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公开(公告)号：US08330952B2
公开(公告)日：2012-12-11
申请号：US12625304
申请日：2009-11-24
申请人： Wei Wu , Jingjing Li , Qiangfei Xia , Jianhua Yang
发明人： Wei Wu , Jingjing Li , Qiangfei Xia , Jianhua Yang
IPC分类号： G01J3/44
CPC分类号： G01J3/44 , G01N21/658 , G02B2006/0325 , G02B2006/12107
摘要： A system for performing Raman spectroscopy comprises a waveguide layer configured with at least one array of features, the at least one array of features being configured to provide guided-mode resonance for at least one wavelength of electromagnetic radiation; and at least one fluid channel disposed in the waveguide layer. An analyte sensor comprises an electromagnetic radiation source configured to emit a range of wavelengths of electromagnetic radiation, the system for performing Raman spectroscopy, and at least one photodetector configured to detect Raman scattered light.
摘要翻译： 用于执行拉曼光谱的系统包括配置有至少一个特征阵列的波导层，所述至少一个特征阵列被配置为为至少一个波长的电磁辐射提供导模谐振; 以及设置在波导层中的至少一个流体通道。 分析物传感器包括被配置为发射电磁辐射波长范围的电磁辐射源，用于执行拉曼光谱的系统，以及配置成检测拉曼散射光的至少一个光电检测器。
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公开(公告)号：US20110122405A1
公开(公告)日：2011-05-26
申请号：US12625304
申请日：2009-11-24
申请人： Wei Wu , Jingjing Li , Qiangfei Xia , Jianhua Yang
发明人： Wei Wu , Jingjing Li , Qiangfei Xia , Jianhua Yang
IPC分类号： G01J3/44
CPC分类号： G01J3/44 , G01N21/658 , G02B2006/0325 , G02B2006/12107
摘要： A system for performing Raman spectroscopy comprises a waveguide layer configured with at least one array of features, the at least one array of features being configured to provide guided-mode resonance for at least one wavelength of electromagnetic radiation; and at least one fluid channel disposed in the waveguide layer. An analyte sensor comprises an electromagnetic radiation source configured to emit a range of wavelengths of electromagnetic radiation, the system for performing Raman spectroscopy, and at least one photodetector configured to detect Raman scattered light.
摘要翻译： 用于执行拉曼光谱的系统包括配置有至少一个特征阵列的波导层，所述至少一个特征阵列被配置为为至少一个波长的电磁辐射提供导模谐振; 以及设置在波导层中的至少一个流体通道。 分析物传感器包括被配置为发射电磁辐射波长范围的电磁辐射源，用于执行拉曼光谱的系统，以及配置成检测拉曼散射光的至少一个光电检测器。
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公开(公告)号：US08879300B2
公开(公告)日：2014-11-04
申请号：US13384853
申请日：2010-04-22
申请人： Jianhua Yang , Wei Wu , Qiangfei Xia
发明人： Jianhua Yang , Wei Wu , Qiangfei Xia
IPC分类号： G11C11/00 , H01L45/00 , B82Y10/00 , H01L27/102
CPC分类号： B82Y10/00 , H01L27/1021 , H01L45/08
摘要： Various embodiments of the present invention are directed to nanoscale electronic devices that provide nonvolatile memristive switching. In one aspect, a two-terminal device (600) comprises a first electrode (602), a second electrode (604), and an active region (606) disposed between the first electrode and the second electrode. The active region includes a mobile dopant (608), and a fast drift ionic species (610). The fast drift ionic species drifts into a diode-like electrode/active region interface temporarily increasing conductance across the interface when a write voltage is applied to the two-terminal device to switch the device conductance.
