公开(公告)号：US08410497B2

公开(公告)日：2013-04-02

申请号：US12338438

申请日：2008-12-18

申请人： Sang Won Kang ,  Seong Ju Park ,  Joo Young Cho ,  Il Kyu Park ,  Yong Chun Kim ,  Dong Joon Kim ,  Jeong Tak Oh ,  Je Won Kim

发明人： Sang Won Kang ,  Seong Ju Park ,  Joo Young Cho ,  Il Kyu Park ,  Yong Chun Kim ,  Dong Joon Kim ,  Jeong Tak Oh ,  Je Won Kim

IPC分类号： H01L33/00

CPC分类号： H01L33/02 ,  H01L33/14 ,  H01L33/32 ,  H01L33/387 ,  H01L33/40 ,  H01L33/641

摘要： There is provided a semiconductor light emitting device that can easily dissipate heat, improve current spreading efficiency, and reduce defects by blocking dislocations occurring when a semiconductor layer is grown to thereby increase reliability. A semiconductor light emitting device including a substrate, a light emitting structure having an n-type semiconductor layer, an active layer, and a p-type semiconductor layer sequentially laminated, and an n-type electrode and a p-type electrode formed on the n-type semiconductor layer and the p-type semiconductor layer, respectively, according to an aspect of the invention may include: a metal layer formed in the n-type semiconductor layer and contacting the n-type electrode.

摘要翻译： 提供了一种半导体发光器件，其可以容易地散热，提高电流扩散效率，并且通过阻止半导体层生长时发生的位错从而降低可靠性，从而减少缺陷。 一种半导体发光器件，包括基板，依次层叠有n型半导体层，有源层和p型半导体层的发光结构，以及形成在所述n型半导体层上的n型电极和p型电极 n型半导体层和p型半导体层可以包括：形成在n型半导体层中并与n型电极接触的金属层。

公开(公告)号：US07999274B2

公开(公告)日：2011-08-16

申请号：US12618269

申请日：2009-11-13

申请人： Jeong Tak Oh ,  Yong Chun Kim

发明人： Jeong Tak Oh ,  Yong Chun Kim

IPC分类号： H01L33/00

CPC分类号： H01L33/50 ,  H01L2924/181 ,  H01L2924/00012

摘要： A white light emitting device is disclosed. The white light emitting device includes a blue light emitting diode (LED) including a plurality of active layers generating different peak wavelengths, and phosphors emitting yellow light when excited by light emitted from the blue LED. The white light emitting device ensures enhanced excitation efficiency of the phosphors, and high luminance.

摘要翻译： 公开了一种白色发光器件。 白色发光器件包括蓝色发光二极管（LED），其包括产生不同峰值波长的多个有源层，以及当从蓝色LED发射的光激发时发射黄色光的荧光体。 白色发光装置确保荧光体的增强的激发效率和高亮度。

公开(公告)号：US09166098B2

公开(公告)日：2015-10-20

申请号：US12338496

申请日：2008-12-18

申请人： Sang Won Kang ,  Seong Ju Park ,  Min Ki Kwon ,  Sang Jun Lee ,  Joo Young Cho ,  Yong Chun Kim ,  Sang Heon Han ,  Dong Ju Lee ,  Jeong Tak Oh ,  Je Won Kim

发明人： Sang Won Kang ,  Seong Ju Park ,  Min Ki Kwon ,  Sang Jun Lee ,  Joo Young Cho ,  Yong Chun Kim ,  Sang Heon Han ,  Dong Ju Lee ,  Jeong Tak Oh ,  Je Won Kim

IPC分类号： H01L33/00 ,  H01S5/30 ,  H01S5/00 ,  H01S5/32 ,  H01L33/06 ,  H01L33/02 ,  H01L33/32

CPC分类号： H01L33/06 ,  H01L33/025 ,  H01L33/32

摘要： There is provided a nitride semiconductor light emitting device including an active layer of a multi quantum well structure, the nitride semiconductor light emitting device including: a substrate; and a buffer layer, an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer sequentially stacked on the substrate, wherein the active layer is formed of a multi quantum well structure where a plurality of barrier layers and a plurality of well layers are arranged alternately with each other, and at least one of the plurality of barrier layers includes a first barrier layer including a p-doped barrier layer doped with a p-dopant and an undoped barrier layer.

