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    Thin film processing plasma reactor chamber with radially upward sloping ceiling for promoting radially outward diffusion
    1.
    发明授权
    Thin film processing plasma reactor chamber with radially upward sloping ceiling for promoting radially outward diffusion 失效
    具有径向向上倾斜天花板的薄膜处理等离子体反应器室，用于促进径向向外扩散

    公开(公告)号：US6076482A

    公开(公告)日：2000-06-20

    申请号：US937347

    申请日：1997-09-20

    申请人： Ji Ding ,  James Carducci ,  Hongching Shan ,  Siamak Salimian ,  Evans Lee ,  Paul E. Luscher ,  Mike Welch

    发明人： Ji Ding ,  James Carducci ,  Hongching Shan ,  Siamak Salimian ,  Evans Lee ,  Paul E. Luscher ,  Mike Welch

    IPC分类号： H01J37/32 ,  C23C16/00 ,  C23F1/02 ,  H01L21/302

    CPC分类号： H01J37/32458 ,  H01J37/321

    摘要： The invention contours the chamber surface overlying semiconductor wafer being processed (i.e., the chamber ceiling) in such a way as to promote or optimize the diffusion of plasma ions from their regions of origin to other regions which would otherwise have a relative paucity of plasma ions. This is accomplished by providing a greater chamber volume over those areas of the wafer otherwise experiencing a shortage of plasma ions and a smaller chamber volume over those areas of the wafer experiencing a plentitude of plasma ions (e.g, due to localized plasma generation occurring over the latter areas). Thus, the ceiling is contoured to promote a plasma ion diffusion which best compensates for localized or non-uniform patterns in plasma ion generation typical of an inductively coupled source (e.g., an overhead inductive antenna). Specifically, the invention provides a lesser ceiling height (relative to the wafer surface) over regions in which plasma ions are generated or tend to congregate and a greater ceiling height in other regions. More specifically, in the case of an overlying inductive antenna where plasma ion density tends to fall off toward the wafer periphery, the ceiling contour is such that the ceiling height increases radially, i.e., toward the wafer periphery. This promotes or increases plasma ion diffusion toward the wafer periphery as a function of the rate at which the ceiling height increases radially.

    摘要翻译： 本发明轮廓地覆盖正在被处理的半导体晶片（即，室顶）上的腔表面，以促进或优化等离子体离子从其原始区域扩散到否则将具有相对低的等离子体离子的其它区域 。 这通过在晶片的那些区域上提供更大的室体积，否则经历等离子体离子的短缺，并且在经历等离子体离子的大量的晶片的那些区域（例如，由于在 后面的区域）。 因此，天花板的轮廓是促进等离子体离子扩散，其最好地补偿电感耦合源（例如，架空感应天线）典型的等离子体离子产生中的局部或非均匀图案。 具体地说，本发明提供了在其中产生等离子体离子或倾向聚集的区域和在其它区域中具有更大的天花板高度的较小的天花板高度（相对于晶片表面）。 更具体地说，在等离子体离子密度倾向于朝向晶片周边倾斜的上覆感应天线的情况下，天花板高度使天花板高度径向增加，即朝向晶片周边。 这促进或增加等离子体离子向晶片周边的扩散，这是天花板高度径向增加的速率的函数。

    Plasma reactor overhead source power electrode with low arcing tendency, cylindrical gas outlets and shaped surface
    6.
    发明申请
    Plasma reactor overhead source power electrode with low arcing tendency, cylindrical gas outlets and shaped surface 有权
    等离子体反应堆架空电源电极具有低电弧倾向，圆柱形气体出口和成形表面

    公开(公告)号：US20050178748A1

    公开(公告)日：2005-08-18

    申请号：US11046538

    申请日：2005-01-28

    申请人： Douglas Buchberger ,  Daniel Hoffman ,  Olga Regelman ,  James Carducci ,  Keiji Horioka ,  Jang Yang

    发明人： Douglas Buchberger ,  Daniel Hoffman ,  Olga Regelman ,  James Carducci ,  Keiji Horioka ,  Jang Yang

    IPC分类号： H01J37/32 ,  B23K9/00

    CPC分类号： H01J37/32091 ,  H01J37/32082 ,  H01J37/32174 ,  H01J37/32183 ,  H01J37/3244

    摘要： An overhead gas distribution electrode forming at least a portion of the ceiling of a plasma reactor has a bottom surface facing a processing zone of the reactor. The electrode includes a gas supply manifold for receiving process gas at a supply pressure at a top portion of the electrode and plural pressure-dropping cylindrical orifices extending axially relative to the electrode from the gas supply manifold at one end of each the orifice. A radial gas distribution manifold within the electrode extends radially across the electrode. Plural axially extending high conductance gas flow passages couple the opposite ends of respective ones of the plural pressure-dropping orifices to the radial gas distribution manifold. Plural high conductance cylindrical gas outlet holes are formed in the plasma-facing bottom surface of the electrode and extend axially to the radial gas distribution manifold.

