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    Method for manufacturing Fe—Si alloy powders
    1.
    发明授权
    Method for manufacturing Fe—Si alloy powders 有权
    制备Fe-Si合金粉末的方法

    公开(公告)号：US08617290B2

    公开(公告)日：2013-12-31

    申请号：US12909914

    申请日：2010-10-22

    申请人： Ji-Young Byun ,  Yoon-Bae Kim ,  Hyun-Kwang Seok ,  Jang-Won Kim ,  Dow-Bin Hyun ,  Heon-Phil Ha ,  Do-Hyung Kim

    发明人： Ji-Young Byun ,  Yoon-Bae Kim ,  Hyun-Kwang Seok ,  Jang-Won Kim ,  Dow-Bin Hyun ,  Heon-Phil Ha ,  Do-Hyung Kim

    IPC分类号： B22F9/16

    CPC分类号： B22F9/16

    摘要： The present invention relates to a method for manufacturing a Fe—Si alloy powder. A method for manufacturing a Fe—Si alloy powder includes: providing a mixture of an Al2O3 powder, an active agent powder, a Si powder, and a Fe powder; heating the mixture with a temperature of 700° C. to 1200° C. in the hydrogen atomosphere; magnetically separating a Fe-containing material from the mixture; and separating a Fe—Si alloy powder by soaking the Fe-containing material in an alkali solution. In the heating of the mixture, the Si powder is deposited on the surface of the Fe powder and diffused into the Fe powder.

    摘要翻译： 本发明涉及一种Fe-Si合金粉末的制造方法。 Fe-Si合金粉末的制造方法包括：提供Al 2 O 3粉末，活性剂粉末，Si粉末和Fe粉末的混合物; 在氢气氛中以700℃至1200℃的温度加热混合物; 从混合物中磁性分离含Fe材料; 并通过将含Fe材料浸入碱溶液中分离Fe-Si合金粉末。 在混合物的加热中，将Si粉末沉积在Fe粉末的表面上并扩散到Fe粉末中。

    Method and apparatus for plasma ion implantation of solid element
    3.
    发明授权
    Method and apparatus for plasma ion implantation of solid element 有权
    固体元素等离子体离子注入的方法和装置

    公开(公告)号：US09139902B2

    公开(公告)日：2015-09-22

    申请号：US13044621

    申请日：2011-03-10

    申请人： Seung-Hee Han ,  Ji-Young Byun ,  Hyun-Kwang Seok ,  Jun-Hyun Han ,  Yu-Chan Kim ,  Sung-Bai Lee ,  Jin-Young Choi

    发明人： Seung-Hee Han ,  Ji-Young Byun ,  Hyun-Kwang Seok ,  Jun-Hyun Han ,  Yu-Chan Kim ,  Sung-Bai Lee ,  Jin-Young Choi

    IPC分类号： C23C14/34 ,  C23C14/35 ,  H01J37/34 ,  H01J37/32 ,  C23C14/48 ,  C23C14/16

    CPC分类号： C23C14/35 ,  C23C14/16 ,  C23C14/48 ,  H01J37/32532 ,  H01J37/3438 ,  H01J37/3467

    摘要： Disclosed are an apparatus and a method for plasma ion implantation of a solid element, which enable plasma ion implantation of a solid element. According to the apparatus and method, a sample is placed on a sample stage in a vacuum chamber, and the inside of the vacuum chamber is maintained as a vacuum state. And, gas is supplied in the vacuum chamber, a first pulsed DC power is applied to a magnetron sputtering source so as to generate plasma ions of a solid element. The plasma ions of a solid element sputtered from the source are implanted on the surface of the sample. The first power is a pulse DC power capable of applying a high power the moment a pulse is applied while maintaining low average power. And, simultaneously with the applying of the first pulse power, a second power may be supplied to the sample stage, which is a high negative voltage pulse accelerating plasma ions of a solid element to the sample and synchronized to the pulse DC power for magnetron sputtering source. And, inductively coupled plasma may be generated in the vacuum chamber via antenna so as to increase ionization rate of a solid element and lower operation pressure of magnetron sputtering source.

    摘要翻译： 公开了固体元素的等离子体离子注入的装置和方法，其能够实现固体元素的等离子体离子注入。 根据该装置和方法，将样品放置在真空室中的样品台上，并将真空室的内部保持为真空状态。 并且，在真空室中供应气体，将第一脉冲DC功率施加到磁控溅射源，以产生固体元素的等离子体离子。 从源极溅射的固体元素的等离子体离子注入到样品的表面上。 第一功率是脉冲直流电力，能够在维持低平均功率的同时施加脉冲施加高功率。 并且，与施加第一脉冲功率同时，可以将第二功率提供给样品台，该样品台是将固体元素的等离子体离子加速至样品的高负电压脉冲，并与用于磁控溅射的脉冲直流电力同步 资源。 并且，可以通过天线在真空室中产生电感耦合等离子体，以增加固体元素的电离速率和降低磁控管溅射源的操作压力。

