公开(公告)号：US20090028725A1

公开(公告)日：2009-01-29

申请号：US12078869

申请日：2008-04-07

申请人： Jeong II Park ,  Jeong Hoon Kang ,  Ji Hoon Choi ,  Phil Soo Chang

发明人： Jeong II Park ,  Jeong Hoon Kang ,  Ji Hoon Choi ,  Phil Soo Chang

IPC分类号： F04B39/00

CPC分类号： F04B39/0061 ,  F04B39/0055 ,  F04B39/122 ,  F04B39/123

摘要： A hermetic compressor for adjusting the length and cross sectional area of a communication path as a refrigerant flow passage, so as to attenuate a discharge pulsation and consequently, a vibration and noise thereof. The hermetic compressor, which includes a cylinder head having a discharge chamber to discharge a compressed refrigerant and a discharge muffler to receive the refrigerant discharged from the discharge chamber, further includes a communication path to communicate the discharge chamber and the discharge muffler with each other, so as to allow the refrigerant to flow from the discharge chamber into the discharge muffler, and an auxiliary communication tube to increase a length of the communication path for increasing a refrigerant flow distance. The auxiliary communication path reduces the cross sectional area of a refrigerant flow passage while increasing a refrigerant flow distance, thereby attenuating a low-frequency component of the discharge pulsation.

摘要翻译： 一种密封压缩机，用于调节作为制冷剂流动通道的连通路径的长度和横截面面积，以便减少排出脉动，从而减轻其振动和噪声。 封闭式压缩机包括：具有排出压缩制冷剂的排出室的气缸盖和用于接收从排出室排出的制冷剂的排气消声器，还具有将排出室与排气消音器连通的连通路径， 以使制冷剂从排出室流入排放消音器，以及辅助连通管，以增加用于增加制冷剂流动距离的连通路径的长度。 辅助连通路径减小制冷剂流路的横截面积，同时增加制冷剂流动距离，从而衰减排出脉动的低频分量。

公开(公告)号：US20090120495A1

公开(公告)日：2009-05-14

申请号：US12081681

申请日：2008-04-18

申请人： Jeong II Park ,  Kook Min Han ,  Sang Yoon Lee ,  Eun Jeong Jeong

发明人： Jeong II Park ,  Kook Min Han ,  Sang Yoon Lee ,  Eun Jeong Jeong

IPC分类号： H01L31/0216 ,  C08F26/06 ,  C08F28/06 ,  C08F24/00 ,  H01L51/52

CPC分类号： H01L51/0043 ,  C08F24/00 ,  C08F26/06 ,  C08F28/06 ,  H01L51/0036 ,  H01L51/0038 ,  H01L51/0545 ,  Y02E10/549

摘要： Disclosed herein are an alternating copolymer of phenylene vinylene and oligoarylene vinylene, a preparation method thereof, and an organic thin film transistor including the same. The organic thin film transistor maintains low off-state leakage current and realizes a high on/off current ratio and high charge mobility because the organic active layer thereof is formed of an alternating copolymer of phenylene vinylene and oligoarylene vinylene.

摘要翻译： 本文公开了亚苯基亚乙烯基和低聚亚芳基亚乙烯基的交替共聚物，其制备方法和包括其的有机薄膜晶体管。 有机薄膜晶体管由于其有机活性层由亚苯基亚乙烯基和低聚亚芳基亚乙烯基的交替共聚物形成，因此保持低截止状态的漏电流并实现高导通/截止电流比和高电荷迁移率。

公开(公告)号：US20100065830A1

公开(公告)日：2010-03-18

申请号：US12379856

申请日：2009-03-03

申请人： Do Hwan Kim ,  Hyun Sik Moon ,  Byung Wook Yoo ,  Sang Yoon Lee ,  Bang Lin Lee ,  Jeong II Park ,  Eun Jeong Jeong

发明人： Do Hwan Kim ,  Hyun Sik Moon ,  Byung Wook Yoo ,  Sang Yoon Lee ,  Bang Lin Lee ,  Jeong II Park ,  Eun Jeong Jeong

IPC分类号： H01L51/30 ,  H01L51/40 ,  H01L21/26

CPC分类号： H01L51/0533

摘要： Disclosed herein are a method for fabricating an organic thin film transistor, including treating the surfaces of a gate insulating layer and source/drain electrodes with a self-assembled monolayer (SAM)-forming compound through a one-pot reaction, and an organic thin film transistor fabricated by the method. According to example embodiments, the surface-treatment of the gate insulating layer and the source/drain electrodes may be performed in a single vessel through a single process.

摘要翻译： 本文公开了一种用于制造有机薄膜晶体管的方法，包括通过一锅反应用自组装单层（SAM）形成化合物处理栅极绝缘层和源极/漏极的表面，以及有机薄膜 通过该方法制造的薄膜晶体管。 根据示例实施例，栅极绝缘层和源极/漏极的表面处理可以通过单个工艺在单个容器中进行。

公开(公告)号：US20080067504A1

公开(公告)日：2008-03-20

申请号：US11703247

申请日：2007-02-07

申请人： Jeong II Park ,  Jung Seok Han ,  Sang Yoon Lee ,  Eun Jeong Jeong ,  Kook Min Han

发明人： Jeong II Park ,  Jung Seok Han ,  Sang Yoon Lee ,  Eun Jeong Jeong ,  Kook Min Han

IPC分类号： H01L51/00 ,  C07F9/02

CPC分类号： H01L51/105 ,  C07F9/091 ,  C07F9/094 ,  C07F9/2408 ,  C07F9/2429 ,  H01L51/0075 ,  H01L51/0541 ,  H01L51/0545

摘要： Disclosed is an organic thin film transistor including a phosphate-based self-assembled monolayer and a method of manufacturing the same. Example embodiments relate to an organic thin film transistor, which may include a single bond type phosphate-based self-assembled monolayer without intermolecular cross-linking, between source/drain electrodes and an organic semiconductor layer, thus exhibiting improved electrical properties, e.g., increased charge mobility, and to a method of manufacturing the organic thin film transistor.

摘要翻译： 本发明公开了一种包含基于磷酸酯的自组装单层的有机薄膜晶体管及其制造方法。 示例性实施例涉及有机薄膜晶体管，其可以包括在源/漏电极和有机半导体层之间没有分子间交联的单键型磷酸基自组装单层，因此表现出改善的电性能，例如增加 电荷迁移率，以及制造有机薄膜晶体管的方法。