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1.发明授权Materials and optical devices based on group IV quantum wells grown on Si-Ge-Sn buffered silicon 失效基于在Si-Ge-Sn缓冲硅上生长的IV族量子阱的材料和光学器件公开(公告)号：US07582891B2
公开(公告)日：2009-09-01
申请号：US11663024
申请日：2005-09-16
申请人： John Kouvetakis , Jose Menendez , John Tolle , Ling Liao , Dean Samara-Rubio
发明人： John Kouvetakis , Jose Menendez , John Tolle , Ling Liao , Dean Samara-Rubio
IPC分类号： H01L29/739
CPC分类号： G02F1/017 , B82Y20/00 , G02F1/01708 , G02F2001/0157 , G02F2203/11 , H01L21/02381 , H01L21/0245 , H01L21/02452 , H01L21/02532 , H01L21/02535 , H01L21/0262 , H01L31/028 , H01L31/035254 , H01L31/109 , Y02E10/547
摘要： Semiconductor structures having at least one quantum well heterostructure grown strain-free on Si(100) via a Sn1-xGex buffer layer and their uses are provided.
摘要翻译： 提供了具有通过Sn1-xGex缓冲层在Si（100）上生长无应变的至少一个量子阱异质结的半导体结构及其用途。
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2.发明申请Materials and Optical Devices Based on Group IV Quantum Wells Grown on Si-Ge-Sn Buffered Silicon 失效基于Si-Ge-Sn缓冲硅上生长的IV族量子阱的材料和光学器件公开(公告)号：US20080277647A1
公开(公告)日：2008-11-13
申请号：US11663024
申请日：2005-09-16
申请人： John Kouvetakis , Jose Menendez , John Tolle , Ling Liao , Dean Samara-Rubio
发明人： John Kouvetakis , Jose Menendez , John Tolle , Ling Liao , Dean Samara-Rubio
IPC分类号： H01L31/0264
CPC分类号： G02F1/017 , B82Y20/00 , G02F1/01708 , G02F2001/0157 , G02F2203/11 , H01L21/02381 , H01L21/0245 , H01L21/02452 , H01L21/02532 , H01L21/02535 , H01L21/0262 , H01L31/028 , H01L31/035254 , H01L31/109 , Y02E10/547
摘要： A semiconductor structure including a single quantum well Ge1−x1−ySix1Sn/Ge1−x2Six2 heterostructure grown strain-free on Si(100) via a Sn1−xGex buffer layer is shown.
摘要翻译： 包括单量子阱的半导体结构Ge 1-x1-y Si 1 Sn 1 / x 1 x 2 Si x 2 x 2 示出了在Si（100）上通过Sn 1-x N Ge x S x缓冲层生长无应变的异质结构。
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公开(公告)号：US20060120653A1
公开(公告)日：2006-06-08
申请号：US11328482
申请日：2006-01-09
申请人： Dean Samara-Rubio , Ling Liao , Dexter Hodge
发明人： Dean Samara-Rubio , Ling Liao , Dexter Hodge
CPC分类号： G02F1/2257 , G02F1/025 , G02F2001/0152
摘要： A doped barrier region included in an optical phase shifter is disclosed. In one embodiment, an apparatus according to embodiments of the present invention includes a first region of an optical waveguide and a second region of the optical waveguide. The second region of the optical waveguide includes a higher doped region of material and a lower doped region of material. An insulating region disposed between the first and second regions of the optical waveguide is also included. A first portion the higher doped region is disposed proximate to the insulating region. A dopant barrier region is also included and is disposed between the higher and lower doped regions of the second region of the optical waveguide.
摘要翻译： 公开了包括在光学移相器中的掺杂阻挡区域。 在一个实施例中，根据本发明的实施例的装置包括光波导的第一区域和光波导的第二区域。 光波导的第二区域包括较高掺杂材料区域和较低掺杂区域的材料。 还包括设置在光波导的第一和第二区域之间的绝缘区域。 高掺杂区域的第一部分靠近绝缘区域设置。 还包括掺杂剂阻挡区并且设置在光波导的第二区的较高和较低掺杂区之间。
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公开(公告)号：US20050281525A1
公开(公告)日：2005-12-22
申请号：US10872982
申请日：2004-06-21
申请人： Dean Samara-Rubio , Ling Liao , Dexter Hodge
发明人： Dean Samara-Rubio , Ling Liao , Dexter Hodge
CPC分类号： G02F1/2257 , G02F1/025 , G02F2001/0152
摘要： A doped barrier region included in an optical phase shifter is disclosed. In one embodiment, an apparatus according to embodiments of the present invention includes a first region of an optical waveguide and a second region of the optical waveguide. The second region of the optical waveguide includes a higher doped region of material and a lower doped region of material. An insulating region disposed between the first and second regions of the optical waveguide is also included. A first portion the higher doped region is disposed proximate to the insulating region. A dopant barrier region is also included and is disposed between the higher and lower doped regions of the second region of the optical waveguide.
