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    Electroplating apparatus with vented electrolyte manifold
    1.
    发明授权
    Electroplating apparatus with vented electrolyte manifold 有权
    带排气电解液歧管的电镀设备

    公开(公告)号：US08475637B2

    公开(公告)日：2013-07-02

    申请号：US12337147

    申请日：2008-12-17

    申请人： Jingbin Feng ,  Zhian He ,  Robert Rash ,  Steven T. Mayer

    发明人： Jingbin Feng ,  Zhian He ,  Robert Rash ,  Steven T. Mayer

    IPC分类号： C25D17/00 ,  C25D21/04

    CPC分类号： C25D7/123 ,  C25D17/001 ,  C25D17/002

    摘要： Embodiments related to increasing a uniformity of an electroplated film are disclosed. For example, one disclosed embodiment provides an electroplating apparatus comprising a plating chamber, a work piece holder, a cathode contact configured to electrically contact a work piece, and an anode contact configured to electrically contact an anode disposed in the plating chamber. A diffusing barrier is disposed between the cathode contact and the anode contact to provide a uniform electrolyte flow to the work piece, and electrolyte delivery and return paths are provided for delivering electrolyte to and away from the plating chamber. Additionally, a vented electrolyte manifold is disposed in the electrolyte delivery path immediately upstream of the plating chamber, the vented electrolyte manifold comprising one or more electrolyte delivery openings that open to the plating chamber and one or more vents that open to a location other than the plating chamber.

    摘要翻译： 公开了与提高电镀膜的均匀性有关的实施例。 例如，一个公开的实施例提供了一种电镀设备，其包括电镀室，工件保持器，构造成电接触工件的阴极接触件和被配置为电接触设置在电镀室中的阳极的阳极接触件。 扩散阻挡层设置在阴极接触件和阳极接触件之间，以提供均匀的电解质流向工件，并且提供电解质输送和返回路径用于将电解质输送到电镀室和远离电镀室。 另外，排气的电解液歧管设置在紧邻镀室的上游的电解质输送路径中，排出的电解质歧管包括一个或多个向电镀室敞开的电解质输送开口，以及一个或多个通向出口 电镀室。

    Electroplating Apparatus with Vented Electrolyte Manifold
    2.
    发明申请
    Electroplating Apparatus with Vented Electrolyte Manifold 有权
    带通风电解质歧管的电镀设备

    公开(公告)号：US20100147679A1

    公开(公告)日：2010-06-17

    申请号：US12337147

    申请日：2008-12-17

    申请人： Jingbin Feng ,  Zhian He ,  Robert Rash ,  Steven T. Mayer

    发明人： Jingbin Feng ,  Zhian He ,  Robert Rash ,  Steven T. Mayer

    IPC分类号： C25D17/00

    CPC分类号： C25D7/123 ,  C25D17/001 ,  C25D17/002

    摘要： Embodiments related to increasing a uniformity of an electroplated film are disclosed. For example, one disclosed embodiment provides an electroplating apparatus comprising a plating chamber, a work piece holder, a cathode contact configured to electrically contact a work piece, and an anode contact configured to electrically contact an anode disposed in the plating chamber. A diffusing barrier is disposed between the cathode contact and the anode contact to provide a uniform electrolyte flow to the work piece, and electrolyte delivery and return paths are provided for delivering electrolyte to and away from the plating chamber. Additionally, a vented electrolyte manifold is disposed in the electrolyte delivery path immediately upstream of the plating chamber, the vented electrolyte manifold comprising one or more electrolyte delivery openings that open to the plating chamber and one or more vents that open to a location other than the plating chamber.

