公开(公告)号：US20090075472A1

公开(公告)日：2009-03-19

申请号：US11857760

申请日：2007-09-19

申请人： John C. Arnold ,  Griselda Bonilla ,  William J. Cote ,  Geraud Dubois ,  Daniel C. Edelstein ,  Alfred Grill ,  Elbert Huang ,  Robert D. Miller ,  Satya V. Nitta ,  Sampath Purushothaman ,  E. Todd Ryan ,  Muthumanickam Sankarapandian ,  Terry A. Spooner ,  Willi Volksen

发明人： John C. Arnold ,  Griselda Bonilla ,  William J. Cote ,  Geraud Dubois ,  Daniel C. Edelstein ,  Alfred Grill ,  Elbert Huang ,  Robert D. Miller ,  Satya V. Nitta ,  Sampath Purushothaman ,  E. Todd Ryan ,  Muthumanickam Sankarapandian ,  Terry A. Spooner ,  Willi Volksen

IPC分类号： H01L21/4763

CPC分类号： H01L21/76808 ,  H01L21/02063 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/02348 ,  H01L21/02362 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/31633 ,  H01L21/76814 ,  H01L21/76826 ,  H01L21/76831

摘要： Methods of minimizing or eliminating plasma damage to low k and ultra low k organosilicate intermetal dielectric layers are provided. The reduction of the plasma damage is effected by interrupting the etch and strip process flow at a suitable point to add an inventive treatment which protects the intermetal dielectric layer from plasma damage during the plasma strip process. Reduction or elimination of a plasma damaged region in this manner also enables reduction of the line bias between a line pattern in a photoresist and a metal line formed therefrom, and changes in the line width of the line trench due to a wet clean after the reactive ion etch employed for formation of the line trench and a via cavity. The reduced line bias has a beneficial effect on electrical yields of a metal interconnect structure.

摘要翻译： 提供了最小化或消除对低k和超低k有机硅酸盐金属间电介质层的等离子体损伤的方法。 等离子体损伤的降低通过在合适的点处中断蚀刻和剥离工艺流程来实现，以增加本发明的处理，其保护金属间电介质层免受等离子体条带处理期间的等离子体损伤。 以这种方式减少或消除等离子体损伤区域还能够减少光致抗蚀剂中的线图案和由其形成的金属线之间的线偏压，并且由于在反应性之后的湿清洁而改变线沟槽的线宽 用于形成线沟槽和通孔腔的离子蚀刻。 减少的线偏压对金属互连结构的电产量具有有益的影响。

公开(公告)号：US20120329269A1

公开(公告)日：2012-12-27

申请号：US13602119

申请日：2012-09-01

申请人： John C. Arnold ,  Griselda Bonilla ,  William J. Cote ,  Geraud Dubois ,  Daniel C. Edelstein ,  Alfred Grill ,  Elbert Huang ,  Robert D. Miller ,  Satya V. Nitta ,  Sampath Purushothaman ,  E. Todd Ryan ,  Muthumanickam Sankarapandian ,  Terry A. Spooner ,  Willi Volksen

发明人： John C. Arnold ,  Griselda Bonilla ,  William J. Cote ,  Geraud Dubois ,  Daniel C. Edelstein ,  Alfred Grill ,  Elbert Huang ,  Robert D. Miller ,  Satya V. Nitta ,  Sampath Purushothaman ,  E. Todd Ryan ,  Muthumanickam Sankarapandian ,  Terry A. Spooner ,  Willi Volksen

IPC分类号： H01L21/768

CPC分类号： H01L21/76808 ,  H01L21/02063 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/02348 ,  H01L21/02362 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/31633 ,  H01L21/76814 ,  H01L21/76826 ,  H01L21/76831

摘要： Methods of minimizing or eliminating plasma damage to low k and ultra low k organosilicate intermetal dielectric layers are provided. The reduction of the plasma damage is effected by interrupting the etch and strip process flow at a suitable point to add an inventive treatment which protects the intermetal dielectric layer from plasma damage during the plasma strip process. Reduction or elimination of a plasma damaged region in this manner also enables reduction of the line bias between a line pattern in a photoresist and a metal line formed therefrom, and changes in the line width of the line trench due to a wet clean after the reactive ion etch employed for formation of the line trench and a via cavity. The reduced line bias has a beneficial effect on electrical yields of a metal interconnect structure.