摘要翻译： 提供了包括多量子阱结构的有源层的氮化物半导体发光器件，所述氮化物半导体发光器件包括：衬底; 以及依次层叠在所述基板上的缓冲层，n型氮化物半导体层，有源层和p型氮化物半导体层，其中，所述有源层由多个势垒层和 多个阱层彼此交替布置，并且多个势垒层中的至少一个包括第一阻挡层，其包括掺杂有p掺杂剂和未掺杂阻挡层的p掺杂势垒层。

公开(公告)号：US08129711B2

公开(公告)日：2012-03-06

申请号：US12171570

申请日：2008-07-11

申请人： Sang Won Kang ,  Yong Chun Kim ,  Dong Hyun Cho ,  Jeong Tak Oh ,  Dong Joon Kim

发明人： Sang Won Kang ,  Yong Chun Kim ,  Dong Hyun Cho ,  Jeong Tak Oh ,  Dong Joon Kim

IPC分类号： H01L29/06

CPC分类号： H01L33/0075 ,  H01L33/22 ,  H01L33/24 ,  H01L33/32

摘要： The present invention relates to a GaN based nitride based light emitting device improved in Electrostatic Discharge (ESD) tolerance (withstanding property) and a method for fabricating the same including a substrate and a V-shaped distortion structure made of an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer on the substrate and formed with reference to the n-type nitride semiconductor layer.

摘要翻译： 本发明涉及改进了静电放电（ESD）公差（耐受性）的GaN基氮化物系发光器件及其制造方法，其包括基板和由n型氮化物半导体制成的V形失真结构 层，有源层和p型氮化物半导体层，并且基于n型氮化物半导体层形成。

公开(公告)号：US20100207097A1

公开(公告)日：2010-08-19

申请号：US12618164

申请日：2009-11-13

申请人： Jeong Tak Oh ,  Yong Chun Kim ,  Dong Joon Kim ,  Dong Ju Lee

发明人： Jeong Tak Oh ,  Yong Chun Kim ,  Dong Joon Kim ,  Dong Ju Lee

IPC分类号： H01L33/00 ,  H01L21/30

CPC分类号： H01L33/18 ,  H01L33/20 ,  H01L33/32

摘要： A nitride semiconductor light emitting device includes a substrate, a first conductivity type nitride semiconductor layer disposed on the substrate and including a plurality of V-pits placed in a top surface thereof, a silicon compound formed in the vertex region of each of the V-pits, an active layer disposed on the first conductivity type nitride semiconductor layer and including depressions conforming to the shape of the plurality of V-pits, and a second conductivity type nitride semiconductor layer disposed on the active layer. The nitride semiconductor light emitting device, when receiving static electricity achieves high resistance to electrostatic discharge (ESD) since current is concentrated in the V-pits and the silicon compound placed on dislocations caused by lattice defects.

摘要翻译： 氮化物半导体发光器件包括衬底，设置在衬底上的第一导电型氮化物半导体层，并且包括放置在其顶表面中的多个V凹坑，形成在每个V形衬底的顶点区域中的硅化合物， 凹坑，设置在第一导电型氮化物半导体层上并包括符合多个V型凹坑的形状的凹陷的有源层和设置在有源层上的第二导电型氮化物半导体层。 氮化物半导体发光器件在接收到静电时实现了高静电放电（ESD）的抗性，因为电流集中在V型凹坑中，并且硅化合物置于由晶格缺陷引起的位错上。

公开(公告)号：US20100163899A1

公开(公告)日：2010-07-01

申请号：US12618269

申请日：2009-11-13

申请人： Jeong Tak Oh ,  Yong Chun Kim

发明人： Jeong Tak Oh ,  Yong Chun Kim

IPC分类号： H01L33/00

CPC分类号： H01L33/50 ,  H01L2924/181 ,  H01L2924/00012

摘要： A white light emitting device is disclosed. The white light emitting device includes a blue light emitting diode (LED) including a plurality of active layers generating different peak wavelengths, and phosphors emitting yellow light when excited by light emitted from the blue LED. The white light emitting device ensures enhanced excitation efficiency of the phosphors, and high luminance.

