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1.
公开(公告)号:US20130025624A1
公开(公告)日:2013-01-31
申请号:US13546645
申请日:2012-07-11
申请人: Jeon-Ho Kim , Chul-Hwan Choi , Seung-Tae Lee , Yong-Gyu Lim , Kyung-Tae Kim , Jae-Min Kim
发明人: Jeon-Ho Kim , Chul-Hwan Choi , Seung-Tae Lee , Yong-Gyu Lim , Kyung-Tae Kim , Jae-Min Kim
IPC分类号: B08B7/00
CPC分类号: C23C16/4405
摘要: According to example embodiments, there is provided a method of cleaning a semiconductor device manufacturing apparatus. In the method, a fluorine-containing gas is provided into a chamber to clean a byproduct formed on a surface of a chamber during formation of a layer structure therein. A material is provided into the chamber to chemisorb the material on the surface of the chamber. The material is substantially similar to or the same as a source gas for forming the layer structure. A plasma is generated in the chamber, and the chamber is purged.
摘要翻译: 根据示例性实施例,提供了一种清洁半导体器件制造装置的方法。 在该方法中,在室内形成层状结构时,在室内设置含氟气体,以清洗形成在室的表面上的副产物。 将一种材料提供到腔室中以化学吸附腔室表面上的材料。 该材料基本上与形成层结构的源气体相似或相同。 在室中产生等离子体,并且室被清除。
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公开(公告)号:US20100275844A1
公开(公告)日:2010-11-04
申请号:US12768831
申请日:2010-04-28
申请人: Jeon-Ho Kim , Young-hoon Kim , Dae-Youn Kim
发明人: Jeon-Ho Kim , Young-hoon Kim , Dae-Youn Kim
IPC分类号: C23C16/00
CPC分类号: C23C16/4485 , C23C16/448
摘要: In a deposition apparatus according to an embodiment of the present invention, a buffer unit is provided between a vaporizer and a reactor of a vaporization supply system to temporarily store source gas, thus, before and when the source gas is supplied to the reactor, the variations of the internal pressure of the vaporizer can be reduced to supply the constant amount of source gas of to reaction spaces, thereby depositing a thin film having a uniform thin-film thickness.
摘要翻译: 在根据本发明的实施例的沉积设备中,缓冲单元设置在蒸发器和蒸发供应系统的反应器之间,以临时存储源气体,因此,在将源气体供应到反应器之前和之时, 可以减少蒸发器的内部压力的变化,以将恒定量的源气体供应到反应空间,从而沉积具有均匀薄膜厚度的薄膜。
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