公开(公告)号：US06857435B2

公开(公告)日：2005-02-22

申请号：US10803118

申请日：2004-03-16

申请人： John M. Boyd ,  John deLarios ,  Carl Woods

发明人： John M. Boyd ,  John deLarios ,  Carl Woods

IPC分类号： B08B3/02 ,  B08B3/12 ,  C25F5/00

CPC分类号： B08B3/12 ,  B08B3/02 ,  B08B2203/0288 ,  Y10S134/902

摘要： A method for cleaning a semiconductor substrate with a sonic cleaner is provided. The method initiates by introducing a cooling fluid into an inner jacket region of a sonic cleaner to cool a sonic resonator positioned within the inner jacket region. Then, a cleaning agent is introduced into an outer jacket region of the sonic cleaner to clean a semiconductor substrate. Next, a cooling fluid/cleaning agent interface is defined at an orifice location between the inner jacket region and the outer jacket region. Then, sonic energy from the resonator is transmitted to the cleaning agent through the interface at the orifice. Next, the cleaning agent is applied to the semiconductor substrate.

摘要翻译： 提供了一种用声波清洁器清洗半导体衬底的方法。 该方法通过将冷却流体引入到声音清洁器的内护套区域中来冷却位于内护套区域内的声波谐振器。 然后，将清洁剂引入到声音清洁器的外护套区域中以清洁半导体衬底。 接下来，在内护套区域和外护套区域之间的孔口部位处限定冷却流体/清洁剂界面。 然后，来自谐振器的声能通过孔口处的界面传递到清洁剂。 接下来，将清洁剂施加到半导体衬底。

公开(公告)号：US06729339B1

公开(公告)日：2004-05-04

申请号：US10187162

申请日：2002-06-28

申请人： John M. Boyd ,  John deLarios ,  Carl Woods

发明人： John M. Boyd ,  John deLarios ,  Carl Woods

IPC分类号： B08B600

CPC分类号： B08B3/12 ,  B08B3/02 ,  B08B2203/0288 ,  Y10S134/902

摘要： A method for cleaning a semiconductor substrate is provided. The method initiates with introducing a liquid onto the top surface of the semiconductor substrate. Then, a bottom surface of a resonator is coupled to a top surface of a semiconductor substrate through the liquid. Next, sonic energy is transmitted through the resonator to the liquid. Then, the liquid is heated through the bottom surface of the resonator. A method for applying localized heating to a cleaning chemistry during a cleaning operation of a semiconductor substrate is also provided. The method initiates with positioning a resonator to contact a surface of a cleaning chemistry applied to a semiconductor substrate. Then, heat energy is simultaneously applied with the sonic energy through the resonator to clean the semiconductor substrate. A device for cleaning a semiconductor substrate and system for cleaning a semiconductor substrate are also provided.

摘要翻译： 提供一种清洗半导体衬底的方法。 该方法通过将液体引入到半导体衬底的顶表面上而开始。 然后，谐振器的底表面通过液体耦合到半导体衬底的顶表面。 接下来，声能通过谐振器传输到液体。 然后，液体通过谐振器的底表面被加热。 还提供了在半导体衬底的清洁操作期间将局部加热应用于清洁化学品的方法。 该方法通过定位谐振器来接触施加到半导体衬底的清洁化学品的表面。 然后，通过谐振器与声能同时施加热能来清洁半导体衬底。 还提供了用于清洁半导体衬底的装置和用于清洁半导体衬底的系统。

公开(公告)号：US07862693B2

公开(公告)日：2011-01-04

申请号：US12554860

申请日：2009-09-04

申请人： Yezdi N. Dordi ,  Fred C. Redeker ,  John M. Boyd ,  Robert Maraschin ,  Carl Woods

发明人： Yezdi N. Dordi ,  Fred C. Redeker ,  John M. Boyd ,  Robert Maraschin ,  Carl Woods

IPC分类号： C25D21/12 ,  C25D19/00 ,  C25B15/00

CPC分类号： C25D17/14 ,  C25D5/06 ,  C25D7/123 ,  C25D17/001 ,  C25D21/12 ,  H01L21/2885

摘要： An electroplating apparatus for electroplating a surface of a wafer is provided. The wafer is capable of being electrically charged as a cathode. The electroplating apparatus includes a plating head capable of being positioned either over or under the surface of a wafer and capable of being electrically charged as an anode. The plating head is capable of enabling metallic plating between the surface of the wafer and the plating head when the wafer and plating head are charged. The plating head further comprises a voltage sensor pair capable of sensing a voltage present between the plating head and the surface of the wafer, and a controller capable of receiving data from the voltage sensor pair. The data received from the voltage sensor pair is used by the controller to maintain a substantially constant voltage to be applied by the anode when the plating head is placed in positions over the surface of the wafer. A method of electroplating a wafer is also provided.

