公开(公告)号：US5510151A

公开(公告)日：1996-04-23

申请号：US943991

申请日：1992-09-11

申请人： Jinsho Matsuyama ,  Toshimitsu Kariya ,  Yasushi Fujioka ,  Tetsuya Takei ,  Katsumi Nakagawa ,  Masahiro Kanai ,  Hiroshi Echizen

发明人： Jinsho Matsuyama ,  Toshimitsu Kariya ,  Yasushi Fujioka ,  Tetsuya Takei ,  Katsumi Nakagawa ,  Masahiro Kanai ,  Hiroshi Echizen

IPC分类号： C23C16/511 ,  C23C16/54 ,  H01J37/32 ,  H01L21/205 ,  H01L29/872 ,  H01L31/076 ,  H01L31/20 ,  C23C16/00

CPC分类号： H01L31/076 ,  C23C16/511 ,  C23C16/545 ,  H01J37/32192 ,  H01J37/32229 ,  H01J37/3277 ,  H01L21/02425 ,  H01L21/0245 ,  H01L21/02505 ,  H01L21/02532 ,  H01L21/0262 ,  H01L29/872 ,  H01L31/202 ,  H01L31/204 ,  H01L31/206 ,  Y02E10/548 ,  Y02P70/521

摘要： A microwave plasma CVD method for continuously forming a large area and length functional deposited film, the method comprises: continuously moving a substrate web in the longitudinal direction by paying out it by a pay-out mechanism and taking it up by a take-up mechanism; establishing a substantially enclosed film-forming chamber by curving and projecting the moving substrate web to form a columnar portion to be the circumferential wall of the film-forming chamber as the substrate is moving from the pay-out mechanism toward the take-up mechanism; introducing a film-forming raw material gas through a gas feeder into the film-forming chamber; and simultaneously, radiating a microwave energy in the film-forming chamber by using a microwave applicator, which is so designed that it can radiate a microwave energy in the direction parallel to the microwave propagating direction, to generate plasma in the film-forming chamber, thereby continuously forming a deposited film on the inner wall face of the continuously moving circumferential wall exposed to the plasma.

摘要翻译： 一种用于连续地形成大面积和长度的功能性沉积膜的微波等离子体CVD方法，所述方法包括：通过用放出机构支付并通过卷取机构将其沿着纵向方向延伸移动， ; 通过弯曲和突出移动的基材卷材来形成基本上封闭的成膜室，以形成作为基板从放出机构朝向卷取机构移动的成膜室的圆周壁的柱状部分; 将成膜原料气体通过气体供给器引入成膜室; 并且同时通过使用微波施加器在成膜室内辐射微波能量，微波施加器被设计成能够沿与微波传播方向平行的方向辐射微波能量，以在成膜室中产生等离子体， 从而在暴露于等离子体的连续移动的周壁的内壁面上连续地形成沉积膜。

公开(公告)号：US5130170A

公开(公告)日：1992-07-14

申请号：US543499

申请日：1990-06-26

申请人： Masahiro Kanai ,  Jinsho Matsuyama ,  Katsumi Nakagawa ,  Toshimitsu Kariya ,  Yasushi Fujioka ,  Tetsuya Takei ,  Hiroshi Echizen

发明人： Masahiro Kanai ,  Jinsho Matsuyama ,  Katsumi Nakagawa ,  Toshimitsu Kariya ,  Yasushi Fujioka ,  Tetsuya Takei ,  Hiroshi Echizen

IPC分类号： C23C16/50 ,  C23C16/54 ,  H01J37/32 ,  H01L31/076 ,  H01L31/20

CPC分类号： H01L31/076 ,  C23C16/50 ,  C23C16/545 ,  H01J37/32192 ,  H01J37/3222 ,  H01J37/3277 ,  H01L31/206 ,  H01J2237/3325 ,  Y02E10/548 ,  Y02P70/521

摘要： A method for continuously forming a large area functional deposited film by a microwave plasma CVD process, said method comprises: continuously moving a substrate web in the longitudinal direction; establishing a substantially enclosed film-forming chamber having a film-forming space by curving and projecting said moving substrate web to form a columnar portion to be the circumferential wall of said film forming chamber; introducing a film-forming raw material gas through a gas feed means into said film-forming space; at the same time, radiating or propagating microwave energy into said film-forming space by using a microwave applicator means capable of radiating or propagating said microwave energy with a directivity in one direction perpendicular to the direction of microwave propagation, to thereby generate plasma in said film-forming space, whereby continuously forming a functional deposited film on the inner face of said continuoulsy moving circumferential wall which is exposed to said plasma.

