Process sequence to achieve global planarity using a combination of fixed abrasive and high selectivity slurry for pre-metal dielectric CMP applications
    1.
    发明授权
    Process sequence to achieve global planarity using a combination of fixed abrasive and high selectivity slurry for pre-metal dielectric CMP applications 失效
    使用固定研磨剂和高选择性浆料的组合来实现全金属平面度的工艺顺序用于预金属介电CMP应用

    公开(公告)号:US08211325B2

    公开(公告)日:2012-07-03

    申请号:US12757767

    申请日:2010-04-09

    摘要: A method and apparatus for polishing or planarizing a pre-metal dielectric layer by a chemical mechanical polishing process are provided. The method comprises providing a semiconductor substrate having feature definitions formed thereon, forming a pre-metal dielectric layer over the substrate, wherein the as-deposited pre-metal dielectric layer has an uneven surface topography, and planarizing the uneven surface topography of the pre-metal dielectric layer using chemical mechanical polishing techniques, wherein planarizing the uneven surface topography comprises polishing the pre-metal dielectric layer with a fixed abrasive polishing pad and a first polishing composition to remove a bulk portion of the pre-metal dielectric layer and achieve a first predetermined planarity, and polishing the pre-metal dielectric layer with a non-abrasive polishing pad and high selectivity slurry to remove a residual portion of the pre-metal dielectric and achieve a second predetermined planarity.

    摘要翻译: 提供了一种通过化学机械抛光工艺抛光或平坦化预金属介电层的方法和设备。 该方法包括提供其上形成有特征定义的半导体衬底,在衬底上形成预金属介电层,其中所沉积的预金属介电层具有不平坦的表面形貌,并且平坦化前预处理电介质层的不平坦表面形貌, 使用化学机械抛光技术的金属介电层,其中平坦化所述不平坦表面形貌包括用固定的研磨抛光垫和第一抛光组合物抛光所述预金属介电层,以去除所述金属前介电层的主体部分并实现第一 预定的平面度,以及用非磨料抛光垫和高选择性浆料抛光预金属介电层,以去除前金属电介质的剩余部分并实现第二预定平面度。

    PROCESS SEQUENCE TO ACHIEVE GLOBAL PLANARITY USING A COMBINATION OF FIXED ABRASIVE AND HIGH SELECTIVITY SLURRY FOR PRE-METAL DIELECTRIC CMP APPLICATIONS
    2.
    发明申请
    PROCESS SEQUENCE TO ACHIEVE GLOBAL PLANARITY USING A COMBINATION OF FIXED ABRASIVE AND HIGH SELECTIVITY SLURRY FOR PRE-METAL DIELECTRIC CMP APPLICATIONS 失效
    使用固定磨料和高选择性浆液的组合实现全球平面化的前处理顺序用于预金属介电CMP应用

    公开(公告)号:US20100285666A1

    公开(公告)日:2010-11-11

    申请号:US12757767

    申请日:2010-04-09

    IPC分类号: H01L21/306

    摘要: A method and apparatus for polishing or planarizing a pre-metal dielectric layer by a chemical mechanical polishing process are provided. The method comprises providing a semiconductor substrate having feature definitions formed thereon, forming a pre-metal dielectric layer over the substrate, wherein the as-deposited pre-metal dielectric layer has an uneven surface topography, and planarizing the uneven surface topography of the pre-metal dielectric layer using chemical mechanical polishing techniques, wherein planarizing the uneven surface topography comprises polishing the pre-metal dielectric layer with a fixed abrasive polishing pad and a first polishing composition to remove a bulk portion of the pre-metal dielectric layer and achieve a first predetermined planarity, and polishing the pre-metal dielectric layer with a non-abrasive polishing pad and high selectivity slurry to remove a residual portion of the pre-metal dielectric and achieve a second predetermined planarity.

    摘要翻译: 提供了一种通过化学机械抛光工艺抛光或平坦化预金属介电层的方法和设备。 该方法包括提供其上形成有特征定义的半导体衬底,在衬底上形成预金属介电层,其中所沉积的预金属介电层具有不平坦的表面形貌,并且平坦化前预处理电介质层的不平坦表面形貌, 使用化学机械抛光技术的金属介电层,其中平坦化所述不平坦表面形貌包括用固定的研磨抛光垫和第一抛光组合物抛光所述预金属介电层,以去除所述金属前介电层的主体部分并实现第一 预定的平面度,以及用非磨料抛光垫和高选择性浆料抛光预金属介电层,以去除前金属电介质的剩余部分并实现第二预定平面度。

    Methods for electrochemical processing with pre-biased cells
    3.
    发明申请
    Methods for electrochemical processing with pre-biased cells 审中-公开
    使用预偏置电池进行电化学处理的方法

