公开(公告)号：US20110229998A1

公开(公告)日：2011-09-22

申请号：US11819413

申请日：2007-06-27

申请人： Jonathan S. Steckel ,  John P. Zimmer ,  Seth Coe-Sullivan ,  Nathan E. Stott ,  Vladimir Bulovic ,  Moungi G. Bawendi

发明人： Jonathan S. Steckel ,  John P. Zimmer ,  Seth Coe-Sullivan ,  Nathan E. Stott ,  Vladimir Bulovic ,  Moungi G. Bawendi

IPC分类号： H01L33/06

CPC分类号： C01G9/08 ,  B82Y20/00 ,  B82Y30/00 ,  C01G11/02 ,  C01P2004/04 ,  C01P2004/64 ,  C01P2004/84 ,  C01P2006/40 ,  C09K11/02 ,  C09K11/565 ,  H01L33/18 ,  H01L33/20 ,  H05B33/14

摘要： A semiconductor nanocrystal includes a core including a first semiconductor material and an overcoating including a second semiconductor material. A monodisperse population of the nanocrystals emits blue light over a narrow range of wavelengths with a high quantum efficiency.

公开(公告)号：US20120061644A1

公开(公告)日：2012-03-15

申请号：US13297968

申请日：2011-11-16

申请人： Jonthan S. Steckel ,  John P. Zimmer ,  Seth Coe-Sullivan ,  Nathan E. Stott ,  Vladimir Bulovic ,  Moungi G. Bawendi

发明人： Jonthan S. Steckel ,  John P. Zimmer ,  Seth Coe-Sullivan ,  Nathan E. Stott ,  Vladimir Bulovic ,  Moungi G. Bawendi

IPC分类号： H01L33/06 ,  B82Y20/00

CPC分类号： C01G9/08 ,  B82Y20/00 ,  B82Y30/00 ,  C01G11/02 ,  C01P2004/04 ,  C01P2004/64 ,  C01P2004/84 ,  C01P2006/40 ,  C09K11/02 ,  C09K11/565 ,  H01L33/18 ,  H01L33/20 ,  H05B33/14

摘要： A semiconductor nanocrystal includes a core including a first semiconductor material and an overcoating including a second semiconductor material. A monodisperse population of the nanocrystals emits blue light over a narrow range of wavelengths with a high quantum efficiency.

摘要翻译： 半导体纳米晶体包括包括第一半导体材料的芯和包括第二半导体材料的外涂层。 纳米晶体的单分散群体在具有高量子效率的窄波长范围内发射蓝光。

公开(公告)号：US10225906B2

公开(公告)日：2019-03-05

申请号：US11253595

申请日：2005-10-20

申请人： Seth Coe-Sullivan ,  Jonathan S. Steckel ,  LeeAnn Kim ,  Moungi G. Bawendi ,  Vladimir Bulovic

发明人： Seth Coe-Sullivan ,  Jonathan S. Steckel ,  LeeAnn Kim ,  Moungi G. Bawendi ,  Vladimir Bulovic

IPC分类号： H05B33/10 ,  B41M5/025 ,  B82Y20/00 ,  B82Y30/00 ,  H01L21/67 ,  B41J2/005 ,  B41M3/00 ,  H05B33/14 ,  H01L51/50 ,  H01L51/56 ,  B41M1/02

摘要： A light emitting device includes a semiconductor nanocrystal in a layer. The layer can be a monolayer of semiconductor nanocrystals. The monolayer can form a pattern on a substrate.

公开(公告)号：US09550614B2

公开(公告)日：2017-01-24

申请号：US13486478

申请日：2012-06-01

申请人： Moungi G. Bawendi ,  Vladimir Bulovic ,  Seth Coe-Sullivan ,  Jean-Michel Caruge ,  Jonathan Steckel ,  Jonathan E. Halpert ,  Alexi Arango

发明人： Moungi G. Bawendi ,  Vladimir Bulovic ,  Seth Coe-Sullivan ,  Jean-Michel Caruge ,  Jonathan Steckel ,  Jonathan E. Halpert ,  Alexi Arango

IPC分类号： H01L33/02 ,  B65D71/36 ,  H01L51/50 ,  B65D81/26

CPC分类号： H01L33/14 ,  B65D71/36 ,  B65D81/261 ,  B65D2571/00141 ,  B65D2571/0045 ,  B65D2571/00574 ,  B65D2571/0066 ,  B65D2571/00728 ,  B82Y20/00 ,  B82Y30/00 ,  H01L27/156 ,  H01L33/005 ,  H01L33/06 ,  H01L33/08 ,  H01L33/18 ,  H01L33/26 ,  H01L33/42 ,  H01L51/5012 ,  H01L51/502 ,  H01L51/5048 ,  H01L51/5096 ,  H01L2933/0041

摘要： A light emitting device includes a semiconductor nanocrystal and a charge transporting layer that includes an inorganic material. The charge transporting layer can be a hole or electron transporting layer. The inorganic material can be an inorganic semiconductor.

