公开(公告)号：US06589436B1

公开(公告)日：2003-07-08

申请号：US09593990

申请日：2000-06-14

申请人： Jila Tabib ,  Yiping Hsiao ,  Richard Hsiao ,  Richard T. Campbell ,  Ciaran A. Fox

发明人： Jila Tabib ,  Yiping Hsiao ,  Richard Hsiao ,  Richard T. Campbell ,  Ciaran A. Fox

IPC分类号： G11B1732

CPC分类号： G11B5/6005 ,  Y10T29/49041

摘要： Provided is a reactive ion etching (RIE) method for use in altering the flatness of a slider, whereby a slider or row of sliders is placed within a RIE apparatus. The apparatus comprises essentially an electrode within a chamber having an inlet and an outlet. The electrode is controlled by a bias power source. A source power is provided to the chamber to generate the plasma, wherein a gas or gas mixture is first introduced to the chamber and the source power is adjusted to maximize the plasma composition of ions and reactive neutral species. The ions and reactive neutral species are generated from reactive chemical species such as CHF3 and other F-containing species. An inert gas such as Argon may also be present. Typically, TiC within the Al2O3 matrix of the slider substrate surface is etched at a faster rate than other substrate species.

摘要翻译： 提供了用于改变滑块的平坦度的反应离子蚀刻（RIE）方法，由此在RIE装置内放置滑块或滑块排。 该设备基本上包括具有入口和出口的腔室内的电极。 电极由偏压电源控制。 将源功率提供给腔室以产生等离子体，其中首先将气体或气体混合物引入腔室，并且调节源功率以最大化离子和反应性中性物质的血浆组成。 离子和反应性中性物质由反应性化学物质如CHF3和其他含F物质产生。 惰性气体如氩气也可能存在。 通常，滑块衬底表面的Al 2 O 3基体内的TiC以比其它衬底物质更快的速度被蚀刻。

公开(公告)号：US5264981A

公开(公告)日：1993-11-23

申请号：US745039

申请日：1991-08-14

申请人： Richard T. Campbell ,  Jyh-Shuey J. Lo

发明人： Richard T. Campbell ,  Jyh-Shuey J. Lo

IPC分类号： G01R33/09 ,  C21D1/04 ,  G11B5/31 ,  G11B5/33 ,  G11B5/39 ,  H01F10/14 ,  H01F10/32 ,  H01F41/30 ,  H01L43/08 ,  C23C30/00 ,  G11B5/11 ,  G11B5/147

CPC分类号： B82Y25/00 ,  B82Y40/00 ,  G11B5/31 ,  G11B5/3146 ,  G11B5/3903 ,  H01F10/147 ,  H01F10/32 ,  H01F41/302 ,  C21D1/04 ,  Y10T428/1129

摘要： A soft magnetic film includes a laminated structure having an alternating plurality of first magnetic and second magnetic film. The first magnetic films is of a predetermined thickness range and is made of a magnetic alloy of nickel, iron and nitrogen with the nitrogen present from greater than zero to 20 atomic percent. The second magnetic film is of a predetermined thickness range and is made of a magnetic alloy of iron and nitrogen with the nitrogen present from greater than zero to about 20 atomic percent. The films can be annealed in an applied magnetic field. The multilayer films have application as pole pieces and shields in magnetic heads. The magnetic heads are for use in dynamic storage systems including disk and tape media.

摘要翻译： 软磁性膜包括具有交替的多个第一磁性和第二磁性膜的叠层结构。 第一磁性膜具有预定的厚度范围，并且由镍，铁和氮的磁性合金制成，其中存在大于零至20原子百分比的氮。 第二磁性膜具有预定的厚度范围，并且由铁和氮的磁性合金制成，氮存在从大约零到大约20原子百分比。 膜可以在施加的磁场中退火。 多层薄膜可用作磁头中的极片和屏蔽。 磁头用于动态存储系统，包括磁盘和磁带介质。