摘要翻译： 提供了最小化或消除对低k和超低k有机硅酸盐金属间电介质层的等离子体损伤的方法。 等离子体损伤的降低通过在合适的点处中断蚀刻和剥离工艺流程来实现，以增加本发明的处理，其保护金属间电介质层免受等离子体条带处理期间的等离子体损伤。 以这种方式减少或消除等离子体损伤区域还能够减少光致抗蚀剂中的线图案和由其形成的金属线之间的线偏压，并且由于在反应性之后的湿清洁而改变线沟槽的线宽 用于形成线沟槽和通孔腔的离子蚀刻。 减少的线偏压对金属互连结构的电产量具有有益的影响。

公开(公告)号：US08481423B2

公开(公告)日：2013-07-09

申请号：US11857760

申请日：2007-09-19

申请人： John C. Arnold ,  Griselda Bonilla ,  William J. Cote ,  Geraud Dubois ,  Daniel C. Edelstein ,  Alfred Grill ,  Elbert Huang ,  Robert D. Miller ,  Satya V. Nitta ,  Sampath Purushothaman ,  E. Todd Ryan ,  Muthumanickam Sankarapandian ,  Terry A. Spooner ,  Willi Volksen

发明人： John C. Arnold ,  Griselda Bonilla ,  William J. Cote ,  Geraud Dubois ,  Daniel C. Edelstein ,  Alfred Grill ,  Elbert Huang ,  Robert D. Miller ,  Satya V. Nitta ,  Sampath Purushothaman ,  E. Todd Ryan ,  Muthumanickam Sankarapandian ,  Terry A. Spooner ,  Willi Volksen

IPC分类号： H01L21/4763

CPC分类号： H01L21/76808 ,  H01L21/02063 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/02348 ,  H01L21/02362 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/31633 ,  H01L21/76814 ,  H01L21/76826 ,  H01L21/76831

摘要： Methods of minimizing or eliminating plasma damage to low k and ultra low k organosilicate intermetal dielectric layers are provided. The reduction of the plasma damage is effected by interrupting the etch and strip process flow at a suitable point to add an inventive treatment which protects the intermetal dielectric layer from plasma damage during the plasma strip process. Reduction or elimination of a plasma damaged region in this manner also enables reduction of the line bias between a line pattern in a photoresist and a metal line formed therefrom, and changes in the line width of the line trench due to a wet clean after the reactive ion etch employed for formation of the line trench and a via cavity. The reduced line bias has a beneficial effect on electrical yields of a metal interconnect structure.

公开(公告)号：US08470706B2

公开(公告)日：2013-06-25

申请号：US13602119

申请日：2012-09-01

申请人： John C. Arnold ,  Griselda Bonilla ,  William J. Cote ,  Geraud Dubois ,  Daniel C. Edelstein ,  Alfred Grill ,  Elbert Huang ,  Robert D. Miller ,  Satya V. Nitta ,  Sampath Purushothaman ,  E. Todd Ryan ,  Muthumanickam Sankarapandian ,  Terry A. Spooner ,  Willi Volksen

发明人： John C. Arnold ,  Griselda Bonilla ,  William J. Cote ,  Geraud Dubois ,  Daniel C. Edelstein ,  Alfred Grill ,  Elbert Huang ,  Robert D. Miller ,  Satya V. Nitta ,  Sampath Purushothaman ,  E. Todd Ryan ,  Muthumanickam Sankarapandian ,  Terry A. Spooner ,  Willi Volksen

IPC分类号： H01L21/4763

CPC分类号： H01L21/76808 ,  H01L21/02063 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/02348 ,  H01L21/02362 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/31633 ,  H01L21/76814 ,  H01L21/76826 ,  H01L21/76831

摘要： Methods of minimizing or eliminating plasma damage to low k and ultra low k organosilicate intermetal dielectric layers are provided. The reduction of the plasma damage is effected by interrupting the etch and strip process flow at a suitable point to add an inventive treatment which protects the intermetal dielectric layer from plasma damage during the plasma strip process. Reduction or elimination of a plasma damaged region in this manner also enables reduction of the line bias between a line pattern in a photoresist and a metal line formed therefrom, and changes in the line width of the line trench due to a wet clean after the reactive ion etch employed for formation of the line trench and a via cavity. The reduced line bias has a beneficial effect on electrical yields of a metal interconnect structure.