摘要翻译： 发光器件包括半导体纳米晶体和包含无机材料的电荷输送层。 电荷输送层可以是空穴或电子传输层。 无机材料可以是无机半导体。

公开(公告)号：US20120238047A1

公开(公告)日：2012-09-20

申请号：US13486467

申请日：2012-06-01

申请人： Moungi G. Bawendi ,  Vladimir Bulovic ,  Seth Coe-Sullivan ,  Jean-Michel Caruge ,  Jonathan Steckel ,  Alexi Arango ,  Jonathan E. Halpert

发明人： Moungi G. Bawendi ,  Vladimir Bulovic ,  Seth Coe-Sullivan ,  Jean-Michel Caruge ,  Jonathan Steckel ,  Alexi Arango ,  Jonathan E. Halpert

IPC分类号： H01L33/02 ,  B82Y40/00

CPC分类号： H01L33/14 ,  B65D71/36 ,  B65D81/261 ,  B65D2571/00141 ,  B65D2571/0045 ,  B65D2571/00574 ,  B65D2571/0066 ,  B65D2571/00728 ,  B82Y20/00 ,  B82Y30/00 ,  H01L33/005 ,  H01L33/06 ,  H01L33/18 ,  H01L33/26 ,  H01L33/42 ,  H01L51/5012 ,  H01L51/502 ,  H01L51/5048 ,  H01L51/5096 ,  H01L2933/0041

摘要： A light emitting device includes a semiconductor nanocrystal and a charge transporting layer that includes an inorganic material. The charge transporting layer can be a hole or electron transporting layer. The inorganic material can be an inorganic semiconductor.

公开(公告)号：US20120292595A1

公开(公告)日：2012-11-22

申请号：US13486478

申请日：2012-06-01

申请人： Moungi G. Bawendi ,  Vladimir Bulovic ,  Seth Coe-Sullivan ,  Jean-Michel Caruge ,  Jonathan Steckel ,  Jonathan E. Halpert ,  Alexi Arango

发明人： Moungi G. Bawendi ,  Vladimir Bulovic ,  Seth Coe-Sullivan ,  Jean-Michel Caruge ,  Jonathan Steckel ,  Jonathan E. Halpert ,  Alexi Arango

IPC分类号： H01L33/06

CPC分类号： H01L33/14 ,  B65D71/36 ,  B65D81/261 ,  B65D2571/00141 ,  B65D2571/0045 ,  B65D2571/00574 ,  B65D2571/0066 ,  B65D2571/00728 ,  B82Y20/00 ,  B82Y30/00 ,  H01L27/156 ,  H01L33/005 ,  H01L33/06 ,  H01L33/08 ,  H01L33/18 ,  H01L33/26 ,  H01L33/42 ,  H01L51/5012 ,  H01L51/502 ,  H01L51/5048 ,  H01L51/5096 ,  H01L2933/0041

摘要： A light emitting device includes a semiconductor nanocrystal and a charge transporting layer that includes an inorganic material. The charge transporting layer can be a hole or electron transporting layer. The inorganic material can be an inorganic semiconductor.

摘要翻译： 发光器件包括半导体纳米晶体和包含无机材料的电荷输送层。 电荷输送层可以是空穴或电子传输层。 无机材料可以是无机半导体。

公开(公告)号：US08535758B2

公开(公告)日：2013-09-17

申请号：US11959853

申请日：2007-12-19

申请人： Vladimir Bulovic ,  Seth Coe-Sullivan ,  Wing-Keung Woo ,  Moungi G. Bawendi

发明人： Vladimir Bulovic ,  Seth Coe-Sullivan ,  Wing-Keung Woo ,  Moungi G. Bawendi

IPC分类号： B05D1/34 ,  B05D5/00

CPC分类号： B05D1/34 ,  B05D1/005 ,  B05D7/52 ,  B22F1/0018 ,  B22F1/02 ,  B82Y20/00 ,  B82Y30/00 ,  H01L51/5012 ,  H01L51/5048

摘要： A composition includes a layer of nanoparticles and a layer of a second material.