    公开(公告)号:US20070158207A1

    公开(公告)日:2007-07-12

    申请号:US11326647

    申请日:2006-01-06

    IPC分类号: B23H3/00

    摘要: A method for electrochemically processing a substrate is provided. In one embodiment, the method includes performing a conditioning procedure on a processing pad having a plurality of process cells, energizing the process cells by applying a voltage to the conditioned processing pad, placing a substrate having at least a conductive layer disposed thereon on the energized pad, and removing at least a portion of the conductive layer in the energized process cells. In another embodiment, a method for polishing a substrate includes placing an unused conductive pad having a plurality of process cells on a platen of a processing system, breaking in the pad on the platen, energizing the process cells by applying a voltage to the broken-in pad, placing a substrate having at least a conductive layer disposed thereon on the energized pad, and removing at least a portion of the conductive layer in the energized cells.

    摘要翻译: 提供了一种用于电化学处理衬底的方法。 在一个实施例中,该方法包括在具有多个处理单元的处理垫上执行调节程序,通过向经调节的处理垫施加电压来激励处理单元,将其上布置有至少一个导电层的基板放置在通电 并且在通电的处理单元中去除导电层的至少一部分。 在另一个实施例中,用于抛光衬底的方法包括将具有多个处理单元的未使用的导电焊盘放置在处理系统的压板上,在压板上的焊盘中断开, 在衬垫中,将具有至少其上设置有导电层的衬底放置在通电焊盘上,以及去除通电电池中的至少一部分导电层。

    Method and apparatus for electroprocessing a substrate with edge profile control
    4.
    发明授权
    Method and apparatus for electroprocessing a substrate with edge profile control 失效
    用边缘轮廓控制对基底进行电处理的方法和装置

    公开(公告)号:US07422982B2

    公开(公告)日:2008-09-09

    申请号:US11483843

    申请日:2006-07-07

    IPC分类号: H01L21/302 H01L21/461

    摘要: A method and apparatus for electroprocessing a substrate is provided. In one embodiment, a method for electroprocessing a substrate includes the steps of biasing a first electrode to establish a first electroprocessing zone between the electrode and the substrate, and biasing a second electrode disposed radially inward of the first electrode with a bias that is different than the bias applied to the first electrode. In one embodiment, the first electrode is coated with an inert material and in this way the same polish rate is obtained with a lower potential level applied to the first electrode.

    摘要翻译: 提供了一种用于电子处理衬底的方法和装置。 在一个实施例中,用于对衬底进行电处理的方法包括以下步骤:偏置第一电极以在电极和衬底之间建立第一电处理区,并且以不同于第一电极的偏压来偏置设置在第一电极的径向内侧的第二电极 施加到第一电极的偏压。 在一个实施例中,第一电极被涂覆有惰性材料,并且以这种方式获得相同的抛光速率,并且施加到第一电极的较低电位电平。

    Process and composition for electrochemical mechanical polishing
    5.
    发明申请
    Process and composition for electrochemical mechanical polishing 审中-公开
    电化学机械抛光的工艺和组成

    公开(公告)号:US20060249395A1

    公开(公告)日:2006-11-09

    申请号:US11389867

    申请日:2006-03-27

    IPC分类号: C09K13/00 B23H9/00 B23H3/00

    CPC分类号: C09K3/1463 B23H5/08

    摘要: Compositions and methods for processing a substrate having a conductive material layer disposed thereon are provided. In one embodiment, a composition for processing a substrate having a conductive material layer disposed thereon is provided which composition includes an acid based electrolyte, a chelating agent, a corrosion inhibitor, a passivating polymeric material, a pH adjusting agent, a leveler a solvent, and a pH between about 3 and about 10. The composition is used in a method to form a passivation layer on the conductive material layer, abrading the passivation layer to expose a portion of the conductive material layer, applying a bias to the substrate, and removing the conductive material layer.

    摘要翻译: 提供了用于处理其上设置有导电材料层的基板的组合物和方法。 在一个实施方案中,提供了一种用于处理其上设置有导电材料层的基材的组合物,其组成包括酸性电解质,螯合剂,缓蚀剂,钝化聚合物材料,pH调节剂,整理剂,溶剂, 并且pH在约3至约10之间。该组合物用于在导电材料层上形成钝化层的方法,研磨钝化层以暴露导电材料层的一部分,向衬底施加偏压,以及 去除导电材料层。

    APPARATUS FOR ELECTROPROCESSING A SUBSTRATE WITH EDGE PROFILE CONTROL
    6.
    发明申请
    APPARATUS FOR ELECTROPROCESSING A SUBSTRATE WITH EDGE PROFILE CONTROL 审中-公开
    用于电镀具有边缘型材控制的基板的装置

