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14 条记录 (耗时 0.023 秒)

    CPP head with parasitic shunting reduction
    1.
    发明授权
    CPP head with parasitic shunting reduction 有权
    CPP头与寄生分流减少

    公开(公告)号：US07279269B2

    公开(公告)日：2007-10-09

    申请号：US10734422

    申请日：2003-12-12

    申请人： Jeiwei Chang ,  Stuart Kao ,  Chao Peng Chen ,  Chunping Luo ,  Kochan Ju ,  Min Li

    发明人： Jeiwei Chang ,  Stuart Kao ,  Chao Peng Chen ,  Chunping Luo ,  Kochan Ju ,  Min Li

    IPC分类号： G11B5/39

    CPC分类号： G11B5/3163 ,  G11B5/398 ,  Y10T428/1171

    摘要： The series resistance of a CPP GMR stack can be reduced by shaping it into a small upper, on a somewhat larger, lower part. Because of the sub-micron dimensions involved, good alignment between these is normally difficult to achieve. The present invention discloses a self-alignment process based on first laying down a mask that will determine the shape of the top part. Ion beam etching is then initiated, the ion beam being initially applied from one side only at an angle to the surface normal. During etching, all material on the near side of the mask gets etched but, on the far side, only material that is outside the mask's shadow gets removed so, depending on the beam's angle, the size of the lower part is controlled and the upper part is precisely centrally aligned above it.

    摘要翻译： CPP GMR堆叠的串联电阻可以通过将其成形为较小的上部，在较小的较低部分上来减小。 由于涉及亚微米尺寸，这些之间的良好对准通常难以实现。 本发明公开了一种基于第一次铺设掩模的自对准过程，该掩模将确定顶部的形状。 然后开始离子束蚀刻，离子束最初仅从一侧以与表面法线成一定角度施加。 在蚀刻期间，掩模近侧的所有材料都被蚀刻，但在远侧，只有在掩模阴影之外的材料被去除，因此根据光束的角度，下部的尺寸被控制，并且上部 部分精确地集中在其上。

    CPP head with parasitic shunting reduction
    2.
    发明授权
    CPP head with parasitic shunting reduction 有权
    CPP头与寄生分流减少

    公开(公告)号：US07864490B2

    公开(公告)日：2011-01-04

    申请号：US11901584

    申请日：2007-09-18

    申请人： Jeiwei Chang ,  Stuart Kao ,  Chao Peng Chen ,  Chunping Luo ,  Kochan Ju ,  Min Li

    发明人： Jeiwei Chang ,  Stuart Kao ,  Chao Peng Chen ,  Chunping Luo ,  Kochan Ju ,  Min Li

    IPC分类号： G11B5/33

    CPC分类号： G11B5/3163 ,  G11B5/398 ,  Y10T428/1171

    摘要： The series resistance of a CPP GMR stack can be reduced by shaping it into a small upper, on a somewhat larger, lower part. Because of the sub-micron dimensions involved, good alignment between these is normally difficult to achieve. The present invention discloses a self-alignment process based on first laying down a mask that will determine the shape of the top part. Ion beam etching is then initiated, the ion beam being initially applied from one side only at an angle to the surface normal. During etching, all material on the near side of the mask gets etched but, on the far side, only material that is outside the mask's shadow gets removed so, depending on the beam's angle, the size of the lower part is controlled and the upper part is precisely centrally aligned above it.

    摘要翻译： CPP GMR堆叠的串联电阻可以通过将其成形为较小的上部，在较小的较低部分上来减小。 由于涉及亚微米尺寸，这些之间的良好对准通常难以实现。 本发明公开了一种基于第一次铺设掩模的自对准过程，该掩模将确定顶部的形状。 然后开始离子束蚀刻，离子束最初仅从一侧以与表面法线成一定角度施加。 在蚀刻期间，掩模近侧的所有材料都被蚀刻，但在远侧，只有在掩模阴影之外的材料被去除，因此根据光束的角度，下部的尺寸被控制，并且上部 部分精确地集中在其上。

    CPP head with parasitic shunting reduction
    3.
    发明申请
    CPP head with parasitic shunting reduction 有权
    CPP头与寄生分流减少

    公开(公告)号：US20080050615A1

    公开(公告)日：2008-02-28

    申请号：US11901584

    申请日：2007-09-18

    申请人： Jeiwei Chang ,  Stuart Kao ,  Chao Chen ,  Chunping Luo ,  Kochan Ju ,  Min Li

    发明人： Jeiwei Chang ,  Stuart Kao ,  Chao Chen ,  Chunping Luo ,  Kochan Ju ,  Min Li

    IPC分类号： G11B5/33

    CPC分类号： G11B5/3163 ,  G11B5/398 ,  Y10T428/1171

    摘要： The series resistance of a CPP GMR stack can be reduced by shaping it into a small upper, on a somewhat larger, lower part. Because of the sub-micron dimensions involved, good alignment between these is normally difficult to achieve. The present invention discloses a self-alignment process based on first laying down a mask that will determine the shape of the top part. Ion beam etching is then initiated, the ion beam being initially applied from one side only at an angle to the surface normal. During etching, all material on the near side of the mask gets etched but, on the far side, only material that is outside the mask's shadow gets removed so, depending on the beam's angle, the size of the lower part is controlled and the upper part is precisely centrally aligned above it.

