公开(公告)号：US20080284326A1

公开(公告)日：2008-11-20

申请号：US12152601

申请日：2008-05-14

申请人： Jong-Hyun Choi ,  Kyung-Jin Yoo ,  Hee-Chul Jeon

发明人： Jong-Hyun Choi ,  Kyung-Jin Yoo ,  Hee-Chul Jeon

IPC分类号： H01J1/62 ,  H01L51/52 ,  H01L51/56

CPC分类号： H01L27/3248 ,  H01L51/5212 ,  H01L51/5218 ,  H01L2251/5315

摘要： Provided is an organic light emitting diode (OLED) display device, including: a substrate; a semiconductor layer on the substrate; a gate insulating layer on the substrate with the semiconductor layer; a gate electrode on a region of the gate insulating layer corresponding to the semiconductor layer and insulated from the semiconductor layer; source and drain electrodes connected to the semiconductor layer; metal layers on the source and drain electrodes, spaced a distance apart from each other, and including nickel; a passivation layer over the gate insulating layer; a first electrode on the passivation layer, and electrically connected to the metal layers; an organic layer on the first electrode; and a second electrode on the organic layer.

摘要翻译： 提供了一种有机发光二极管（OLED）显示装置，包括：基板; 衬底上的半导体层; 在具有半导体层的衬底上的栅极绝缘层; 所述栅电极与所述半导体层对应并与所述半导体层绝缘的所述栅极绝缘层的区域上; 源极和漏极连接到半导体层; 源极和漏极上的金属层，彼此隔开一段距离，并包括镍; 栅绝缘层上的钝化层; 钝化层上的第一电极，并电连接到金属层; 第一电极上的有机层; 和有机层上的第二电极。

公开(公告)号：US07994706B2

公开(公告)日：2011-08-09

申请号：US12152601

申请日：2008-05-14

申请人： Jong-Hyun Choi ,  Kyung-Jin Yoo ,  Hee-Chul Jeon

发明人： Jong-Hyun Choi ,  Kyung-Jin Yoo ,  Hee-Chul Jeon

IPC分类号： H01L51/00

CPC分类号： H01L27/3248 ,  H01L51/5212 ,  H01L51/5218 ,  H01L2251/5315

摘要： Provided is an organic light emitting diode (OLED) display device, including: a substrate; a semiconductor layer on the substrate; a gate insulating layer on the substrate with the semiconductor layer; a gate electrode on a region of the gate insulating layer corresponding to the semiconductor layer and insulated from the semiconductor layer; source and drain electrodes connected to the semiconductor layer; metal layers on the source and drain electrodes, spaced a distance apart from each other, and including nickel; a passivation layer over the gate insulating layer; a first electrode on the passivation layer, and electrically connected to the metal layers; an organic layer on the first electrode; and a second electrode on the organic layer.

摘要翻译： 提供了一种有机发光二极管（OLED）显示装置，包括：基板; 衬底上的半导体层; 在具有半导体层的衬底上的栅极绝缘层; 所述栅电极与所述半导体层对应并与所述半导体层绝缘的所述栅极绝缘层的区域上; 源极和漏极连接到半导体层; 源极和漏极上的金属层，彼此隔开一段距离，并包括镍; 栅绝缘层上的钝化层; 钝化层上的第一电极，并电连接到金属层; 第一电极上的有机层; 和有机层上的第二电极。

公开(公告)号：US20080246029A1

公开(公告)日：2008-10-09

申请号：US12076048

申请日：2008-03-13

申请人： Chul-Kyu Kang ,  Jong-Hyun Choi ,  Woo-Sik Jun ,  Hee-Chul Jeon

发明人： Chul-Kyu Kang ,  Jong-Hyun Choi ,  Woo-Sik Jun ,  Hee-Chul Jeon

IPC分类号： H01L51/52 ,  H01L29/786 ,  H01L51/56

CPC分类号： H01L29/41733 ,  H01L27/12 ,  H01L27/124 ,  H01L27/3244

摘要： A thin film transistor, e.g., for use in an organic light emitting display, may include: a gate insulating layer disposed on a gate electrode located on a substrate; a semiconductor layer, disposed on the gate insulating layer; and a planarization layer disposed on the gate insulating layer, the source and drain electrodes, and the channel area, and having openings exposing parts of the first source and drain areas and the source and drain electrodes, respectively. The semiconductor layer may include: a channel area corresponding to the gate electrode; first source and drain areas doped with an impurity outside the channel area; second source and drain areas, including a metal, outside the first source and drain areas; and source and drain electrodes disposed on the second source and drain areas and exposing the first source and drain areas. A pixel electrode may be disposed in one of the openings.

