公开(公告)号：US20110291070A1

公开(公告)日：2011-12-01

申请号：US13112022

申请日：2011-05-20

申请人： Jong Hak WON ,  Sun Kyung Kim ,  Kyoung Woo Jo ,  Joong Seo Park

发明人： Jong Hak WON ,  Sun Kyung Kim ,  Kyoung Woo Jo ,  Joong Seo Park

IPC分类号： H01L33/06

CPC分类号： H01L33/0066 ,  H01L21/0237 ,  H01L21/02538 ,  H01L21/02639 ,  H01L21/02642 ,  H01L21/02647 ,  H01L33/0079 ,  H01L33/10 ,  H01L33/22 ,  H01L33/44 ,  H01L33/46 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/00014

摘要： Provided are a light emitting device, a light emitting device package, and a lighting system. The light emitting device includes a substrate, a light emitting structure comprising a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer, the light emitting structure being disposed on the substrate, a nonmetal pattern disposed between the substrate and the active layer, the nonmetal pattern being spaced from the substrate, and an air gap disposed on a side surface of the nonmetal pattern.

摘要翻译： 提供了一种发光器件，发光器件封装和照明系统。 发光器件包括衬底，包括第一导电类型半导体层，有源层和第二导电类型半导体层的发光结构，发光结构设置在衬底上，非金属图案设置在衬底和 所述有源层，所述非金属图案与所述基板间隔开，以及设置在所述非金属图案的侧表面上的气隙。

公开(公告)号：US20130048944A1

公开(公告)日：2013-02-28

申请号：US13585481

申请日：2012-08-14

申请人： Jong Hak WON ,  Jong Ho Na ,  Jae In Yoon ,  Hoon Ki Hong ,  Se Hwan Sim

发明人： Jong Hak WON ,  Jong Ho Na ,  Jae In Yoon ,  Hoon Ki Hong ,  Se Hwan Sim

IPC分类号： H01L33/04

CPC分类号： H01L33/06 ,  H01L2224/48091 ,  H01L2924/12032 ,  H01L2924/00014 ,  H01L2924/00

摘要： Disclosed are a light emitting device, a method of manufacturing the light emitting device, a light emitting device package and a lighting system. The light emitting device includes a first conductive semiconductor layer; an active layer including a quantum well and a quantum barrier and disposed on the first conductive semiconductor layer; and a second conductive semiconductor layer on the active layer. The active layer includes a first quantum well adjacent to the second conductive semiconductor layer, a second quantum well adjacent to the first quantum well, and a first quantum barrier between the first quantum well and the second quantum well. A recombination rate of electron-hole in the second quantum well is higher than the recombination rate of the electron-hole in the first quantum well, and the first quantum well has an energy level higher than the energy level of the second quantum well.

摘要翻译： 公开了发光器件，制造发光器件的方法，发光器件封装和照明系统。 发光器件包括第一导电半导体层; 包括量子阱和量子势垒的有源层，并设置在第一导电半导体层上; 以及在所述有源层上的第二导电半导体层。 有源层包括与第二导电半导体层相邻的第一量子阱，与第一量子阱相邻的第二量子阱以及第一量子阱和第二量子阱之间的第一量子势垒。 第二量子阱中电子空穴的复合速率高于第一量子阱中电子空穴的复合速率，第一量子阱的能级高于第二量子阱的能级。

公开(公告)号：US20120153256A1

公开(公告)日：2012-06-21

申请号：US13363554

申请日：2012-02-01

申请人： Jong Hak WON

发明人： Jong Hak WON

IPC分类号： H01L33/06

CPC分类号： H01L33/06 ,  H01L33/20 ,  H01L33/32 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/12032 ,  H01L2924/00014 ,  H01L2924/00

摘要： A light emitting device is provided. The light emitting device comprises an active layer comprising a plurality of well layers and a plurality of barrier layers. The bather layers comprise a first barrier layer having a first band gap which is the nearest to the second conductive type semiconductor layer, a second barrier layer adjacent to the first barrier, and a third barrier layer between the second bather layer and the first conductive type semiconductor layer. The well layers comprise a first well layer having a third band gap different from the first band gap between the first and second bather layers, and a second well layer between the second barrier layer and the third barrier layer, the second well layer having a second band gap. The first well layer has a thickness thinner than that of the second well layer.