摘要翻译： 本发明的各种实施例涉及提供非易失性忆阻切换的纳米级电子器件。 在一个方面，双端器件（600）包括第一电极（602），第二电极（604）和设置在第一电极和第二电极之间的有源区（606）。 有源区包括移动掺杂剂（608）和快速漂移的离子物质（610）。 当向双端器件施加写入电压以切换器件电导时，快速漂移的离子物质漂移到二极管状电极/有源区接口中，暂时增加跨接口的电导。
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公开(公告)号：US08525146B2
公开(公告)日：2013-09-03
申请号：US12961214
申请日：2010-12-06
IPC分类号： H01L47/00 , H01L21/326 , H01L21/479
CPC分类号： H01L45/04 , H01L27/2472 , H01L45/1206 , H01L45/1226 , H01L45/146
摘要： An electrical circuit component includes a first electrode, a plurality of second electrodes and a negative differential resistance (NDR) material. The first electrode and the plurality of second electrodes are connected to the NDR material and the NDR material is to electrically connect the first electrode to one of the plurality of second electrodes when a sufficient voltage is applied between the first electrode and the one of the plurality of second electrodes through the NDR material.
摘要翻译： 电路部件包括第一电极，多个第二电极和负的差分电阻（NDR）材料。 第一电极和多个第二电极连接到NDR材料，并且当在第一电极和多个第二电极之间施加足够的电压时，NDR材料将第一电极电连接到多个第二电极中的一个 的第二电极通过NDR材料。
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公开(公告)号：US20130051121A1
公开(公告)日：2013-02-28
申请号：US13384853
申请日：2010-04-22
申请人： Jianhua Yang , Wei Wu , Qiangfei Xia
发明人： Jianhua Yang , Wei Wu , Qiangfei Xia
CPC分类号： B82Y10/00 , H01L27/1021 , H01L45/08
摘要： Various embodiments of the present invention are directed to nanoscale electronic devices that provide nonvolatile memristive switching. In one aspect, a two-terminal device (600) comprises a first electrode (602), a second electrode (604), and an active region (606) disposed between the first electrode and the second electrode. The active region includes a mobile dopant (608), and a fast drift ionic species (610). The fast drift ionic species drifts into a diode-like electrode/active region interface temporarily increasing conductance across the interface when a write voltage is applied to the two-terminal device to switch the device conductance.
摘要翻译： 本发明的各种实施例涉及提供非易失性忆阻切换的纳米级电子器件。 在一个方面，双端器件（600）包括第一电极（602），第二电极（604）和设置在第一电极和第二电极之间的有源区（606）。 有源区包括移动掺杂剂（608）和快速漂移的离子物质（610）。 当向双端器件施加写入电压以切换器件电导时，快速漂移的离子物质漂移到二极管状电极/有源区接口中，暂时增加跨接口的电导。
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公开(公告)号：US20120138885A1
公开(公告)日：2012-06-07
申请号：US12961214
申请日：2010-12-06
IPC分类号： H01L29/12 , H01L21/326
CPC分类号： H01L45/04 , H01L27/2472 , H01L45/1206 , H01L45/1226 , H01L45/146
摘要： An electrical circuit component includes a first electrode, a plurality of second electrodes and a negative differential resistance (NDR) material. The first electrode and the plurality of second electrodes are connected to the NDR material and the NDR material is to electrically connect the first electrode to one of the plurality of second electrodes when a sufficient voltage is applied between the first electrode and the one of the plurality of second electrodes through the NDR material.
摘要翻译： 电路部件包括第一电极，多个第二电极和负的差分电阻（NDR）材料。 第一电极和多个第二电极连接到NDR材料，并且当在第一电极和多个第二电极之间施加足够的电压时，NDR材料将第一电极电连接到多个第二电极中的一个 的第二电极通过NDR材料。
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公开(公告)号：US08207593B2
公开(公告)日：2012-06-26
申请号：US12510589
申请日：2009-07-28
IPC分类号： H01L29/00
CPC分类号： H01L45/04 , H01L27/2463 , H01L45/1233 , H01L45/1273 , H01L45/146 , Y10S977/773
摘要： A memristor includes a first electrode having a first surface, at least one electrically conductive nanostructure provided on the first surface, in which the at least one electrically conductive nanostructure is relatively smaller than a width of the first electrode, a switching material positioned upon said first surface, in which the switching material covers the at least one electrically conductive nanostructure, and a second electrode positioned upon the switching material substantially in line with the at least one electrically conductive nanostructure, in which an active region in the switching material is formed substantially between the at least one electrically conductive nanostructure and the first electrode.