摘要翻译： 提供了最小化或消除对低k和超低k有机硅酸盐金属间电介质层的等离子体损伤的方法。 等离子体损伤的降低通过在合适的点处中断蚀刻和剥离工艺流程来实现，以增加本发明的处理，其保护金属间电介质层免受等离子体条带处理期间的等离子体损伤。 以这种方式减少或消除等离子体损伤区域还能够减少光致抗蚀剂中的线图案和由其形成的金属线之间的线偏压，并且由于在反应性之后的湿清洁而改变线沟槽的线宽 用于形成线沟槽和通孔腔的离子蚀刻。 减少的线偏压对金属互连结构的电产量具有有益的影响。

公开(公告)号：US20090072401A1

公开(公告)日：2009-03-19

申请号：US11857805

申请日：2007-09-19

申请人： John C. Arnold ,  Sampath Purushothaman ,  Muthumanickam Sankarapandian ,  Hosadurga K. Shobha ,  Terry A. Spooner

发明人： John C. Arnold ,  Sampath Purushothaman ,  Muthumanickam Sankarapandian ,  Hosadurga K. Shobha ,  Terry A. Spooner

IPC分类号： H01L23/52 ,  H01L21/4763

CPC分类号： H01L23/5329 ,  H01L21/76808 ,  H01L21/76814 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76831 ,  H01L2924/0002 ,  H01L2924/00

摘要： Plasma damage in ultra low k dielectric materials during formation of a dual damascene metal interconnect structure is reduced by providing a protective spacer on sidewalls of a line trench. A densified trench bottom region may be additionally formed directly beneath an exposed horizontal surface of the line trench. The protective spacer and/or the densified trench bottom region protects an ultra low k intermetal dielectric layer from plasma damage during a plasma strip process that is used to remove a disposable via fill plug employed in the dual damascene metal interconnect structure.

摘要翻译： 在形成双镶嵌金属互连结构的超低k电介质材料中的等离子体损伤通过在管线沟槽的侧壁上设置保护隔离物来减少。 致密沟槽底部区域可以直接附加地形成在线沟槽的暴露的水平表面下方。 保护间隔物和/或致密的沟槽底部区域在用于去除在双镶嵌金属互连结构中使用的一次性通孔填充塞的等离子体条带过程中保护超低k金属间介电层免受等离子体损伤。

公开(公告)号：US20100320617A1

公开(公告)日：2010-12-23

申请号：US12853354

申请日：2010-08-10

申请人： John C. Arnold ,  Sampath Purushothaman ,  Muthumanickam Sankarapandian ,  Hosadurga K. Shobha ,  Terry A. Spooner

发明人： John C. Arnold ,  Sampath Purushothaman ,  Muthumanickam Sankarapandian ,  Hosadurga K. Shobha ,  Terry A. Spooner

IPC分类号： H01L23/48

CPC分类号： H01L23/5329 ,  H01L21/76808 ,  H01L21/76814 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76831 ,  H01L2924/0002 ,  H01L2924/00

摘要： Plasma damage in ultra low k dielectric materials during formation of a dual damascene metal interconnect structure is reduced by providing a protective spacer on sidewalls of a line trench. A densified trench bottom region may be additionally formed directly beneath an exposed horizontal surface of the line trench. The protective spacer and/or the densified trench bottom region protects an ultra low k intermetal dielectric layer from plasma damage during a plasma strip process that is used to remove a disposable via fill plug employed in the dual damascene metal interconnect structure.