摘要翻译： 公开了一种白色发光器件。 白色发光装置包括蓝色发光二极管（LED），其包括产生不同峰值波长的多个有源层，以及当从蓝色LED发射的光激发时发射黄色光的荧光体。 白色发光装置确保荧光体的增强的激发效率和高亮度。

公开(公告)号：US08728841B2

公开(公告)日：2014-05-20

申请号：US13365056

申请日：2012-02-02

申请人： Jeong Tak Oh ,  Yong Chun Kim

发明人： Jeong Tak Oh ,  Yong Chun Kim

IPC分类号： H01L21/00

CPC分类号： H01L21/0254 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/02494 ,  H01L21/02587 ,  H01L33/007 ,  H01L33/06 ,  H01L33/20 ,  H01L33/24

摘要： A nitride semiconductor light emitting device, and a method of manufacturing the same are disclosed. The nitride semiconductor light emitting device includes a substrate, an n-type nitride semiconductor layer disposed on the substrate and including a plurality of V-shaped pits in a top surface thereof, an active layer disposed on the n-type nitride semiconductor layer and including depressions conforming to the shape of the plurality of V-shaped pits, and a p-type nitride semiconductor layer disposed on the active layer and including a plurality of protrusions on a top surface thereof. Since the plurality of V-shaped pits are formed in the top surface of the n-type nitride semiconductor layer, the protrusions can be formed on the p-type nitride semiconductor layer as an in-situ process. Accordingly, the resistance to ESD, and light extraction efficiency are enhanced.

摘要翻译： 公开了一种氮化物半导体发光器件及其制造方法。 氮化物半导体发光器件包括衬底，设置在衬底上的n型氮化物半导体层，在其顶表面中包括多个V形凹坑，设置在n型氮化物半导体层上的有源层，并且包括 符合多个V形凹坑的形状的凹陷以及设置在活性层上的p型氮化物半导体层，并且在其顶表面上包括多个突起。 由于在n型氮化物半导体层的顶表面上形成多个V形凹坑，所以可以作为原位工艺在p型氮化物半导体层上形成突起。 因此，提高了对ESD的耐受性和光提取效率。

公开(公告)号：US20120129289A1

公开(公告)日：2012-05-24

申请号：US13365056

申请日：2012-02-02

申请人： Jeong Tak OH ,  Yong Chun Kim

发明人： Jeong Tak OH ,  Yong Chun Kim

IPC分类号： H01L33/02

CPC分类号： H01L21/0254 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/02494 ,  H01L21/02587 ,  H01L33/007 ,  H01L33/06 ,  H01L33/20 ,  H01L33/24

摘要： A nitride semiconductor light emitting device, and a method of manufacturing the same are disclosed. The nitride semiconductor light emitting device includes a substrate, an n-type nitride semiconductor layer disposed on the substrate and including a plurality of V-shaped pits in a top surface thereof, an active layer disposed on the n-type nitride semiconductor layer and including depressions conforming to the shape of the plurality of V-shaped pits, and a p-type nitride semiconductor layer disposed on the active layer and including a plurality of protrusions on a top surface thereof. Since the plurality of V-shaped pits are formed in the top surface of the n-type nitride semiconductor layer, the protrusions can be formed on the p-type nitride semiconductor layer as an in-situ process. Accordingly, the resistance to ESD, and light extraction efficiency are enhanced.

