ICE TRAY ASSEMBLY AND REFRIGERATOR HAVING THE SAME
    1.
    发明申请
    ICE TRAY ASSEMBLY AND REFRIGERATOR HAVING THE SAME 审中-公开
    冰箱组件和具有相同功能的冰箱

    公开(公告)号:US20080006048A1

    公开(公告)日:2008-01-10

    申请号:US11770526

    申请日:2007-06-28

    IPC分类号: F25C1/22

    摘要: An ice tray assembly and a refrigerator having the same are disclosed. The ice tray assembly includes an outer case on which a water container is mounted, and an inner case detachably mounted in the outer case to include ice trays which are supplied with water from the water container. The ice tray assembly includes the inner case which is detachable therefrom, thereby facilitating washing. Further, the ice trays can be supplied with water at once without water leakage and ice cubes made in the ice trays can be separated from the ice trays at once.

    摘要翻译: 公开了一种冰盘组件及其制造商。 冰盘组件包括安装有水容器的外壳和可拆卸地安装在外壳中的内壳,以包括从水容器供应水的冰盘。 冰盘组件包括可拆卸的内壳,从而便于洗涤。 此外,冰盘可以一次供水,没有漏水,冰盘中制成的冰块可以与冰盘一次分离。

    Transparent multilayer sheet having electrostatic dissipative properties
    4.
    发明授权
    Transparent multilayer sheet having electrostatic dissipative properties 有权
    具有静电耗散性的透明多层片材

    公开(公告)号:US08808843B2

    公开(公告)日:2014-08-19

    申请号:US12810323

    申请日:2008-12-22

    IPC分类号: B32B7/02

    摘要: Disclosed is a transparent multilayer sheet that is excellent in antistatic properties, as well as transparency. The transparent multilayer sheet includes a surface layer comprising a conductive thermoplastic polyurethane or polyurea resin containing ethylene oxide; and a back layer attached to the surface layer and comprising a transparent non-conductive polymer resin. Preferably, the polyurethane or polyurea resin is a polymerization product of (a) a polyether-based polymer containing ethylene oxide and reacting with an isocyanate group; (b) an aromatic or aliphatic diisocyanate compound; and (c) a chain extender C2 to C10 containing a primary hydroxyl group or an amine group, and the transparent non-conductive polymer resin is selected from the group consisting of polyethylene terephthalate, glycol modified polyethylene tereph-thalate, glycol modified polycyclohexaneterephthalate, polymethylmethacrylate, polycarbonate, transparent acrylonitrile-butadiene-styrene (ABS), and mixtures thereof.

    摘要翻译: 公开了抗静电性能以及透明性优异的透明多层片材。 透明多层片材包括含有导电性热塑性聚氨酯或含有环氧乙烷的聚脲树脂的表面层; 以及附着到表面层并包含透明非导电聚合物树脂的背层。 优选地,聚氨酯或聚脲树脂是(a)含有环氧乙烷并与异氰酸酯基反应的聚醚类聚合物的聚合产物; (b)芳族或脂族二异氰酸酯化合物; 和(c)含有伯羟基或胺基的扩链剂C2至C10,透明非导电聚合物树脂选自聚对苯二甲酸乙二醇酯,二醇改性聚对苯二甲酸乙二醇酯,二醇改性聚环己烷对苯二甲酸酯,聚甲基丙烯酸甲酯 ,聚碳酸酯,透明丙烯腈 - 丁二烯 - 苯乙烯(ABS)及其混合物。

    Data transmitting device, data receiving device, data transmitting system, and data transmitting method
    5.
    发明授权
    Data transmitting device, data receiving device, data transmitting system, and data transmitting method 有权
    数据发送装置,数据接收装置,数据发送系统,数据发送方式

    公开(公告)号:US08199849B2

    公开(公告)日:2012-06-12

    申请号:US12487593

    申请日:2009-06-18

    IPC分类号: H04L25/34

    CPC分类号: H04L25/4923

    摘要: Provided are a data transmitting device transmitting data through a delay insensitive data transmitting method and a data transmitting method. The data transmitting device and the data transmitting method use the delay insensitive data transmitting method supporting a 2-phase hand shake protocol. During data transmission, data are encoded into three logic state having no space state through a ternary encoding method. According to the data transmitting device and the data transmitting method, data are stably transmitted to a receiver regardless of the length of a wire, and provides more excellent performance in an aspect of a data transmission rate, compared to a related art 4-phase delay data transmitting method.

    摘要翻译: 提供一种通过延迟不敏感数据发送方法和数据发送方法发送数据的数据发送装置。 数据发送装置和数据发送方法使用支持2相手抖动协议的延迟不敏感数据发送方式。 在数据传输期间,通过三进制编码方式将数据编码为没有空间状态的三个逻辑状态。 根据数据发送装置和数据发送方式,与现有技术的4相延迟相比,无论线长度如何,都能够将数据稳定地发送到接收机,并且在数据传输速率方面提供更优异的性能 数据传输方式。

    Transparent Multilayer Sheet Having Electrostatic Dissipative Properties
    6.
    发明申请
    Transparent Multilayer Sheet Having Electrostatic Dissipative Properties 有权
    具有静电消耗性能的透明多层薄板