摘要翻译： 提供了一种发光器件。 发光器件包括包括多个阱层和多个势垒层的有源层。 沐浴层包括第一阻挡层，其具有最接近第二导电类型半导体层的第一带隙，与第一阻挡层相邻的第二阻挡层，以及在第二沐浴层和第一导电类型之间的第三阻挡层 半导体层。 阱层包括具有不同于第一和第二沐浴层之间的第一带隙的第三带隙的第一阱层和在第二阻挡层和第三阻挡层之间的第二阱层，第二阱层具有第二阱层 带隙。 第一阱层的厚度比第二阱层薄。

公开(公告)号：US20120161102A1

公开(公告)日：2012-06-28

申请号：US13363523

申请日：2012-02-01

申请人： Jong Hak WON

发明人： Jong Hak WON

IPC分类号： H01L33/04

CPC分类号： H01L33/06 ,  H01L33/32 ,  H01L2224/48091 ,  H01L2924/00014

摘要： A light emitting device is provided. The light emitting device comprises an active layer comprising a plurality of well layers and barrier layers. The barrier layers comprise a first barrier layer which is the nearest to a second conductive type semiconductor layer and has a first band gap, a second barrier layer having a third band gap, and a third barrier layer having the first band gap between the second barrier layer and a first conductive type semiconductor layer. The well layers comprise a first well layer having a second band gap between the first and the second barrier layers, and a second well layer between the second barrier layer and the third barrier layer. The second barrier layer is disposed between the first and the second well layers, and the third band gap is narrower than the first band gap and wider than the second band gap.

摘要翻译： 提供了一种发光器件。 发光器件包括包含多个阱层和阻挡层的有源层。 阻挡层包括最靠近第二导电类型半导体层并具有第一带隙的第一阻挡层，具有第三带隙的第二势垒层和在第二阻挡层之间具有第一带隙的第三阻挡层 层和第一导电型半导体层。 阱层包括在第一和第二阻挡层之间具有第二带隙的第一阱层和在第二势垒层和第三势垒层之间的第二阱层。 第二阻挡层设置在第一阱层和第二阱层之间，第三带隙比第一带隙窄，并且宽于第二带隙。

公开(公告)号：US20110133156A1

公开(公告)日：2011-06-09

申请号：US12958592

申请日：2010-12-02

申请人： Jong Hak WON ,  Jeong Sik Lee

发明人： Jong Hak WON ,  Jeong Sik Lee

IPC分类号： H01L33/04

CPC分类号： H01L33/06 ,  H01L33/025 ,  H01L33/04 ,  H01L33/325 ,  H01L2224/48091 ,  H01L2924/00014

摘要： Provided are a light emitting device and a light emitting device package including the same. The light emitting device comprises a first conductive type semiconductor layer, an active layer comprising a plurality of quantum well layers and a plurality of barrier layers, which are alternately laminated on the first conductive type semiconductor layer, and a second conductive type semiconductor layer on the active layer. The plurality of barrier layers comprise a plurality of first barrier layers comprising a conductive type dopant, and the conductive type dopant doped into the plurality of first barrier layers have different doping concentrations for each layer.

摘要翻译： 提供一种发光器件和包括该发光器件的发光器件封装。 发光器件包括第一导电类型半导体层，包括交替层压在第一导电类型半导体层上的多个量子阱层和多个势垒层的有源层和第二导电类型半导体层 活动层 多个阻挡层包括多个包含导电型掺杂剂的第一势垒层，并且掺杂到多个第一势垒层中的导电型掺杂剂对于每个层具有不同的掺杂浓度。