    摘要翻译： CPP GMR堆叠的串联电阻可以通过将其成形为较小的上部，在较小的较低部分上来减小。 由于涉及亚微米尺寸，这些之间的良好对准通常难以实现。 本发明公开了一种基于第一次铺设掩模的自对准过程，该掩模将确定顶部的形状。 然后开始离子束蚀刻，离子束最初仅从一侧以与表面法线成一定角度施加。 在蚀刻期间，掩模近侧的所有材料都被蚀刻，但在远侧，只有在掩模阴影之外的材料被去除，因此根据光束的角度，下部的尺寸被控制，并且上部 部分精确地集中在其上。

    CPP head with parasitic shunting reduction
    4.
    发明申请
    CPP head with parasitic shunting reduction 有权
    CPP头与寄生分流减少

    公开(公告)号：US20050130070A1

    公开(公告)日：2005-06-16

    申请号：US10734422

    申请日：2003-12-12

    申请人： Jeiwei Chang ,  Stuart Kao ,  Chao Chen ,  Chunping Luo ,  Kochan Ju ,  Min Li

    发明人： Jeiwei Chang ,  Stuart Kao ,  Chao Chen ,  Chunping Luo ,  Kochan Ju ,  Min Li

    IPC分类号： G03F7/00 ,  G11B5/31 ,  G11B5/39

    CPC分类号： G11B5/3163 ,  G11B5/398 ,  Y10T428/1171

    摘要： The series resistance of a CPP GMR stack can be reduced by shaping it into a small upper, on a somewhat larger, lower part. Because of the sub-micron dimensions involved, good alignment between these is normally difficult to achieve. The present invention discloses a self-alignment process based on first laying down a mask that will determine the shape of the top part. Ion beam etching is then initiated, the ion beam being initially applied from one side only at an angle to the surface normal. During etching, all material on the near side of the mask gets etched but, on the far side, only material that is outside the mask's shadow gets removed so, depending on the beam's angle, the size of the lower part is controlled and the upper part is precisely centrally aligned above it.

    摘要翻译： CPP GMR堆叠的串联电阻可以通过将其成形为较小的上部，在较小的较低部分上来减小。 由于涉及亚微米尺寸，这些之间的良好对准通常难以实现。 本发明公开了一种基于第一次铺设掩模的自对准过程，该掩模将确定顶部的形状。 然后开始离子束蚀刻，离子束最初仅从一侧以与表面法线成一定角度施加。 在蚀刻期间，掩模近侧的所有材料都被蚀刻，但在远侧，只有在掩模阴影之外的材料被去除，因此根据光束的角度，下部的尺寸被控制，并且上部 部分精确地集中在其上。

    Method to form reduced dimension pattern with good edge roughness
    5.
    发明授权
    Method to form reduced dimension pattern with good edge roughness 失效
    形成具有良好边缘粗糙度的减小尺寸图案的方法

    公开(公告)号：US06905811B2

    公开(公告)日：2005-06-14

    申请号：US10420593

    申请日：2003-04-22

    申请人： Chao Peng Chen ,  Chunping Luo ,  Stuart Kao ,  Jei-Wei Chang

    发明人： Chao Peng Chen ,  Chunping Luo ,  Stuart Kao ,  Jei-Wei Chang

    IPC分类号： G03C5/00 ,  G03F7/00 ,  G03F7/30 ,  G03F7/38 ,  G03F7/40

    CPC分类号： G03F7/40 ,  G03F7/30 ,  G03F7/38

    摘要： As feature sizes approach 0.1 μm or smaller, reduction of line edge roughness (LER) becomes increasingly important. Significant reductions in edge roughness have been achieved by applying a second Ebeam exposure after the initial one that is used to define the pattern. After this second blanket exposure a longer heat treatment and a stronger development process than before are used. In addition to reducing edge roughness the disclosed treatment allows the CD to be reduced under tight control since the amount of CD reduction is proportional to the second Ebeam dosage.

    摘要翻译： 随着特征尺寸接近0.1μm或更小，线边缘粗糙度（LER）的减小变得越来越重要。 通过在用于限定图案的初始曝光之后施加第二次Ebeam曝光，已经实现了边缘粗糙度的显着降低。 在第二次曝光之后，使用比以前更长的热处理和更强的显影工艺。 除了减少边缘粗糙度之外，所公开的处理允许在紧密控制下CD降低，因为CD减少的量与第二Ebeam剂量成比例。