    METHOD AND APPARATUS FOR PLASMA ION IMPLANTATION OF SOLID ELEMENT
    4.
    发明申请
    METHOD AND APPARATUS FOR PLASMA ION IMPLANTATION OF SOLID ELEMENT 有权
    固体元素等离子体植入的方法与装置

    公开(公告)号：US20120228123A1

    公开(公告)日：2012-09-13

    申请号：US13044621

    申请日：2011-03-10

    申请人： Seung-Hee HAN ,  Ji-Young Byun ,  Hyun-Kwang Seok ,  Jun-Hyun Han ,  Yu-Chan Kim ,  Sung-Bai Lee ,  Jin-Young Choi

    发明人： Seung-Hee HAN ,  Ji-Young Byun ,  Hyun-Kwang Seok ,  Jun-Hyun Han ,  Yu-Chan Kim ,  Sung-Bai Lee ,  Jin-Young Choi

    IPC分类号： C23C14/48 ,  C23C14/35

    CPC分类号： C23C14/35 ,  C23C14/16 ,  C23C14/48 ,  H01J37/32532 ,  H01J37/3438 ,  H01J37/3467

    摘要： Disclosed are an apparatus and a method for plasma ion implantation of a solid element, which enable plasma ion implantation of a solid element.According to the apparatus and method, a sample is placed on a sample stage in a vacuum chamber, and the inside of the vacuum chamber is maintained as a vacuum state. And, gas is supplied in the vacuum chamber, a first pulsed DC power is applied to a magnetron sputtering source so as to generate plasma ions of a solid element. The plasma ions of a solid element sputtered from the source are implanted on the surface of the sample. The first power is a pulse DC power capable of applying a high power the moment a pulse is applied while maintaining low average power. And, simultaneously with the applying of the first pulse power, a second power may be supplied to the sample stage, which is a high negative voltage pulse accelerating plasma ions of a solid element to the sample and synchronized to the pulse DC power for magnetron sputtering source. And, inductively coupled plasma may be generated in the vacuum chamber via antenna so as to increase ionization rate of a solid element and lower operation pressure of magnetron sputtering source.

    摘要翻译： 公开了固体元素的等离子体离子注入的装置和方法，其能够实现固体元素的等离子体离子注入。 根据该装置和方法，将样品放置在真空室中的样品台上，并将真空室的内部保持为真空状态。 并且，在真空室中供应气体，将第一脉冲DC功率施加到磁控溅射源，以产生固体元素的等离子体离子。 从源极溅射的固体元素的等离子体离子注入到样品的表面上。 第一功率是脉冲直流电力，能够在维持低平均功率的同时施加脉冲施加高功率。 并且，与施加第一脉冲功率同时，可以将第二功率提供给样品台，该样品台是将固体元素的等离子体离子加速至样品的高负电压脉冲，并与用于磁控溅射的脉冲直流电力同步 资源。 并且，可以通过天线在真空室中产生电感耦合等离子体，以增加固体元素的电离速率和降低磁控管溅射源的操作压力。

    COMPOSITE IMPLANT HAVING POROUS STRUCTURE FILLED WITH BIODEGRADABLE ALLOY AND METHOD OF MAGNESIUM-BASED MANUFACTURING THE SAME
    6.
    发明申请
    COMPOSITE IMPLANT HAVING POROUS STRUCTURE FILLED WITH BIODEGRADABLE ALLOY AND METHOD OF MAGNESIUM-BASED MANUFACTURING THE SAME 审中-公开
    具有可生物降解合金填充的多孔结构的复合植入物及其基于镁的制造方法

    公开(公告)号：US20110054629A1

    公开(公告)日：2011-03-03

    申请号：US12933462

    申请日：2009-03-18

    申请人： Hyun-Kwang Seok ,  Seok-Jo Yang ,  Yu-Chan Kim ,  Ja-Kyo Koo

    发明人： Hyun-Kwang Seok ,  Seok-Jo Yang ,  Yu-Chan Kim ,  Ja-Kyo Koo

    IPC分类号： A61F2/28 ,  B05D7/00 ,  B05D3/02

    CPC分类号： A61L27/58 ,  A61L27/427 ,  A61L27/446

    摘要： The present invention provides a composite implant comprising pores of a porous structure filled with a biodegradable magnesium-based alloy. Further, the present invention provides a composite implant which filles pores of the porous structure prepared by a metal, a ceramic or a polymer with a biodegradable magnesium-based alloy. Mechanical properties of the composite implant of the present invention are improved because a magnesium-based alloy filled in its pores increases the strength of a porous structure comprised of a metal, a ceramic or a polymer. Further, it can be expected that the magnesium-based alloy filled in the porous structure is decomposed in a living body, thus increasing bone formation rate. Accordingly bone tissue can be rapidly formed because the composite implant of the present invention has high strength and excellent interfacial force between the composite implant and bone tissue, compared to conventional porous materials.