公开(公告)号：US5520740A

公开(公告)日：1996-05-28

申请号：US459485

申请日：1995-06-02

申请人： Masahiro Kanai ,  Jinsho Matsuyama ,  Katsumi Nakagawa ,  Toshimitsu Kariya ,  Yasushi Fujioka ,  Tetsuya Takei ,  Hiroshi Echizen

发明人： Masahiro Kanai ,  Jinsho Matsuyama ,  Katsumi Nakagawa ,  Toshimitsu Kariya ,  Yasushi Fujioka ,  Tetsuya Takei ,  Hiroshi Echizen

IPC分类号： C23C16/50 ,  C23C16/54 ,  H01J37/32 ,  H01L31/076 ,  H01L31/20 ,  C23C16/00

CPC分类号： H01L31/076 ,  C23C16/50 ,  C23C16/545 ,  H01J37/32192 ,  H01J37/3222 ,  H01J37/3277 ,  H01L31/206 ,  H01J2237/3325 ,  Y02E10/548 ,  Y02P70/521

摘要： A method for continuously forming a large area functional deposited film by a microwave plasma CVD process, said method comprises: continuously moving a substrate web in the longitudinal direction; establishing a substantially enclosed film-forming chamber having a film-forming space by curving and projecting said moving substrate web to form a columnar portion to be the circumferential wall of said film forming chamber on the way moving; introducing a film-forming raw material gas through a gas feed means into said film-forming space; at the same time, radiating or propagating microwave energy into said film-forming space by using a microwave applicator means capable of radiating or propagating said microwave energy with a directivity in one direction of microwave energy to propagate to generate microwave plasma in said film-forming space, whereby continuously forming a functional deposited film on the inner face of said continuously moving circumferential wall to be exposed to said microwave plasma.An apparatus suitable for practicing said method.

摘要翻译： 一种通过微波等离子体CVD工艺连续地形成大面积功能性沉积膜的方法，所述方法包括：在纵向方向上连续地移动衬底腹板; 通过弯曲和突出所述移动的基材卷材来形成具有成膜空间的基本封闭的膜形成室，以在移动的路上形成作为所述成膜室的周壁的柱状部分; 将成膜原料气体通过气体供给装置引入所述成膜空间中; 同时，通过使用能够以微波能量的一个方向上的方向性辐射或传播所述微波能量的微波施加装置将微波能量辐射或传播到所述成膜空间中以在所述成膜中产生微波等离子体 从而在所述连续移动的周壁的内表面上连续地形成功能沉积膜以暴露于所述微波等离子体。 适用于实施所述方法的装置。

公开(公告)号：US5114770A

公开(公告)日：1992-05-19

申请号：US543431

申请日：1990-06-26

申请人： Hiroshi Echizen ,  Yasushi Fujioka ,  Katsumi Nakagawa ,  Masahiro Kanai ,  Toshimitsu Kariya ,  Jinsho Matsuyama ,  Tetsuya Takei

发明人： Hiroshi Echizen ,  Yasushi Fujioka ,  Katsumi Nakagawa ,  Masahiro Kanai ,  Toshimitsu Kariya ,  Jinsho Matsuyama ,  Tetsuya Takei

IPC分类号： C23C16/50 ,  H01J37/32 ,  H01L31/20

CPC分类号： H01J37/3222 ,  C23C16/50 ,  H01J37/32192 ,  H01J37/3277 ,  H01L31/202 ,  H01L31/206 ,  H01J2237/3325 ,  Y02E10/50 ,  Y02P70/521

摘要： A method for continuously forming a functional deposited film with a large area according to a microwave plasma CVD process is described. The method comprises the steps of continuously traveling a band-shaped member containing a conductive member along its length during which a pillar-shaped film-forming space capable of being kept substantially in vacuum therein is established by the use of the traveling band-shaped member as a side wall for the film-forming space, charging starting gases for film formation through a gas feed means into the film-forming space, and simultaneously radiating a microwave through a microwave antenna in all directions vertical to the direction of movement of the microwave so that microwave power is supplied to the film-forming space to initiate a plasma in the space whereby the film is deposited on the surface of the continuously traveling band-shaped member which constitutes the side wall exposed to the plasma. An apparatus for carrying out the method is also described.