    公开(公告)号:US20120021198A1

    公开(公告)日:2012-01-26

    申请号:US12810323

    申请日:2008-12-22

    IPC分类号: B32B27/08 B32B27/18 B32B27/40

    摘要: Disclosed is a transparent multilayer sheet that is excellent in antistatic properties, as well as transparency. The transparent multilayer sheet includes a surface layer comprising a conductive thermoplastic polyurethane or polyurea resin containing ethylene oxide; and a back layer attached to the surface layer and comprising a transparent non-conductive polymer resin. Preferably, the polyurethane or polyurea resin is a polymerization product of (a) a polyether-based polymer containing ethylene oxide and reacting with an isocyanate group; (b) an aromatic or aliphatic diisocyanate compound; and (c) a chain extender C2 to C10 containing a primary hydroxyl group or an amine group, and the transparent non-conductive polymer resin is selected from the group consisting of polyethylene terephthalate, glycol modified polyethylene terephthalate, glycol modified polycyclohexaneterephthalate, polymethylmethacrylate, polycarbonate, transparent acrylonitrile-butadiene-styrene (ABS), and mixtures thereof.

    摘要翻译: 公开了抗静电性能以及透明性优异的透明多层片材。 透明多层片材包括含有导电性热塑性聚氨酯或含有环氧乙烷的聚脲树脂的表面层; 以及附着到表面层并包含透明非导电聚合物树脂的背层。 优选地,聚氨酯或聚脲树脂是(a)含有环氧乙烷并与异氰酸酯基反应的聚醚类聚合物的聚合产物; (b)芳族或脂族二异氰酸酯化合物; 和(c)含有伯羟基或胺基的扩链剂C2至C10,透明非导电聚合物树脂选自聚对苯二甲酸乙二醇酯,二醇改性聚对苯二甲酸乙二醇酯,二醇改性聚环己烷对苯二甲酸酯,聚甲基丙烯酸甲酯,聚碳酸酯 ,透明丙烯腈 - 丁二烯 - 苯乙烯(ABS)及其混合物。

    Nitride based semiconductor light emitting device
    9.
    发明授权
    Nitride based semiconductor light emitting device 有权
    基于氮化物的半导体发光器件

    公开(公告)号:US08759815B2

    公开(公告)日:2014-06-24

    申请号:US13818572

    申请日:2011-09-01

    IPC分类号: H01L33/04

    摘要: The disclosure relates to a nitride based semiconductor light emitting device with improved luminescence efficiency by increasing a recombination rate of electrons and holes contributing to luminescence, which results from matching the spatial distribution of electron and hole wave functions. The nitride based semiconductor light emitting device according to the present invention includes an n-type nitride layer, an active layer formed on the n-type nitride layer, and a p-type nitride layer formed on the active layer. At this stage, a strain control layer, and the at least one layer has a larger energy bandgap than a quantum well layer in the active layer. The strain control layer is disposed in an area where the quantum well layer of the active layer is formed. Moreover, an energy bandgap of the strain control layer is less than that of quantum barrier of the active layer.

    摘要翻译: 本发明涉及通过增加电子和有助于发光的空穴的复合速率而提高发光效率的氮化物基半导体发光器件,这是通过匹配电子和空穴波函数的空间分布而得到的。 根据本发明的氮化物基半导体发光器件包括n型氮化物层,形成在n型氮化物层上的有源层和形成在有源层上的p型氮化物层。 在这个阶段,应变控制层和至少一个层在有源层中具有比量子阱层更大的能带隙。 应变控制层设置在形成有源层的量子阱层的区域中。 此外,应变控制层的能带隙小于有源层的量子势垒的能带隙。

    NITRIDE BASED SEMICONDUCTOR LIGHT EMITTING DEVICE
    10.
    发明申请
    NITRIDE BASED SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
    基于氮化物的半导体发光器件

    公开(公告)号:US20130299775A1

    公开(公告)日:2013-11-14

    申请号:US13818572

    申请日:2011-09-01

    IPC分类号: H01L33/12 H01L33/04

    摘要: The disclosure relates to a nitride based semiconductor light emitting device with improved luminescence efficiency by increasing a recombination rate of electrons and holes contributing to luminescence, which results from matching the spatial distribution of electron and hole wave functions. The nitride based semiconductor light emitting device according to the present invention includes an n-type nitride layer, an active layer formed on the n-type nitride layer, and a p-type nitride layer formed on the active layer. At this stage, a strain control layer, and the at least one layer has a larger energy bandgap than a quantum well layer in the active layer. The strain control layer is disposed in an area where the quantum well layer of the active layer is formed. Moreover, an energy bandgap of the strain control layer is less than that of quantum barrier of the active layer.

    摘要翻译: 本发明涉及通过增加电子和有助于发光的空穴的复合速率而提高发光效率的氮化物基半导体发光器件,这是通过匹配电子和空穴波函数的空间分布而得到的。 根据本发明的氮化物基半导体发光器件包括n型氮化物层,形成在n型氮化物层上的有源层和形成在有源层上的p型氮化物层。 在这个阶段,应变控制层和至少一个层在有源层中具有比量子阱层更大的能带隙。 应变控制层设置在形成有源层的量子阱层的区域中。 此外,应变控制层的能带隙小于有源层的量子势垒的能带隙。