摘要:
A flash evaporator heater including a substrate formed of an intermetallic compound or of graphite and having an outer coating composed of pyrolytic boron nitride or pyrolytic graphite. The substrate has a substantially rectangular configuration with a substantially flat upper surface and a recessed cavity. The cavity has a longitudinal cross sectional geometry which forms a slope intersecting the substantially flat upper surface of the substrate at an angle .alpha. of less than 60 degrees.
摘要:
A containment vessel for evaporating materials for use in applying film coatings to a substrate includes a body fabricated from a refractory material. In one embodiment the body includes end portions capable of being connected to other bodies in an end to end fashion. In another embodiment, the body includes an integral patterned conductor incorporated into the outer surface portion of the body to facilitate association with an electrical power source for heating.
摘要:
A containment vessel for evaporating materials for use in applying film coatings to a substrate includes a body fabricated from a refractory material. In one embodiment the body includes end portions capable of being connected to other bodies in an end to end fashion. In another embodiment, the body includes an integral patterned conductor incorporated into the outer surface portion of the body to facilitate association with an electrical power source for heating.
摘要:
A flash evaporator vaporization vessel for flash evaporating metal under conditions of repeated thermal cycling having a graphite body, an outer layer of pyrolytic boron nitride and an intermediate layer of a material selected from the group consisting of pyrolytic graphite, boron carbide (B.sub.4 C), tantalum carbide, and silicon carbide and having a thickness of no greater than about 0,002 inches.
摘要:
A wafer processing apparatus characterized by having corrosion resistant connections for its electrical connections, gas feed-through channels, recessed areas, raised areas, MESA, through-holes such as lift-pin holes, threaded bolt holes, blind holes, and the like, with the special configurations employing connectors and fillers having excellent chemical resistant properties and optimized CTEs, i.e., having a coefficient of thermal expansion (CTE) that closely matches the CTE of the base substrate layer, the electrode(s), as well as the CTE of coating layer. In one embodiment, a nickel plated molybdenum insert is employed.
摘要:
An etch resistant heater for use in a wafer processing assembly with an excellent ramp rate of at least 20° C. per minute. The heater is coated with a protective overcoating layer allowing the heater to have a radiation efficiency above 70% at elevated heater temperatures of >1500° C., and an etch rate in NF3 at 600° C. of less than 100 A/min.