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    Guided wave applicator with non-gaseous dielectric for plasma chamber
    5.
    发明授权
    Guided wave applicator with non-gaseous dielectric for plasma chamber 有权
    带等离子体室的非气体介质的导波器

    公开(公告)号：US09397380B2

    公开(公告)日：2016-07-19

    申请号：US13360652

    申请日：2012-01-27

    申请人： Jozef Kudela ,  Tsutomu Tanaka ,  Carl A. Sorensen ,  Suhail Anwar ,  John M. White

    发明人： Jozef Kudela ,  Tsutomu Tanaka ,  Carl A. Sorensen ,  Suhail Anwar ,  John M. White

    IPC分类号： H01P3/16 ,  H01L21/02 ,  H05H1/46 ,  H01J37/32

    CPC分类号： H01P3/16 ,  H01J37/32229 ,  H01L21/02 ,  H01L21/02104 ,  H05H1/46 ,  H05H2001/4622

    摘要： A guided wave applicator comprising two electrically conductive waveguide walls and a waveguide dielectric. The volume of the waveguide dielectric is composed of non-gaseous dielectric material and is positioned between the two waveguide walls. The waveguide dielectric includes first and second longitudinal ends and includes first, second, third and fourth sides extending longitudinally between the two longitudinal ends. The first waveguide wall is positioned so that it covers the first side of the waveguide dielectric, and the second waveguide wall is positioned so that it covers the second side of the waveguide dielectric. In operation, electrical power can be supplied to one or both longitudinal ends of the waveguide dielectric, whereby the power can be coupled to a plasma through the exposed sides of the waveguide dielectric.

    摘要翻译： 导波装置，其包括两个导电波导壁和波导电介质。 波导介质的体积由非气体电介质材料构成，并且位于两个波导壁之间。 波导电介质包括第一和第二纵向端部，并且包括在两个纵向端部之间纵向延伸的第一，第二，第三和第四侧面。 第一波导壁被定位成使得其覆盖波导电介质的第一侧，并且第二波导壁被定位成使得其覆盖波导电介质的第二侧。 在操作中，可以向波导介质的一个或两个纵向端提供电力，由此可以通过波导电介质的暴露侧将功率耦合到等离子体。

    Guided Wave Applicator with Non-Gaseous Dielectric for Plasma Chamber
    6.
    发明申请
    Guided Wave Applicator with Non-Gaseous Dielectric for Plasma Chamber 有权
    用于等离子室的非气体介质的导波涂敷器

    公开(公告)号：US20130126331A1

    公开(公告)日：2013-05-23

    申请号：US13360652

    申请日：2012-01-27

    申请人： Jozef Kudela ,  Tsutomu Tanaka ,  Carl A. Sorensen ,  Suhail Anwar ,  John M. White

    发明人： Jozef Kudela ,  Tsutomu Tanaka ,  Carl A. Sorensen ,  Suhail Anwar ,  John M. White

    IPC分类号： H01P3/16 ,  H05H1/46 ,  H01L21/02

    CPC分类号： H01P3/16 ,  H01J37/32229 ,  H01L21/02 ,  H01L21/02104 ,  H05H1/46 ,  H05H2001/4622

    摘要： A guided wave applicator comprising two electrically conductive waveguide walls and a waveguide dielectric. The volume of the waveguide dielectric is composed of non-gaseous dielectric material and is positioned between the two waveguide walls. The waveguide dielectric includes first and second longitudinal ends and includes first, second, third and fourth sides extending longitudinally between the two longitudinal ends. The first waveguide wall is positioned so that it covers the first side of the waveguide dielectric, and the second waveguide wall is positioned so that it covers the second side of the waveguide dielectric. In operation, electrical power can be supplied to one or both longitudinal ends of the waveguide dielectric, whereby the power can be coupled to a plasma through the exposed sides of the waveguide dielectric.