    摘要翻译： 本发明提供了一种复合植入物，其包含填充有可生物降解的镁基合金的多孔结构的孔。 此外，本发明提供一种复合植入物，其填充由具有可生物降解的镁基合金的金属，陶瓷或聚合物制备的多孔结构的孔。 本发明的复合植入物的机械性能得到改善，因为填充在其孔中的镁基合金增加了由金属，陶瓷或聚合物构成的多孔结构的强度。 此外，可以预期填充在多孔结构中的镁基合金在生物体中分解，从而增加骨形成速率。 因此，与常规多孔材料相比，本发明的复合植入物具有高复合植入物和骨组织之间的高强度和优异的界面力，因此能够快速形成骨组织。

    Shear deformation device for scalping
    7.
    发明授权
    Shear deformation device for scalping 失效
    剪切变形装置

    公开(公告)号：US06363765B1

    公开(公告)日：2002-04-02

    申请号：US09638763

    申请日：2000-08-15

    申请人： Hyun-Kwang Seok ,  Jae-Chul Lee ,  Jong-Woo Park ,  Young-Hoon Chung ,  Ho-In Lee

    发明人： Hyun-Kwang Seok ,  Jae-Chul Lee ,  Jong-Woo Park ,  Young-Hoon Chung ,  Ho-In Lee

    IPC分类号： B21C2300

    CPC分类号： B21C25/00 ,  B21C23/001 ,  B21C23/005 ,  B21C23/01 ,  B21C33/008

    摘要： The present invention relates to a shear deformation device. To improve the productivity by solving the problem that the amount of shear deformation of a material is not uniform and sufficient due to the gap between the curved portion of the molding path and the lower parts of the material and omitting any additional process for removing irregularity and surface products on the surface of the material, there is provided a shear deformation device capable of scalping, characterized in that a scalping guide path which allows the surface of the material to be separated from the other portions of the material as the material is scalped at a predetermined thickness when passing through the curved portion during shear deformation is formed in the curved portion in communication with the molding path. In addition, there are provided additional constructions for effectively performing shear deformation by a small power by reducing the friction at the molding path excepting the curved portion. The present invention thusly constructed can be utilized for continuously and effectively mass-produce sheared materials.

    摘要翻译： 本发明涉及一种剪切变形装置。 通过解决材料的剪切变形量由于模制路径的弯曲部分和材料的下部之间的间隙而不均匀而足够的问题来提高生产率，并且省略了用于去除不规则性的任何附加工艺， 提供了在材料表面上的表面产品，提供了一种能够进行烫伤的剪切变形装置，其特征在于，当材料的表面被灼烧时，允许材料的表面与材料的其它部分分离的烫伤引导路径 在与模制路径连通的弯曲部分中形成了在剪切变形期间通过弯曲部分时的预定厚度。 此外，还提供了通过减小​​除了弯曲部分之外的模制路径处的摩擦力来通过小功率有效地执行剪切变形的附加结构。 这样构造的本发明可以用于连续且有效地大量生产剪切材料。

    Continuous shear deformation device
    10.
    发明授权
    Continuous shear deformation device 失效
    连续剪切变形装置

    公开(公告)号：US06370930B1

    公开(公告)日：2002-04-16

    申请号：US09638761

    申请日：2000-08-15

    申请人： Jae-Chul Lee ,  Hyun-Kwang Seok ,  Jong-Woo Park ,  Young-Hoon Chung ,  Ho-In Lee

    发明人： Jae-Chul Lee ,  Hyun-Kwang Seok ,  Jong-Woo Park ,  Young-Hoon Chung ,  Ho-In Lee

    IPC分类号： B21C2300

    CPC分类号： B21C23/005 ,  B21C23/001

    摘要： The present invention relates to a continuous shear deformation device. In order to occur shear deformation at the position at which a material is inserted into a molding path from a rotary guide apparatus for the purpose of solving the problem that the amount of shear deformation of a material is non-uniform and insufficient due to the gap between the curved portion of the molding path and the lower parts of the material, there is provided a continuous shear deformation device, characterized in that a curved portion is constructed by collaboration between the rotary guide apparatus and the molding path. In addition, there are provided additional constructions for effectively performing shear deformation by a small power by reducing the friction at the molding path excepting the curved portion. The present invention thusly constructed can be utilized for continuously and effectively mass-produce sheared materials.

    摘要翻译： 本发明涉及连续剪切变形装置。 为了解决材料的剪切变形量由于间隙而不均匀和不足的问题，为了在从旋转引导装置插入到模制路径中的位置处发生剪切变形 在模制路径的弯曲部分和材料的下部之间提供连续的剪切变形装置，其特征在于，通过旋转导向装置和模制路径之间的协作构造弯曲部分。 此外，还提供了通过减小​​除了弯曲部分之外的模制路径处的摩擦力来通过小功率有效地执行剪切变形的附加结构。 这样构造的本发明可以用于连续且有效地大量生产剪切材料。