摘要翻译： 忆阻器包括具有第一表面的第一电极，设置在第一表面上的至少一个导电纳米结构，其中至少一个导电纳米结构相对小于第一电极的宽度，开关材料位于所述第一表面上 其中所述开关材料覆盖所述至少一个导电纳米结构，以及位于所述开关材料上的基本上与所述至少一个导电纳米结构一致的第二电极，其中所述开关材料中的有源区域基本上形成在所述至少一个导电纳米结构之间 所述至少一个导电纳米结构和所述第一电极。
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公开(公告)号：US20110024716A1
公开(公告)日：2011-02-03
申请号：US12510589
申请日：2009-07-28
CPC分类号： H01L45/04 , H01L27/2463 , H01L45/1233 , H01L45/1273 , H01L45/146 , Y10S977/773
摘要： A memristor includes a first electrode having a first surface, at least one electrically conductive nanostructure provided on the first surface, in which the at least one electrically conductive nanostructure is relatively smaller than a width of the first electrode, a switching material positioned upon said first surface, in which the switching material covers the at least one electrically conductive nanostructure, and a second electrode positioned upon the switching material substantially in line with the at least one electrically conductive nanostructure, in which an active region in the switching material is formed substantially between the at least one electrically conductive nanostructure and the first electrode.
摘要翻译： 忆阻器包括具有第一表面的第一电极，设置在第一表面上的至少一个导电纳米结构，其中至少一个导电纳米结构相对小于第一电极的宽度，开关材料位于所述第一表面上 其中所述开关材料覆盖所述至少一个导电纳米结构，以及位于所述开关材料上的基本上与所述至少一个导电纳米结构一致的第二电极，其中所述开关材料中的有源区域基本上形成在所述至少一个导电纳米结构之间 所述至少一个导电纳米结构和所述第一电极。
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公开(公告)号：US20120104342A1
公开(公告)日：2012-05-03
申请号：US13382281
申请日：2009-07-13
IPC分类号： H01L45/00
CPC分类号： H01L45/145 , H01L27/2463 , H01L45/08 , H01L45/1233 , H01L45/142 , H01L45/146 , H01L45/1616
摘要： A memristive device includes a first electrode, a second electrode crossing the first electrode at a non-zero angle, and an active region disposed between the first and second electrodes. The active region has a controlled defect profile throughout its thickness.
摘要翻译： 忆阻器件包括第一电极，非零角度与第一电极交叉的第二电极以及设置在第一和第二电极之间的有源区。 活性区域在整个厚度上具有受控的缺陷分布。
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公开(公告)号：US08063395B2
公开(公告)日：2011-11-22
申请号：US12570286
申请日：2009-09-30
申请人： Qiangfei Xia , Jianhua Yang , Shih-Yuan Wang
发明人： Qiangfei Xia , Jianhua Yang , Shih-Yuan Wang
IPC分类号： H01L47/00
CPC分类号： H01L45/08 , H01L27/2463 , H01L45/1206 , H01L45/1233 , H01L45/1253 , H01L45/145 , H01L45/146 , H01L45/148 , H01L45/16
摘要： A nanoscale switching device comprises at least two electrodes, each of a nanoscale width; and an active region disposed between and in electrical contact with the electrodes, the active region containing a switching material capable of carrying a species of dopants and transporting the dopants under an electrical field, wherein at least one of the electrodes comprises an amorphous conductive material.
摘要翻译： 纳米级切换装置包括至少两个电极，每个电极具有纳米级宽度; 以及设置在电极之间并且与电极电接触的有源区域，所述有源区域包含能够承载一种掺杂剂并在电场下传输掺杂剂的开关材料，其中所述电极中的至少一个包括非晶导电材料。
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