    摘要翻译： 导波装置，其包括两个导电波导壁和波导电介质。 波导介质的体积由非气体电介质材料构成，并且位于两个波导壁之间。 波导电介质包括第一和第二纵向端部，并且包括在两个纵向端部之间纵向延伸的第一，第二，第三和第四侧面。 第一波导壁被定位成使得其覆盖波导电介质的第一侧，并且第二波导壁被定位成使得其覆盖波导电介质的第二侧。 在操作中，可以向波导介质的一个或两个纵向端提供电力，由此可以通过波导电介质的暴露侧将功率耦合到等离子体。

    RF Bus and RF Return Bus for Plasma Chamber Electrode
    7.
    发明申请
    RF Bus and RF Return Bus for Plasma Chamber Electrode 有权
    射频总线和等离子腔室电极的RF返回总线

    公开(公告)号：US20100206483A1

    公开(公告)日：2010-08-19

    申请号：US12705600

    申请日：2010-02-13

    申请人： Carl A. Sorensen ,  Jozef Kudela ,  Robin L. Tiner ,  Suhail Anwar ,  John M. White

    发明人： Carl A. Sorensen ,  Jozef Kudela ,  Robin L. Tiner ,  Suhail Anwar ,  John M. White

    IPC分类号： C23F1/08 ,  C23C16/00 ,  C23C16/50

    CPC分类号： H01J37/32174 ,  H01J37/32091

    摘要： For coupling RF power from an RF input of a plasma chamber to the interior of a plasma chamber, an RF bus conductor is connected between the RF input and a plasma chamber electrode. In one embodiment, an RF return bus conductor is connected to an electrically grounded wall of the chamber, and the RF bus conductor and the RF return bus conductor have respective surfaces that are parallel and face each other. In another embodiment, the RF bus conductor has a transverse cross section having a longest dimension oriented perpendicular to the surface of the plasma chamber electrode that is closest to the RF bus conductor.

    摘要翻译： 为了将来自等离子体室的RF输入的RF功率耦合到等离子体室的内部，RF总线导体连接在RF输入端和等离子体室电极之间。 在一个实施例中，RF返回总线导体连接到室的电接地壁，并且RF总线导体和RF返回总线导体具有彼此平行并相对的相应表面。 在另一个实施例中，RF总线导体具有垂直于等离子体室电极表面的最长尺寸的横截面，其最接近RF总线导体。

    RF bus and RF return bus for plasma chamber electrode
    8.
    发明授权
    RF bus and RF return bus for plasma chamber electrode 有权
    用于等离子体室电极的RF总线和RF返回总线

    公开(公告)号：US08992723B2

    公开(公告)日：2015-03-31

    申请号：US12705600

    申请日：2010-02-13

    申请人： Carl A. Sorensen ,  Jozef Kudela ,  Robin L. Tiner ,  Suhail Anwar ,  John M. White

    发明人： Carl A. Sorensen ,  Jozef Kudela ,  Robin L. Tiner ,  Suhail Anwar ,  John M. White

    IPC分类号： H01L21/3065 ,  C23C16/505 ,  H01J37/32

    CPC分类号： H01J37/32174 ,  H01J37/32091

    摘要： For coupling RF power from an RF input of a plasma chamber to the interior of a plasma chamber, an RF bus conductor is connected between the RF input and a plasma chamber electrode. In one embodiment, an RF return bus conductor is connected to an electrically grounded wall of the chamber, and the RF bus conductor and the RF return bus conductor have respective surfaces that are parallel and face each other. In another embodiment, the RF bus conductor has a transverse cross section having a longest dimension oriented perpendicular to the surface of the plasma chamber electrode that is closest to the RF bus conductor.

