公开(公告)号：US07050780B2

公开(公告)日：2006-05-23

申请号：US10175920

申请日：2002-06-21

申请人： Jeong-Hyun Cho

发明人： Jeong-Hyun Cho

IPC分类号： H04B1/16

CPC分类号： H04B15/06 ,  H04B1/403

摘要： A RF transceiver for AMPS communication includes: a baseband processor for generating a transmission intermediate frequency signal and processing a reception intermediate frequency signal; a local oscillator for generating a local oscillation signal in transmission and reception; an up-mixer for combining the transmission intermediate frequency signal with the local frequency signal; a duplexer for processing a radio frequency signal received through an antenna; and a specific frequency removing unit installed between the local oscillator and an up-mixer to remove a specific frequency signal generated from the local oscillator. A filter is installed between the local oscillator and the up-mixer to remove the 2-times frequency of the local oscillation signal of 957.66 MHz, thereby removing the self-quieting phenomenon generated in the channel 76 of AMPS.

公开(公告)号：US20130220821A1

公开(公告)日：2013-08-29

申请号：US13619272

申请日：2012-09-14

申请人： Jeong-Hyun Cho ,  Samuel Thomas Picraux

发明人： Jeong-Hyun Cho ,  Samuel Thomas Picraux

IPC分类号： C25D5/02 ,  H01M10/04 ,  H01M4/64 ,  H01M4/66 ,  B82Y40/00 ,  B82Y30/00

CPC分类号： C25D1/04 ,  B82Y30/00 ,  B82Y40/00 ,  C25D1/006 ,  C25D11/045 ,  C25D11/24 ,  H01M4/134 ,  H01M4/136 ,  H01M4/661 ,  Y10T29/49115

摘要： Articles of silicon nanowires were synthesized on metal substrates. The preparation minimized the formation of metal silicides and avoided the formation of islands of silicon on the metal substrates. These articles may be used as electrodes of silicon nanowires on current collectors.

摘要翻译： 在金属基材上合成了硅纳米线。 该制备使金属硅化物的形成最小化，并避免在金属基底上形成硅岛。 这些制品可以用作集电器上的硅纳米线的电极。

公开(公告)号：US20120135237A1

公开(公告)日：2012-05-31

申请号：US13266558

申请日：2010-04-28

申请人： David H. Gracias ,  Jeong-Hyun Cho

发明人： David H. Gracias ,  Jeong-Hyun Cho

IPC分类号： B32B5/16 ,  H01L21/302 ,  G03F7/20 ,  B29C59/02 ,  B82Y40/00 ,  B82Y99/00

CPC分类号： G03F7/0037 ,  B81C1/00007 ,  B81C2201/0143 ,  Y10T428/2982

摘要： The self-assembly of polyhedral nanostructures having at least one dimension of about 100 nm to about 900 nm with electron-beam lithographically patterned surfaces is provided. The presently disclosed three-dimensional nanostructures spontaneous assemble from two-dimensional, tethered panels during plasma or wet chemical etching of the underlying silicon substrate. Any desired surface pattern with a width as small as fifteen nanometers can be precisely defined in all three dimensions. The formation of curving, continuous nanostructures using extrinsic stress also is disclosed.

摘要翻译： 提供了具有约100nm至约900nm的至少一个尺寸的电子束光刻图案表面的多面体纳米结构的自组装。 目前公开的三维纳米结构在等离子体或湿法化学蚀刻下面的硅衬底期间从二维的系留板自发组装。 可以在所有三维中精确地定义任何期望的宽度小至十五纳米的表面图案。 公开了使用外在应力的弯曲连续纳米结构的形成。