    公开(公告)号:US20080035474A1

    公开(公告)日:2008-02-14

    申请号:US11877356

    申请日:2007-10-23

    IPC分类号: C25B9/00

    摘要: Embodiments of the invention generally provide methods and apparatuses for electroprocessing a substrate. In one embodiment, an apparatus for electrochemically processing the substrate includes a conductive processing surface adapted for processing a substrate thereon, and a polishing head for retaining the substrate against the processing surface. At least one drive mechanism provides relative motion between the conductive processing surface and the substrate. A first electrode is disposed below the conductive processing surface and is comprised of a first material. A second electrode is disposed radially inward of the first electrode and comprised of a second material.

    摘要翻译: 本发明的实施方案通常提供用于对基底进行电处理的方法和装置。 在一个实施例中,用于电化学处理衬底的装置包括适于在其上处理衬底的导电处理表面和用于将衬底保持在处理表面上的抛光头。 至少一个驱动机构在导电处理表面和基底之间提供相对运动。 第一电极设置在导电处理表面下方并且由第一材料构成。 第二电极设置在第一电极的径向内侧并由第二材料构成。

    Method and apparatus for foam removal in an electrochemical mechanical substrate polishing process
    8.
    发明申请
    Method and apparatus for foam removal in an electrochemical mechanical substrate polishing process 审中-公开
    在电化学机械衬底抛光过程中泡沫去除的方法和装置

    公开(公告)号:US20070181442A1

    公开(公告)日:2007-08-09

    申请号:US11346891

    申请日:2006-02-03

    IPC分类号: B23H7/00

    摘要: The embodiments of the invention generally relate to a method and apparatus for processing a substrate where reduced defect formation is desired. Embodiments of the invention may be beneficially practiced in chemical mechanical polishing and electrochemical mechanical polishing processes, among other processes where reduction in defect formation due to foam formation is desired. In one embodiment, a processing system for planarizing a substrate is provided that includes a platen, a pad disposed on the platen, a carrier head configured to retain the substrate against the pad while contacting an electronically conductive processing solution; and a foam removal assembly. The foam removal assembly is configured to remove foam from the electrically conductive processing solution, wherein a gap exists between a surface of the electrically conductive processing solution and a bottom edge of the foam removal assembly.

    摘要翻译: 本发明的实施例一般涉及用于处理需要减少缺陷形成的衬底的方法和装置。 在化学机械抛光和电化学机械抛光工艺中,本发明的实施例以及其它需要减少形成泡沫的缺陷形成工艺也是有益的。 在一个实施例中,提供了一种用于平坦化衬底的处理系统,其包括压板,设置在压板上的衬垫,构造成在接触电子导电处理溶液的同时将衬底保持抵靠衬垫的载体头; 和泡沫去除组件。 泡沫去除组件被配置为从导电处理溶液中除去泡沫,其中在导电处理溶液的表面和泡沫去除组件的底部边缘之间存在间隙。

    ABRASIVE COMPOSITION FOR ELECTROCHEMICAL MECHANICAL POLISHING
    10.
    发明申请
    ABRASIVE COMPOSITION FOR ELECTROCHEMICAL MECHANICAL POLISHING 审中-公开
    电化学机械抛光磨料组合物

    公开(公告)号:US20070254485A1

    公开(公告)日:2007-11-01

    申请号:US11735801

    申请日:2007-04-16

    摘要: Compositions and methods for processing a substrate having a conductive material layer disposed thereon are provided. In certain embodiments, a composition for processing a substrate having a conductive material layer disposed thereon is provided wherein the composition includes an acid based electrolyte, a chelating agent, a corrosion inhibitor, a passivating polymeric material, an amount of a pH adjusting agent sufficient to provide a pH between about 3 and about 10, anionic polymer abrasive particles, and a solvent. The composition is used in a method to form a passivation layer on the conductive material layer, abrading the passivation layer to expose a portion of the conductive material layer, applying a bias to the substrate, and removing the conductive material layer.

    摘要翻译: 提供了用于处理其上设置有导电材料层的基板的组合物和方法。 在某些实施方案中,提供了一种用于处理其上设置有导电材料层的基材的组合物,其中所述组合物包括酸性电解质,螯合剂,缓蚀剂,钝化聚合物材料,一定量的pH调节剂, 提供约3至约10个的阴离子聚合物研磨剂颗粒和溶剂之间的pH。 该组合物用于在导电材料层上形成钝化层的方法,研磨钝化层以暴露导电材料层的一部分,向衬底施加偏压,以及去除导电材料层。