    摘要翻译： 为了将来自等离子体室的RF输入的RF功率耦合到等离子体室的内部，RF总线导体连接在RF输入端和等离子体室电极之间。 在一个实施例中，RF返回总线导体连接到室的电接地壁，并且RF总线导体和RF返回总线导体具有彼此平行并相对的相应表面。 在另一个实施例中，RF总线导体具有垂直于等离子体室电极表面的最长尺寸的横截面，其最接近RF总线导体。

    Plasma source with vertical gradient
    9.
    发明授权
    Plasma source with vertical gradient 有权
    等离子源与垂直梯度

    公开(公告)号：US08872428B2

    公开(公告)日：2014-10-28

    申请号：US13405297

    申请日：2012-02-25

    申请人： Jozef Kudela ,  Tsutomu Tanaka ,  Suhail Anwar ,  Carl A. Sorensen ,  John M. White

    发明人： Jozef Kudela ,  Tsutomu Tanaka ,  Suhail Anwar ,  Carl A. Sorensen ,  John M. White

    IPC分类号： H05H1/24 ,  H05H1/46 ,  C23C14/02 ,  C23C14/34 ,  C23C14/58

    CPC分类号： H05H1/46 ,  C23C14/028 ,  C23C14/34 ,  C23C14/58 ,  H05H2001/4682

    摘要： A plasma source includes upper and lower portions. In a first aspect, an electrical power source supplies greater power to the upper portion than to the lower portion. In a second aspect, the plasma source includes three or more power couplers that are spaced apart vertically, wherein the number of plasma power couplers in the upper portion is greater than the number of plasma power couplers in the lower portion. The upper and lower portions of the plasma source can be defined as respectively above and below a horizontal geometric plane that bisects the vertical height of the plasma source. Alternatively, the upper and lower portions can be defined as respectively above and below a horizontal geometric plane that bisects the combined area of first and second workpiece positions.

    摘要翻译： 等离子体源包括上部和下部。 在第一方面，电源向上部提供比下部更大的功率。 在第二方面，等离子体源包括三个或更多个垂直间隔开的功率耦合器，其中上部中的等离子体功率耦合器的数量大于下部中的等离子体功率耦合器的数量。 等离子体源的上部和下部可以分别在等分于等离子体源的垂直高度的水平几何平面之上和之下。 或者，上部和下部可以分别在平分第一和第二工件位置的组合区域的水平几何平面的上方和下方。

    Plasma Source with Vertical Gradient
    10.
    发明申请
    Plasma Source with Vertical Gradient 有权
    等离子源与垂直梯度

    公开(公告)号：US20120217874A1

    公开(公告)日：2012-08-30

    申请号：US13405297

    申请日：2012-02-25

    申请人： Jozef Kudela ,  Tsutomu Tanaka ,  Suhail Anwar ,  Carl A. Sorensen ,  John M. White

    发明人： Jozef Kudela ,  Tsutomu Tanaka ,  Suhail Anwar ,  Carl A. Sorensen ,  John M. White

    IPC分类号： H05H1/24 ,  H01L21/3065 ,  C23C16/50

    CPC分类号： H05H1/46 ,  C23C14/028 ,  C23C14/34 ,  C23C14/58 ,  H05H2001/4682

    摘要： A plasma source includes upper and lower portions. In a first aspect, an electrical power source supplies greater power to the upper portion than to the lower portion. In a second aspect, the plasma source includes three or more power couplers that are spaced apart vertically, wherein the number of plasma power couplers in the upper portion is greater than the number of plasma power couplers in the lower portion. The upper and lower portions of the plasma source can be defined as respectively above and below a horizontal geometric plane that bisects the vertical height of the plasma source. Alternatively, the upper and lower portions can be defined as respectively above and below a horizontal geometric plane that bisects the combined area of first and second workpiece positions.

    摘要翻译： 等离子体源包括上部和下部。 在第一方面，电源向上部提供比下部更大的功率。 在第二方面，等离子体源包括三个或更多个垂直间隔开的功率耦合器，其中上部中的等离子体功率耦合器的数量大于下部中的等离子体功率耦合器的数量。 等离子体源的上部和下部可以分别在等分于等离子体源的垂直高度的水平几何平面之上和之下。 或者，上部和下部可以分别在平分第一和第二工件位置的组合区域的水平几何平面的上方和下方。