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    SURFACE MORPHOLOGY GENERATION AND TRANSFER BY SPALLING
    5.
    发明申请
    SURFACE MORPHOLOGY GENERATION AND TRANSFER BY SPALLING 审中-公开
    表面形态生成和转移

    公开(公告)号：US20130316538A1

    公开(公告)日：2013-11-28

    申请号：US13478749

    申请日：2012-05-23

    申请人： Stephen W. Bedell ,  Keith E. Fogel ,  Augustin J. Hong ,  Ning Li ,  Devendra K. Sadana ,  Katherine L. Saenger ,  Davood Shahrjerdi ,  Kuen-Ting Shiu

    发明人： Stephen W. Bedell ,  Keith E. Fogel ,  Augustin J. Hong ,  Ning Li ,  Devendra K. Sadana ,  Katherine L. Saenger ,  Davood Shahrjerdi ,  Kuen-Ting Shiu

    IPC分类号： H01L21/304 ,  H01L21/306

    CPC分类号： H01L21/304 ,  H01L31/02363 ,  Y02E10/50

    摘要： The generation of surface patterns or the replication of surface patterns is achieved in the present disclosure without the need to employ an etching process. Instead, a unique fracture mode referred to as spalling is used in the present disclosure to generate or replicate surface patterns. In the case of surface pattern generation, a surface pattern is provided in a stressor layer and then spalling is performed. In the case of surface pattern replication, a surface pattern is formed within or on a surface of a base substrate, and then a stressor layer is applied. After applying the stressor layer, spalling is performed. Generation or replication of surface patterns utilizing spalling provides a low cost means for generation or replication of surface patterns.

    摘要翻译： 在本公开中实现表面图案的产生或表面图案的复制，而不需要采用蚀刻工艺。 相反，在本公开中使用称为剥落的独特的断裂模式来生成或复制表面图案。 在表面图案生成的情况下，在应力层中设置表面图案，然后进行剥离。 在表面图案复制的情况下，在基底表面上或表面上形成表面图案，然后施加应力层。 施加应力层后，进行剥落。 利用剥落产生或复制表面图案为生成或复制表面图案提供了低成本的手段。

    Photoreceptor with improved blocking layer
    7.
    发明授权
    Photoreceptor with improved blocking layer 有权
    光感受器具有改进的阻挡层

    公开(公告)号：US09123842B2

    公开(公告)日：2015-09-01

    申请号：US13554886

    申请日：2012-07-20

    申请人： Bahman Hekmatshoartabari ,  Jeehwan Kim ,  Devendra K. Sadana ,  Ghavam G. Shahidi ,  Davood Shahrjerdi

    发明人： Bahman Hekmatshoartabari ,  Jeehwan Kim ,  Devendra K. Sadana ,  Ghavam G. Shahidi ,  Davood Shahrjerdi

    IPC分类号： H01L21/00 ,  H01L31/0352 ,  H01L31/103 ,  B82Y20/00

    CPC分类号： H01L31/035236 ,  B82Y20/00 ,  H01L31/1037

    摘要： A photoreceptor includes a multilayer blocking structure to reduce dark discharge of the surface voltage of the photoreceptor resulting from electron injection from an electrically conductive substrate. The multilayer blocking structure includes wide band gap semiconductor layers in alternating sequence with one or more narrow band gap blocking layers. A fabrication method of the photoreceptor includes transfer-doping of the narrow band gap blocking layers, which are deposited in alternating sequence with wide band gap semiconductor layers to form a blocking structure. Suppression of hole or electron injection can be obtained using the method.