摘要翻译： 组合物包括纳米颗粒层和第二材料层。

公开(公告)号：US08232722B2

公开(公告)日：2012-07-31

申请号：US11354185

申请日：2006-02-15

申请人： Moungi G. Bawendi ,  Vladimir Bulovic ,  Seth Coe-Sullivan ,  Jean-Michel Caruge ,  Jonathan Steckel ,  Alexi Arango ,  Jonathan E. Halpert

发明人： Moungi G. Bawendi ,  Vladimir Bulovic ,  Seth Coe-Sullivan ,  Jean-Michel Caruge ,  Jonathan Steckel ,  Alexi Arango ,  Jonathan E. Halpert

IPC分类号： H05B33/14 ,  H05B33/18

CPC分类号： H01L33/14 ,  B65D71/36 ,  B65D81/261 ,  B65D2571/00141 ,  B65D2571/0045 ,  B65D2571/00574 ,  B65D2571/0066 ,  B65D2571/00728 ,  B82Y20/00 ,  B82Y30/00 ,  H01L27/156 ,  H01L33/005 ,  H01L33/06 ,  H01L33/08 ,  H01L33/18 ,  H01L33/26 ,  H01L33/42 ,  H01L51/5012 ,  H01L51/502 ,  H01L51/5048 ,  H01L51/5096 ,  H01L2933/0041

摘要： A light emitting device includes a semiconductor nanocrystal and a charge transporting layer that includes an inorganic material. The charge transporting layer can be a hole or electron transporting layer. The inorganic material can be an inorganic semiconductor.

摘要翻译： 发光器件包括半导体纳米晶体和包含无机材料的电荷输送层。 电荷输送层可以是空穴或电子传输层。 无机材料可以是无机半导体。

公开(公告)号：US09054329B2

公开(公告)日：2015-06-09

申请号：US12313779

申请日：2008-11-24

申请人： Seth Coe-Sullivan ,  Dorai Ramprasad ,  Ioannis Kymissis ,  Vladimir Bulovic ,  Marshall Cox ,  Caroline J. Roush ,  Peter T. Kazlas ,  Jonathan S. Steckel

发明人： Seth Coe-Sullivan ,  Dorai Ramprasad ,  Ioannis Kymissis ,  Vladimir Bulovic ,  Marshall Cox ,  Caroline J. Roush ,  Peter T. Kazlas ,  Jonathan S. Steckel

IPC分类号： H01L33/00 ,  H01L51/50 ,  B82Y20/00 ,  B82Y30/00 ,  C09K11/02 ,  C09K11/56 ,  C09K11/88 ,  H05B33/14

CPC分类号： H01L33/06 ,  B82Y20/00 ,  B82Y30/00 ,  C09K11/02 ,  C09K11/565 ,  C09K11/883 ,  H01L27/156 ,  H01L33/0029 ,  H01L33/28 ,  H01L51/5012 ,  H01L51/502 ,  H05B33/145

摘要： Light-emitting devices and displays with improved performance are disclosed. A light-emitting device includes an emissive material disposed between a first electrode, and a second electrode. Various embodiments include a device having a peak external quantum efficiency of at least about 2.2%; a device that emits light having a CIE color coordinate of x greater than 0.63; a device having an external quantum efficiency of at least about 2.2 percent when measured at a current density of 5 mA/cm2. Also disclosed is a light-emitting device comprising a plurality of semiconductor nanocrystals capable of emitting red light upon excitation, wherein the device has a peak luminescent efficiency of at least about 1.5 lumens per watt. Also disclosed is a light-emitting device comprising a plurality of semiconductor nanocrystals capable of emitting red light upon excitation, wherein the device has a luminescent efficiency of at least about 1.5 lumens per watt when measured at a current density of 5 milliamps/square centimeter. Also disclosed is a light-emitting device comprising a plurality of semiconductor nanocrystals capable of emitting green light upon excitation, wherein the device has a peak external quantum efficiency of at least about 1.1 percent. Further disclosed is a light-emitting device comprising a plurality of semiconductor nanocrystals, wherein the device has a luminescent efficiency of at least about 3 lumens per watt when measured at a current density of 5 mA/cm2. Further disclosed is a light-emitting device comprising a plurality of semiconductor nanocrystals capable of emitting green light upon excitation, wherein the device has an external quantum efficiency of at least about 2% when measured at a current density of 5 mA/cm2. Other light-emitting devices and displays with improved performance are disclosed. Also disclosed are methods for preparing and for purifying semiconductor nanocrystals.

