公开(公告)号：US20130113043A1

公开(公告)日：2013-05-09

申请号：US13292629

申请日：2011-11-09

申请人： John G. MASSEY ,  Scott J. McALLISTER ,  Charles J. MONTROSE ,  Stewart E. RAUCH, III

发明人： John G. MASSEY ,  Scott J. McALLISTER ,  Charles J. MONTROSE ,  Stewart E. RAUCH, III

IPC分类号： H01L27/12 ,  G06F17/50 ,  H01L21/336

CPC分类号： H01L21/84 ,  H01L27/1108 ,  H01L27/1203

摘要： A radiation hardened static memory cell, methods of manufacture and design structures are provided. The method includes forming one or more first gate stacks and second gate stacks on a substrate. The method further includes providing a shallow implant process for the one or more first gate stacks such that diffusion regions of the one or more first gate stacks are non-butted junction regions. The method further includes providing a deep implant process for the one or more second gates stack such that diffusions regions of the one or more second gate stacks are butted junction regions.

摘要翻译： 提供了辐射硬化的静电记忆单元，制造方法和设计结构。 该方法包括在衬底上形成一个或多个第一栅极叠层和第二栅极叠层。 该方法还包括为一个或多个第一栅极堆叠提供浅注入工艺，使得一个或多个第一栅极叠层的扩散区域是非对接结的区域。 所述方法还包括为所述一个或多个第二栅极堆叠提供深度注入工艺，使得所述一个或多个第二栅极叠层的扩散区域为对接结区域。