公开(公告)号：US08007914B2

公开(公告)日：2011-08-30

申请号：US10528765

申请日：2003-09-18

Applicant: Jin-Xing Li ,  Boon-Koon Ow

Inventor： Jin-Xing Li ,  Boon-Koon Ow

IPC: B32B9/04 ,  B32B13/04 ,  B32B9/00 ,  B32B19/00

CPC classification number: H01L21/2205

Abstract: A two layer LTO backside seal for a wafer. The two layer LTO backside seal includes a low stress LTO layer having a first major side and a second major side, the first major5 side of the low stress LTO layer adjacent to one major side of the wafer. The two layer LTO backside seal further includes a high stress LTO layer having a first major side and second major side, the first major side of the high stress LTO layer adjacent the second major side of the low stress LTO layer.

Abstract translation: 用于晶片的两层LTO背面密封。 双层LTO背面密封包括具有第一主侧和第二主侧的低应力LTO层，低应力LTO层的第一主要5侧与晶片的一个主侧相邻。 两层LTO背侧密封件还包括具有第一主侧和第二主侧的高应力LTO层，高应力LTO层的第一主侧邻近低应力LTO层的第二主侧。

公开(公告)号：US20070065671A1

公开(公告)日：2007-03-22

申请号：US10528765

申请日：2003-09-18

Applicant: Jin-Xing Li

Inventor： Jin-Xing Li

IPC: H05H1/24

CPC classification number: H01L21/2205

Abstract: A two layer LTO backside seal for a wafer. The two layer LTO backside seal includes a low stress LTO layer having a first major side and a second major side, the first major5 side of the low stress LTO layer adjacent to one major side of the wafer. The two layer LTO backside seal further includes a high stress LTO layer having a first major side and second major side, the first major side of the high stress LTO layer adjacent the second major side of the low stress LTO layer.

Abstract translation: 用于晶片的两层LTO背面密封。 双层LTO背面密封包括具有第一主侧和第二主侧的低应力LTO层，低应力LTO层的第一主要5侧与晶片的一个主侧相邻。 两层LTO背侧密封件还包括具有第一主侧和第二主侧的高应力LTO层，高应力LTO层的第一主侧邻近低应力LTO层的第二主侧。