摘要翻译： 提供了一种用于电镀晶片表面的电镀设备。 该晶片能够作为阴极充电。 电镀装置包括能够位于晶片表面的上方或下方并能够作为阳极带电的电镀头。 当晶片和电镀头被充电时，电镀头能够在晶片的表面和电镀头之间实现金属电镀。 电镀头还包括能够感测电镀头和晶片表面之间的电压的电压传感器对，以及能够从电压传感器对接收数据的控制器。 当电镀头位于晶片表面上方时，由电压传感器对接收的数据由控制器使用以保持由阳极施加的基本上恒定的电压。 还提供了一种电镀晶片的方法。

公开(公告)号：US20080271992A1

公开(公告)日：2008-11-06

申请号：US10882712

申请日：2004-06-30

申请人： Yezdi N. Dordi ,  Fred C. Redeker ,  John M. Boyd ,  Robert Maraschin ,  Carl Woods

发明人： Yezdi N. Dordi ,  Fred C. Redeker ,  John M. Boyd ,  Robert Maraschin ,  Carl Woods

IPC分类号： C25D17/00

CPC分类号： C25D17/14 ,  C25D5/06 ,  C25D7/123 ,  C25D17/001 ,  C25D21/12 ,  H01L21/2885

摘要： An electroplating apparatus for electroplating a surface of a wafer is provided. The wafer is capable of being electrically charged as a cathode. The electroplating apparatus includes a plating head capable of being positioned either over or under the surface of a wafer and capable of being electrically charged as an anode. The plating head is capable of enabling metallic plating between the surface of the wafer and the plating head when the wafer and plating head are charged. The plating head further comprises a voltage sensor pair capable of sensing a voltage present between the plating head and the surface of the wafer, and a controller capable of receiving data from the voltage sensor pair. The data received from the voltage sensor pair is used by the controller to maintain a substantially constant voltage to be applied by the anode when the plating head is placed in positions over the surface of the wafer. A method of electroplating a wafer is also provided.

摘要翻译： 提供了一种用于电镀晶片表面的电镀设备。 该晶片能够作为阴极充电。 电镀装置包括能够位于晶片表面的上方或下方并能够作为阳极带电的电镀头。 当晶片和电镀头被充电时，电镀头能够在晶片的表面和电镀头之间实现金属电镀。 电镀头还包括能够感测电镀头和晶片表面之间的电压的电压传感器对，以及能够从电压传感器对接收数据的控制器。 当电镀头位于晶片表面上方时，由电压传感器对接收的数据由控制器使用以保持由阳极施加的基本上恒定的电压。 还提供了一种电镀晶片的方法。

公开(公告)号：US06702202B1

公开(公告)日：2004-03-09

申请号：US10186941

申请日：2002-06-28

申请人： John M. Boyd ,  Carl Woods

发明人： John M. Boyd ,  Carl Woods

IPC分类号： B05B300

CPC分类号： H01L21/67051 ,  B08B3/022 ,  Y10S134/902

摘要： A fluid delivery device for delivering fluid to the backside of a substrate while minimizing waste. The device includes an inner cylindrical tube having a top opening and a bottom opening. An upper cap overlying a top portion of the inner cylindrical tube is included. The upper cap is moveably disposed over the inner cylindrical tube. The upper cap includes a top with at least one hole defined therein. The top includes a sidewall extending therefrom. A system and a method for reducing an amount of a cleaning chemistry applied to a backside of a wafer during a cleaning operation are also provided.

摘要翻译： 流体输送装置，用于将流体输送到衬底的背面，同时最小化废物。 该装置包括具有顶部开口和底部开口的内部圆柱形管。 包括覆盖内圆柱形管的顶部的上盖。 上盖可移动地设置在内圆柱形管上。 上盖包括其中限定有至少一个孔的顶部。 顶部包括从其延伸的侧壁。 还提供了一种用于在清洁操作期间减少施加到晶​​片背面的清洁化学品的量的系统和方法。

公开(公告)号：US20090321250A1

公开(公告)日：2009-12-31

申请号：US12554860

申请日：2009-09-04

申请人： Yezdi N. Dordi ,  Fred C. Redeker ,  John M. Boyd ,  Robert Maraschin ,  Carl Woods

发明人： Yezdi N. Dordi ,  Fred C. Redeker ,  John M. Boyd ,  Robert Maraschin ,  Carl Woods