公开(公告)号：US5714010A

公开(公告)日：1998-02-03

申请号：US450620

申请日：1995-05-25

申请人： Jinsho Matsuyama ,  Toshimitsu Kariya ,  Yasushi Fujioka ,  Tetsuya Takei ,  Katsumi Nakagawa ,  Masahiro Kanai ,  Hiroshi Echizen

发明人： Jinsho Matsuyama ,  Toshimitsu Kariya ,  Yasushi Fujioka ,  Tetsuya Takei ,  Katsumi Nakagawa ,  Masahiro Kanai ,  Hiroshi Echizen

IPC分类号： C23C16/511 ,  C23C16/54 ,  H01J37/32 ,  H01L21/205 ,  H01L29/872 ,  H01L31/076 ,  H01L31/20 ,  C23C16/00

CPC分类号： H01L31/076 ,  C23C16/511 ,  C23C16/545 ,  H01J37/32192 ,  H01J37/32229 ,  H01J37/3277 ,  H01L21/02425 ,  H01L21/0245 ,  H01L21/02505 ,  H01L21/02532 ,  H01L21/0262 ,  H01L29/872 ,  H01L31/202 ,  H01L31/204 ,  H01L31/206 ,  Y02E10/548 ,  Y02P70/521

摘要： A microwave plasma CVD method for continuously forming a large area and length functional deposited film, the method comprises: continuously moving a substrate web in the longitudinal direction by paying out it by a pay-out mechanism and taking up it by a take-up mechanism; establishing a substantially enclosed film-forming chamber by curving and projecting said moving substrate web to form a columnar portion to be the circumferential wall of said film forming chamber on the way moving from said pay-out mechanism toward said take-up mechanism; introducing a film-forming raw material gas through a gas feed means into said film-forming chamber; at the same time, radiating a microwave energy in said film-forming chamber by using a microwave applicator means, which is so designed that it can radiate a microwave energy in the direction parallel to the microwave propagating direction, to generate microwave plasma in said film-forming chamber, whereby continuously forming a deposited film on the inner wall face of said continuously moving circumferential wall to be exposed to said microwave plasma. A microwave plasma CVD apparatus suitable practicing said method.

摘要翻译： 一种用于连续地形成大面积和长度的功能性沉积膜的微波等离子体CVD方法，所述方法包括：通过用放出机构支付并通过卷取机构进行卷取，从而沿纵向方向连续地移动基板 ; 通过弯曲和突出所述移动的基材卷材来形成基本上封闭的成膜室，以在从所述放出机构朝向所述卷取机构移动的路上形成作为所述成膜室的周壁的柱状部分; 将成膜原料气体通过气体供给装置引入所述成膜室中; 同时通过使用微波施加器装置在所述成膜室内辐射微波能量，所述微波施加装置设计成能够沿与微波传播方向平行的方向辐射微波能量，以在所述膜中产生微波等离子体 从而在所述连续移动的周壁的内壁面上连续地形成沉积膜以暴露于所述微波等离子体。 适用于所述方法的微波等离子体CVD装置。

公开(公告)号：US5527391A

公开(公告)日：1996-06-18

申请号：US426629

申请日：1995-04-21

申请人： Hiroshi Echizen ,  Yasushi Fujioka ,  Katsumi Nakagawa ,  Masahiro Kanai ,  Toshimitsu Kariya ,  Jinsho Matsuyama ,  Tetsuya Takei

发明人： Hiroshi Echizen ,  Yasushi Fujioka ,  Katsumi Nakagawa ,  Masahiro Kanai ,  Toshimitsu Kariya ,  Jinsho Matsuyama ,  Tetsuya Takei

IPC分类号： C23C16/50 ,  H01J37/32 ,  H01L31/20 ,  C23C16/00

CPC分类号： H01J37/3222 ,  C23C16/50 ,  H01J37/32192 ,  H01J37/3277 ,  H01L31/202 ,  H01L31/206 ,  H01J2237/3325 ,  Y02E10/50 ,  Y02P70/521

摘要： An apparatus for continuously forming a functional deposited film with a large area according to a microwave plasma CVD process is described. The apparatus comprises the elements of a continuous traveling band-shaped member containing a conductive member along its length during which a pillar-shaped film-forming space capable of being kept substantially in vacuum therein is established by the use of the traveling band-shaped member as a side wall for the film-forming space, charging starting gases for film formation through a gas feed means into the film-forming space, and simultaneously radiating a microwave through a microwave antenna in all directions vertical to the direction of movement of the microwave so that microwave power is supplied to the film-forming space to initiate a plasma in the space whereby the film is deposited on the surface of the continuously traveling band-shaped member which constitutes the side wall exposed to the plasma.

