摘要:
Disclosed are a method and a system for processing a semiconductor structure of the type including a substrate, a dielectric layer, and a TaN—Ta liner on the dielectric layer. The method comprises the step of using XeF2 to remove at least a portion of the TaN—Ta liner completely to the dielectric layer. In the preferred embodiments, the present invention uses XeF2 selective gas phase etching as alternatives to Ta—TaN Chemical Mechanical Polishing (CMP) as a basic “liner removal process” and as a “selective cap plating base removal process.” In this first use, XeF2 is used to remove the metal liner, TaN—Ta, after copper CMP. In the second use, the XeF2 etch is used to selectively remove a plating base (TaN—Ta) that was used to form a metal cap layer over the copper conductor.
摘要:
Disclosed are a method and a system for processing a semiconductor structure of the type including a substrate, a dielectric layer, and a TaN—Ta liner on the dielectric layer. The method comprises the step of using XeF2 to remove at least a portion of the TaN—Ta liner completely to the dielectric layer. In the preferred embodiments, the present invention uses XeF2 selective gas phase etching as alternatives to Ta—TaN Chemical Mechanical Polishing (CMP) as a basic “liner removal process” and as a “selective cap plating base removal process.” In this first use, XeF2 is used to remove the metal liner, TaN—Ta, after copper CMP. In the second use, the XeF2 etch is used to selectively remove a plating base (TaN—Ta) that was used to form a metal cap layer over the copper conductor.
摘要:
Disclosed are a method and a system for processing a semiconductor structure of the type including a substrate, a dielectric layer, and a TaN—Ta liner on the dielectric layer. The method comprises the step of using XeF2 to remove at least a portion of the TaN—Ta liner completely to the dielectric layer. In the preferred embodiments, the present invention uses XeF2 selective gas phase etching as alternatives to Ta—TaN Chemical Mechanical Polishing (CMP) as a basic “liner removal process” and as a “selective cap plating base removal process.” In this first use, XeF2 is used to remove the metal liner, TaN—Ta, after copper CMP. In the second use, the XeF2 etch is used to selectively remove a plating base (TaN—Ta) that was used to form a metal cap layer over the copper conductor.
摘要:
A method of patterning and releasing chemically sensitive low k films without the complication of a permanent hardmask stack, yielding an unaltered free-standing structure is provided. The method includes providing a structure including a Si-containing substrate having in-laid etch stop layers located therein; forming a chemically sensitive low k film and a protective hardmask having a pattern atop the structure; transferring the pattern to the chemically sensitive low k film to provide an opening that exposes a portion of the Si-containing substrate; and etching the exposed portion of the Si-containing substrate through the opening to provide a cavity in the Si-containing substrate in which a free-standing low k film structure is formed, while removing the hardmask. In accordance with the present invention, the etching comprises a XeF2 etch gas.
摘要翻译:提供了图案化和释放化学敏感性低k膜的方法,而不需要永久性硬掩模堆叠的复杂性,产生未改变的独立结构。 该方法包括提供包括其中位于其中的内置蚀刻停止层的含Si衬底的结构; 形成化学敏感的低k膜和在结构顶部具有图案的保护性硬掩模; 将图案转移到化学敏感的低k膜上以提供暴露一部分含Si衬底的开口; 并且通过所述开口蚀刻含Si衬底的暴露部分,以在去除硬掩模的同时在其中形成独立的低k膜结构的含Si衬底中提供空腔。 根据本发明,蚀刻包括XeF 2 N 2蚀刻气体。
摘要:
Disclosed is a capacitive electrostatic MEMS RF switch comprised of a lower electrode that acts as both a transmission line and as an actuation electrode. Also, there is an array of one or more fixed beams above the lower electrode that is connected to ground. The lower electrode transmits the RF signal when the top beam or beams are up and when the upper beams are actuated and bent down, the transmission line is shunted to ground ending the RF transmission. A high dielectric constant material is used in the capacitive portion of the switch to achieve a high capacitance per unit area thus reducing the required chip area and enhancing the insertion loss characteristics in the non-actuated state. A gap between beam and lower electrode of less than 1 &mgr;m is incorporated in order to minimize the electrostatic potential (pull-in voltage) required to actuate the switch.
摘要:
A semiconductor micro-electromechanical system (MEMS) switch provided with noble metal contacts that act as an oxygen barrier to copper electrodes is described. The MEMS switch is fully integrated into a CMOS semiconductor fabrication line. The integration techniques, materials and processes are fully compatible with copper chip metallization processes and are typically, a low cost and a low temperature process (below 400° C.). The MEMS switch includes: a movable beam within a cavity, the movable beam being anchored to a wall of the cavity at one or both ends of the beam; a first electrode embedded in the movable beam; and a second electrode embedded in an wall of the cavity and facing the first electrode, wherein the first and second electrodes are respectively capped by the noble metal contact.
摘要:
A semiconductor micro-electromechanical system (MEMS) switch provided with noble metal contacts that act as an oxygen barrier to copper electrodes is described. The MEMS switch is fully integrated into a CMOS semiconductor fabrication line. The integration techniques, materials and processes are fully compatible with copper chip metallization processes and are typically, a low cost and a low temperature process (below 400°0 C.). The MEMS switch includes: a movable beam within a cavity, the movable beam being anchored to a wall of the cavity at one or both ends of the beam; a first electrode embedded in the movable beam; and a second electrode embedded in an wall of the cavity and facing the first electrode, wherein the first and second electrodes are respectively capped by the noble metal contact.
摘要:
An inductor and a method of forming and the inductor, the method including: (a) forming a dielectric layer on a top surface of a substrate; (b) forming a lower trench in the dielectric layer; (c) forming a resist layer on a top surface of the dielectric layer; (d) forming an upper trench in the resist layer, the upper trench aligned to the lower trench, a bottom of the upper trench open to the lower trench; and (e) completely filling the lower trench at least partially filling the upper trench with a conductor in order to form the inductor. The inductor including a top surface, a bottom surface and sidewalls, a lower portion of said inductor extending a fixed distance into a dielectric layer formed on a semiconductor substrate and an upper portion extending above said dielectric layer; and means to electrically contact said inductor.
摘要:
A surface cleaning apparatus comprising a chamber, and a thermal transfer device. The chamber is capable of holding a semiconductor structure therein. The thermal transfer device is connected to the chamber. The thermal transfer device has a surface disposed inside the chamber for contacting the semiconducting structure and controlling a temperature of the semiconductor structure in contact with the surface. The thermal transfer device has a thermal control module connected to the surface for heating and cooling the surface to thermally cycle the surface. The thermal control module effects a substantially immediate thermal response of the surface when thermally recycling the surface.
摘要:
Patterned copper structures are fabricated by selectively capping the copper employing selective etching and/or selective electroplating in the presence of a liner material. Apparatus for addressing the problem of an increased resistive path as electrolyte during electroetching and/or electroplating flows from the wafer edge inwards is provided.