摘要翻译： 在形成双镶嵌金属互连结构的超低k电介质材料中的等离子体损伤通过在管线沟槽的侧壁上设置保护隔离物来减少。 致密沟槽底部区域可以直接附加地形成在线沟槽的暴露的水平表面下方。 保护间隔物和/或致密的沟槽底部区域在用于去除在双镶嵌金属互连结构中使用的一次性通孔填充塞的等离子体条带过程中保护超低k金属间介电层免受等离子体损伤。

公开(公告)号：US07781332B2

公开(公告)日：2010-08-24

申请号：US11857805

申请日：2007-09-19

申请人： John C. Arnold ,  Sampath Purushothaman ,  Muthumanickam Sankarapandian ,  Hosadurga K. Shobha ,  Terry A. Spooner

发明人： John C. Arnold ,  Sampath Purushothaman ,  Muthumanickam Sankarapandian ,  Hosadurga K. Shobha ,  Terry A. Spooner

IPC分类号： H01L21/4763 ,  H01L21/302

CPC分类号： H01L23/5329 ,  H01L21/76808 ,  H01L21/76814 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76831 ,  H01L2924/0002 ,  H01L2924/00

摘要： Plasma damage in ultra low k dielectric materials during formation of a dual damascene metal interconnect structure is reduced by providing a protective spacer on sidewalls of a line trench. A densified trench bottom region may be additionally formed directly beneath an exposed horizontal surface of the line trench. The protective spacer and/or the densified trench bottom region protects an ultra low k intermetal dielectric layer from plasma damage during a plasma strip process that is used to remove a disposable via fill plug employed in the dual damascene metal interconnect structure.

摘要翻译： 在形成双镶嵌金属互连结构的超低k电介质材料中的等离子体损伤通过在管线沟槽的侧壁上设置保护隔离物来减少。 致密沟槽底部区域可以直接附加地形成在线沟槽的暴露的水平表面下方。 保护间隔物和/或致密的沟槽底部区域在用于去除在双镶嵌金属互连结构中使用的一次性通孔填充塞的等离子体条带过程中保护超低k金属间介电层免受等离子体损伤。

公开(公告)号：US08129843B2

公开(公告)日：2012-03-06

申请号：US12853354

申请日：2010-08-10

申请人： John C. Arnold ,  Sampath Purushothaman ,  Muthumanickam Sankarapandian ,  Hosadurga K. Shobha ,  Terry A. Spooner

发明人： John C. Arnold ,  Sampath Purushothaman ,  Muthumanickam Sankarapandian ,  Hosadurga K. Shobha ,  Terry A. Spooner

IPC分类号： H01L23/48 ,  H01L23/52

CPC分类号： H01L23/5329 ,  H01L21/76808 ,  H01L21/76814 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76831 ,  H01L2924/0002 ,  H01L2924/00

摘要： Plasma damage in ultra low k dielectric materials during formation of a dual damascene metal interconnect structure is reduced by providing a protective spacer on sidewalls of a line trench. A densified trench bottom region may be additionally formed directly beneath an exposed horizontal surface of the line trench. The protective spacer and/or the densified trench bottom region protects an ultra low k intermetal dielectric layer from plasma damage during a plasma strip process that is used to remove a disposable via fill plug employed in the dual damascene metal interconnect structure.

摘要翻译： 在形成双镶嵌金属互连结构的超低k电介质材料中的等离子体损伤通过在管线沟槽的侧壁上设置保护隔离物来减少。 致密沟槽底部区域可以直接附加地形成在线沟槽的暴露的水平表面下方。 保护间隔物和/或致密的沟槽底部区域在用于去除在双镶嵌金属互连结构中使用的一次性通孔填充塞的等离子体条带过程中保护超低k金属间介电层免受等离子体损伤。

公开(公告)号：US08916337B2

公开(公告)日：2014-12-23

申请号：US13402068

申请日：2012-02-22

申请人： John C. Arnold ,  Sean D. Burns ,  Steven J. Holmes ,  David V. Horak ,  Muthumanickam Sankarapandian ,  Yunpeng Yin

发明人： John C. Arnold ,  Sean D. Burns ,  Steven J. Holmes ,  David V. Horak ,  Muthumanickam Sankarapandian ,  Yunpeng Yin