    摘要翻译： 形成等离子体反应器的天花板的至少一部分的顶部气体分配电极具有面向反应器的处理区域的底面。 电极包括用于在电极顶部处的供给压力下接收处理气体的气体供应歧管和在每个孔口的一端处相对于来自气体供应歧管的电极轴向延伸的多个降压圆柱形孔。 电极内的径向气体分布歧管径向延伸穿过电极。 多个轴向延伸的高电导气流通道将多个降压孔中的相应端部的相对端连接到径向气体分配歧管。 在电极的等离子体面向底面中形成多个高电导圆柱形气体出口孔，并且轴向延伸到径向气体分配歧管。

    PLASMA CONFINEMENT BAFFLE AND FLOW EQUALIZER FOR ENHANCED MAGNETIC CONTROL OF PLASMA RADIAL DISTRIBUTION
    8.
    发明申请
    PLASMA CONFINEMENT BAFFLE AND FLOW EQUALIZER FOR ENHANCED MAGNETIC CONTROL OF PLASMA RADIAL DISTRIBUTION 审中-公开
    用于等离子体辐射分布的增强磁控制的等离子体限制气体和流量均衡器

    公开(公告)号：US20080110567A1

    公开(公告)日：2008-05-15

    申请号：US11751575

    申请日：2007-05-21

    申请人： Matthew L. Miller ,  Daniel J. Hoffman ,  Steven C. Shannon ,  Michael Kutney ,  James Carducci ,  Andrew Nguyen

    发明人： Matthew L. Miller ,  Daniel J. Hoffman ,  Steven C. Shannon ,  Michael Kutney ,  James Carducci ,  Andrew Nguyen

    IPC分类号： H01L21/306

    CPC分类号： H01J37/32633 ,  H01J37/3244 ,  H01J37/32449

    摘要： A plasma reactor with plasma confinement and plasma radial distribution capability. The reactor comprises a reactor chamber including a side wall and a workpiece support pedestal in the chamber and defining a pumping annulus between the pedestal and side wall and a pumping port at a bottom of the pumping annulus. The reactor further comprises a means for confining gas flow in an axial direction through the pumping annulus to prevent plasma from flowing to the pumping port. The reactor further comprises a means for compensating for asymmetry of gas flow pattern across the pedestal arising from placement of the pumping port. The reactor further comprises a means for controlling plasma distribution having an inherent tendency to promote edge-high plasma density distribution. The means for confining gas flow is depressed below the workpiece support sufficiently to compensate for the edge-high plasma distribution tendency of the means for controlling plasma distribution.

    摘要翻译： 一种具有等离子体约束和等离子体径向分布能力的等离子体反应器。 该反应器包括反应室，该反应室包括室中的侧壁和工件支撑基座，并且在基座和侧壁之间限定了泵送环形空间以及在泵送环空的底部的泵送端口。 反应器还包括用于将气流沿轴向限制通过泵送环的装置，以防止等离子体流到泵送端口。 所述反应器还包括用于补偿穿过所述基座的由所述泵送端口的放置产生的气流图案的不对称性的装置。 反应器还包括用于控制具有促进边缘 - 高等离子体密度分布的固有倾向的等离子体分布的装置。 用于限制气流的装置在工件支撑下方被压下，足以补偿用于控制等离子体分布的装置的边缘 - 高等离子体分布趋势。

    Plasma reactor overhead source power electrode with low arcing tendency, cylindrical gas outlets and shaped surface
    9.
    发明授权
    Plasma reactor overhead source power electrode with low arcing tendency, cylindrical gas outlets and shaped surface 有权
    等离子体反应堆架空电源电极具有低电弧倾向，圆柱形气体出口和成形表面

    公开(公告)号：US07196283B2

    公开(公告)日：2007-03-27

    申请号：US11046538

    申请日：2005-01-28

    申请人： Douglas A. Buchberger, Jr. ,  Daniel J. Hoffman ,  Olga Regelman ,  James Carducci ,  Keiji Horioka ,  Jang Gyoo Yang

    发明人： Douglas A. Buchberger, Jr. ,  Daniel J. Hoffman ,  Olga Regelman ,  James Carducci ,  Keiji Horioka ,  Jang Gyoo Yang

    IPC分类号： B23K9/00

    CPC分类号： H01J37/32091 ,  H01J37/32082 ,  H01J37/32174 ,  H01J37/32183 ,  H01J37/3244

    摘要： An overhead gas distribution electrode forming at least a portion of the ceiling of a plasma reactor has a bottom surface facing a processing zone of the reactor. The electrode includes a gas supply manifold for receiving process gas at a supply pressure at a top portion of the electrode and plural pressure-dropping cylindrical orifices extending axially relative to the electrode from the gas supply manifold at one end of each the orifice. A radial gas distribution manifold within the electrode extends radially across the electrode. Plural axially extending high conductance gas flow passages couple the opposite ends of respective ones of the plural pressure-dropping orifices to the radial gas distribution manifold. Plural high conductance cylindrical gas outlet holes are formed in the plasma-facing bottom surface of the electrode and extend axially to the radial gas distribution manifold.

    摘要翻译： 形成等离子体反应器的天花板的至少一部分的顶部气体分配电极具有面向反应器的处理区域的底面。 电极包括用于在电极顶部处的供给压力下接收处理气体的气体供应歧管和在每个孔口的一端处相对于来自气体供应歧管的电极轴向延伸的多个降压圆柱形孔。 电极内的径向气体分布歧管径向延伸穿过电极。 多个轴向延伸的高电导气流通道将多个降压孔中的相应端部的相对端连接到径向气体分配歧管。 在电极的等离子体面向底面中形成多个高电导圆柱形气体出口孔，并且轴向延伸到径向气体分配歧管。