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103 条记录 (耗时 0.031 秒)

    Method and apparatus for drying substrates using a surface tensions reducing gas
    1.
    发明申请
    Method and apparatus for drying substrates using a surface tensions reducing gas 审中-公开
    使用表面张力降低气体干燥基材的方法和装置

    公开(公告)号：US20080148595A1

    公开(公告)日：2008-06-26

    申请号：US11643479

    申请日：2006-12-20

    申请人： John M. de Larios ,  Paul A. Kittle ,  Michael Ravkin ,  Mikhail Korolik ,  Erik Freer ,  Katrina Mikhaylich ,  Fritz C. Redeker

    发明人： John M. de Larios ,  Paul A. Kittle ,  Michael Ravkin ,  Mikhail Korolik ,  Erik Freer ,  Katrina Mikhaylich ,  Fritz C. Redeker

    IPC分类号： F26B7/00 ,  F26B21/00

    CPC分类号： F26B5/14 ,  F26B21/14 ,  H01L21/67034

    摘要： A method for processing a substrate using a proximity head is disclosed. The method is initiated by, providing a head with a head surface positioned proximate to a surface of the substrate. The head has a width and a length, and the head has a plurality of ports that are configured in rows along the length of the head. The plurality of rows can extend over a width of the head, and there is a first group of ports configured to dispense a first fluid. The first fluid is dispensed to the surface of the substrate forming a meniscus between the surface of the substrate and the surface of the head. The method also includes delivering gaseous carbon dioxide from a second group of ports of the head to an interface between the meniscus and the substrate. The carbon dioxide assists in promoting a reduced surface tension on the meniscus relative to surface of the substrate.

    摘要翻译： 公开了一种使用邻近头来处理衬底的方法。 该方法是通过提供具有靠近基板的表面定位的头表面的头来开始的。 头部具有宽度和长度，头部具有沿头部长度配置成行的多个端口。 多个行可以在头部的宽度上延伸，并且存在被配置为分配第一流体的第一组端口。 将第一流体分配到基材的表面，在基材的表面和头部表面之间形成弯液面。 该方法还包括将气态二氧化碳从头部的第二组端口输送到弯月面和基底之间的界面。 二氧化碳有助于相对于基底表面促进弯月面上的表面张力降低。

    Method for cleaning semiconductor wafer surfaces by applying periodic shear stress to the cleaning solution
    4.
    发明申请
    Method for cleaning semiconductor wafer surfaces by applying periodic shear stress to the cleaning solution 审中-公开
    通过向清洗溶液施加周期性剪切应力来清洁半导体晶片表面的方法

    公开(公告)号：US20080245390A1

    公开(公告)日：2008-10-09

    申请号：US11732603

    申请日：2007-04-03

    申请人： Erik M. Freer ,  John M. de Larios ,  Michael Ravkin ,  Mikhail Korolik ,  Fritz C. Redeker

    发明人： Erik M. Freer ,  John M. de Larios ,  Michael Ravkin ,  Mikhail Korolik ,  Fritz C. Redeker

    IPC分类号： B08B3/12

    CPC分类号： B08B3/12 ,  H01L21/67051 ,  H01L21/67057

    摘要： Systems and methods for cleaning particulate contaminants adhered to wafer surfaces are provided. A cleaning media including dispersed coupling elements suspended within the cleaning media is applied over a wafer surface. External energy is applied to the cleaning media to generate periodic shear stresses within the media. The periodic shear stresses impart momentum and/or drag forces on the coupling elements causing the coupling elements to interact with the particulate contaminants to remove the particulate contaminants from the wafer surfaces.