IPC分类号： G03F7/26

CPC分类号： H01L23/5226 ,  G03F7/0035 ,  G03F7/091 ,  G03F7/094 ,  H01L21/0332 ,  H01L21/0338 ,  H01L21/3081 ,  H01L21/3088 ,  H01L21/31144 ,  H01L21/76811 ,  H01L21/76816 ,  H01L2924/0002 ,  Y10T428/24355 ,  H01L2924/00

摘要： A first metallic hard mask layer over an interconnect-level dielectric layer is patterned with a line pattern. At least one dielectric material layer, a second metallic hard mask layer, a first organic planarization layer (OPL), and a first photoresist are applied above the first metallic hard mask layer. A first via pattern is transferred from the first photoresist layer into the second metallic hard mask layer. A second OPL and a second photoresist are applied and patterned with a second via pattern, which is transferred into the second metallic hard mask layer. A first composite pattern of the first and second via patterns is transferred into the at least one dielectric material layer. A second composite pattern that limits the first composite pattern with the areas of the openings in the first metallic hard mask layer is transferred into the interconnect-level dielectric layer.

摘要翻译： 在互连级介质层上的第一金属硬掩模层用线图案图案化。 在第一金属硬掩模层上方施加至少一个介电材料层，第二金属硬掩模层，第一有机平坦化层（OPL）和第一光致抗蚀剂。 第一通孔图案从第一光致抗蚀剂层转移到第二金属硬掩模层中。 第二OPL和第二光致抗蚀剂被施加和图案化，第二通孔图案被转移到第二金属硬掩模层中。 第一和第二通孔图案的第一复合图案被转移到至少一个介电材料层中。 将第一复合图案与第一金属硬掩模层中的开口的面积限制的第二复合图案被转移到互连级介质层中。

公开(公告)号：US20130216776A1

公开(公告)日：2013-08-22

申请号：US13402068

申请日：2012-02-22

申请人： John C. Arnold ,  Sean D. Burns ,  Steven J. Holmes ,  David V. Horak ,  Muthumanickam Sankarapandian ,  Yunpeng Yin

发明人： John C. Arnold ,  Sean D. Burns ,  Steven J. Holmes ,  David V. Horak ,  Muthumanickam Sankarapandian ,  Yunpeng Yin

IPC分类号： B32B3/00 ,  G03F7/20

CPC分类号： H01L23/5226 ,  G03F7/0035 ,  G03F7/091 ,  G03F7/094 ,  H01L21/0332 ,  H01L21/0338 ,  H01L21/3081 ,  H01L21/3088 ,  H01L21/31144 ,  H01L21/76811 ,  H01L21/76816 ,  H01L2924/0002 ,  Y10T428/24355 ,  H01L2924/00

摘要： A first metallic hard mask layer over an interconnect-level dielectric layer is patterned with a line pattern. At least one dielectric material layer, a second metallic hard mask layer, a first organic planarization layer (OPL), and a first photoresist are applied above the first metallic hard mask layer. A first via pattern is transferred from the first photoresist layer into the second metallic hard mask layer. A second OPL and a second photoresist are applied and patterned with a second via pattern, which is transferred into the second metallic hard mask layer. A first composite pattern of the first and second via patterns is transferred into the at least one dielectric material layer. A second composite pattern that limits the first composite pattern with the areas of the openings in the first metallic hard mask layer is transferred into the interconnect-level dielectric layer.

摘要翻译： 在互连级介质层上的第一金属硬掩模层用线图案图案化。 在第一金属硬掩模层上方施加至少一个介电材料层，第二金属硬掩模层，第一有机平坦化层（OPL）和第一光致抗蚀剂。 第一通孔图案从第一光致抗蚀剂层转移到第二金属硬掩模层中。 第二OPL和第二光致抗蚀剂被施加和图案化，第二通孔图案被转移到第二金属硬掩模层中。 第一和第二通孔图案的第一复合图案被转移到至少一个介电材料层中。 将第一复合图案与第一金属硬掩模层中的开口的面积限制的第二复合图案被转移到互连级介质层中。