摘要翻译： 公开了一种氮化物半导体发光器件及其制造方法。 氮化物半导体发光器件包括衬底，设置在衬底上的n型氮化物半导体层，在其顶表面中包括多个V形凹坑，设置在n型氮化物半导体层上的有源层，并且包括 符合多个V形凹坑的形状的凹陷以及设置在活性层上的p型氮化物半导体层，并且在其顶表面上包括多个突起。 由于在n型氮化物半导体层的顶表面上形成多个V形凹坑，所以可以作为原位工艺在p型氮化物半导体层上形成突起。 因此，提高了对ESD的耐受性和光提取效率。

公开(公告)号：US08134170B2

公开(公告)日：2012-03-13

申请号：US12620260

申请日：2009-11-17

申请人： Jeong Tak Oh ,  Yong Chun Kim

发明人： Jeong Tak Oh ,  Yong Chun Kim

IPC分类号： H01L33/00

CPC分类号： H01L21/0254 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/02494 ,  H01L21/02587 ,  H01L33/007 ,  H01L33/06 ,  H01L33/20 ,  H01L33/24

摘要： A nitride semiconductor light emitting device, and a method of manufacturing the same are disclosed. The nitride semiconductor light emitting device includes a substrate, an n-type nitride semiconductor layer disposed on the substrate and including a plurality of V-shaped pits in a top surface thereof, an active layer disposed on the n-type nitride semiconductor layer and including depressions conforming to the shape of the plurality of V-shaped pits, and a p-type nitride semiconductor layer disposed on the active layer and including a plurality of protrusions on a top surface thereof. Since the plurality of V-shaped pits are formed in the top surface of the n-type nitride semiconductor layer, the protrusions can be formed on the p-type nitride semiconductor layer as an in-situ process. Accordingly, the resistance to ESD, and light extraction efficiency are enhanced.

摘要翻译： 公开了一种氮化物半导体发光器件及其制造方法。 氮化物半导体发光器件包括衬底，设置在衬底上的n型氮化物半导体层，在其顶表面中包括多个V形凹坑，设置在n型氮化物半导体层上的有源层，并且包括 符合多个V形凹坑的形状的凹陷以及设置在活性层上的p型氮化物半导体层，并且在其顶表面上包括多个突起。 由于在n型氮化物半导体层的顶表面上形成多个V形凹坑，所以可以作为原位工艺在p型氮化物半导体层上形成突起。 因此，提高了对ESD的耐受性和光提取效率。

公开(公告)号：US08030640B2

公开(公告)日：2011-10-04

申请号：US12618164

申请日：2009-11-13

申请人： Jeong Tak Oh ,  Yong Chun Kim ,  Dong Joon Kim ,  Dong Ju Lee

发明人： Jeong Tak Oh ,  Yong Chun Kim ,  Dong Joon Kim ,  Dong Ju Lee

IPC分类号： H01L33/00 ,  H01L21/30

CPC分类号： H01L33/18 ,  H01L33/20 ,  H01L33/32

摘要： A nitride semiconductor light emitting device includes a substrate, a first conductivity type nitride semiconductor layer disposed on the substrate and including a plurality of V-pits placed in a top surface thereof, a silicon compound formed in the vertex region of each of the V-pits, an active layer disposed on the first conductivity type nitride semiconductor layer and including depressions conforming to the shape of the plurality of V-pits, and a second conductivity type nitride semiconductor layer disposed on the active layer. The nitride semiconductor light emitting device, when receiving static electricity achieves high resistance to electrostatic discharge (ESD) since current is concentrated in the V-pits and the silicon compound placed on dislocations caused by lattice defects.

摘要翻译： 氮化物半导体发光器件包括衬底，设置在衬底上的第一导电型氮化物半导体层，并且包括放置在其顶表面中的多个V凹坑，形成在每个V形衬底的顶点区域中的硅化合物， 凹坑，设置在第一导电型氮化物半导体层上并包括符合多个V凹坑形状的凹陷的有源层和设置在有源层上的第二导电型氮化物半导体层。 氮化物半导体发光器件在接收到静电时实现了高静电放电（ESD）的抗性，因为电流集中在V型凹坑中，并且硅化合物置于由晶格缺陷引起的位错上。