IPC分类号： C25D21/12

CPC分类号： C25D17/14 ,  C25D5/06 ,  C25D7/123 ,  C25D17/001 ,  C25D21/12 ,  H01L21/2885

摘要： An electroplating apparatus for electroplating a surface of a wafer is provided. The wafer is capable of being electrically charged as a cathode. The electroplating apparatus includes a plating head capable of being positioned either over or under the surface of a wafer and capable of being electrically charged as an anode. The plating head is capable of enabling metallic plating between the surface of the wafer and the plating head when the wafer and plating head are charged. The plating head further comprises a voltage sensor pair capable of sensing a voltage present between the plating head and the surface of the wafer, and a controller capable of receiving data from the voltage sensor pair. The data received from the voltage sensor pair is used by the controller to maintain a substantially constant voltage to be applied by the anode when the plating head is placed in positions over the surface of the wafer. A method of electroplating a wafer is also provided.

摘要翻译： 提供了一种用于电镀晶片表面的电镀设备。 该晶片能够作为阴极充电。 电镀装置包括能够位于晶片表面的上方或下方并能够作为阳极带电的电镀头。 当晶片和电镀头被充电时，电镀头能够在晶片的表面和电镀头之间实现金属电镀。 电镀头还包括能够感测电镀头和晶片表面之间的电压的电压传感器对，以及能够从电压传感器对接收数据的控制器。 当电镀头位于晶片表面上方时，由电压传感器对接收的数据被控制器使用以保持由阳极施加的基本恒定的电压。 还提供了一种电镀晶片的方法。

公开(公告)号：US07645364B2

公开(公告)日：2010-01-12

申请号：US10882712

申请日：2004-06-30

申请人： Yezdi N. Dordi ,  Fred C. Redeker ,  John M. Boyd ,  Robert Maraschin ,  Carl Woods

发明人： Yezdi N. Dordi ,  Fred C. Redeker ,  John M. Boyd ,  Robert Maraschin ,  Carl Woods

IPC分类号： C25D21/00

CPC分类号： C25D17/14 ,  C25D5/06 ,  C25D7/123 ,  C25D17/001 ,  C25D21/12 ,  H01L21/2885

摘要： An electroplating apparatus for electroplating a surface of a wafer is provided. The wafer is capable of being electrically charged as a cathode. The electroplating apparatus includes a plating head capable of being positioned either over or under the surface of a wafer and capable of being electrically charged as an anode. The plating head is capable of enabling metallic plating between the surface of the wafer and the plating head when the wafer and plating head are charged. The plating head further comprises a voltage sensor pair capable of sensing a voltage present between the plating head and the surface of the wafer, and a controller capable of receiving data from the voltage sensor pair. The data received from the voltage sensor pair is used by the controller to maintain a substantially constant voltage to be applied by the anode when the plating head is placed in positions over the surface of the wafer. A method of electroplating a wafer is also provided.

摘要翻译： 提供了一种用于电镀晶片表面的电镀设备。 该晶片能够作为阴极充电。 电镀装置包括能够位于晶片表面的上方或下方并能够作为阳极带电的电镀头。 当晶片和电镀头被充电时，电镀头能够在晶片表面和电镀头之间实现金属电镀。 电镀头还包括能够感测电镀头和晶片表面之间的电压的电压传感器对，以及能够从电压传感器对接收数据的控制器。 当电镀头位于晶片表面上方时，由电压传感器对接收的数据由控制器使用以保持由阳极施加的基本上恒定的电压。 还提供了一种电镀晶片的方法。

公开(公告)号：US07128279B2

公开(公告)日：2006-10-31

申请号：US10758029

申请日：2004-01-14

申请人： John M. Boyd ,  Carl Woods

发明人： John M. Boyd ,  Carl Woods

IPC分类号： B05B3/00

CPC分类号： H01L21/67051 ,  B08B3/022 ,  Y10S134/902

摘要： A fluid delivery device for delivering fluid to the backside of a substrate while minimizing waste is provided. The device includes an inner cylindrical tube having a top opening and a bottom opening. An upper cap overlying a top portion of the inner cylindrical tube is included. The upper cap is moveably disposed over the inner cylindrical tube. The upper cap includes a top with at least one hole defined therein. The top includes a sidewall extending therefrom. A system and a method for reducing an amount of a cleaning chemistry applied to a backside of a wafer during a cleaning operation are also provided.