    摘要翻译： 公开了与提高电镀膜的均匀性有关的实施例。 例如，一个公开的实施例提供了一种电镀设备，其包括电镀室，工件保持器，构造成电接触工件的阴极接触件和被配置为电接触设置在电镀室中的阳极的阳极接触件。 扩散阻挡层设置在阴极接触件和阳极接触件之间，以提供均匀的电解质流向工件，并且提供电解质输送和返回路径用于将电解质输送到电镀室和远离电镀室。 另外，排气的电解液歧管设置在紧邻镀室的上游的电解质输送路径中，排出的电解质歧管包括一个或多个向电镀室敞开的电解质输送开口，以及一个或多个通向出口 电镀室。

    Plating method and apparatus with multiple internally irrigated chambers
    3.
    发明授权
    Plating method and apparatus with multiple internally irrigated chambers 有权
    具有多个内部灌溉室的电镀方法和装置

    公开(公告)号：US08262871B1

    公开(公告)日：2012-09-11

    申请号：US12640992

    申请日：2009-12-17

    申请人： Steven T. Mayer ,  Shantinath Ghongadi ,  Kousik Ganesan ,  Zhian He ,  Jingbin Feng

    发明人： Steven T. Mayer ,  Shantinath Ghongadi ,  Kousik Ganesan ,  Zhian He ,  Jingbin Feng

    IPC分类号： C25B9/00 ,  C25D17/00

    CPC分类号： C25D17/001 ,  C25D5/08 ,  C25D17/002 ,  C25D17/008

    摘要： An apparatus for electroplating a layer of metal onto a work piece surface includes a membrane separating the chamber of the apparatus into a catholyte chamber and an anolyte chamber. In the catholyte chamber is a catholyte manifold region that includes a catholyte manifold and at least one flow distribution tube. The catholyte manifold and at least one flow distribution tube serve to mix and direct catholyte flow in the catholyte chamber. The provided configuration effectively reduces failure and improves the operational ranges of the apparatus.

    摘要翻译： 用于将金属层电镀到工件表面上的装置包括将装置的室分离成阴极电解液室和阳极电解液室的膜。 在阴极电解液室中是阴极电解液歧管区域，其包括阴极电解液歧管和至少一个流量分布管。 阴极电解液歧管和至少一个分流管用于混合和引导阴极电解液在阴极电解液室中的流动。 所提供的配置有效地减少故障并改善设备的操作范围。

    Wafer chuck for use in edge bevel removal of copper from silicon wafers
    10.
    发明授权
    Wafer chuck for use in edge bevel removal of copper from silicon wafers 有权
    用于从硅晶片去除铜的边缘斜面的晶片卡盘

    公开(公告)号：US06967174B1

    公开(公告)日：2005-11-22

    申请号：US10357999

    申请日：2003-02-03

    申请人： Steven T. Mayer ,  Steve Taatjes ,  Andy McCutcheon ,  Jim Schall ,  Jingbin Feng

    发明人： Steven T. Mayer ,  Steve Taatjes ,  Andy McCutcheon ,  Jim Schall ,  Jingbin Feng

    IPC分类号： H01L21/00 ,  H01L21/302

    CPC分类号： H01L21/6708 ,  H01L21/67051

    摘要： A wafer chuck includes alignment members that allows a semiconductor wafer to be properly aligned on the chuck without using a separate alignment stage. The alignment members may be cams, for example, attached to arms of the wafer chuck. These members may assume an alignment position when a robot arm places the wafer on the chuck. In this position, they guide the wafer into a proper alignment position with respect to the chuck. During rotation at a particular rotational speed, the alignment members move away from the wafer to allow liquid etchant to flow over the entire edge region of the wafer. At still higher rotational speeds, the wafer is clamped into position to prevent it from flying off the chuck. A clamping cam or other device (such as the alignment member itself) may provide the clamping.

    摘要翻译： 晶片卡盘包括对准部件，其允许半导体晶片在不使用单独的对准阶段的情况下适当地对准卡盘。 对准构件可以是凸轮，例如，附接到晶片卡盘的臂。 当机器人臂将晶片放置在卡盘上时，这些构件可以采取对准位置。 在这个位置上，它们将晶片引导到相对于卡盘的适当对准位置。 在以特定转速旋转期间，对准构件远离晶片移动以允许液体蚀刻剂流过晶片的整个边缘区域。 在更高的旋转速度下，晶片被夹紧就位以防止其从卡盘上飞走。 夹紧凸轮或其他装置（例如对准构件本身）可以提供夹紧。