    摘要翻译： 感光体包括多层阻挡结构，以减少由导电基底电子注入的感光体的表面电压的暗放电。 多层阻挡结构包括与一个或多个窄带隙阻挡层交替顺序的宽带隙半导体层。 感光体的制造方法包括：以宽带隙半导体层交替排列形成阻挡结构的窄带隙阻挡层的转移掺杂。 使用该方法可以获得空穴或电子注入的抑制。

    PHOTORECEPTOR WITH IMPROVED BLOCKING LAYER
    8.
    发明申请
    PHOTORECEPTOR WITH IMPROVED BLOCKING LAYER 审中-公开
    具有改进阻塞层的光电元件

    公开(公告)号：US20130341623A1

    公开(公告)日：2013-12-26

    申请号：US13527961

    申请日：2012-06-20

    申请人： Bahman Hekmatshoartabari ,  Jeehwan Kim ,  Devendra K. Sadana ,  Ghavam G. Shahidi ,  Davood Shahrjerdi

    发明人： Bahman Hekmatshoartabari ,  Jeehwan Kim ,  Devendra K. Sadana ,  Ghavam G. Shahidi ,  Davood Shahrjerdi

    IPC分类号： H01L31/02

    CPC分类号： H01L31/035236 ,  B82Y20/00 ,  H01L31/1037

    摘要： A photoreceptor includes a multilayer blocking structure to reduce dark discharge of the surface voltage of the photoreceptor resulting from electron injection from an electrically conductive substrate. The multilayer blocking structure includes wide band gap semiconductor layers in alternating sequence with one or more narrow band gap blocking layers. A fabrication method of the photoreceptor includes transfer-doping of the narrow band gap blocking layers, which are deposited in alternating sequence with wide band gap semiconductor layers to form a blocking structure. Suppression of hole or electron injection can be obtained using the method.

    摘要翻译： 感光体包括多层阻挡结构，以减少由导电基底电子注入的感光体的表面电压的暗放电。 多层阻挡结构包括与一个或多个窄带隙阻挡层交替顺序的宽带隙半导体层。 感光体的制造方法包括：以宽带隙半导体层交替排列形成阻挡结构的窄带隙阻挡层的转移掺杂。 使用该方法可以获得空穴或电子注入的抑制。

    Fin Structures with Damage-Free Sidewalls for Multi-Gate Mosfets
    10.
    发明申请
    Fin Structures with Damage-Free Sidewalls for Multi-Gate Mosfets 审中-公开
    具有无门侧壁的翅片结构，用于多栅极Mosfets

    公开(公告)号：US20130196488A1

    公开(公告)日：2013-08-01

    申请号：US13605085

    申请日：2012-09-06

    申请人： Bahman Hekmatshoartabari ,  Devendra K. Sadana ,  Ghavam G. Shahidi ,  Davood Shahrjerdi

    发明人： Bahman Hekmatshoartabari ,  Devendra K. Sadana ,  Ghavam G. Shahidi ,  Davood Shahrjerdi

    IPC分类号： H01L21/20

    CPC分类号： H01L29/785 ,  H01L21/02389 ,  H01L21/0254 ,  H01L21/02639 ,  H01L29/66795

    摘要： Improved Fin Field Effect Transistors (FinFET) are provided, as well as improved techniques for forming fins for a FinFET. A fin for a FinFET is formed by forming a semi-insulating layer on an insulator that gives a sufficiently large conduction band offset (ΔEc) ranging from 0.05-0.6 eV; patterning an epitaxy mask on the semi-insulating layer, wherein the epitaxy mask has a reverse image of a desired pattern of the fin; performing a selective epitaxial growth within the epitaxy mask; and removing the epitaxy mask such that the fin remains on the semi-insulating layer. The semi-insulating layer comprises, for example, a III-V semiconductor material and optionally further comprises a Si δ-doping layer to supply electron carriers to the III-V channel.

    摘要翻译： 提供了改进的鳍场效应晶体管（FinFET），以及用于形成FinFET鳍片的改进技术。 通过在绝缘体上形成半绝缘层，形成范围从0.05-0.6eV的足够大的导带偏移（DeltaEc）形成FinFET鳍; 在所述半绝缘层上构图外延掩模，其中所述外延掩模具有鳍的期望图案的反向图像; 在外延掩模内进行选择性外延生长; 并移除外延掩模，使得翅片保留在半绝缘层上。 半绝缘层包括例如III-V族半导体材料，并且任选地还包括用于向III-V沟道提供电子载流子的Si-δ掺杂层。