Light emitting device package and fabrication method thereof
    1.
    发明授权
    Light emitting device package and fabrication method thereof 有权
    发光器件封装及其制造方法

    公开(公告)号:US08829548B2

    公开(公告)日:2014-09-09

    申请号:US13554026

    申请日:2012-07-20

    IPC分类号: H01L33/00

    摘要: A light emitting device package includes: an undoped semiconductor substrate having first and second surfaces opposed to each other; first and second conductive vias penetrating the undoped semiconductor substrate; a light emitting device mounted on one region of the first surface; a bi-directional Zener diode formed by doping an impurity on the second surface of the undoped semiconductor substrate and having a Zener breakdown voltage in both directions; and first and second external electrodes formed on the second surface of the undoped semiconductor substrate such that they connect the first and second conductive vias to both ends of the bi-directional Zener diode region, respectively.

    摘要翻译: 发光器件封装包括:具有彼此相对的第一和第二表面的未掺杂的半导体衬底; 穿过未掺杂的半导体衬底的第一和第二导电通孔; 安装在所述第一表面的一个区域上的发光器件; 通过在未掺杂的半导体衬底的第二表面上掺杂杂质并在两个方向上具有齐纳击穿电压形成的双向齐纳二极管; 以及形成在未掺杂的半导体衬底的第二表面上的第一和第二外部电极,使得它们分别将第一和第二导电通孔连接到双向齐纳二极管区域的两端。

    LIGHT EMITTING DEVICE PACKAGE AND FABRICATION METHOD THEREOF
    2.
    发明申请
    LIGHT EMITTING DEVICE PACKAGE AND FABRICATION METHOD THEREOF 有权
    发光器件封装及其制造方法

    公开(公告)号:US20130020598A1

    公开(公告)日:2013-01-24

    申请号:US13554026

    申请日:2012-07-20

    IPC分类号: H01L33/50 H01L33/62

    摘要: A light emitting device package includes: an undoped semiconductor substrate having first and second surfaces opposed to each other; first and second conductive vias penetrating the undoped semiconductor substrate; a light emitting device mounted on one region of the first surface; a bi-directional Zener diode formed by doping an impurity on the second surface of the undoped semiconductor substrate and having a Zener breakdown voltage in both directions; and first and second external electrodes formed on the second surface of the undoped semiconductor substrate such that they connect the first and second conductive vias to both ends of the bi-directional Zener diode region, respectively.

    摘要翻译: 发光器件封装包括:具有彼此相对的第一和第二表面的未掺杂的半导体衬底; 穿过未掺杂的半导体衬底的第一和第二导电通孔; 安装在所述第一表面的一个区域上的发光器件; 通过在未掺杂的半导体衬底的第二表面上掺杂杂质并在两个方向上具有齐纳击穿电压形成的双向齐纳二极管; 以及形成在未掺杂的半导体衬底的第二表面上的第一和第二外部电极,使得它们分别将第一和第二导电通孔连接到双向齐纳二极管区域的两端。

    Semiconductor light emitting device and method for fabricating the same
    3.
    发明授权
    Semiconductor light emitting device and method for fabricating the same 有权
    半导体发光器件及其制造方法

    公开(公告)号:US08993993B2

    公开(公告)日:2015-03-31

    申请号:US13104487

    申请日:2011-05-10

    摘要: Provided are a semiconductor light emitting device and a method for fabricating the same. The semiconductor light emitting device includes a light emitting structure and a pattern. The light emitting structure includes a first-conductivity-type semiconductor layer, an active layer, and a second-conductivity-type semiconductor layer. The pattern is formed on at least one light emitting surface among the surfaces of the light emitting structure. The pattern has a plurality of convex or concave parts that are similar in shape. The light emitting surface with the pattern formed thereon has a plurality of virtual reference regions that are equal in size and are arranged in a regular manner. The convex or concave part is disposed in the reference regions such that a part of the edge thereof is in contact with the outline of one of the plurality of virtual reference regions.

    摘要翻译: 提供一种半导体发光器件及其制造方法。 半导体发光器件包括发光结构和图案。 发光结构包括第一导电型半导体层,有源层和第二导电型半导体层。 该图案形成在发光结构的表面中的至少一个发光表面上。 该图案具有形状相似的多个凸部或凹部。 具有形成在其上的图案的发光面具有多个尺寸相等并以规则排列的虚拟参考区域。 凸部或凹部设置在参考区域中,使得其边缘的一部分与多个虚拟参考区域之一的轮廓接触。