摘要翻译： 描述了根据微波等离子体CVD工艺连续地形成具有大面积的功能性沉积膜的装置。 该装置包括沿其长度包含导电构件的连续行进的带状构件的元件，在该构件中通过使用行进的带状构件来建立能够基本上保持真空的柱状成膜空间 作为成膜空间的侧壁，通过气体供给装置将用于成膜的起始气体充入成膜空间，同时通过微波天线在垂直于微波运动方向的所有方向上辐射微波 使得微波功率被供应到成膜空间以在空间中引发等离子体，由此膜沉积在构成暴露于等离子体的侧壁的连续行进的带状构件的表面上。

公开(公告)号：US5421909A

公开(公告)日：1995-06-06

申请号：US24252

申请日：1993-03-01

申请人： Nobuyuki Ishikawa ,  Keishi Saito ,  Soichiro Kawakami ,  Jinsho Matsuyama ,  Toshimitsu Kariya ,  Yuzo Kouda ,  Naoto Okada

发明人： Nobuyuki Ishikawa ,  Keishi Saito ,  Soichiro Kawakami ,  Jinsho Matsuyama ,  Toshimitsu Kariya ,  Yuzo Kouda ,  Naoto Okada

IPC分类号： H01L31/04 ,  H01L31/0216 ,  H01L31/0224 ,  H01L31/052 ,  H01L31/0232

CPC分类号： H01L31/02167 ,  H01L31/022466 ,  H01L31/0543 ,  H01L31/0547 ,  H01L31/056 ,  H01L31/0236 ,  Y02E10/52 ,  Y02E10/543

摘要： A photovoltaic device having a semiconductor layer; front and back electrodes; and a surface protection layer adjacent to the light incident side, wherein granules of a material different from that of the surface protection layer are disposed in the surface protection layer.

摘要翻译： 具有半导体层的光电器件; 前后电极; 以及与光入射侧相邻的表面保护层，其中与表面保护层的材料不同的材料颗粒设置在表面保护层中。

公开(公告)号：US5527396A

公开(公告)日：1996-06-18

申请号：US398071

申请日：1995-03-03

申请人： Keishi Saitoh ,  Tatsuyuki Aoike ,  Masafumi Sano ,  Mitsuyuki Niwa ,  Jinsho Matsuyama ,  Toshimitsu Kariya ,  Yuzou Kouda ,  Ryou Hayashi ,  Masahiko Tonogaki

发明人： Keishi Saitoh ,  Tatsuyuki Aoike ,  Masafumi Sano ,  Mitsuyuki Niwa ,  Jinsho Matsuyama ,  Toshimitsu Kariya ,  Yuzou Kouda ,  Ryou Hayashi ,  Masahiko Tonogaki

IPC分类号： C23C16/50 ,  C23C16/511 ,  C23C16/517 ,  C30B25/02 ,  C30B25/16 ,  G03G5/082 ,  H01L21/205 ,  H01L29/45 ,  H01L29/49 ,  H01L29/786 ,  H01L31/04 ,  H01L31/052 ,  H01L31/075 ,  H01L31/20 ,  C23C16/00

CPC分类号： H01L31/076 ,  C23C16/517 ,  G03G5/08264 ,  G03G5/08278 ,  H01L29/458 ,  H01L29/4908 ,  H01L29/78603 ,  H01L31/056 ,  H01L31/202 ,  H01L31/204 ,  H01L31/206 ,  Y02E10/52 ,  Y02E10/548 ,  Y02P70/521

摘要： A method of quickly depositing a non-single-crystal semiconductor film and forming a silicon-type non-single-crystal photovoltaic device, and a method of continuously manufacturing the photovoltaic devices. By this method the deposited film is formed by decomposing a raw material gas with microwave energy which is lower than the microwave energy required to completely decompose the raw material gas. RF energy is applied at the same time which is higher in energy than the microwave energy. The microwave energy acts on the raw material gas at an internal pressure level of 50 mTorr or lower to form a uniform non-single-crystal semiconductor film with excellent electrical characteristics and reduced light deterioration.