摘要翻译： 公开了包括在光学移相器中的掺杂阻挡区域。 在一个实施例中，根据本发明的实施例的装置包括光波导的第一区域和光波导的第二区域。 光波导的第二区域包括较高掺杂材料区域和较低掺杂区域的材料。 还包括设置在光波导的第一和第二区域之间的绝缘区域。 高掺杂区域的第一部分靠近绝缘区域设置。 还包括掺杂剂阻挡区并且设置在光波导的第二区的较高和较低掺杂区之间。
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5.发明授权Method and apparatus for adding/droping optical signals in a semiconductor substrate 有权用于在半导体衬底中加/减光信号的方法和装置公开(公告)号：US06856732B2
公开(公告)日：2005-02-15
申请号：US09967365
申请日：2001-09-28
CPC分类号： G02B6/124 , G02B2006/12097 , G02B2006/12135 , G02F1/0147 , G02F1/025 , G02F2201/307
摘要： A semiconductor-based tunable add/drop method and apparatus. In one aspect of the present invention, a method according to an embodiment of the present invention includes splitting a first optical beam having multiple wavelengths into second and third optical beams with a first 3 dB optical coupler disposed in a semiconductor substrate. Portions of the second and third optical beams having a tunable wavelength are reflected back to the first 3 dB optical coupler with first and second pluralities of silicon and polysilicon interfaces, respectively, disposed along the semiconductor substrate. In another embodiment, the portions of the second and third optical beams having a tunable wavelength are reflected back to the first 3 dB optical coupler with first and second pluralities of modulated charged regions. Portions of the second and third optical beams not reflected are directed to a second 3 dB optical coupler disposed in the semiconductor substrate. The portions of the second and third optical beams not reflected are combined into a fourth optical beam with the second 3 dB optical coupler.
摘要翻译： 一种基于半导体的可调加/减方法和装置。 在本发明的一个方面中，根据本发明实施例的方法包括：将具有多个波长的第一光束分成第二和第三光束，其中第一个3dB光耦合器设置在半导体衬底中。 具有可调谐波长的第二和第三光束的部分被分别沿着半导体衬底设置的第一和第二多个硅和多晶硅接口反射回到第一3d分量光耦合器。 在另一个实施例中，具有可调谐波长的第二和第三光束的部分被第一和第二多个调制带电区域反射回到第一3d分量光耦合器。 未反射的第二和第三光束的部分被引导到设置在半导体衬底中的第二3dB光耦合器。 未反射的第二和第三光束的部分与第二3dB光耦合器组合成第四光束。
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公开(公告)号：US20050220406A1
公开(公告)日：2005-10-06
申请号：US10813637
申请日：2004-03-31
申请人： Richard Jones , Oded Cohen , Ling Liao
发明人： Richard Jones , Oded Cohen , Ling Liao
CPC分类号： G02B6/136 , G02B6/124 , G02B2006/12097
摘要： Embodiments of the invention describe a silicon oxynitride Bragg grating disposed in a semiconductive layer on an insulating substrate. The grating may be formed of alternating silicon oxynitride elements that differ in a relative composition of oxygen and nitrogen. The different composition elements have different refractive indices that may vary within a desired range.
