摘要:
An electrical connection includes a first wire bonded to adjacent bond pads proximate to an edge of a die and a second wire having one end bonded to a die bond pad distal to the die edge and a second end bonded to a lead finger of a lead frame or a connection pad of a substrate. The second wire crosses and is supported by the first wire. The first wire acts as a brace that prevents the second wire from touching the edge of the die. The first wire also prevents the second wire from excessive lateral movement during encapsulation.
摘要:
A semiconductor wafer having multiple dies has a partially metallized backside. After wafer dicing, each of the multiple dies has, on its backside, a metallized area surrounded by a peripheral non-metallization ring. The non-metallization ring allows for easier optical inspection of the dies for determining the extent of any backside chipping caused by the wafer dicing. The peripheral non-metallization rings are generated by not metalizing the areas flanking the saw streets of the wafer.
摘要:
A wire bonding machine and a method for testing wire bond connection s using the wire bonding machine. The method includes providing a semiconductor assembly that has a semiconductor die mounted to a substrate, each of which has bonding pads. The method includes bonding a wire to one of the bonding pads to form a first wire bond. A shear force then is applied to the first wire bond. A fault signal is generated when a sensor detects the first wire bond moving during application of the shear force.
摘要:
A lead frame having a recessed die bond area. The lead frame has top and bottom surfaces and a first lead frame thickness defined as the distance between the top and bottom surfaces. The lead frame has a die bond area surface located within a reduced die bond area. A second thickness is defined as the distance between the die bond area surface and the bottom surface. The second lead frame thickness is less than the first lead frame thickness such that a semiconductor die disposed and attached to the die bond area surface has a reduced overall package thickness. A side wall formed between the die bond area surface and the top surface contains the adhesive material used to attach the die, which reduces adhesive bleeding and prevents wire bonding contamination.
摘要:
A lead frame for providing electrical interconnection to a semiconductor die has a generally rectangular flag area having first and second major surfaces and four sides. The flag area is sized and shaped to receive a semiconductor die on one of the first and second major surfaces. A first row of leads is located adjacent to a first one of the four sides of the flag area and a second row of leads is located adjacent to a second one of the four sides of the flag area, where the second one of the four sides is adjacent to the first one of the four sides. The remaining two sides do not have any adjacent leads.
摘要:
A device for cleaning the surface of a molybdenum wire at high temperature, comprises a wire pay-off mechanism, a first wire guiding wheel, a cleaning mechanism, a second wire guiding wheel, and a wire take-up mechanism; wherein the two ends of a furnace body of the cleaning mechanism are provided with an inlet hole and an outlet hole for the molybdenum wire. Electrodes connected to a power supply are provided at the inlet hole and in a central part inside the furnace body. An upper part of the furnace body is provided with a gas outlet and a lower part thereof is provided with a wet hydrogen inlet; a heating section is formed between the electrode located at the inlet hole and the electrode located in the central part, and a cooling section is formed between the electrode located in the central part and the outlet hole.
摘要:
A process for assembling a Chip-On-Lead packaged semiconductor device includes the steps of: mounting and sawing a wafer to provide individual semiconductor dies; performing a first molding operation on a lead frame; depositing epoxy on the lead frame via a screen printing process; attaching one of the singulated dies on the lead frame with the epoxy, where the die attach is done at room temperature; and curing the epoxy in an oven. Throughput improvements may be ascribed to not including a hot die attach process. An optional plasma cleaning step may be performed, which greatly improves wire bonding quality and a second molding quality. In addition, since a first molding operation is performed before the formation of epoxy to avoid the problem of the epoxy hanging in the air, the delamination risk between the epoxy and the die is avoided.
摘要:
A lead frame sheet made of an electrically conductive material has lead frames integrally formed on it. Spacing members also are formed from the sheet. A first one of the spacing members is proximal to a first longitudinal edge of the sheet and a second one of the spacing members is proximal to a second longitudinal edge of the sheet. The spacing members extend from an underside surface of the sheet and, in use, space the underside surface from a planar support such as a surface of a heating block.
摘要:
A semiconductor package is assembled using first and second lead frames. The first lead frame includes a die flag and the second lead frame includes lead fingers. When the first and second lead frames are mated, the lead fingers surround the die flag. Side surfaces of the die flag are partially etched to form an extended die attach surface on the die flag, and portions of the top surface of each of the lead fingers also are partially etched to form lead finger surfaces that are complementary with the etched side surfaces of the die flag. A semiconductor die is attached to the extended die attach surface and bond pads of the semiconductor die are electrically connected to the lead fingers. An encapsulating material covers the die, electrical connections, and top surfaces of the die flag and lead fingers.
摘要:
A semiconductor device includes a lead frame having a die support area and a plurality of inner and outer row leads surrounding the die support area, and a semiconductor die mounted on the die support area and electrically connected to the leads with bond wires. A molding material encapsulates the semiconductor die, the bond wires, and the leads, and defines a package body. The semiconductor device further includes connection bars extending vertically from the leads to a top surface of the package body. The connection bars connect the inner row leads to respective ones of the outer row leads before the molding process is performed.