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    ELECTROSTATIC CHUCK AND BASE FOR PLASMA REACTOR HAVING IMPROVED WAFER ETCH RATE
    1.
    发明申请
    ELECTROSTATIC CHUCK AND BASE FOR PLASMA REACTOR HAVING IMPROVED WAFER ETCH RATE 审中-公开
    具有改进的水分蚀刻速率的等离子体反应器的静电切块和基体

    公开(公告)号：US20100271745A1

    公开(公告)日：2010-10-28

    申请号：US12502988

    申请日：2009-07-14

    申请人： Jinyuan CHEN ,  Liang Ouyang ,  Junichi Arami ,  Xueyu Qian ,  Zhiyou Du ,  Gerald Yin

    发明人： Jinyuan CHEN ,  Liang Ouyang ,  Junichi Arami ,  Xueyu Qian ,  Zhiyou Du ,  Gerald Yin

    IPC分类号： H01L21/683 ,  C23F1/08 ,  H05K13/00

    CPC分类号： H01L21/6831 ,  Y10T29/49117

    摘要： An electrostatic chuck device in which the electrostatic chuck and support are made from high resistivity, high thermal conductivity and low RF energy loss dielectric materials is described. An advantage of this electrostatic chuck device is that the wafer surface electromagnetic field distribution is more uniform than conventional electrostatic chuck devices. As a result, the wafer etch rate, especially the wafer edge etch rate non-uniformity, is significantly improved compared with conventional electrostatic chuck devices.

    摘要翻译： 描述了一种静电吸盘装置，其中静电卡盘和支撑件由高电阻率，高热导率和低RF能量损耗介电材料制成。 这种静电卡盘装置的优点是晶片表面的电磁场分布比传统的静电卡盘装置更均匀。 结果，与传统的静电卡盘装置相比，晶片蚀刻速率，特别是晶片边缘蚀刻速率不均匀性显着提高。

    PLASMA CHAMBER HAVING SWITCHABLE BIAS POWER AND A SWITCHABLE FREQUENCY RF MATCH NETWORK THEREFOR
    2.
    发明申请
    PLASMA CHAMBER HAVING SWITCHABLE BIAS POWER AND A SWITCHABLE FREQUENCY RF MATCH NETWORK THEREFOR 审中-公开
    具有可切换偏置电源的等离子体室和可切换的频率RF匹配网络

    公开(公告)号：US20110030900A1

    公开(公告)日：2011-02-10

    申请号：US12851381

    申请日：2010-08-05

    申请人： Jinyuan CHEN ,  Gerald Yin

    发明人： Jinyuan CHEN ,  Gerald Yin

    IPC分类号： C23F1/08 ,  H03K17/00

    CPC分类号： H01J37/32174 ,  H01J37/32091 ,  H01J37/32165 ,  Y10T307/74

    摘要： A plasma chamber having a switchable bias frequency superimposed onto plasma source frequency and applied to the cathode. A power supplier capable of generating multiple RF bias frequencies is coupled into a match network through a switch. The match network couples one of the bias frequencies to the cathode. Another match network applied a source RF power to the cathode. One parallel connection of variable shunt capacitor and fixed capacitor are provided between ground and input of the switch and another is connected between ground and the input of the source RF match network.

    摘要翻译： 等离子体室，其具有叠加在等离子体源频率上的可切换偏置频率并施加到阴极。 能够产生多个RF偏置频率的电源通过开关耦合到匹配网络中。 匹配网络将偏置频率中的一个耦合到阴极。 另一个匹配网络将源RF功率施加到阴极。 可变并联电容器和固定电容器的并联连接在开关的地和输入端之间提供，另一个连接在地与源射频匹配网络的输入端之间。