摘要翻译： 本发明的实施例描述了设置在绝缘基板上的半导体层中的氮氧化硅布拉格光栅。 光栅可以由氧和氮的相对组成不同而交替的氮氧化硅元素形成。 不同的组成元素具有不同的折射率，其可以在期望的范围内变化。
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7.发明申请Method and Apparatus for High Speed Silicon Optical Modulation Using PN Diode 有权使用PN二极管的高速硅光调制方法和装置公开(公告)号：US20100080504A1
公开(公告)日：2010-04-01
申请号：US12242454
申请日：2008-09-30
申请人： Yoel Shetrit , Ling Liao , Amsheng Liu
发明人： Yoel Shetrit , Ling Liao , Amsheng Liu
IPC分类号： G02B6/12
CPC分类号： G02B6/12004 , G02B2006/12142 , G02F1/025 , G02F1/225 , G02F1/2257
摘要： A method and apparatus for high speed silicon optical modulation is described using a PN diode. In one example, an optical waveguide has adjoining first and second doped semiconductor regions. The first and second regions have opposite doping types and the first doped region extends in two perpendicular directions through the waveguide.
摘要翻译： 使用PN二极管描述用于高速硅光调制的方法和装置。 在一个示例中，光波导具有邻接的第一和第二掺杂半导体区域。 第一和第二区域具有相反的掺杂类型，并且第一掺杂区域在两个垂直方向上延伸穿过波导。
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公开(公告)号：US07184613B2
公开(公告)日：2007-02-27
申请号：US11328482
申请日：2006-01-09
申请人： Dean A. Samara-Rubio , Ling Liao , Dexter W. Hodge
发明人： Dean A. Samara-Rubio , Ling Liao , Dexter W. Hodge
CPC分类号： G02F1/2257 , G02F1/025 , G02F2001/0152
摘要： A doped barrier region included in an optical phase shifter is disclosed. In one embodiment, an apparatus according to embodiments of the present invention includes a first region of an optical waveguide and a second region of the optical waveguide. The second region of the optical waveguide includes a higher doped region of material and a lower doped region of material. An insulating region disposed between the first and second regions of the optical waveguide is also included. A first portion the higher doped region is disposed proximate to the insulating region. A dopant barrier region is also included and is disposed between the higher and lower doped regions of the second region of the optical waveguide.
摘要翻译： 公开了包括在光学移相器中的掺杂阻挡区域。 在一个实施例中，根据本发明的实施例的装置包括光波导的第一区域和光波导的第二区域。 光波导的第二区域包括较高掺杂材料区域和较低掺杂区域的材料。 还包括设置在光波导的第一和第二区域之间的绝缘区域。 高掺杂区域的第一部分靠近绝缘区域设置。 还包括掺杂剂阻挡区并且设置在光波导的第二区的较高和较低掺杂区之间。
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9.发明授权Method and apparatus for high speed silicon optical modulation using PN diode 有权使用PN二极管的高速硅光调制方法和装置公开(公告)号：US07747122B2
公开(公告)日：2010-06-29
申请号：US12242454
申请日：2008-09-30
申请人： Yoel Shetrit , Ling Liao , Ansheng Liu
发明人： Yoel Shetrit , Ling Liao , Ansheng Liu
CPC分类号： G02B6/12004 , G02B2006/12142 , G02F1/025 , G02F1/225 , G02F1/2257
摘要： A method and apparatus for high speed silicon optical modulation is described using a PN diode. In one example, an optical waveguide has adjoining first and second doped semiconductor regions. The first and second regions have opposite doping types and the first doped region extends in two perpendicular directions through the waveguide.
摘要翻译： 使用PN二极管描述用于高速硅光调制的方法和装置。 在一个示例中，光波导具有邻接的第一和第二掺杂半导体区域。 第一和第二区域具有相反的掺杂类型，并且第一掺杂区域在两个垂直方向上延伸穿过波导。
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公开(公告)号：US07035487B2
公开(公告)日：2006-04-25
申请号：US10872982
申请日：2004-06-21
申请人： Dean A. Samara-Rubio , Ling Liao , Dexter W. Hodge
发明人： Dean A. Samara-Rubio , Ling Liao , Dexter W. Hodge
CPC分类号： G02F1/2257 , G02F1/025 , G02F2001/0152
摘要： A doped barrier region included in an optical phase shifter is disclosed. In one embodiment, an apparatus according to embodiments of the present invention includes a first region of an optical waveguide and a second region of the optical waveguide. The second region of the optical waveguide includes a higher doped region of material and a lower doped region of material. An insulating region disposed between the first and second regions of the optical waveguide is also included. A first portion the higher doped region is disposed proximate to the insulating region. A dopant barrier region is also included and is disposed between the higher and lower doped regions of the second region of the optical waveguide.
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