公开(公告)号：US20090278141A1

公开(公告)日：2009-11-12

申请号：US12313779

申请日：2008-11-24

申请人： Seth Coe-Sullivan ,  Dorai Ramprasad ,  Ioannis Kymissis ,  Vladimir Bulovic ,  Marshall Cox ,  Caroline J. Roush ,  Peter T. Kazlas ,  Jonathan S. Steckel

发明人： Seth Coe-Sullivan ,  Dorai Ramprasad ,  Ioannis Kymissis ,  Vladimir Bulovic ,  Marshall Cox ,  Caroline J. Roush ,  Peter T. Kazlas ,  Jonathan S. Steckel

IPC分类号： H01L33/00

CPC分类号： H01L33/06 ,  B82Y20/00 ,  B82Y30/00 ,  C09K11/02 ,  C09K11/565 ,  C09K11/883 ,  H01L27/156 ,  H01L33/0029 ,  H01L33/28 ,  H01L51/5012 ,  H01L51/502 ,  H05B33/145

摘要： Light-emitting devices and displays with improved performance are disclosed. A light-emitting device includes an emissive material disposed between a first electrode, and a second electrode. Various embodiments include a device having a peak external quantum efficiency of at least about 2.2%; a device that emits light having a CIE color coordinate of x greater than 0.63; a device having an external quantum efficiency of at least about 2.2 percent when measured at a current density of 5 mA/cm2. Also disclosed is a light-emitting device comprising a plurality of semiconductor nanocrystals capable of emitting red light upon excitation, wherein the device has a peak luminescent efficiency of at least about 1.5 lumens per watt. Also disclosed is a light-emitting device comprising a plurality of semiconductor nanocrystals capable of emitting red light upon excitation, wherein the device has a luminescent efficiency of at least about 1.5 lumens per watt when measured at a current density of 5 milliamps/square centimeter. Also disclosed is a light-emitting device comprising a plurality of semiconductor nanocrystals capable of emitting green light upon excitation, wherein the device has a peak external quantum efficiency of at least about 1.1 percent. Further disclosed is a light-emitting device comprising a plurality of semiconductor nanocrystals, wherein the device has a luminescent efficiency of at least about 3 lumens per watt when measured at a current density of 5 mA/cm2. Further disclosed is a light-emitting device comprising a plurality of semiconductor nanocrystals capable of emitting green light upon excitation, wherein the device has an external quantum efficiency of at least about 2% when measured at a current density of 5 mA/cm2. Other light-emitting devices and displays with improved performance are disclosed. Also disclosed are methods for preparing and for purifying semiconductor nanocrystals.

摘要翻译： 公开了具有改进性能的发光装置和显示器。 发光装置包括设置在第一电极和第二电极之间的发光材料。 各种实施方案包括具有至少约2.2％的峰值外部量子效率的器件; 发射具有x大于0.63的CIE色坐标的光的装置; 当以5mA / cm 2的电流密度测量时，具有至少约2.2％的外部量子效率的器件。 还公开了包括能够在激发时发射红光的多个半导体纳米晶体的发光器件，其中该器件具有至少约1.5流明/瓦特的峰值发光效率。 还公开了一种发光器件，其包括能够在激发时发射红光的多个半导体纳米晶体，其中当以5毫安/平方厘米的电流密度测量时，该器件具有至少约1.5流明/瓦特的发光效率。 还公开了一种发光器件，其包括在激发时能够发射绿光的多个半导体纳米晶体，其中该器件具有至少约1.1％的峰值外部量子效率。 还公开了包括多个半导体纳米晶体的发光器件，其中当以5mA / cm 2的电流密度测量时，该器件具有至少约3流明/瓦的发光效率。 进一步公开的是一种发光器件，其包括能够在激发时发出绿光的多个半导体纳米晶体，其中当以5mA / cm 2的电流密度测量时，该器件具有至少约2％的外部量子效率。 公开了其他具有改进性能的发光装置和显示器。 还公开了制备和纯化半导体纳米晶体的方法。