摘要翻译： 例如，用于有机发光显示器的薄膜晶体管可以包括：栅极绝缘层，设置在位于衬底上的栅电极上; 半导体层，设置在所述栅极绝缘层上; 以及设置在所述栅极绝缘层，所述源极和漏极以及所述沟道区上的平坦化层，并且具有分别暴露所述第一源极和漏极区域以及所述源极和漏极的部分的开口。 半导体层可以包括：对应于栅电极的沟道区; 在沟道区域外掺杂杂质的第一源区和漏区; 第二源和漏区，包括金属，在第一源和漏区外; 以及设置在第二源极和漏极区域上并且暴露第一源极和漏极区域的源极和漏极电极。 像素电极可以设置在其中一个开口中。

公开(公告)号：US20080277666A1

公开(公告)日：2008-11-13

申请号：US12149580

申请日：2008-05-05

申请人： Hee-Chul Jeon ,  Chul-Kyu Kang ,  Woo-Sik Jun ,  Jong-Hyun Choi

发明人： Hee-Chul Jeon ,  Chul-Kyu Kang ,  Woo-Sik Jun ,  Jong-Hyun Choi

IPC分类号： H01L29/04 ,  H01L21/336

CPC分类号： H01L27/3244 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/1288 ,  H01L27/3248 ,  H01L27/3262 ,  H01L29/41733

摘要： A thin film transistor (TFT) may include a substrate, a gate electrode on the substrate, a gate insulating layer on the gate electrode, and a semiconductor layer on the gate insulating layer. The semiconductor layer may include a top surface, a channel area aligned in a vertical direction with the gate electrode, a plurality of doped areas proximate to the channel area, and a plurality of non-doped areas. Source and drain electrodes may be on the top surface of the semiconductor layer aligned above respective ones of the plurality of non-doped areas of the semiconductor layer. A planarization layer may be on the gate insulating layer, the source and drain electrodes and the semiconductor layer channel area, and may include a plurality of openings respectively exposing the plurality of doped areas of the semiconductor layer and a portion of the source electrode and the drain electrode.

摘要翻译： 薄膜晶体管（TFT）可以包括衬底，衬底上的栅极电极，栅电极上的栅极绝缘层和栅极绝缘层上的半导体层。 半导体层可以包括顶表面，在垂直方向上与栅极电极对准的沟道区域，靠近沟道区域的多个掺杂区域以及多个非掺杂区域。 源电极和漏电极可以在半导体层的顶表面上对准半导体层的多个非掺杂区域中的相应一个上方。 平坦化层可以在栅极绝缘层，源极和漏极以及半导体层沟道区上，并且可以包括分别暴露半导体层的多个掺杂区域和源电极的一部分的多个开口和 漏电极。

公开(公告)号：US08299470B2

公开(公告)日：2012-10-30

申请号：US11898506

申请日：2007-09-12

申请人： Chul-Kyu Kang ,  Jong-Hyun Choi ,  Woo-Sik Jun ,  Hee-Chul Jeon

发明人： Chul-Kyu Kang ,  Jong-Hyun Choi ,  Woo-Sik Jun ,  Hee-Chul Jeon

IPC分类号： H01L33/00 ,  H01L21/00

CPC分类号： H01L27/1288 ,  H01L27/124

摘要： Provided is a flat display device, and more particularly, an active matrix (AM) flat display device having a thin film transistor (TFT). The flat display device includes a substrate, a plurality of TFTs (thin film transistors) provided on the substrate, each TFT comprising an active layer, a source electrode and a drain electrode that contact the active layer, and an ohmic contact layer interposed between the active layer and the source and drain electrodes, and a light emitting device electrically connected to the TFT, wherein the ohmic contact layer and a layer including the source and drain electrodes are formed to have the same pattern.