摘要翻译： 一种快速沉积非单晶半导体膜并形成硅型非单晶光伏器件的方法，以及连续制造光电器件的方法。 通过该方法，通过用低于完全分解原料气体所需的微波能量的微波能分解原料气体来形成沉积膜。 在能量上比微波能量高的同时施加RF能量。 微波能量在50mTorr以下的内部压力水平下作用于原料气体，形成均匀的非单晶半导体膜，具有优良的电气特性和降低的光劣化。

公开(公告)号：US5656098A

公开(公告)日：1997-08-12

申请号：US456403

申请日：1995-06-01

申请人： Nobuyuki Ishikawa ,  Keishi Saito ,  Soichiro Kawakami ,  Jinsho Matsuyama ,  Toshimitsu Kariya ,  Yuzo Kouda ,  Naoto Okada

发明人： Nobuyuki Ishikawa ,  Keishi Saito ,  Soichiro Kawakami ,  Jinsho Matsuyama ,  Toshimitsu Kariya ,  Yuzo Kouda ,  Naoto Okada

IPC分类号： H01L31/0216 ,  H01L31/048 ,  H01L31/052 ,  H01L31/075 ,  H01L31/04 ,  H01L31/18

CPC分类号： H01L31/073 ,  H01L31/02167 ,  H01L31/048 ,  H01L31/056 ,  H01L31/075 ,  H01L31/076 ,  Y02E10/52 ,  Y02E10/543 ,  Y02E10/548

摘要： A photovoltaic device has a semiconductor layer; electrodes and a surface protection layer adjacent to the light incident side. Granules of a material different from those of the surface protection layer are disposed in the surface protection layer. The granules in the surface protection layer have an average grain size of 0.001-20 microns, a surface density S from 0.2 to 0.9 and/or a density per volume from 0.001 to 0.5.To produce a surface protecting layer for a photovoltaic device in which the surface protecting layer has granules at a light incident side the surface of a photovoltaic device is painted with a liquid resin containing the granules.

摘要翻译： 光电器件具有半导体层; 电极和与光入射侧相邻的表面保护层。 与表面保护层不同的材料颗粒设置在表面保护层中。 表面保护层中的颗粒的平均粒度为0.001-20微米，表面密度S为0.2至0.9，和/或每体积密度为0.001至0.5。 为了制造其中表面保护层在光入射侧具有颗粒的光伏器件的表面保护层，光伏器件的表面被涂有含有颗粒的液体树脂。

公开(公告)号：US5439533A

公开(公告)日：1995-08-08

申请号：US337195

申请日：1994-11-07

申请人： Keishi Saito ,  Jinsho Matsuyama ,  Toshimitsu Kariya ,  Koichi Matsuda ,  Yuzo Koda ,  Naoto Okada

发明人： Keishi Saito ,  Jinsho Matsuyama ,  Toshimitsu Kariya ,  Koichi Matsuda ,  Yuzo Koda ,  Naoto Okada

IPC分类号： H01L31/04 ,  H01L31/0392 ,  H01L31/075 ,  H01L31/076 ,  H01L31/20 ,  H01L31/18

CPC分类号： H01L31/03921 ,  H01L31/075 ,  H01L31/076 ,  H01L31/202 ,  H01L31/204 ,  Y02E10/548 ,  Y02P70/521 ,  Y10S136/293

摘要： An object of the present invention is to provide a photovoltaic device and a method of producing the photovoltaic device which can prevent recombination of photo-excited carriers and which permits increases in the open circuit voltage and the carrier range. The photovoltaic device of the present invention has a laminate structure composed of at least a p-type layer of a silicon non-single crystal semiconductor, a photoactive layer having a plurality of i-type layers, and an n-type layer. The photoactive layer has a laminate structure composed of a first i-type layer deposited on the side of the n-type layer by a microwave plasma CVD process, and a second i-type layer deposited on the side of said the p-type layer by an RF plasma CVD process. The first i-type layer deposited by the microwave plasma CVD process contains at least silicon and carbon atoms, and has a minimum band gap between the center thereof and the p-type layer, and the second i-type layer deposited by the RF plasma CVD process contains at least silicon atoms and has a thickness of 30 nm or less.

摘要翻译： 本发明的目的是提供一种能够防止光激发载流子复合并且允许开路电压和载流子范围增加的光电器件及其制造方法。 本发明的光电器件具有至少由非硅单晶半导体的p型层，具有多个i型层的光活性层和n型层构成的层叠结构。 光敏层具有由微波等离子体CVD工艺在n型层侧沉积的第一i型层和沉积在所述p型层侧的第二i型层构成的层叠结构 通过RF等离子体CVD工艺。 通过微波等离子体CVD法沉积的第一i型层至少包含硅和碳原子，并且在其中心和p型层之间具有最小的带隙，并且由RF等离子体沉积的第二i型层 CVD工艺至少含有硅原子，其厚度为30nm以下。