    摘要翻译： 提供了清洁附着在晶片表面上的颗粒污染物的系统和方法。 包括悬浮在清洁介质内的分散的耦合元件的清洁介质被施加在晶片表面上。 外部能量被施加到清洁介质以在介质内产生周期性剪切应力。 周期性剪切应力赋予耦合元件上的动量和/或阻力，导致耦合元件与颗粒污染物相互作用以从晶片表面去除颗粒污染物。

    SUBSTRATE CLEANING TECHNIQUE EMPLOYING MULTI-PHASE SOLUTION
    5.
    发明申请
    SUBSTRATE CLEANING TECHNIQUE EMPLOYING MULTI-PHASE SOLUTION 审中-公开
    基板清洗技术采用多相解决方案

    公开(公告)号：US20130206182A1

    公开(公告)日：2013-08-15

    申请号：US13750226

    申请日：2013-01-25

    申请人： Erik M. Freer ,  John M. de Larios ,  Michael Ravkin ,  Mikhail Korolik ,  Fritz C. Redeker

    发明人： Erik M. Freer ,  John M. de Larios ,  Michael Ravkin ,  Mikhail Korolik ,  Fritz C. Redeker

    IPC分类号： H01L21/02

    CPC分类号： H01L21/02057 ,  H01L21/02052 ,  H01L21/67034 ,  H01L21/67057 ,  H01L21/67751

    摘要： Apparatus, methods, and computer programs for cleaning opposed surfaces of a semiconductor wafer are presented. One apparatus includes first, second, and third valves, and one or more second drains. The first valves are coupled to a supply of rinsing solution and to first throughways that are coupled to an immersion tank above a region in the immersion tank, the region being defined by an area occupied by the substrate when the substrate is disposed vertically on a support within the immersion tank. The second valves are coupled to first drains and to second throughways that are coupled to the immersion tank below the region, and the third valves are coupled to a supply of cleaning solution and to third throughways that are coupled to the immersion tank below the region. Further, the second drains are coupled to fourth throughways that are coupled to the immersion tank above the region.

    摘要翻译： 提出了用于清洁半导体晶片的相对表面的装置，方法和计算机程序。 一个装置包括第一，第二和第三阀，以及一个或多个第二排水管。 第一阀被连接到冲洗溶液的供应和第一通道，其连接到浸没池中的浸没池上方的区域上，该区域由衬底占据的区域限定，当衬底垂直地布置在支撑件上时 在沉浸池内。 第二阀联接到第一通道和第二通道，第二通道连接到位于该区域下方的浸入式水箱，并且第三阀被联接到清洁溶液的供应和连接到该区域下方的浸没罐的第三通道。 此外，第二排水管连接到连接到该区域上方的浸没罐的第四通道。

    Apparatus and system for cleaning a substrate
    9.
    发明授权
    Apparatus and system for cleaning a substrate 有权
    用于清洁衬底的装置和系统

    公开(公告)号：US08522799B2

    公开(公告)日：2013-09-03

    申请号：US11532493

    申请日：2006-09-15

    申请人： Erik M. Freer ,  John M. de Larios ,  Katrina Mikhaylichenko ,  Michael Ravkin ,  Mikhail Korolik ,  Fred C. Redeker ,  Clint Thomas ,  John Parks

    发明人： Erik M. Freer ,  John M. de Larios ,  Katrina Mikhaylichenko ,  Michael Ravkin ,  Mikhail Korolik ,  Fred C. Redeker ,  Clint Thomas ,  John Parks

    IPC分类号： B08B3/00

    CPC分类号： H01L21/67051 ,  B08B3/003 ,  B08B3/02

    摘要： An apparatus for cleaning a substrate is disclosed. The apparatus having a first head unit and a second head unit. The first head unit is positioned proximate to the surface of the substrate and has a first row of channels defined within configured to supply a foam to the surface of the substrate. The second head unit is positioned substantially adjacent to the first head unit and proximate to the surface of the substrate. A second and a third row of channels are defined within the second head unit. The second row of channels is configured to supply a fluid to the surface of the substrate. The third row of channels is configured to apply a vacuum to the surface of the substrate.

    摘要翻译： 公开了一种用于清洁衬底的设备。 该装置具有第一头单元和第二头单元。 第一头单元定位成接近基底的表面，并且具有限定在构造成向基底的表面提供泡沫的第一排通道。 第二头单元被定位成基本上与第一头单元相邻并且靠近衬底的表面。 第二和第三行通道被限定在第二头单元内。 第二排通道被配置成向衬底的表面提供流体。 第三排通道被配置为向基板的表面施加真空。