摘要翻译： 提供了一种平面显示装置，更具体地，涉及具有薄膜晶体管（TFT）的有源矩阵（AM）平面显示装置。 平面显示装置包括基板，设置在基板上的多个TFT（薄膜晶体管），每个TFT包括与有源层接触的有源层，源电极和漏电极以及介于其间的欧姆接触层 有源层和源极和漏极以及电连接到TFT的发光器件，其中欧姆接触层和包括源极和漏极的层被形成为具有相同的图案。

公开(公告)号：US07968870B2

公开(公告)日：2011-06-28

申请号：US12076048

申请日：2008-03-13

申请人： Chul-Kyu Kang ,  Jong-Hyun Choi ,  Woo-Sik Jun ,  Hee-Chul Jeon

发明人： Chul-Kyu Kang ,  Jong-Hyun Choi ,  Woo-Sik Jun ,  Hee-Chul Jeon

IPC分类号： H01L51/52

CPC分类号： H01L29/41733 ,  H01L27/12 ,  H01L27/124 ,  H01L27/3244

摘要： A thin film transistor, e.g., for use in an organic light emitting display, may include: a gate insulating layer disposed on a gate electrode located on a substrate; a semiconductor layer, disposed on the gate insulating layer; and a planarization layer disposed on the gate insulating layer, the source and drain electrodes, and the channel area, and having openings exposing parts of the first source and drain areas and the source and drain electrodes, respectively. The semiconductor layer may include: a channel area corresponding to the gate electrode; first source and drain areas doped with an impurity outside the channel area; second source and drain areas, including a metal, outside the first source and drain areas; and source and drain electrodes disposed on the second source and drain areas and exposing the first source and drain areas. A pixel electrode may be disposed in one of the openings.

摘要翻译： 例如，用于有机发光显示器的薄膜晶体管可以包括：栅极绝缘层，设置在位于衬底上的栅电极上; 半导体层，设置在所述栅极绝缘层上; 以及设置在所述栅极绝缘层，所述源极和漏极以及所述沟道区上的平坦化层，并且具有分别暴露所述第一源极和漏极区域以及所述源极和漏极的部分的开口。 半导体层可以包括：对应于栅电极的沟道区; 在沟道区域外掺杂杂质的第一源区和漏区; 第二源和漏区，包括金属，在第一源和漏区外; 以及设置在第二源极和漏极区域上并且暴露第一源极和漏极区域的源极和漏极电极。 像素电极可以设置在其中一个开口中。

公开(公告)号：US07928439B2

公开(公告)日：2011-04-19

申请号：US12149580

申请日：2008-05-05

申请人： Hee-Chul Jeon ,  Chul-Kyu Kang ,  Woo-Sik Jun ,  Jong-Hyun Choi

发明人： Hee-Chul Jeon ,  Chul-Kyu Kang ,  Woo-Sik Jun ,  Jong-Hyun Choi

IPC分类号： H01L29/04

CPC分类号： H01L27/3244 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/1288 ,  H01L27/3248 ,  H01L27/3262 ,  H01L29/41733

摘要： A thin film transistor (TFT) may include a substrate, a gate electrode on the substrate, a gate insulating layer on the gate electrode, and a semiconductor layer on the gate insulating layer. The semiconductor layer may include a top surface, a channel area aligned in a vertical direction with the gate electrode, a plurality of doped areas proximate to the channel area, and a plurality of non-doped areas. Source and drain electrodes may be on the top surface of the semiconductor layer aligned above respective ones of the plurality of non-doped areas of the semiconductor layer. A planarization layer may be on the gate insulating layer, the source and drain electrodes and the semiconductor layer channel area, and may include a plurality of openings respectively exposing the plurality of doped areas of the semiconductor layer and a portion of the source electrode and the drain electrode.

摘要翻译： 薄膜晶体管（TFT）可以包括衬底，衬底上的栅极电极，栅电极上的栅极绝缘层和栅极绝缘层上的半导体层。 半导体层可以包括顶表面，在垂直方向上与栅极电极对准的沟道区域，靠近沟道区域的多个掺杂区域以及多个非掺杂区域。 源电极和漏电极可以在半导体层的顶表面上对准半导体层的多个非掺杂区域中的相应一个上方。 平坦化层可以在栅极绝缘层，源极和漏极以及半导体层沟道区上，并且可以包括分别暴露半导体层的多个掺杂区域和源电极的一部分的多个开口 漏电极。

