ratnam Sooriyakumaran , Linda K. Sundberg , Hoa Trung , Gregory M. Wallraff
发明人： Robert Allen , Phillip Brock , Shiro Kusumoto , Yukio Nishimura , Daniel P. Sanders , Mark Steven Slezak , Ratnam Sooriyakumaran , Linda K. Sundberg , Hoa Trung , Gregory M. Wallraff
CPC分类号： G03F7/2041 , C08F220/22 , G03F7/0046 , G03F7/0397 , G03F7/11 , Y10S430/108 , Y10S430/111
摘要： Photoresist additive polymers and photoresist formulations that can be used in immersion lithography without the use of an additional topcoat. The resist compositions include a photoresist polymer, at least one photoacid generator, a solvent; and a photoresist additive polymer. Also a method of forming using photoresist formulations including photoresist additive polymers.
摘要翻译： 光刻胶添加剂聚合物和光致抗蚀剂制剂，可用于浸没式光刻，而不使用额外的面漆。 抗蚀剂组合物包括光致抗蚀剂聚合物，至少一种光致酸产生剂，溶剂; 和光致抗蚀剂添加剂聚合物。 还有一种使用包括光致抗蚀剂添加剂聚合物的光致抗蚀剂制剂的方法。
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公开(公告)号：US07135595B2
公开(公告)日：2006-11-14
申请号：US11330659
申请日：2006-01-12
申请人： Robert David Allen , Gregory Breyta , Phillip Brock , Richard A. DiPietro , Debra Fenzel-Alexander , Carl Larson , David R. Medeiros , Dirk Pfeiffer , Ratnam Sooriyakumaran , Hoa D. Truong , Gregory M. Wallraff
发明人： Robert David Allen , Gregory Breyta , Phillip Brock , Richard A. DiPietro , Debra Fenzel-Alexander , Carl Larson , David R. Medeiros , Dirk Pfeiffer , Ratnam Sooriyakumaran , Hoa D. Truong , Gregory M. Wallraff
IPC分类号： C08F118/00 , C08F18/20 , C08F120/22 , C07C69/62 , C07C69/52
CPC分类号： C08F220/22 , C08F220/28 , G03F7/0046 , G03F7/0382 , Y10S430/108
摘要： A photoresist composition is provided that includes a polymer having at least one acrylate or methacrylate monomer having a formula where R1 represents hydrogen (H), a linear or branched alkyl group of 1 to 20 carbons, or a semi- or perfluorinated linear or branched alkyl group of 1 to 20 carbons; and where R2 represents an unsubstituted aliphatic group or a substituted aliphatic group having zero or one trifluoromethyl (CF3) group attached to each carbon of the substituted aliphatic group, or a substituted or unsubstituted aromatic group; and where R3 represents hydrogen (H), methyl (CH3), trifluoromethyl (CF3), difluoromethyl (CHF2), fluoromethyl (CH2F), or a semi- or perfluorinated aliphatic chain; and where R4 represents trifluoromethyl (CF3), difluoromethyl (CHF2), fluoromethyl (CH2F), or a semi- or perfluorinated substituted or unsubstituted aliphatic group. A method of patterning a substrate using the photoresist composition is also provided herein.
摘要翻译： 提供了一种光致抗蚀剂组合物，其包括具有至少一个具有下式的丙烯酸酯或甲基丙烯酸酯单体的聚合物，其中R 1表示氢（H），1至20个碳的直链或支链烷基或 1至20个碳的半或全氟化直链或支链烷基; 其中R 2表示未取代的脂族基团或具有与取代的脂族基团的每个碳上连接的具有0或1个三氟甲基（CF 3 N 3）基团的取代的脂族基团，或 取代或未取代的芳基; 其中R 3表示氢（H），甲基（CH 3），三氟甲基（CF 3），二氟甲基（CHF 2） （CH 2 CO 2），或半或全氟化脂族链; 并且其中R 4表示三氟甲基（CF 3 S），二氟甲基（CH 2）2，氟甲基（CH 2 CH 2） ）或半或全氟取代或未取代的脂族基团。 本文还提供了使用光致抗蚀剂组合物图案化衬底的方法。
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公开(公告)号：US5204226A
公开(公告)日：1993-04-20
申请号：US664260
申请日：1991-03-04
CPC分类号： G03F7/0754
摘要： The present invention relates to positive resist compositions comprising polysilanes and sulfosuccinimide photosensitizers and the use of these compositions in making integrated circuits.
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