摘要:
The cracking experienced during thermal cycling of metal:dielectric semiconductor packages results from a mismatch in thermal co-efficients of expansion. The non-hermeticity associated with such cracking can be addressed by backfilling the permeable cracks with a flexible material. Uniform gaps between the metal and dielectric materials can similarly be filled with flexible materials to provide stress relief, bulk compressibility and strength to the package. Furthermore, a permeable, skeletal dielectric can be fabricated as a fired, multilayer structure having sintered metallurgy and subsequently infused with a flexible, temperature-stable material to provide hermeticity and strength.
摘要:
The cracking experienced during thermal cycling of metal:dielectric semiconductor packages results from a mismatch in thermal co-efficients of expansion. The non-hermeticity associated with such cracking can be addresssed by backfilling the permeable cracks with a flexible material. Uniform gaps between the metal and dielectric materials can similarly be filled with flexible materials to provide stress relief, bulk compressibility and strength to the package. Furthermore, a permeable, skeletal dielectric can be fabricated as a fired, multilayer structure having sintered metallurgy and subsequently infused with a flexible, temperature-stable material to provide hermeticity and strength.
摘要:
The cracking experienced during thermal cycling of metal:dielectric semiconductor packages results from a mismatch in thermal co-efficients of expansion. The non-hermeticity associated with such cracking can be addressed by backfilling the permeable cracks with a flexible material. Uniform gaps between the metal and dielectric materials can similarly be filled with flexible materials to provide stress relief, bulk compressibility and strength to the package. Furthermore, a permeable, skeletal dielectric can be fabricated as a fired, multilayer structure having sintered metallurgy and subsequently infused with a flexible, temperature-stable material to provide hermeticity and strength.
摘要:
A method of forming an adherent layer of metallurgy on a ceramic substrate which includes the steps of obtaining a ceramic material containing a polymeric binder and copper metallurgy patterns within the ceramic body. In one embodiment of the invention, the ceramic body also contains MgO.Thereafter, a surface layer of metallurgy is formed on the surface of the ceramic body. In one embodiment, the surface layer is nickel and in another embodiment, the surface layer is copper or gold.Then, the ceramic body undergoes a sintering cycle which includes the steps of pyrolysis, binder burnoff and, lastly, densification and, in some cases, crystallization. During densification and crystallization, there is a predetermined steam atmosphere which meets the following requirements: a partial pressure of oxygen less than that necessary to satisfy the equilibrium equation 4Cu+O.sub.2 =2Cu.sub.2 O; and a partial pressure of oxygen less than or equal to that necessary to satisfy the equilibrium equation 2Ni+O.sub.2 =2NiO for nickel in said surface metallurgy.
摘要:
A large ceramic substrate article for electronic applications including at least one layer of sintered ceramic material, the layer including a plurality of greensheet segments of ceramic material joined edge to edge. Also disclosed is a method of fabricating a large ceramic greensheet article as well as a large ceramic substrate article.
摘要:
A method is provided for the making of interconnect solder bumps on a wafer or other electronic device. The method is particularly useful for the well-known C4NP interconnect technology and determines if any off-set resulted between the solder mold array and the wafer capture array during the transfer process. The amount of off-set enables the operator to adjust the transfer tool before solder transfer to compensate for the off-set caused by the transfer process and provides a more cost-effective and efficient solder transfer process. A solder reactive material surrounding the capture pads is used to determine where the solder reacts with the solder reactive material showing the off-set resulting from the transfer process. Copper is a preferred solder reactive material.
摘要:
There is disclosed a sintering arrangement for enhancing the removal of carbon from multilayer ceramic substrate laminate during the sintering thereof. A multilayer ceramic substrate laminate having metallic lines and vias is provided with a reducible metal oxide in close proximity to the substrate laminate. The multilayer ceramic substrate laminate contains a polymeric binder which upon heating depolymerizes into carbon. The substrate laminate is sintered in an atmosphere which is reducing with respect to the reducible metal oxide and which is oxidizing with respect to the carbon.
摘要:
There is disclosed the enhancement of the removal of carbon from multilayer ceramic substrate laminate during the sintering thereof. A multilayer ceramic substrate laminate having metallic lines and vias is provided with a reducible metal oxide in close proximity to the substrate laminate. The multilayer ceramic substrate laminate contains a polymeric binder which upon heating depolymerizes into carbon. The substrate laminate is sintered in an atmosphere which is reducing with respect to the reducible metal oxide and which is oxidizing with respect to the carbon.
摘要:
There is disclosed a partially sintered setter tile for use in the removal of carbon from multilayer ceramic substrate laminate during the sintering thereof. A multilayer ceramic substrate laminate having metallic lines and vias is provided with a reducible metal oxide in a partially sintered setter tile in close proximity to the substrate laminate. The multilayer ceramic substrate laminate contains a polymeric binder which upon heating depolymerizes into carbon. The substrate laminate and partially sintered setter tile are sintered in an atmosphere which is reducing with respect to the reducible metal oxide and which is oxidizing with respect to the carbon.
摘要:
A ceramic material suitable for packaging of large scale integrated circuits is produced by the process of forming a mixture of a powdered glass ceramic material which is a glassy precursor to cordierite ceramic material, formed by the steps which are as follows:a. Mix tetragonal phase material selected from the group consisting of zirconia of hafnia powder containing a stabilizing oxide compound selected from the group consisting of MgO, CaO and Y.sub.2 O.sub.3 and a glass frit powder or frit of a glassy precursor of cordierite glass ceramic to yield a suspension of solids. Preferably, a binder is included.b. Disperse the suspended solids to yield a dispersion of the zirconia or hafnia with the stabilizing oxide compound and the glassy precursor.c. Densify the dispersion of zirconia or hafnia with the stabilizing oxide compound and the glassy precursor by a sintering heat treatment at a temperature of about 840.degree. C. to melt the glassy precursor into a viscous fluid at a temperature below the melting point of the zirconia or hafnia powder particles to yield a densified intermediate material with the zirconia or hafnia particles encapsulated in the molden glassy precursor.d. Crystallize the densified intermediate material into a polycrystalline composite by heating at 900.degree. C. to 950.degree. C.The process yields a ceramic material consisting of the tetragonal phase material encapsulated in crystalline cordierite glass ceramic material.