公开(公告)号：US20080246037A1

公开(公告)日：2008-10-09

申请号：US11898506

申请日：2007-09-12

申请人： Chul-Kyu Kang ,  Jong-Hyun Choi ,  Woo-Sik Jun ,  Hee-Chul Jeon

发明人： Chul-Kyu Kang ,  Jong-Hyun Choi ,  Woo-Sik Jun ,  Hee-Chul Jeon

IPC分类号： H01L33/00 ,  H01L21/00

CPC分类号： H01L27/1288 ,  H01L27/124

摘要： Provided is a flat display device, and more particularly, an active matrix (AM) flat display device having a thin film transistor (TFT). The flat display device includes a substrate, a plurality of TFTs (thin film transistors) provided on the substrate, each TFT comprising an active layer, a source electrode and a drain electrode that contact the active layer, and an ohmic contact layer interposed between the active layer and the source and drain electrodes, and a light emitting device electrically connected to the TFT, wherein the ohmic contact layer and a layer including the source and drain electrodes are formed to have the same pattern.

摘要翻译： 提供了一种平面显示装置，更具体地，涉及具有薄膜晶体管（TFT）的有源矩阵（AM）平面显示装置。 平面显示装置包括基板，设置在基板上的多个TFT（薄膜晶体管），每个TFT包括与有源层接触的有源层，源电极和漏电极以及介于其间的欧姆接触层 有源层和源极和漏极以及电连接到TFT的发光器件，其中欧姆接触层和包括源极和漏极的层被形成为具有相同的图案。

公开(公告)号：US09019255B2

公开(公告)日：2015-04-28

申请号：US12752760

申请日：2010-04-01

申请人： Sung-Joo Hwang ,  Hee-Chul Jeon ,  Jung-I Yun ,  Sae-Hee Lim

发明人： Sung-Joo Hwang ,  Hee-Chul Jeon ,  Jung-I Yun ,  Sae-Hee Lim

IPC分类号： G06F3/038 ,  G09G5/00 ,  G02B5/20 ,  H01L51/52 ,  G02B5/30

CPC分类号： G02B5/205 ,  G02B5/3033 ,  H01L51/5262

摘要： An organic light emitting display apparatus includes a polarizer film arranged on a substrate or an encapsulation substrate that faces an image realized by a display unit, wherein the polarizer film includes a plurality of regions having different light transmittances. By using the polarizer film, a luminance difference due to a voltage drop may be compensated for so that a uniform luminance may be obtained when the image is realized.

摘要翻译： 一种有机发光显示装置，包括配置在基板或封装基板上的偏振片，该偏振片面对由显示单元实现的图像，其中所述偏振片包括具有不同光透射率的多个区域。 通过使用偏振片，可以补偿由于电压降引起的亮度差，使得在实现图像时可以获得均匀的亮度。

公开(公告)号：US08754404B2

公开(公告)日：2014-06-17

申请号：US12651011

申请日：2009-12-31

申请人： Woo-Suk Jung ,  Hee-Seong Jeong ,  Soon-Ryong Park ,  Eun-Ah Kim ,  Hee-Chul Jeon ,  Chul-Woo Jeong ,  Joo-Hwa Lee ,  Noh-Min Kwak

发明人： Woo-Suk Jung ,  Hee-Seong Jeong ,  Soon-Ryong Park ,  Eun-Ah Kim ,  Hee-Chul Jeon ,  Chul-Woo Jeong ,  Joo-Hwa Lee ,  Noh-Min Kwak

IPC分类号： H01L29/08

CPC分类号： H01L27/3246 ,  H01L27/322 ,  H01L51/5231 ,  H01L51/5281

摘要： An organic light emitting diode display including: a substrate; pixel electrodes formed on the substrate; a pixel defining layer having openings exposing the plurality of pixel electrodes, formed on the substrate; spacers formed on the pixel defining layer; organic emission layers formed on the pixel electrodes; a common electrode formed on the organic emission layers; and color filters formed on the common electrode, in the openings of the pixel defining layer.

摘要翻译： 一种有机发光二极管显示器，包括：基板; 形成在基板上的像素电极; 形成在所述基板上的具有露出所述多个像素电极的开口的像素限定层; 在像素限定层上形成的间隔物; 形成在像素电极上的有机发光层; 形成在有机发射层上的公共电极; 以及形成在公共电极上的像素限定层的开口中的滤色器。