摘要翻译： 提供了用于将流体输送到衬底的背面同时最小化废物的流体输送装置。 该装置包括具有顶部开口和底部开口的内部圆柱形管。 包括覆盖内圆柱形管的顶部的上盖。 上盖可移动地设置在内圆柱形管上。 上盖包括其中限定有至少一个孔的顶部。 顶部包括从其延伸的侧壁。 还提供了一种用于在清洁操作期间减少施加到晶​​片背面的清洁化学品的量的系统和方法。

公开(公告)号：US09117860B2

公开(公告)日：2015-08-25

申请号：US11639752

申请日：2006-12-15

申请人： John Boyd ,  Yezdi Dordi ,  Tiruchirapalli Arunagiri ,  Benjamin W. Mooring ,  John Parks ,  William Thie ,  Fritz C. Redeker ,  Arthur M. Howald ,  Alan Schoepp ,  David Hemker ,  Carl Woods ,  Hyungsuk Alexander Yoon ,  Aleksander Owczarz

发明人： John Boyd ,  Yezdi Dordi ,  Tiruchirapalli Arunagiri ,  Benjamin W. Mooring ,  John Parks ,  William Thie ,  Fritz C. Redeker ,  Arthur M. Howald ,  Alan Schoepp ,  David Hemker ,  Carl Woods ,  Hyungsuk Alexander Yoon ,  Aleksander Owczarz

IPC分类号： H05H1/24 ,  C23C16/00 ,  H01L21/67 ,  H01L21/288 ,  H01L21/768

CPC分类号： H01L21/67225 ,  H01L21/288 ,  H01L21/6704 ,  H01L21/67167 ,  H01L21/67184 ,  H01L21/6723 ,  H01L21/76849

摘要： A cluster architecture and methods for processing a substrate are disclosed. The cluster architecture includes a lab-ambient controlled transfer module that is coupled to one or more wet substrate processing modules. The lab-ambient controlled transfer module and the one or more wet substrate processing modules are configured to manage a first ambient environment. A vacuum transfer module that is coupled to the lab-ambient controlled transfer module and one or more plasma processing modules is also provided. The vacuum transfer module and the one or more plasma processing modules are configured to manage a second ambient environment. And, a controlled ambient transfer module that is coupled to the vacuum transfer module and one or more ambient processing modules is also included. The controlled ambient transfer module and the one or more ambient processing modules are configured to manage a third ambient environment. The cluster architecture therefore enables controlled processing of the substrate in either the first, second or third ambient environments, as well as during associated transitions.

摘要翻译： 公开了用于处理衬底的簇结构和方法。 集群架构包括耦合到一个或多个湿式衬底处理模块的实验室环境受控传输模块。 实验室环境控制传递模块和一个或多个湿式衬底处理模块被配置为管理第一环境环境。 还提供耦合到实验室环境受控传输模块和一个或多个等离子体处理模块的真空传输模块。 真空转移模块和一个或多个等离子体处理模块被配置成管理第二周边环境。 并且，还包括耦合到真空传输模块和一个或多个环境处理模块的受控环境转移模块。 受控环境传输模块和一个或多个环境处理模块被配置为管理第三环境环境。 因此，集群架构使得能够在第一，第二或第三环境环境中以及在相关联的转换期间对衬底进行受控处理。

公开(公告)号：US07406972B2

公开(公告)日：2008-08-05

申请号：US11903289

申请日：2007-09-21

申请人： Carl Woods ,  Michael G. R. Smith ,  John Parks

发明人： Carl Woods ,  Michael G. R. Smith ,  John Parks

IPC分类号： B08B3/00

CPC分类号： B08B3/02 ,  C25D5/08 ,  C25D17/00 ,  C25D17/001 ,  C25D21/00 ,  H01L21/02057 ,  H01L21/67023 ,  H01L21/67028 ,  H01L21/67034 ,  H01L21/6704 ,  H01L21/67051 ,  H01L21/67063 ,  H01L21/6708 ,  Y10S134/902

摘要： An apparatus for generating a fluid meniscus to process a substrate is provided. The apparatus includes a manifold head with a manifold surface having a plurality of conduits configured to generate a fluid meniscus on a substrate surface when positioned proximate the substrate. The manifold head has a plurality of passages capable of communicating fluids with the plurality of conduits. The apparatus also includes an interface membrane attached to a portion of the manifold head. The interface membrane is configured to block a portion of the plurality of conduits during operation.

摘要翻译： 提供了一种用于产生流体弯液面以处理衬底的装置。 该装置包括具有歧管表面的歧管头，歧管表面具有多个导管，其被配置成当定位在衬底附近时在衬底表面上产生流体弯液面。 歧管头部具有能够与多个管道连通的多个通道。 该装置还包括附接到歧管头部的一部分的界面膜。 界面膜构造成在操作期间阻挡多个管道的一部分。